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    UV AND REDUCING TREATMENT FOR K RECOVERY AND SURFACE CLEAN IN SEMICONDUCTOR PROCESSING
    31.
    发明申请
    UV AND REDUCING TREATMENT FOR K RECOVERY AND SURFACE CLEAN IN SEMICONDUCTOR PROCESSING 审中-公开
    用于半导体处理中的K回收和表面清洁的UV和还原处理

    公开(公告)号：US20110111533A1

    公开(公告)日：2011-05-12

    申请号：US12646830

    申请日：2009-12-23

    申请人： Bhadri Varadarajan ,  George A. Antonelli ,  Bart van Schravendijk

    发明人： Bhadri Varadarajan ,  George A. Antonelli ,  Bart van Schravendijk

    IPC分类号： H01L21/02 ,  B08B3/00

    CPC分类号： H01L21/67115 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76883

    摘要： Treatment of carbon-containing low-k dielectric with UV radiation and a reducing agent enables process-induced damage repair. Also, treatment with a reducing agent and UV radiation is effective to clean a processed wafer surface by removal of metal oxide (e.g., copper oxide) and/or organic residue of CMP slurry from the planarized surface of a processed wafer with or without low-k dielectric. The methods of the invention are particularly applicable in the context of damascene processing to recover lost low-k property of a dielectric damaged during processing, either pre-metalization, post-planarization, or both, and/or provide effective post-planarization surface cleaning to improve adhesion of subsequently applied dielectric barrier and/or other layers.

    摘要翻译： 用紫外线辐射和还原剂处理含碳低k电介质可以进行过程诱导的损伤修复。 此外，用还原剂和紫外线辐射进行处理有效地通过从具有或不具有低分子量的处理的晶片的平坦化表面除去金属氧化物（例如氧化铜）和/或CMP浆料的有机残余物来清洁经处理的晶片表面， k电介质。 本发明的方法特别适用于在镶嵌加工以恢复在加工期间损坏的电介质的损失的低k性质，即预金属化，后平面化或两者之中，和/或提供有效的后平面化表面清洁 以改善随后施加的介电阻挡层和/或其它层的粘合性。

    UV TREATMENT FOR CARBON-CONTAINING LOW-K DIELECTRIC REPAIR IN SEMICONDUCTOR PROCESSING
    32.
    发明申请
    UV TREATMENT FOR CARBON-CONTAINING LOW-K DIELECTRIC REPAIR IN SEMICONDUCTOR PROCESSING 审中-公开
    用于在半导体加工中含碳低K电介质修复的紫外线处理

    公开(公告)号：US20110045610A1

    公开(公告)日：2011-02-24

    申请号：US12940324

    申请日：2010-11-05

    申请人： Bart van Schravendijk ,  William Crew

    发明人： Bart van Schravendijk ,  William Crew

    IPC分类号： H01L21/26

    CPC分类号： H01L21/76814 ,  H01L21/3105 ,  H01L21/76825

    摘要： A method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric enables process-induced damage repair. The method is particularly applicable in the context of damascene processing. A method provides for forming a semiconductor device by depositing a carbon-containing low-k dielectric layer on a substrate and forming a trench in the low-k dielectric layer, the trench having sidewalls ending at a bottom. The trench is then exposed to UV radiation and, optionally a gas phase source of —CH3 groups, to repair damage to the carbon-containing low-k material of the trench sidewalls and bottom caused by the trench formation process (generally etching, ashing, and wet or dry cleaning). A similar treatment, with or without the gas phase source of —CH3 groups, may be applied to repair damage caused in a subsequent planarization operation.

    摘要翻译： 一种用于紫外线（UV）处理含碳低k电介质的方法可以进行过程诱导的损伤修复。 该方法特别适用于镶嵌加工的上下文。 一种方法提供了通过在衬底上沉积含碳的低k电介质层并在低k电介质层中形成沟槽来形成半导体器件，所述沟槽具有以底部结束的侧壁。 然后将沟槽暴露于UV辐射和任选的-CH 3基团的气相源，以修复由沟槽形成过程（通常为蚀刻，灰化）引起的沟槽侧壁和底部的含碳低k材料的损伤， 和湿或干洗）。 可以使用具有或不具有-CH 3基团的气相源的类似处理来修复在随后的平坦化操作中引起的损伤。

    APPARATUS FOR UV DAMAGE REPAIR OF LOW K FILMS PRIOR TO COPPER BARRIER DEPOSITION
    33.
    发明申请
    APPARATUS FOR UV DAMAGE REPAIR OF LOW K FILMS PRIOR TO COPPER BARRIER DEPOSITION 审中-公开
    在铜掩模沉积前的低K膜的紫外线损伤修复装置

