公开(公告)号：US20100155223A1

公开(公告)日：2010-06-24

申请号：US12695643

申请日：2010-01-28

申请人： Tza-Jing GUNG ,  Xinyu FU ,  Arvind SUNDARRAJAN ,  Edward P. HAMMOND, IV ,  Praburam GOPALRAJA ,  John C. FORSTER ,  Mark A. PERRIN ,  Andrew S. GILLARD

发明人： Tza-Jing GUNG ,  Xinyu FU ,  Arvind SUNDARRAJAN ,  Edward P. HAMMOND, IV ,  Praburam GOPALRAJA ,  John C. FORSTER ,  Mark A. PERRIN ,  Andrew S. GILLARD

IPC分类号： C23C14/32

CPC分类号： H01J37/3266 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/358 ,  C23F4/00 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/32688 ,  H01J37/3408 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76865

摘要： A multi-step process performed in a plasma sputter chamber including sputter deposition from the target and argon sputter etching of the substrate. The chamber includes a quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the argon sputtering plasma. A TaN/Ta barrier is first sputter deposited with high target power and wafer bias. Argon etching is performed with even higher wafer bias. A flash step is applied with reduced target power and wafer bias.

摘要翻译： 在等离子体溅射室中执行的包括从靶的溅射沉积和对衬底的氩溅射蚀刻的多步骤过程。 该腔室包括一个四重电磁线圈阵列，该四极电磁线圈阵列围绕室内RF射频线圈背面的等离子体溅射反应器的侧壁外的腔室轴线同轴地布置。 可以单独控制线圈电流以产生不同的磁场分布，例如在其中溅射靶被驱动以将靶材料溅射到晶片上的溅射沉积模式和其中RF线圈支撑氩溅射的溅射蚀刻模式之间 等离子体。 首先以高目标功率和晶片偏置溅射沉积TaN / Ta势垒。 以更高的晶片偏压进行氩蚀刻。 应用闪光步骤，降低目标功率和晶片偏置。

公开(公告)号：US20100105203A1

公开(公告)日：2010-04-29

申请号：US12257143

申请日：2008-10-23

申请人： XINYU FU ,  Arvind Sundarrajan

发明人： XINYU FU ,  Arvind Sundarrajan

IPC分类号： H01L21/4763

CPC分类号： H01L21/76873 ,  H01L21/2855 ,  H01L21/76846 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of processing a substrate are provided herein. In some embodiments, a method of processing a substrate may include providing a substrate to a process chamber comprising a dielectric layer having a feature formed therein. A barrier layer may be formed within the feature. A coating of a first conductive material may be formed atop the barrier layer. A seed layer of the first conductive material may be formed atop the coating. The feature may be filled with a second conductive material. In some embodiments, the seed layer may be formed while maintaining the substrate at a temperature of greater than about 40 degrees Celsius.

摘要翻译： 本文提供了处理基板的方法。 在一些实施例中，处理衬底的方法可以包括向包括其中形成有特征的电介质层的处理室提供衬底。 可以在特征内形成阻挡层。 可以在阻挡层顶上形成第一导电材料的涂层。 第一导电材料的籽晶层可以形成在涂层顶上。 该特征可以用第二导电材料填充。 在一些实施例中，种子层可以在保持基底的温度高于约40摄氏度的同时形成。

公开(公告)号：US20100006425A1

公开(公告)日：2010-01-14

申请号：US12562607

申请日：2009-09-18

申请人： Xinyu Fu ,  Keyvan Kashefizadeh ,  Ashish Subhash Bodke ,  Winsor Lam ,  Yiochiro Tanaka ,  Wonwoo Kim

发明人： Xinyu Fu ,  Keyvan Kashefizadeh ,  Ashish Subhash Bodke ,  Winsor Lam ,  Yiochiro Tanaka ,  Wonwoo Kim

IPC分类号： C23C14/34

CPC分类号： H01L21/76846 ,  C23C14/0057 ,  C23C14/5853 ,  H01L21/2855 ,  H01L21/76856

摘要： Methods of forming a barrier layer are provided. In one embodiment, the method includes providing a substrate into a physical vapor deposition (PVD) chamber, supplying at least two reactive gases and an inert gas into the PVD chamber, sputtering a source material from a target disposed in the processing chamber in the presence of a plasma formed from the gas mixture, and forming a metal containing dielectric layer on the substrate from the source material. In another embodiment, the method includes providing a substrate into a PVD chamber, supplying a reactive gas the PVD chamber, sputtering a source material from a target disposed in the PVD chamber in the presence of a plasma formed from the reactive gas, forming a metal containing dielectric layer on the substrate from the source material, and post treating the metal containing layer in presence of species generated from a remote plasma chamber.

