公开(公告)号：US10453655B2

公开(公告)日：2019-10-22

申请号：US16213978

申请日：2018-12-07

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Hideo Sugai ,  Soonam Park ,  Kartik Ramaswamy ,  Dmitry Lubomirsky

IPC: H01J37/32

Abstract: A plasma reactor for processing a workpiece has a microwave source with a digitally synthesized rotation frequency using direct digital up-conversion and a user interface for controlling the rotation frequency.

公开(公告)号：US20190311883A1

公开(公告)日：2019-10-10

申请号：US16448305

申请日：2019-06-21

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky ,  Peter Hillman ,  Soonam Park ,  Martin Yue Choy ,  Lala Zhu

IPC: H01J37/32

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define a central channel through the adapter. The adapter may define an exit from a second channel at the second end, and the adapter may define an exit from a third channel at the second end. The central channel, the second channel, and the third channel may each be fluidly isolated from one another within the adapter.

公开(公告)号：US20190304756A1

公开(公告)日：2019-10-03

申请号：US16374420

申请日：2019-04-03

Applicant: Applied Materials, Inc.

Inventor： Laksheswar Kalita ,  Soonam Park ,  Toan Q. Tran ,  Lili Ji ,  Dmitry Lubomirsky ,  Akhil Devarakonda ,  Tien Fak Tan ,  Tae Won Kim ,  Saravjeet Singh ,  Alexander Tam ,  Jingchun Zhang ,  Jing J. Zhang

IPC: H01J37/32 ,  C23C4/134 ,  C23C4/11

Abstract: Systems and methods may be used to produce coated components. Exemplary chamber components may include an aluminum, stainless steel, or nickel plate defining a plurality of apertures. The plate may include a hybrid coating, and the hybrid coating may include a first layer comprising a corrosion resistant coating. The first layer may extend conformally through each aperture of the plurality of apertures. The hybrid coating may also include a second layer comprising an erosion resistant coating extending across a plasma-facing surface of the semiconductor chamber component.

公开(公告)号：US10354843B2

公开(公告)日：2019-07-16

申请号：US15581357

申请日：2017-04-28

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Xinglong Chen ,  Kien Chuc ,  Dmitry Lubomirsky ,  Soonam Park ,  Jang-Gyoo Yang ,  Shankar Venkataraman ,  Toan Tran ,  Kimberly Hinckley ,  Saurabh Garg

IPC: C23C16/455 ,  H01J37/32 ,  B05B1/00 ,  C23C16/452 ,  B05B1/18 ,  C23C16/50 ,  H01L21/67

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

公开(公告)号：US10319649B2

公开(公告)日：2019-06-11

申请号：US15484985

申请日：2017-04-11

Applicant: Applied Materials, Inc.

Inventor： Tae Seung Cho ,  Soonam Park ,  Junghoon Kim ,  Dmitry Lubomirsky ,  Shankar Venkataraman

IPC: H01L21/26 ,  H01L21/66 ,  G01N21/73 ,  H01L21/67 ,  H01J37/32 ,  H01L21/311

Abstract: Methods and systems for etching substrates using a remote plasma are described. Remotely excited etchants are formed in a remote plasma and flowed through a showerhead into a substrate processing region to etch the substrate. Optical emission spectra are acquired from the substrate processing region just above the substrate. The optical emission spectra may be used to determine an endpoint of the etch, determine the etch rate or otherwise characterize the etch process. A weak plasma may be present in the substrate processing region. The weak plasma may have much lower intensity than the remote plasma. In cases where no bias plasma is used above the substrate in an etch process, a weak plasma may be ignited near a viewport disposed near the side of the substrate processing region to characterize the etchants.

公开(公告)号：US20180337024A1

公开(公告)日：2018-11-22

申请号：US15981089

申请日：2018-05-16

Applicant: Applied Materials, Inc.

Inventor： Tien Fak Tan ,  Dmitry Lubomirsky ,  Soonwook Jung ,  Soonam Park ,  Raymond W. Lu ,  Phong Pham ,  Edwin C. Suarez

IPC: H01J37/32 ,  H01L21/3065 ,  C23C16/455

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define an opening to a central channel at the first end, and the central channel may be characterized by a first cross-sectional surface area. The adapter may define an exit from a second channel at the second end, and the adapter may define a transition between the central channel and the second channel within the adapter between the first end and the second end. The adapter may define a third channel between the transition and the second end of the adapter, and the third channel may be fluidly isolated from the central channel and the second channel.

