公开(公告)号：US10446418B2

公开(公告)日：2019-10-15

申请号：US14677901

申请日：2015-04-02

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Yogananda Sarode Vishwanath ,  Tom K. Cho

IPC: C23C16/44 ,  H01L21/67 ,  H01J37/32

Abstract: The present disclosure generally relates to process chambers having modular design to provide variable process volume and improved flow conductance and uniformity. The modular design according to the present disclosure achieves improved process uniformity and symmetry with simplified chamber structure. The modular design further affords flexibility of performing various processes or processing substrates of various sizes by replacing one or more modules in a modular process chamber according to the present disclosure.

公开(公告)号：US20150170924A1

公开(公告)日：2015-06-18

申请号：US14108692

申请日：2013-12-17

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Kartik Ramaswamy ,  Srinivas Nemani ,  Bradley Howard ,  Yogananda Sarode Vishwanath

IPC: H01L21/3065 ,  C23C16/513 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/311

CPC classification number: H01J37/32495 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32568 ,  H01J37/32807 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069

Abstract: An exemplary semiconductor processing system may include a remote plasma source coupled with a processing chamber having a top plate. An inlet assembly may be used to couple the remote plasma source with the top plate and may include a mounting assembly, which in embodiments may include at least two components. The inlet assembly may further include a precursor distribution assembly defining a plurality of distribution channels fluidly coupled with an injection port.

Abstract translation: 示例性半导体处理系统可以包括与具有顶板的处理室耦合的远程等离子体源。 入口组件可以用于将远程等离子体源与顶板耦合，并且可以包括安装组件，其在实施例中可以包括至少两个组件。 入口组件还可以包括限定与注射口流体连接的多个分配通道的前体分布组件。

公开(公告)号：US20140232263A1

公开(公告)日：2014-08-21

申请号：US14270578

申请日：2014-05-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Andrew Nguyen ,  Kartik Ramaswamy ,  Jason A. Kenney ,  Shahid Rauf ,  Kenneth S. Collins ,  Yang Yang ,  Steven Lane ,  Yogananda Sarode Vishwanath

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  C23C16/45563 ,  C23C16/509 ,  H01J37/32174 ,  H05H1/46 ,  H05H2001/4667

Abstract: A plasma reactor has an overhead multiple coil antennas including a parallel spiral coil antenna and symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source.

Abstract translation: 等离子体反应器具有架空多重线圈天线，包括平行的螺旋线圈天线以及围绕对称和径向射频馈送的对称和径向射频馈送以及圆柱形RF屏蔽。 径向RF馈送对称地馈送到等离子体源。

公开(公告)号：US20250087524A1

公开(公告)日：2025-03-13

申请号：US18958317

申请日：2024-11-25

Applicant: Applied Materials, Inc.

Inventor： Helder Lee ,  Nicholas Michael Kopec ,  Leon Volfovski ,  Douglas R. McAllister ,  Andreas Schmid ,  Jeffrey Hudgens ,  Yogananda Sarode Vishwanath ,  Steven Babayan

IPC: H01L21/687 ,  H01L21/673 ,  H01L21/677 ,  H01L21/68

Abstract: A process kit enclosure system includes walls and a retention device structure. The retention device structure includes a retention device post and a retention device fin. The retention device fin in a first position is disposed above and secures a process kit ring supported in the interior volume of the process kit enclosure system. The retention device fin is rotated from the first position to be in a second position to be outside a boundary of the process kit ring. The retention device post is aligned with and inserts into a recess formed by a top cover of the process kit enclosure system responsive to the retention device post being in the first position. The retention device post is misaligned with and blocked from inserting into the recess formed by the top cover responsive to the retention device post of the retention device structure being in the second position.

公开(公告)号：US20240420932A1

公开(公告)日：2024-12-19

申请号：US18209649

申请日：2023-06-14

Applicant: Applied Materials, Inc.

Inventor： Yogananda Sarode Vishwanath ,  Xue Yang Chang

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/687

Abstract: Substrate support components including an integrally formed insulator body including a first surface and a second surface opposite the first surface, and a thickness of the insulator body exceeds an arcing threshold between the first body and the second body when the insulator body is arranged between a first electrically conductive body and a second electrically conductive body. The insulator body includes gas conduits within the insulator body and forming a gas flow path from the first surface to the second surface, including a gas conductance plug embedded within a first portion of the gas conduit and having at least a threshold gas conductance through the gas conductance plug, wherein the gas conductance plug obstructs an electrical discharge path between the first body and the second body when the insulator body is arranged with respect to the first body and the second body.

公开(公告)号：US12165905B2

公开(公告)日：2024-12-10

申请号：US16417348

申请日：2019-05-20

Applicant: Applied Materials, Inc.