摘要翻译： 提供形成阻挡层的方法。 在一个实施例中，该方法包括将衬底提供到物理气相沉积（PVD）室中，将至少两种反应性气体和惰性气体供应到PVD室中，在存在的情况下从设置在处理室中的靶溅射源材料 的由所述气体混合物形成的等离子体，并且从所述源材料在所述衬底上形成含金属的电介质层。 在另一个实施例中，该方法包括将衬底提供到PVD腔室中，在反应气体形成的等离子体存在下，将反应气体提供给PVD腔室，从设置在PVD腔室中的靶材溅射源材料，形成金属 在来自源材料的基板上含有介电层，并且在从远程等离子体室产生的物质存在下对金属含有层进行后处理。

公开(公告)号：US07618893B2

公开(公告)日：2009-11-17

申请号：US12041804

申请日：2008-03-04

申请人： Xinyu Fu ,  Keyvan Kashefizadeh ,  Ashish Subhash Bodke ,  Winsor Lam ,  Yiochiro Tanaka ,  Wonwoo Kim

发明人： Xinyu Fu ,  Keyvan Kashefizadeh ,  Ashish Subhash Bodke ,  Winsor Lam ,  Yiochiro Tanaka ,  Wonwoo Kim

IPC分类号： H01L21/44

CPC分类号： H01L21/76846 ,  C23C14/0057 ,  C23C14/5853 ,  H01L21/2855 ,  H01L21/76856

摘要： Methods of forming a barrier layer are provided. In one embodiment, the method includes providing a substrate into a physical valor deposition (PVD) chamber, supplying at least two reactive gases and an inert gas into the PVD chamber, sputtering a source material from a target disposed in the processing chamber in the presence of a plasma formed from the gas mixture, and forming a metal containing dielectric layer on the substrate from the source material. In another embodiment, the method includes providing a substrate into a PVD chamber, supplying a reactive gas the PVD chamber, sputtering a source material from a target disposed in the PVD chamber in the presence of a plasma formed from the reactive gas, forming a metal containing dielectric layer on the substrate from the source material, and post treating the metal containing layer in presence of species generated from a remote plasma chamber.

摘要翻译： 提供形成阻挡层的方法。 在一个实施例中，该方法包括将衬底提供到物理气相沉积（PVD）室中，将至少两种反应性气体和惰性气体供应到PVD室中，在存在的情况下从设置在处理室中的靶溅射源材料 的由所述气体混合物形成的等离子体，并且从所述源材料在所述衬底上形成含金属的电介质层。 在另一个实施例中，该方法包括将衬底提供到PVD腔室中，在反应气体形成的等离子体存在下，将反应气体提供给PVD腔室，从设置在PVD腔室中的靶材溅射源材料，形成金属 在来自源材料的基板上含有介电层，并且在从远程等离子体室产生的物质存在下对金属含有层进行后处理。

公开(公告)号：US07618521B2

公开(公告)日：2009-11-17

申请号：US11218756

申请日：2005-09-02

申请人： Xinyu Fu

发明人： Xinyu Fu

IPC分类号： C23C14/35

CPC分类号： H01J37/3408 ,  C23C14/165 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/3461

摘要： A split magnet ring, particularly useful in a magnetron plasma reactor sputter depositing tantalum or tungsten or other barrier metal into a via and also resputter etching the deposited material from the bottom of the via onto the via sidewalls. The magnet ring includes two annular magnet rings composed of the same axial polarity separated by a non-magnetic spacing of at least the axial length of one magnet and associated poles. A small unbalanced magnetrons rotates about the back of the target having an outer pole of the same polarity as the ring magnets surrounding a weaker inner pole of the opposite pole.

摘要翻译： 分裂磁环，特别适用于磁控管等离子体反应器中，将钽或钨或其他阻挡金属溅射沉积到通孔中，并且还重新溅射将沉积的材料从通孔的底部蚀刻到通孔侧壁上。 磁环包括由相同的轴向极性组成的两个环形磁环，所述相同的轴向极性由至少一个磁体的轴向长度和相关电极的非磁性间隔分开。 一个小的不平衡磁控管围绕目标的背部转动，该外部磁极的外极与围绕相对极的较弱内极的环形磁体相同。

公开(公告)号：US20080190760A1

公开(公告)日：2008-08-14

申请号：US11838796

申请日：2007-08-14

申请人： XIANMIN TANG ,  Arvind Sundarrajan ,  Daniel Lubben ,  Qian Luo ,  Tza-Jing Gung ,  Anantha Subramani ,  Hua Chung ,  Xinyu Fu ,  Rongjun Wang ,  Yong Cao ,  Jick Yu ,  John Forster ,  Praburam Gopalraja