公开(公告)号：US20180294198A1

公开(公告)日：2018-10-11

申请号：US15484985

申请日：2017-04-11

Applicant: Applied Materials, Inc.

Inventor： Tae Seung Cho ,  Soonam Park ,  Junghoon Kim ,  Dmitry Lubomirsky ,  Shankar Venkataraman

IPC: H01L21/66 ,  G01N21/73 ,  H01L21/3065 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L22/26 ,  G01N21/73 ,  G01N2201/08 ,  G01N2201/0833 ,  H01J37/32082 ,  H01J37/32568 ,  H01J37/32743 ,  H01J2237/3341 ,  H01L21/31116 ,  H01L21/67253

Abstract: Methods and systems for etching substrates using a remote plasma are described. Remotely excited etchants are formed in a remote plasma and flowed through a showerhead into a substrate processing region to etch the substrate. Optical emission spectra are acquired from the substrate processing region just above the substrate. The optical emission spectra may be used to determine an endpoint of the etch, determine the etch rate or otherwise characterize the etch process. A weak plasma may be present in the substrate processing region. The weak plasma may have much lower intensity than the remote plasma. In cases where no bias plasma is used above the substrate in an etch process, a weak plasma may be ignited near a viewport disposed near the side of the substrate processing region to characterize the etchants.

公开(公告)号：US20180226230A1

公开(公告)日：2018-08-09

申请号：US15424488

申请日：2017-02-03

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Hideo Sugai ,  Nikolai Kalnin ,  Soonam Park ,  Toan Tran ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  H01L21/67

Abstract: A system includes a process chamber, a housing that defines a waveguide cavity, and a first conductive plate within the housing. The first conductive plate faces the process chamber. The system also includes one or more adjustment devices that can adjust at least a position of the first conductive plate, and a second conductive plate, coupled with the housing, between the waveguide cavity and the process chamber. Electromagnetic radiation can propagate from the waveguide cavity into the process chamber through apertures in the second conductive plate. The system also includes a dielectric plate that seals off the process chamber from the waveguide cavity, and one or more electronics sets that transmit the electromagnetic radiation into the waveguide cavity. A plasma forms when at least one process gas is within the chamber, and the electromagnetic radiation propagates into the process chamber from the waveguide cavity.

公开(公告)号：US09922840B2

公开(公告)日：2018-03-20

申请号：US14793508

申请日：2015-07-07

Applicant: Applied Materials, Inc.

Inventor： Soonam Park ,  Kenneth D. Schatz ,  Soonwook Jung ,  Dmitry Lubomirsky

IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/67069

Abstract: Methods of selectively etching an exposed portion of a patterned substrate relative to a second exposed portion are described. The etching process is a gas phase etch which uses an oxidizing precursor unexcited in any plasma prior to combination with plasma effluents formed in a remote plasma from an inert precursor. The plasma effluents may be combined with the oxidizing precursor in a plasma-free remote chamber region and/or in a plasma-free substrate processing region. The combination of the plasma effluents excites the oxidizing precursor and removes material from the exposed portion of the patterned substrate. The etch rate is controllable and selectable by adjusting the flow rate of the oxidizing precursor or the unexcited/plasma-excited flow rate ratio.

公开(公告)号：US20180073994A1

公开(公告)日：2018-03-15

申请号：US15817599

申请日：2017-11-20

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Yufei Zhu ,  Saurabh Garg ,  Soonam Park ,  Dmitry Lubomirsky

IPC: G01N22/00

CPC classification number: G01N22/00

Abstract: A test fixture includes an outer conductor and an inner conductor disposed within and electrically isolated from the outer conductor. The inner conductor includes a top portion having a first diameter, a bottom portion having a second diameter, and a third portion proximate the bottom portion that has a third diameter that is less than the second diameter and is greater than the first diameter. An electrical property of a chamber component disposed within the outer conductor is measurable based on application of a signal to at least one of the outer conductor or the inner conductor.