公开(公告)号：US08390004B2

公开(公告)日：2013-03-05

申请号：US12676592

申请日：2008-08-25

申请人： Adrian Stefan Avramescu ,  Hans-Juergen Lugauer ,  Matthias Peter ,  Stephan Miller

发明人： Adrian Stefan Avramescu ,  Hans-Juergen Lugauer ,  Matthias Peter ,  Stephan Miller

IPC分类号： H01L27/15 ,  H01L29/16 ,  H01L31/12 ,  H01L33/00 ,  H01L29/06 ,  H01L31/00

CPC分类号： H01L33/08 ,  H01L33/06

摘要： A light-emitting structure includes a p-doped region for injecting holes and an n-doped region for injecting electrons. At least one InGaN quantum well of a first type and at least one InGaN quantum well of a second type are arranged between the n-doped region and the p-doped region. The InGaN quantum well of the second type has a higher indium content than the InGaN quantum well of the first type.

摘要翻译： 发光结构包括用于注入空穴的p掺杂区域和用于注入电子的n掺杂区域。 第一类型的至少一个InGaN量子阱和第二类型的至少一个InGaN量子阱布置在n掺杂区域和p掺杂区域之间。 第二类型的InGaN量子阱具有比第一类InGaN量子阱更高的铟含量。

公开(公告)号：US20110248295A1

公开(公告)日：2011-10-13

申请号：US13122779

申请日：2009-08-11

申请人： Peter Stauss ,  Reiner Windisch ,  Frank Baumann ,  Matthias Peter

发明人： Peter Stauss ,  Reiner Windisch ,  Frank Baumann ,  Matthias Peter

IPC分类号： H01L33/50

CPC分类号： H01L25/0753 ,  H01L33/08 ,  H01L33/50 ,  H01L2224/32225 ,  H01L2924/0002 ,  H01L2924/00

摘要： In at least one embodiment of the luminous means (1), the latter comprises at least one optoelectronic semiconductor device (2) which emits electromagnetic radiation during operation at at least one first wavelength (L1) and at least one second wavelength (L2), wherein the first wavelength (L1) and the second wavelength (L2) differ from one another and are below 500 nm, in particular between 200 nm and 500 nm. Furthermore, the luminous means (1) comprises at least one conversion means (3) which converts the first wavelength (L1) at least partly into radiation having a different frequency. The radiation spectrum emitted by the luminous means (1) during operation is metameric with respect to a black body spectrum. Such a luminous means makes it possible to choose the first wavelength and the second wavelength in such a way that a high color rendering quality and a high efficiency of the luminous means can be realized simultaneously.

摘要翻译： 在发光装置（1）的至少一个实施例中，后者包括在至少一个第一波长（L1）和至少一个第二波长（L2）的操作期间发射电磁辐射的至少一个光电半导体器件（2） 其中第一波长（L1）和第二波长（L2）彼此不同，并且低于500nm，特别是在200nm和500nm之间。 此外，发光装置（1）包括至少一个转换装置（3），其将第一波长（L1）至少部分转换成具有不同频率的辐射。 在运行期间由发光装置（1）发射的辐射光谱相对于黑体光谱是相同的。 这样的发光装置使得可以选择第一波长和第二波长，使得可以同时实现发光装置的高显色质量和高效率。

公开(公告)号：US20110042643A1

公开(公告)日：2011-02-24

申请号：US12680463

申请日：2008-09-12

申请人： Peter Stauss ,  Matthias Peter ,  Alexander Walter

发明人： Peter Stauss ,  Matthias Peter ,  Alexander Walter

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/3086 ,  H01S5/34 ,  H01L2924/00

摘要： An optoelectronic semiconductor chip is specified, which has an active zone (20) containing a multi quantum well structure provided for generating electromagnetic radiation, which comprises a plurality of successive quantum well layers (210, 220, 230). The multi quantum well structure comprises at least one first quantum well layer (210), which is n-conductively doped and which is arranged between two n-conductively doped barrier layers (250) adjoining the first quantum well layer. It comprises a second quantum well layer (220), which is undoped and is arranged between two barrier layers (250, 260) adjoining the second quantum well layer, of which one is n-conductively doped and the other is undoped. In addition, the multi quantum well structure comprises at least one third quantum well layer (230), which is undoped and which is arranged between two undoped barrier layers (260) adjoining the third quantum well layer.