发明人： XIANMIN TANG ,  Arvind Sundarrajan ,  Daniel Lubben ,  Qian Luo ,  Tza-Jing Gung ,  Anantha Subramani ,  Hua Chung ,  Xinyu Fu ,  Rongjun Wang ,  Yong Cao ,  Jick Yu ,  John Forster ,  Praburam Gopalraja

IPC分类号： C23C14/32

CPC分类号： C23C14/165 ,  C23C14/046 ,  C23C14/358 ,  C23C14/5826 ,  C23C14/584 ,  H01J37/3408 ,  H01J37/3455 ,  H01L21/2855 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76877

摘要： An integrated copper deposition process, particularly useful for forming a copper seed layer in a narrow via prior to electrochemical plating of copper, including at least one cycle of sputter deposition of copper followed by sputter etching of the deposited copper, preferably performed in a same sputter chamber. The deposition is performed under conditions promoting high copper ionization fractions and strong wafer biasing to draw the copper ions into the via. The etching may be done with argon ions, preferably inductively excited by an RF coil around the chamber, or by copper ions, which may be formed with high target power and intense magnetron or by use of the RF coil. Two or more cycles of deposition/etch may be performed. A final flash deposition may be performed with high copper ionization and low wafer biasing.

摘要翻译： 一种集成的铜沉积工艺，特别适用于在铜的电化学电镀之前在窄通孔中形成铜籽晶层，包括至少一个铜的溅射沉积循环，然后溅射蚀刻沉积的铜，优选在相同的溅射 房间。 沉积在促进高铜离子化分数和强晶片偏置的条件下进行以将铜离子吸入通孔。 蚀刻可以用氩离子进行，优选地通过围绕室的RF线圈进行感应激励，或者通过可以用高目标功率和强磁控管形成的铜离子或通过使用RF线圈进行。 可以执行两个或更多个沉积/蚀刻循环。 最终的闪蒸沉积可以用高铜离子化和低晶片偏压进行。

公开(公告)号：US08852674B2

公开(公告)日：2014-10-07

申请号：US12945445

申请日：2010-11-12

申请人： Xinyu Fu ,  Jick M. Yu

发明人： Xinyu Fu ,  Jick M. Yu

IPC分类号： C23C18/00 ,  H01L23/532 ,  H01L21/768

CPC分类号： H01L23/53233 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76867 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods for forming interconnect or interconnections on a substrate for use in a microelectric device are disclosed. In one or more embodiments, the method includes depositing an alloy layer comprising Cu and an alloying element, for, example, Mn, in a dielectric layer and segregating or diffusing the alloying element from the bulk Cu portion of the alloy layer. In one or more embodiments, the method includes annealing the alloy layer in an atomic hydrogen atmosphere. After annealing, the alloy layer exhibits a resistivity that is substantially equivalent to the resistivity of a pure Cu layer.

摘要翻译： 公开了在用于微电子器件的衬底上形成互连或互连的方法。 在一个或多个实施例中，该方法包括在电介质层中沉积包含Cu和合金元素（例如Mn）的合金层，并将合金元素与合金层的本体Cu部分分离或扩散。 在一个或多个实施例中，该方法包括在原子氢气氛中退火合金层。 退火后，合金层的电阻率基本上等于纯Cu层的电阻率。

公开(公告)号：US08772162B2

公开(公告)日：2014-07-08

申请号：US13906543

申请日：2013-05-31

申请人： Bo Zheng ,  Arvind Sundarrajan ,  Xinyu Fu

发明人： Bo Zheng ,  Arvind Sundarrajan ,  Xinyu Fu

IPC分类号： H01L21/44

CPC分类号： H01L21/02063 ,  H01J37/32082 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/743 ,  H01L21/768

摘要： Native oxides and associated residue are removed from surfaces of a substrate by sequentially performing two plasma cleaning processes on the substrate in a single processing chamber. The first plasma cleaning process removes native oxide formed on a substrate surface by generating a cleaning plasma from a mixture of ammonia (NH3) and nitrogen trifluoride (NF3) gases, condensing products of the cleaning plasma on the native oxide to form a thin film that contains ammonium hexafluorosilicate ((NH4)2SiF6), and subliming the thin film off of the substrate surface. The second plasma cleaning process removes remaining residues of the thin film by generating a second cleaning plasma from nitrogen trifluoride gas. Products of the second cleaning plasma react with a few angstroms of the bare silicon present on the surface, forming silicon tetrafluoride (SiF4) and lifting off residues of the thin film.