    公开(公告)号：US20100267231A1

    公开(公告)日：2010-10-21

    申请号：US12726263

    申请日：2010-03-17

    申请人： Bart van Schravendijk ,  Victoria Shannon Benzing

    发明人： Bart van Schravendijk ,  Victoria Shannon Benzing

    IPC分类号： H01L21/768 ,  C23C16/06 ,  C23C14/34

    CPC分类号： H01L21/76814 ,  H01L21/3105 ,  H01L21/67115 ,  H01L21/76825 ,  H01L21/76826

    摘要： An apparatus and method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric enables process-induced damage repair. A semiconductor substrate processing system may be configured to include degas and plasma pre-clean modules, UV process modules, copper diffusion barrier deposition modules and copper seed deposition modules such that the substrate is held under vacuum and is not exposed to ambient air after low k damage repair and before copper barrier layer deposition. Inventive methods provide for treatment of a damaged low-k dielectric on a semiconductor substrate with UV radiation to repair processing induced damage and barrier layer deposition prior breaking vacuum.

    摘要翻译： 用于含碳低k电介质的紫外（UV）处理的装置和方法能够进行过程诱导的损伤修复。 半导体衬底处理系统可以被配置为包括脱气和等离子体预清洁模块，UV工艺模块，铜扩散阻挡沉积模块和铜种子沉积模块，使得衬底保持在真空下并且在低k之后不暴露于环境空气 损坏修复和铜屏障层沉积之前。 本发明的方法提供了用UV辐射处理半导体衬底上损坏的低k电介质，以在破坏真空之前修复处理引起的损伤和阻挡层沉积。

    Multistep method of depositing metal seed layers
    34.
    发明授权
    Multistep method of depositing metal seed layers 有权
    多步法沉积金属种子层

    公开(公告)号：US07682966B1

    公开(公告)日：2010-03-23

    申请号：US11701984

    申请日：2007-02-01

    申请人： Robert Rozbicki ,  Bart van Schravendijk ,  Tom Mountsier ,  Wen Wu

    发明人： Robert Rozbicki ,  Bart van Schravendijk ,  Tom Mountsier ,  Wen Wu

    IPC分类号： H01L23/535

    CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/5826 ,  C23C14/584 ,  H01L21/2855 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76873

    摘要： Metal seed layers are deposited on a semiconductor substrate having recessed features by a method that involves at least three operations. In this method, a first layer of metal is deposited onto the substrate to cover at least the bottom portions of the recessed features. The first layer of metal is subsequently redistributed to improve sidewall coverage of the recessed features. Next, a second layer of metal is deposited on at least the field region of the substrate and on the bottom portions of the recessed features. The method can be implemented using a PVD apparatus that allows deposition and resputtering operations. This sequence of operations can afford seed layers with improved step coverage. It also leads to decreased formation of voids in interconnects, and to improved resistance characteristics of formed IC devices.

    摘要翻译： 通过涉及至少三个操作的方法将金属种子层沉积在具有凹陷特征的半导体衬底上。 在该方法中，第一金属层沉积在基底上以至少覆盖凹陷特征的底部。 随后重新分布第一金属层以改善凹陷特征的侧壁覆盖。 接下来，在衬底的至少场区域和凹陷特征的底部上沉积第二层金属。 该方法可以使用允许沉积和重新溅射操作的PVD装置来实现。 这种操作顺序可以提供具有改进的台阶覆盖率的种子层。 它还导致互连中空隙的形成减少，并改善形成的IC器件的电阻特性。

    DEFECT REDUCTION IN PLASMA PROCESSING
    36.
    发明申请
    DEFECT REDUCTION IN PLASMA PROCESSING 审中-公开
    等离子体加工中的缺陷减少

    公开(公告)号：US20140049162A1

    公开(公告)日：2014-02-20

    申请号：US13586790

    申请日：2012-08-15

    申请人： George Thomas ,  Bart van Schravendijk ,  Harald Te Nijenhuis ,  Shawn Hamilton

    发明人： George Thomas ,  Bart van Schravendijk ,  Harald Te Nijenhuis ,  Shawn Hamilton ,  Konstantin Makhratchev

    IPC分类号： H05H1/24

    CPC分类号： H05H1/24 ,  C23C16/0245 ,  C23C16/50 ,  H01J37/32853 ,  H01J37/32871

    摘要： Methods and apparatus to reduce particle-induced defects on a substrate are provided. In certain embodiments, the methods involve decreasing plasma spread prior to extinguishing the plasma. The plasma is maintained at the decreased plasma spread while particles are evacuated from the processing chamber. In certain embodiments, the methods involve decreasing plasma power prior to extinguishing the plasma. The low-power plasma is maintained while particles are evacuated from the processing chamber.