摘要翻译： 规定了一种光电子半导体芯片，其具有包含多个量子阱结构的活动区域（20），所述有源区域包括多个连续量子阱层（210,220,230），所述有源区域包括用于产生电磁辐射的多量子阱结构。 多量子阱结构包括至少一个第一量子阱层（210），其被n导电掺杂并且布置在邻接第一量子阱层的两个n导电掺杂阻挡层（250）之间。 它包括未掺杂的第二量子阱层（220），并且被布置在邻接第二量子阱层的两个势垒层（250,260）之间，其中一个是n导电掺杂的，另一个是未掺杂的。 另外，多量子阱结构包括至少一个未掺杂的第三量子阱层（230），其布置在与第三量子阱层相邻的两个未掺杂的势垒层（260）之间。

公开(公告)号：US20080276869A1

公开(公告)日：2008-11-13

申请号：US12154897

申请日：2008-05-28

申请人： Stefan Bader ,  Matthias Peter ,  Alexander Walter ,  Volker Haerle

发明人： Stefan Bader ,  Matthias Peter ,  Alexander Walter ,  Volker Haerle

IPC分类号： C23C16/00

CPC分类号： C23C16/4581 ,  C23C16/4583 ,  C30B25/12

摘要： In order to achieve an as uniform as possible temperature over the entire surface of the substrate (2) during a temperature step and, in particular, during an epitaxy method, temperature equalization structures are incorporated in a substrate holder (1), on which the substrate (2) is located. A uniform temperature distribution on the substrate surface during the deposition of a semiconductor material reduces the emission wavelength gradient of the deposited semiconductor material. The temperature equalization structures produce specific temperature inhomogenelties in the substrate holder (1), and these smooth out the temperature profile of the substrate (2). For example, a groove (4) with a cooling effect and a support step (5) which produces a gap (8) between the substrate (2) and the substrate holder (1) are integrated in the edge area of the substrate holder (1).

摘要翻译： 为了在温度步骤期间，特别是在外延方法中，在衬底（2）的整个表面上实现尽可能均匀的温度，在衬底保持器（1）中并入温度均衡结构，其中 衬底（2）位于。 在沉积半导体材料期间在衬底表面上均匀的温度分布降低了沉积的半导体材料的发射波长梯度。 温度均衡结构在衬底保持器（1）中产生特定的温度不均匀性，并且这些平滑了衬底（2）的温度分布。 例如，具有冷却效果的槽（4）和在基板（2）和基板保持件（1）之间产生间隙（8）的支撑台阶（5）被集成在基板支架的边缘区域 1）。

公开(公告)号：US09202978B2

公开(公告)日：2015-12-01

申请号：US14114044

申请日：2012-04-26

申请人： Andreas Löffler ,  Christian Leirer ,  Rainer Butendeich ,  Tobias Meyer ,  Matthias Peter

发明人： Andreas Löffler ,  Christian Leirer ,  Rainer Butendeich ,  Tobias Meyer ,  Matthias Peter

IPC分类号： H01L29/24 ,  H01L33/26 ,  H01L33/02 ,  H01L33/14 ,  H01L33/24 ,  H01L33/32

CPC分类号： H01L33/26 ,  H01L33/025 ,  H01L33/14 ,  H01L33/24 ,  H01L33/32

摘要： A radiation-emitting semiconductor chip having a semiconductor layer sequence based on a nitride compound semiconductor material and having a pn junction includes a first protective layer having deliberately introduced crystal defects, a second protective layer having a higher doping than the first protective layer, wherein the first protective layer protects the semiconductor chip against electrostatic discharge pulses, an active zone that generates radiation disposed downstream of the first protective layer in a growth direction, wherein during operation of the semiconductor chip, a breakdown behavior of the semiconductor layer sequence in a reverse direction in regions having crystal defects differs from regions without crystal defects, and wherein in the event of electrostatic discharge pulses, electrical charge is dissipated in a homogeneously distributed manner via the regions having crystal defects.