摘要翻译： 通过在单个处理室中在衬底上依次执行两个等离子体清洗工艺，从衬底的表面除去天然氧化物和相关残留物。 第一等离子体清洁工艺通过从氨（NH 3）和三氟化氮（NF 3）气体的混合物中产生清洁等离子体，从而将清洁等离子体的产物冷凝在天然氧化物上，从而去除在基底表面上形成的天然氧化物，形成薄膜， 含有六氟硅酸铵（（NH 4）2 SiF 6），并将薄膜从衬底表面上升华。 通过从三氟化氮气体产生第二清洗等离子体，第二等离子体清洗工艺去除剩余的薄膜残留物。 第二清洗等离子体的产物与表面上存在的裸硅几埃反应，形成四氟化硅（SiF4）并提取薄膜的残留物。

公开(公告)号：US08580354B2

公开(公告)日：2013-11-12

申请号：US13209760

申请日：2011-08-15

申请人： Xinyu Fu ,  Jick M. Yu

发明人： Xinyu Fu ,  Jick M. Yu

IPC分类号： C23C14/02 ,  C23C14/16 ,  C23C14/58 ,  B05D3/06 ,  H05H1/24 ,  H05H1/46 ,  C23C14/18

CPC分类号： C23C16/0245 ,  H01J37/32357

摘要： A plasma processing chamber particularly useful for pre-treating low-k dielectric films and refractory metal films subject to oxidation prior to deposition of other layers. A remote plasma source (RPS) excites a processing gas into a plasma and delivers it through a supply tube to a manifold in back of a showerhead faceplate. The chamber is configured for oxidizing and reducing plasmas in the same or different processes when oxygen and hydrogen are selectively supplied to the RPS. The supply tube and showerhead may be formed of dielectric oxides which may be passivated by a water vapor plasma from the remote plasma source. In one novel process, a protective hydroxide coating is formed on refractory metals by alternating neutral plasmas of hydrogen and oxygen.

摘要翻译： 一种等离子体处理室，特别适用于在沉积其它层之前预处理低k电介质膜和难以处理的金属薄膜。 远程等离子体源（RPS）将处理气体激发到等离子体中并将其通过供应管输送到喷头面板背面的歧管。 当氧气和氢气选择性地供应给RPS时，该室被配置用于在相同或不同的过程中氧化和还原等离子体。 供应管和喷头可以由介电氧化物形成，其可以由远程等离子体源的水蒸汽等离子体钝化。 在一个新颖的方法中，通过交替的氢和氧的中性等离子体在难熔金属上形成保护性氢氧化物涂层。

公开(公告)号：US20120252207A1

公开(公告)日：2012-10-04

申请号：US13174692

申请日：2011-06-30

申请人： Yu Lei ,  Xinyu Fu ,  Anantha Subramani ,  Seshadri Ganguli ,  Srinivas Gandikota

发明人： Yu Lei ,  Xinyu Fu ,  Anantha Subramani ,  Seshadri Ganguli ,  Srinivas Gandikota

IPC分类号： H01L21/283 ,  B82Y40/00

CPC分类号： H01L21/02697 ,  B82Y40/00 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/7681 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention provide methods for forming materials on a substrate used for metal gate and other applications. In one embodiment, a method includes forming a cobalt stack over a barrier layer disposed on a substrate by depositing a cobalt layer during a deposition process, exposing the cobalt layer to a plasma to form a plasma-treated cobalt layer during a plasma process, and repeating the cobalt deposition process and the plasma process to form the cobalt stack containing a plurality of plasma-treated cobalt layers. The method further includes exposing the cobalt stack to an oxygen source gas to form a cobalt oxide layer from an upper portion of the cobalt stack during a surface oxidation process and heating the remaining portion of the cobalt stack to a temperature within a range from about 300° C. to about 500° C. to form a crystalline cobalt film during a thermal annealing crystallization process.

摘要翻译： 本发明的实施例提供了在用于金属栅极和其它应用的基板上形成材料的方法。 在一个实施例中，一种方法包括通过在沉积工艺期间沉积钴层而在设置在衬底上的势垒层上形成钴堆叠，在等离子体工艺期间将钴层暴露于等离子体以形成等离子体处理的钴层，以及 重复钴沉积工艺和等离子体工艺以形成含有多个等离子体处理的钴层的钴堆。 该方法还包括将钴堆叠暴露于氧源气体，以在表面氧化过程期间从钴堆叠的上部形成钴氧化物层，并将钴堆叠的剩余部分加热至约300 约500℃，以在热退火结晶过程中形成结晶钴膜。