公开(公告)号：US20240234483A9

公开(公告)日：2024-07-11

申请号：US18491779

申请日：2023-10-22

Applicant: ASM IP Holding B.V.

Inventor： Alessandra Leonhardt ,  Michael Eugene Givens ,  Giuseppe Alessio Verni ,  Qi Xie

IPC: H10B12/10

CPC classification number: H01L28/75

Abstract: Methods of processing a substrate and related structures and systems. Described methods comprise forming a distal dipole layer on to a distal material layer; forming a high-k dielectric on the distal dipole layer; and, forming a proximal dipole layer on the high-k dielectric.

公开(公告)号：US20240175129A1

公开(公告)日：2024-05-30

申请号：US18518042

申请日：2023-11-22

Applicant: ASM IP Holding B.V.

Inventor： Bart Vermeulen ,  Varun Sharma ,  Jerome Innocent ,  Charles Dezelah ,  Michael Eugene Givens

IPC: C23C16/455 ,  C23C16/22

CPC classification number: C23C16/45527 ,  C23C16/22 ,  C23C16/45553

Abstract: Disclosed are methods for forming layers comprising a group 14 element, a pnictogen, and a chalcogen. In some embodiments, the group 14 element comprises germanium, the pnictogen comprises antimony, and the chalcogen comprises tellurium. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises exposing a substrate to two different group 14 precursors, to two different pnictogen precursors, or to two different chalcogen precursors. Further discloses are related systems and methods. Suitable systems include atomic layer deposition systems. Suitable devices include phase change memory devices.

公开(公告)号：US20240096711A1

公开(公告)日：2024-03-21

申请号：US18522867

申请日：2023-11-29

Applicant: ASM IP Holding B.V.

Inventor： Qi Xie ,  Chiyu Zhu ,  Kiran Shrestha ,  Pauline Calka ,  Oreste Madia ,  Jan Willem Maes ,  Michael Eugene Givens

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L21/823842 ,  H01L27/092 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

Abstract: A method for forming a semiconductor device structure is disclosure. The method may include, depositing an NMOS gate dielectric and a PMOS gate dielectric over a semiconductor substrate, depositing a first work function metal over the NMOS gate dielectric and over the PMOS gate dielectric, removing the first work function metal over the PMOS gate dielectric, and depositing a second work function metal over the NMOS gate dielectric and over the PMOS gate dielectric. Semiconductor device structures including desired metal gate electrodes deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US20240030296A1

公开(公告)日：2024-01-25

申请号：US18376014

申请日：2023-10-03

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Peng-Fu Hsu ,  Michael Eugene Givens ,  Qi Xie

IPC: H01L29/40 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  C23C16/40 ,  H01L29/51 ,  H01L29/78 ,  H01L29/161

CPC classification number: H01L29/408 ,  H01L21/02145 ,  H01L21/0228 ,  H01L21/022 ,  H01L21/28158 ,  H01L29/66477 ,  C23C16/403 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78 ,  H01L21/02205 ,  C23C16/401 ,  H01L29/161

Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

公开(公告)号：US20230420256A1

公开(公告)日：2023-12-28

申请号：US18236051

申请日：2023-08-21

Applicant: ASM IP Holding B.V.

Inventor： Ivan Zyulkov ,  David Kurt de Roest ,  Yoann Tomczak ,  Michael Eugene Givens ,  Perttu Sippola ,  Tatiana Ivanova ,  Zecheng Liu ,  Bokheon Kim ,  Daniele Piumi

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/02 ,  H01L21/3105

CPC classification number: H01L21/0337 ,  H01L21/0332 ,  H01L21/0273 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/0228 ,  H01L21/02172 ,  H01L21/02205

Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer that includes metal. Techniques for treating a surface of the photoresist underlayer and/or depositing an additional layer overlying the photoresist underlayer are also disclosed.

公开(公告)号：US11769664B2

公开(公告)日：2023-09-26

申请号：US17577073

申请日：2022-01-17

Applicant: ASM IP Holding B.V.

Inventor： Tatiana Ivanova ,  Perttu Sippola ,  Michael Eugene Givens

IPC: H01L21/02 ,  H01L29/51 ,  H01L21/28

CPC classification number: H01L21/02194 ,  H01L21/0228 ,  H01L21/02181 ,  H01L21/02192 ,  H01L21/02205 ,  H01L21/02356 ,  H01L21/28185 ,  H01L21/28194 ,  H01L29/517

Abstract: A method for depositing a hafnium lanthanum oxide film on a substrate by a cyclical deposition in a reaction chamber is disclosed. The method may include: depositing a hafnium oxide film on the substrate utilizing a first sub-cycle of the cyclical deposition process and depositing a lanthanum oxide film utilizing a second sub-cycle of the cyclical deposition process.

公开(公告)号：US11695054B2

公开(公告)日：2023-07-04

申请号：US17411306

申请日：2021-08-25

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Kiran Shrestha ,  Petri Raisanen ,  Michael Eugene Givens

IPC: H01L29/51 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  C23C16/455 ,  H01L29/49 ,  C23C16/34

CPC classification number: H01L29/517 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/0228 ,  H01L21/02175 ,  H01L21/02205 ,  H01L21/28194 ,  H01L29/4966 ,  H01L29/66568

Abstract: Methods for forming a semiconductor device structure are provided. The methods may include forming a molybdenum nitride film on a substrate by atomic layer deposition by contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, contacting the substrate with a second vapor phase reactant comprise a nitrogen precursor, and contacting the substrate with a third vapor phase reactant comprising a reducing precursor. The methods provided may also include forming a gate electrode structure comprising the molybdenum nitride film, the gate electrode structure having an effective work function greater than approximately 5.0 eV. Semiconductor device structures including molybdenum nitride films are also provided.

公开(公告)号：US20220367647A1

公开(公告)日：2022-11-17

申请号：US17873885

申请日：2022-07-26

Applicant: ASM IP Holding B.V.

Inventor： Fu Tang ,  Peng-Fu Hsu ,  Michael Eugene Givens ,  Qi Xie

IPC: H01L29/40 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  C23C16/40 ,  H01L29/51 ,  H01L29/78 ,  H01L29/161

Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

公开(公告)号：US20220139702A1

公开(公告)日：2022-05-05

申请号：US17577073

申请日：2022-01-17

Applicant: ASM IP Holding B.V.

Inventor： Tatiana Ivanova ,  Perttu Sippola ,  Michael Eugene Givens

IPC: H01L21/02 ,  H01L29/51 ,  H01L21/28

Abstract: A method for depositing a hafnium lanthanum oxide film on a substrate by a cyclical deposition in a reaction chamber is disclosed. The method may include: depositing a hafnium oxide film on the substrate utilizing a first sub-cycle of the cyclical deposition process and depositing a lanthanum oxide film utilizing a second sub-cycle of the cyclical deposition process.

公开(公告)号：US11227763B2

公开(公告)日：2022-01-18

申请号：US16790780

申请日：2020-02-14

Applicant: ASM IP Holding B.V.

Inventor： Tatiana Ivanova ,  Perttu Sippola ,  Michael Eugene Givens

IPC: H01L21/02 ,  H01L29/51 ,  H01L21/28

Abstract: A method for depositing a hafnium lanthanum oxide film on a substrate by a cyclical deposition in a reaction chamber is disclosed. The method may include: depositing a hafnium oxide film on the substrate utilizing a first sub-cycle of the cyclical deposition process and depositing a lanthanum oxide film utilizing a second sub-cycle of the cyclical deposition process.