摘要翻译： 具有基于氮化物半导体材料并具有pn结的半导体层序列的辐射发射半导体芯片包括具有有意引入的晶体缺陷的第一保护层，具有比第一保护层更高掺杂的第二保护层，其中， 第一保护层保护半导体芯片免受静电放电脉冲的影响，所述有源区域沿生长方向产生设置在第一保护层下游的辐射，其中在半导体芯片的操作期间半导体层序列沿相反方向的击穿行为 具有晶体缺陷的区域与没有晶体缺陷的区域不同，并且其中在静电放电脉冲的情况下，通过具有晶体缺陷的区域以均匀分布的方式散发电荷。

公开(公告)号：US08410507B2

公开(公告)日：2013-04-02

申请号：US13122779

申请日：2009-08-11

申请人： Peter Stauss ,  Reiner Windisch ,  Frank Baumann ,  Matthias Peter

发明人： Peter Stauss ,  Reiner Windisch ,  Frank Baumann ,  Matthias Peter

IPC分类号： H01L29/22 ,  H01L29/227 ,  H01L33/00

CPC分类号： H01L25/0753 ,  H01L33/08 ,  H01L33/50 ,  H01L2224/32225 ,  H01L2924/0002 ,  H01L2924/00

摘要： A luminous means (1) including at least one optoelectronic semiconductor device (2) which emits electromagnetic radiation during operation at at least one first wavelength (L1) and at at least one second wavelength (L2), wherein the first wavelength (L1) and the second wavelength (L2) differ from one another and are below 500 nm, in particular between 200 nm and 500 nm. Furthermore, the luminous means (1) includes at least one conversion means (3) which converts the first wavelength (L1) at least partly into radiation having a different frequency. The radiation spectrum emitted by the luminous means (1) during operation is metameric with respect to a black body spectrum. Such a luminous means makes it possible to choose the first wavelength and the second wavelength in such a way that a high color rendering quality and a high efficiency of the luminous means can be realized simultaneously.

摘要翻译： 一种发光装置（1），包括至少一个在至少一个第一波长（L1）和至少一个第二波长（L2）的操作期间发射电磁辐射的光电子半导体器件，其中第一波长（L1）和 第二波长（L2）彼此不同，低于500nm，特别是在200nm和500nm之间。 此外，发光装置（1）包括至少一个转换装置（3），其将第一波长（L1）至少部分地转换成具有不同频率的辐射。 在运行期间由发光装置（1）发射的辐射光谱相对于黑体光谱是相同的。 这样的发光装置使得可以选择第一波长和第二波长，使得可以同时实现发光装置的高显色质量和高效率。

公开(公告)号：US07998273B2

公开(公告)日：2011-08-16

申请号：US11913739

申请日：2006-05-05

申请人： Ferdinand Scholz ,  Peter Brückner ,  Frank Habel ,  Matthias Peter ,  Klaus Köhler

发明人： Ferdinand Scholz ,  Peter Brückner ,  Frank Habel ,  Matthias Peter ,  Klaus Köhler

IPC分类号： C30B21/02

CPC分类号： C30B29/406 ,  C30B25/02 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  Y10S117/915 ,  Y10T428/24355

摘要： An epitaxial growth process for producing a thick III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, is disclosed, wherein a thick III-N layer is deposited above a foreign substrate. The epitaxial growth process preferably is carried out by HVPE. The substrate can also be a template comprising the foreign substrate and at least one thin III-N intermediate layer. The surface quality is improved by providing a slight intentional misorientation of the substrate, and/or a reduction of the N/III ratio and/or the reactor pressure towards the end of the epitaxial growth process. Substrates and semiconductor devices with such improved III-N layers are also disclosed.