Inventor： Helder Lee ,  Nicholas Michael Kopec ,  Leon Volfovski ,  Douglas R. McAllister ,  Andreas Schmid ,  Jeffrey Hudgens ,  Yogananda Sarode Vishwanath ,  Steven Babayan

IPC: H01L21/687 ,  H01L21/673 ,  H01L21/677 ,  H01L21/68

Abstract: A process kit enclosure system includes surfaces to enclose an interior volume, a first support structure including first fins, a second support structure including second fins, and a front interface to interface the process kit enclosure system with a load port of a wafer processing system. The first and second fins are sized and spaced to hold process kit ring carriers and process kit rings in the interior volume. Each of the process kit rings is secured to one of the process kit ring carriers. The process kit enclosure system enables first automated transfer of a first process kit ring carrier securing a first process kit ring from the process kit enclosure system into the wafer processing system and second automated transfer of a second process kit ring carrier securing a second process kit ring from the wafer processing system into the process kit enclosure system.

公开(公告)号：US20240304486A1

公开(公告)日：2024-09-12

申请号：US18206443

申请日：2023-06-06

Applicant: Applied Materials, Inc.

Inventor： Yogananda Sarode Vishwanath ,  Anand Kumar

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/687

CPC classification number: H01L21/6833 ,  H01J37/3244 ,  H01J37/32724 ,  H01L21/68757 ,  H01J2237/334

Abstract: An electrostatic chuck (ESC) having a ceramic body including embedded electrodes and having a first diameter. Three or more regions are defined on a surface and arranged concentrically on the surface, each region includes a retaining ring arranged on the surface and defining an outer edge of the region, and supportive structures arranged on the surface and within the region. The supportive structures are configured to support a surface of a substrate when the substrate is retained by the ESC. The ESC includes conduits formed in the ceramic body and configured to independently introduce a gas into each region through the ceramic body and to the first surface. Each region is configured to retain a corresponding positive gas pressure within the region and the surface of the substrate, and the one or more embedded electrodes are configured to generate a retaining force on the surface of the substrate.

公开(公告)号：US11887879B2

公开(公告)日：2024-01-30

申请号：US17365612

申请日：2021-07-01

Applicant: Applied Materials, Inc.

Inventor： Yogananda Sarode Vishwanath ,  Steven E. Babayan ,  Stephen Prouty ,  Andreas Schmid

IPC: H01L21/687 ,  C23C16/458 ,  H01J37/32 ,  H01L21/677 ,  H01L21/683

CPC classification number: H01L21/68707 ,  C23C16/4584 ,  C23C16/4585 ,  H01J37/32623 ,  H01L21/67748 ,  H01L21/6831 ,  H01L21/68721 ,  H01L21/68742

Abstract: Aspects of the present disclosure generally relate to apparatuses and methods for edge ring replacement in processing chambers. In one aspect, a carrier for supporting an edge ring is disclosed. In other aspects, robot blades for supporting a carrier are disclosed. In another aspect, a support structure for supporting a carrier in a degassing chamber is disclosed. In another aspect, a method of transferring an edge ring on a carrier is disclosed.

公开(公告)号：US11728143B2

公开(公告)日：2023-08-15

申请号：US17033177

申请日：2020-09-25

Applicant: Applied Materials, Inc.

Inventor： Yogananda Sarode Vishwanath

IPC: H01L21/687 ,  H01L21/683 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32642 ,  H01J37/321 ,  H01J37/32091 ,  H01J37/32522 ,  H01J37/32724 ,  H01L21/3065 ,  H01L21/6833 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68764 ,  H01L21/68785 ,  H01J37/32513 ,  H01J2237/002 ,  H01J2237/2001 ,  H01J2237/334 ,  H01J2237/3343

Abstract: Process kits, processing chambers, and methods for processing a substrate are provided. The process kit includes an edge ring, a sliding ring, an adjustable tuning ring, and an actuating mechanism. The edge ring has a first ring component interfaced with a second ring component that is movable relative to the first ring component forming a gap therebetween. The sliding ring is positioned beneath the second ring component of the edge ring. The adjustable tuning ring is positioned beneath the sliding ring. The actuating mechanism is interfaced with the lower surface of the adjustable tuning ring and configured to actuate the adjustable tuning ring such that the gap between the first and second ring components is varied. In one or more examples, the sliding ring includes a matrix and a coating, the matrix contains an electrically conductive material and the coating contains an electrically insulting material.

公开(公告)号：US11437261B2

公开(公告)日：2022-09-06

申请号：US16217036

申请日：2018-12-11

Applicant: Applied Materials, Inc.

Inventor： Yogananda Sarode Vishwanath ,  Steven E. Babayan ,  Stephen Donald Prouty ,  Álvaro García De Gorordo ,  Andreas Schmid ,  Andrew Antoine Noujaim

IPC: H05B3/68 ,  H01L21/683 ,  H01L21/67

Abstract: Embodiments described herein relate to a substrate support assembly which enables a cryogenic temperature operation of an electrostatic chuck (ESC) so that a substrate disposed thereon is maintained at a cryogenic processing temperature suitable for processing while other surfaces of a processing chamber are maintained at a different temperature. The substrate support assembly includes an electrostatic chuck (ESC), an ESC base assembly coupled to the ESC having a refrigerant channel disposed therein, and a facility plate having a coolant channel disposed therein. The facility plate includes a plate portion and a flange portion. The plate portion is coupled to the ESC base assembly and the flange portion coupled to the ESC with a seal assembly. A vacuum region is defined by the ESC, the ESC base assembly, the plate portion of the facility plate, the flange portion of the facility plate, and the seal assembly.