公开(公告)号：US20060175960A1

公开(公告)日：2006-08-10

申请号：US11345241

申请日：2006-02-02

Applicant: Tae-Yong Noh ,  Euk-Che Hwang ,  Jong-Jin Park ,  Young-Hun Byun ,  Jhun-Mo Son ,  Sung-Hun Lee ,  Sang-Hoon Park

Inventor： Tae-Yong Noh ,  Euk-Che Hwang ,  Jong-Jin Park ,  Young-Hun Byun ,  Jhun-Mo Son ,  Sung-Hun Lee ,  Sang-Hoon Park

IPC: H01L51/52 ,  H01L51/56 ,  H05B33/10 ,  H05B33/12

CPC classification number: H01L51/5203 ,  H01L27/3209 ,  H01L51/5209 ,  H01L51/5225 ,  H01L2251/5323

Abstract: An organic light emitting device (OLED) and a white light emitting device are provided. The OLED includes a substrate, a mesh shaped anode formed on the substrate and designed to pass light, a cathode facing the anode, and an organic light emitting layer located between the anode and the cathode.

公开(公告)号：US20050246727A1

公开(公告)日：2005-11-03

申请号：US11083339

申请日：2005-03-18

Applicant: Young-woo Huh ,  Pil-je Cho ,  Young-sun Jung ,  Kyu-hyeong Lee ,  Sung-hun Lee ,  Chung-ung Kim

Inventor： Young-woo Huh ,  Pil-je Cho ,  Young-sun Jung ,  Kyu-hyeong Lee ,  Sung-hun Lee ,  Chung-ung Kim

IPC: G11B17/028 ,  G11B17/04 ,  G11B33/02 ,  G11B33/08

CPC classification number: G11B17/05 ,  G11B33/08

Abstract: A damper and a disk drive using the clamper. The damper includes a body, a movable member inserted into a guide portion protruding from a center of the body so that the movable member is moved up and down along the guide portion, and having a plurality of opposed bosses, an elastic member, inserted into the guide portion under the movable member, for elastically biasing the movable member upward, and a stationary member, installed on an upper portion of the guide portion, for preventing the movable member from being released from the guide portion.

Abstract translation: 阻尼器和使用夹持器的磁盘驱动器。 阻尼器包括主体，插入到从主体的中心突出的引导部分中的可动构件，使得可移动构件沿着引导部分上下移动，并且具有多个相对的凸起，弹性构件插入到 可移动部件下方的引导部分，用于向上弹性地偏压可移动部件;以及固定部件，安装在引导部分的上部，用于防止可动部件从引导部分脱离。

公开(公告)号：US10032791B2

公开(公告)日：2018-07-24

申请号：US15403779

申请日：2017-01-11

Applicant: Chang-Sup Lee ,  Sung-Hun Lee ,  Joonhee Lee ,  Seong Soon Cho

Inventor： Chang-Sup Lee ,  Sung-Hun Lee ,  Joonhee Lee ,  Seong Soon Cho

IPC: H01L23/522 ,  H01L23/528 ,  H01L27/11582 ,  H01L23/535 ,  H01L27/11556 ,  H01L29/423

CPC classification number: H01L27/11582 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/535 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575 ,  H01L29/42328 ,  H01L29/42344

Abstract: A three-dimensional semiconductor memory device includes a substrate including a cell array region and a connection region and an electrode structure including first and second electrodes alternatingly and vertically stacked on the substrate and having a stair-step structure on the connection region. Each of the first and second electrodes may include electrode portions provided on the cell array region to extend in a first direction and to be spaced apart from each other in a second direction perpendicular to the first direction, an electrode connecting portion provided on the connection region to extend in the second direction and to horizontally connect the electrode portions to each other, and protrusions provided on the connection region to extend from the electrode connecting portion in the first direction and to be spaced apart from each other in the second direction.

公开(公告)号：US09728587B2

公开(公告)日：2017-08-08

申请号：US12958324

申请日：2010-12-01

Applicant: Sung-Hun Lee ,  Jung-Bae Song ,  Gwan-Hyoung Lee

Inventor： Sung-Hun Lee ,  Jung-Bae Song ,  Gwan-Hyoung Lee

IPC: H01L27/32 ,  H01L51/50 ,  H01L51/52

CPC classification number: H01L27/3213 ,  H01L27/3209 ,  H01L27/322 ,  H01L27/3244 ,  H01L51/5036 ,  H01L51/5284

Abstract: An organic light emitting diode device is disclosed. The organic light emitting diode device includes a color calibration layer which is applied to the white sub-pixel. The color calibration layer selectively absorbs light in a given wavelength region thereby increasing luminance due to the white sub-pixel while simultaneously preventing the deformation of white color coordination. The contrast ratio may also be improved by reducing the reflection of external light, thereby minimizing the need for a polarizer, and the thickness of the device may thus be decreased and processing costs may be reduced.