摘要翻译： 公开了用于生产厚III-N层的外延生长方法，其中III表示元素周期表第III族中的至少一种元素，其中在异物底物上方沉积厚的III-N层。 外延生长工艺优选通过HVPE进行。 衬底也可以是包含异质衬底和至少一个薄III-N中间层的模板。 通过提供衬底的轻微故意取向，和/或在外延生长过程结束时降低N / III比和/或反应器压力来改善表面质量。 还公开了具有这种改进的III-N层的衬底和半导体器件。

公开(公告)号：US20110019411A1

公开(公告)日：2011-01-27

申请号：US12863717

申请日：2009-01-26

申请人： Kirstin Petersen ,  Stefan Grötsch ,  Stephan Miller ,  Günter Spath ,  Norbert Linder ,  Dominik Eisert ,  Matthias Peter

发明人： Kirstin Petersen ,  Stefan Grötsch ,  Stephan Miller ,  Günter Spath ,  Norbert Linder ,  Dominik Eisert ,  Matthias Peter

IPC分类号： F21V9/00

CPC分类号： H04N9/3164 ,  F21K9/00 ,  H01L25/0753 ,  H01L33/44 ,  H01L33/50 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic module for emitting monochromatic radiation in the visible wavelength range is specified. The module has a plurality of light emitting diode chips which generate UV radiation. The UV radiation is converted into light in the visible range, for example, into green light, by a wavelength converter. The coupling-out of light from the module is optimized by the use of two selectively reflecting and transmitting filters. This module can be used as a light source in a projection apparatus.

摘要翻译： 规定用于发出可见波长范围的单色辐射的光电子模块。 该模块具有产生紫外线辐射的多个发光二极管芯片。 通过波长转换器将紫外线辐射转换成可见光范围内的光，例如绿光。 通过使用两个选择性反射和发射滤波器来优化来自模块的光耦合。 该模块可以用作投影设备中的光源。

公开(公告)号：US20110018106A1

公开(公告)日：2011-01-27

申请号：US12896352

申请日：2010-10-01

申请人： Ferdinand SCHOLZ ,  Peter Brückner ,  Frank Habel ,  Matthias Peter ,  Klaus Köhler

发明人： Ferdinand SCHOLZ ,  Peter Brückner ,  Frank Habel ,  Matthias Peter ,  Klaus Köhler

IPC分类号： H01L29/20 ,  B32B9/00

CPC分类号： C30B29/406 ,  C30B25/02 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  Y10S117/915 ,  Y10T428/24355

摘要： An epitaxial growth process for producing a thick III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, is disclosed, wherein a thick III-N layer is deposited above a foreign substrate. The epitaxial growth process preferably is carried out by HVPE. The substrate can also be a template comprising the foreign substrate and at least one thin III-N intermediate layer. The surface quality is improved by providing a slight intentional misorientation of the substrate, and/or a reduction of the N/III ratio and/or the reactor pressure towards the end of the epitaxial growth process. Substrates and semiconductor devices with such improved III-N layers are also disclosed.

摘要翻译： 公开了用于生产厚III-N层的外延生长方法，其中III表示元素周期表第III族中的至少一种元素，其中在异物底物上方沉积厚的III-N层。 外延生长工艺优选通过HVPE进行。 衬底也可以是包含异质衬底和至少一个薄III-N中间层的模板。 通过提供衬底的轻微故意取向，和/或在外延生长过程结束时降低N / III比和/或反应器压力来改善表面质量。 还公开了具有这种改进的III-N层的衬底和半导体器件。