    摘要翻译： 提供了减少基板上的颗粒引起的缺陷的方法和装置。 在某些实施方案中，所述方法涉及在扑灭血浆之前降低血浆扩散。 等离子体保持在降低的等离子体扩散，而颗粒从处理室抽空。 在某些实施例中，该方法包括在熄灭等离子体之前降低等离子体功率。 当从处理室排出颗粒时，保持低功率等离子体。

    HARDMASK MATERIALS
    39.
    发明申请
    HARDMASK MATERIALS 有权
    HARDMASK材料

    公开(公告)号：US20110133313A1

    公开(公告)日：2011-06-09

    申请号：US12631709

    申请日：2009-12-04

    申请人： Vishwanathan Rangarajan ,  Andrew Antonelli ,  Bart van Schravendijk

    发明人： Vishwanathan Rangarajan ,  Andrew Antonelli ,  Bart van Schravendijk

    IPC分类号： H01L21/31 ,  H01L21/306 ,  H01L29/06

    CPC分类号： H01L21/31144 ,  C23C16/30 ,  C23C16/325 ,  C23C16/34 ,  C23C16/505 ,  C23C16/56 ,  H01J37/32091 ,  H01J37/32165 ,  H01L21/02112 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/3148 ,  H01L21/318 ,  H01L21/32139 ,  H01L21/76813

    摘要： Hardmask films having high hardness and low stress are provided. In some embodiments a film has a stress of between about −600 MPa and 600 MPa and hardness of at least about 12 GPa. In some embodiments, a hardmask film is prepared by depositing multiple sub-layers of doped or undoped silicon carbide using multiple densifying plasma post-treatments in a PECVD process chamber. In some embodiments, a hardmask film includes a high-hardness boron-containing film selected from the group consisting of SixByCz, SixByNz, SixByCzNw, BxCy, and BxNy. In some embodiments, a hardmask film includes a germanium-rich GeNx material comprising at least about 60 atomic % of germanium. These hardmasks can be used in a number of back-end and front-end processing schemes in integrated circuit fabrication.

    摘要翻译： 提供具有高硬度和低应力的硬掩模薄膜。 在一些实施方案中，膜具有在约-600MPa和600MPa之间的应力以及至少约12GPa的硬度。 在一些实施例中，通过在PECVD处理室中使用多个致密等离子体后处理沉积多个掺杂或未掺杂碳化硅的子层来制备硬掩模膜。 在一些实施例中，硬掩模膜包括选自SixByCz，SixByNz，SixByCzNw，BxCy和BxNy的高硬度含硼膜。 在一些实施例中，硬掩模膜包括富含锗的GeN x材料，其包含至少约60原子％的锗。 这些硬掩模可用于集成电路制造中的许多后端和前端处理方案。

    UV TREATMENT FOR CARBON-CONTAINING LOW-K DIELECTRIC REPAIR IN SEMICONDUCTOR PROCESSING
    40.
    发明申请
    UV TREATMENT FOR CARBON-CONTAINING LOW-K DIELECTRIC REPAIR IN SEMICONDUCTOR PROCESSING 有权
    用于在半导体加工中含碳低K电介质修复的紫外线处理

    公开(公告)号：US20100261349A1

    公开(公告)日：2010-10-14

    申请号：US11590661

    申请日：2006-10-30

    申请人： Bart van Schravendijk ,  William Crew

    发明人： Bart van Schravendijk ,  William Crew

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76814 ,  H01L21/3105 ,  H01L21/76825

    摘要： A method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric enables process-induced damage repair. The method is particularly applicable in the context of damascene processing. A method provides for forming a semiconductor device by depositing a carbon-containing low-k dielectric layer on a substrate and forming a trench in the low-k dielectric layer, the trench having sidewalls ending at a bottom. The trench is then exposed to UV radiation and, optionally a gas phase source of —CH3 groups, to repair damage to the carbon-containing low-k material of the trench sidewalls and bottom caused by the trench formation process (generally etching, ashing, and wet or dry cleaning). A similar treatment, with or without the gas phase source of —CH3 groups, may be applied to repair damage caused in a subsequent planarization operation.

    摘要翻译： 一种用于紫外线（UV）处理含碳低k电介质的方法可以进行过程诱导的损伤修复。 该方法特别适用于镶嵌加工的上下文。 一种方法提供了通过在衬底上沉积含碳的低k电介质层并在低k电介质层中形成沟槽来形成半导体器件，所述沟槽具有以底部结束的侧壁。 然后将沟槽暴露于UV辐射和任选的-CH 3基团的气相源，以修复由沟槽形成过程（通常为蚀刻，灰化）引起的沟槽侧壁和底部的含碳低k材料的损伤， 和湿或干洗）。 可以使用具有或不具有-CH 3基团的气相源的类似处理来修复在随后的平坦化操作中引起的损伤。