公开(公告)号：US09306008B2

公开(公告)日：2016-04-05

申请号：US14207880

申请日：2014-03-13

Applicant: Dong-soo Lee ,  Myoung-Jae Lee ,  Seong-ho Cho ,  Mohammad Rakib Uddin ,  David Seo ,  Moon-seung Yang ,  Sang-moon Lee ,  Sung-hun Lee ,  Ji-hyun Hur ,  Eui-chul Hwang

Inventor： Dong-soo Lee ,  Myoung-Jae Lee ,  Seong-ho Cho ,  Mohammad Rakib Uddin ,  David Seo ,  Moon-seung Yang ,  Sang-moon Lee ,  Sung-hun Lee ,  Ji-hyun Hur ,  Eui-chul Hwang

IPC: H01L21/336 ,  H01L29/20 ,  H01L21/28 ,  H01L29/51 ,  H01L29/66 ,  H01L21/322 ,  H01L29/78 ,  H01L29/24

CPC classification number: H01L29/34 ,  H01L21/02175 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/02304 ,  H01L21/28158 ,  H01L21/28264 ,  H01L21/322 ,  H01L21/3228 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66522 ,  H01L29/7851

Abstract: The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.

Abstract translation: 本公开内容涉及包括III-V族化合物半导体层和电介质层之间的吸氧层的半导体器件以及制造该半导体器件的方法。 半导体器件可以包括化合物半导体层; 设置在所述化合物半导体层上的电介质层; 以及置于化合物半导体层和电介质层之间的吸氧层。 吸氧层包括具有比化合物半导体层的材料更高的氧亲合力的材料。

公开(公告)号：US08721905B2

公开(公告)日：2014-05-13

申请号：US13431516

申请日：2012-03-27

Applicant: Se-Hwan Yu ,  Ji Seon Lee ,  Yoon Ho Khang ,  Kahp Yang Suh ,  Hyoung Sick Um ,  Jae Jun Chae ,  Sung Hun Lee

Inventor： Se-Hwan Yu ,  Ji Seon Lee ,  Yoon Ho Khang ,  Kahp Yang Suh ,  Hyoung Sick Um ,  Jae Jun Chae ,  Sung Hun Lee

IPC: H01L21/302

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

Abstract: A method for forming a minute pattern mask includes forming an etching target layer on a substrate. A convex pattern including a plurality of convex parts is formed on the etching target layer. A resin composition is coated on the convex pattern to form a resin layer including a first region neighboring the convex part and a second region positioned between the neighboring convex parts. The resin layer is ashed or etched to form the plurality of first resin patterns. The plurality of first resin patterns is processed to form a minute pattern mask including a plurality of second resin patterns. The etching target layer is etched using the plurality of second resin patterns as an etch mask to form a minute pattern.

Abstract translation: 形成微图案掩模的方法包括在基板上形成蚀刻目标层。 在蚀刻目标层上形成包括多个凸部的凸形图案。 将树脂组合物涂覆在凸形图案上以形成包括邻近凸部的第一区域和位于相邻凸部之间的第二区域的树脂层。 树脂层被灰化或蚀刻以形成多个第一树脂图案。 处理多个第一树脂图案以形成包括多个第二树脂图案的微小图案掩模。 使用多个第二树脂图案作为蚀刻掩模蚀刻蚀刻目标层以形成微小图案。

公开(公告)号：US08536782B2

公开(公告)日：2013-09-17

申请号：US12968463

申请日：2010-12-15

Applicant: Sung-Hun Lee ,  Jung-Bae Song

Inventor： Sung-Hun Lee ,  Jung-Bae Song

IPC: H01L51/50

CPC classification number: H01L51/5262 ,  H01L51/5048 ,  H01L2251/558

Abstract: A blue light-emitting device, and an organic light-emitting display including the blue light-emitting device, has a non-resonance structure including a blue light-emitting layer between a reflective electrode and a transparent electrode, and thus has an excellent process margin, an excellent luminance characteristic even in a wide optical viewing angle, and a high color reproduction satisfying an sRGB blue standard.

Abstract translation: 蓝色发光装置和包括蓝色发光装置的有机发光显示器具有在反射电极和透明电极之间包括蓝色发光层的非共振结构，因此具有优异的工艺 边缘，即使在宽的光学视角中也具有优异的亮度特性，以及满足sRGB蓝色标准的高色彩再现。

公开(公告)号：US08440480B2

公开(公告)日：2013-05-14

申请号：US13196388

申请日：2011-08-02

Applicant: Eun Joo Jang ,  Shin Ae Jun ,  Sung Hun Lee ,  Tae Kyung Ahn ,  Seong Jae Choi

Inventor： Eun Joo Jang ,  Shin Ae Jun ,  Sung Hun Lee ,  Tae Kyung Ahn ,  Seong Jae Choi

IPC: H01L51/56

CPC classification number: H05B33/14 ,  B82Y20/00 ,  C09K11/08 ,  H01L33/08 ,  H01L33/24 ,  H01L51/5048 ,  Y10S977/779

Abstract: A nanocrystal electroluminescence device comprising a polymer hole transport layer, a nanocrystal light-emitting layer and an organic electron transport layer wherein the nanocrystal light-emitting layer is independently and separately formed between the polymer hole transport layer and the organic electron transport layer. According to the nanocrystal electroluminescence device, since the hole transport layer, the nanocrystal light-emitting layer and the electron transport layer are completely separated from one another, the electroluminescence device provides a pure nanocrystal luminescence spectrum having limited luminescence from other organic layers and substantially no influence by operational conditions, such as voltage. Further included is a method for fabricating the nanocrystal electroluminescence device.

Abstract translation: 纳米晶体电致发光器件包括聚合物空穴传输层，纳米晶体发光层和有机电子传输层，其中纳米晶体发光层独立且分别地形成在聚合物空穴传输层和有机电子传输层之间。 根据纳米晶体电致发光器件，由于空穴传输层，纳米晶体发光层和电子传输层彼此完全分离，所以电致发光器件提供纯的纳米晶体发光光谱，其具有来自其它有机层的发光有限并且基本上不含 受操作条件的影响，如电压。 还包括制造纳米晶体电致发光器件的方法。

公开(公告)号：US20120231118A1

公开(公告)日：2012-09-13

申请号：US13509525

申请日：2010-10-18

Applicant: Eun Seok Jang ,  Jae Hyun Chang ,  Sung Hun Lee ,  Hye Won Shin ,  Won Dae Chung ,  Kang Pyo Lee

Inventor： Eun Seok Jang ,  Jae Hyun Chang ,  Sung Hun Lee ,  Hye Won Shin ,  Won Dae Chung ,  Kang Pyo Lee

IPC: A23L1/20

CPC classification number: A23L27/50 ,  A23L11/07 ,  A23L11/09

Abstract: Disclosed is a method for preparing a soybean paste including: flaking or crushing raw soybeans, immersing the resulting flaked or crushed soybeans in water, followed by cooking and cooling, homogeneously mixing the soybeans with koji bacteria and a bean or grain powder, followed by fermenting and drying, and mixing the meju with table salt and distilled water and aging the resulting mixture. In accordance with the method, the soybeans are flaked or crushed to advantageously reduce hydrating and cooking periods of soybeans, form cracks on the soybean surfaces and increase surface areas, and allow beneficial microorganisms to easily use nutrients contained in soybeans, thus increase enzyme production, considerably reduce fermentation period of meju and aging period of soybean paste, obtain manufacturing soybean pastes with superior quality and improve production efficiency.

Abstract translation: 公开了一种制备大豆酱的方法，包括：将生的大豆剥落或破碎，将得到的片状或破碎的大豆浸入水中，随后烹饪和冷却，将大豆与曲霉菌和豆或粉末粉末均匀混合，随后发酵 并干燥，并将食盐与餐盐和蒸馏水混合，并使所得混合物老化。 根据该方法，将大豆片状或粉碎以有利地减少大豆的水合和烹煮期，在大豆表面形成裂纹并增加表面积，并允许有益微生物容易地使用大豆中含有的营养物质，从而增加酶的产生， 大大减少了酱油的发酵时间和大豆酱的老化时间，获得了制造质量优异，提高生产效率的大豆糊。

公开(公告)号：US20120211818A1

公开(公告)日：2012-08-23

申请号：US13299464

申请日：2011-11-18

Applicant: Sung-Hun Lee ,  Ki-Yong Kim ,  Sung-Wook Park ,  Gyu-Yeol Lee

Inventor： Sung-Hun Lee ,  Ki-Yong Kim ,  Sung-Wook Park ,  Gyu-Yeol Lee

IPC: H01L27/105 ,  H01L29/49 ,  H01L29/423

CPC classification number: H01L27/11524 ,  H01L21/28273 ,  H01L21/823437 ,  H01L21/823443 ,  H01L21/823456 ,  H01L27/11529 ,  H01L29/42328 ,  H01L29/495 ,  H01L29/4975 ,  H01L29/788

Abstract: In a semiconductor device, a first gate structure is provided in a cell transistor region and includes a floating gate electrode, a first dielectric layer pattern, and a control gate electrode including a first metal silicide pattern. A second gate structure is provided in a selecting transistor region and includes a first conductive layer pattern, a second dielectric layer pattern, and a first gate electrode including a second metal silicide pattern. A third gate structure is provided in a peripheral circuit region and includes a second conductive layer pattern, a third dielectric layer pattern including opening portions on the second conductive layer pattern, and a second gate electrode including a concavo-convex portion at an upper surface portion thereof and a third metal silicide pattern. The third metal silicide pattern has a uniform thickness.

Abstract translation: 在半导体器件中，第一栅极结构设置在单元晶体管区域中，并且包括浮置栅电极，第一介电层图案和包括第一金属硅化物图案的控制栅电极。 第二栅极结构设置在选择晶体管区域中，并且包括第一导电层图案，第二介电层图案和包括第二金属硅化物图案的第一栅电极。 第三栅极结构设置在外围电路区域中，并且包括第二导电层图案，在第二导电层图案上包括开口部分的第三介电层图案，以及在上表面部分包括凹凸部分的第二栅电极 和第三金属硅化物图案。 第三金属硅化物图案具有均匀的厚度。