公开(公告)号：US20180308822A1

公开(公告)日：2018-10-25

申请号：US15634012

申请日：2017-06-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Prayudi Lianto ,  Guan Huei See ,  Arvind Sundarrajan ,  Ranga Rao Arnepalli ,  Prerna Goradia

IPC: H01L23/00 ,  H01L21/56 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/48

Abstract: A fan-out process using chemical mechanical planarization (CMP) reduces the step-height between a semiconductor die and the surrounding overmolding of a reconstituted wafer. The reconstituted wafer is formed by overmolding a back side of at least one die that is placed with an active side facing down. The reconstituted wafer is then oriented to expose the die and the active side. A polymer layer is then formed over the reconstituted wafer. A CMP process then removes a portion of the polymer layer until a certain thickness above the die surface is obtained, reducing the step-height between the polymer layer on top of the die surface and the polymer layer on the adjacent mold compound surface. The CMP process can also be performed after a subsequent redistribution layer is formed on the reconstituted wafer.

公开(公告)号：US09978639B2

公开(公告)日：2018-05-22

申请号：US15335721

申请日：2016-10-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Siew Kit Hoi ,  Arvind Sundarrajan ,  Jiao Song

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/285 ,  H01L21/67 ,  H01J37/32 ,  C23C14/34 ,  C23C14/16

CPC classification number: H01L21/76865 ,  C23C14/046 ,  C23C14/165 ,  C23C14/34 ,  H01J37/32009 ,  H01J37/321 ,  H01J37/32339 ,  H01J37/3244 ,  H01L21/2855 ,  H01L21/67069 ,  H01L21/76862 ,  H01L21/76871 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/5329

Abstract: Methods for forming layers on a substrate having a feature are provided herein. In some embodiments, a method for forming layers on a substrate having a features may include depositing a copper layer within the feature, wherein a thickness of the copper layer disposed on upper corners of an opening of the feature and on an upper portion of a sidewall proximate the upper corners of the feature is greater than the thickness of the copper layer disposed on a lower portion of a sidewall of the feature proximate a bottom of the feature; and exposing the substrate to a plasma formed from a process gas comprising hydrogen (H2) gas to selectively etch the copper layer proximate the upper corners of the opening and the upper portion of the sidewall proximate the upper corners, without substantially etching the copper layer proximate the lower portion of the sidewall proximate the bottom of the feature.

公开(公告)号：US09922874B2

公开(公告)日：2018-03-20

申请号：US15200836

申请日：2016-07-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Prayudi Lianto ,  Sam Lee ,  Charles Sharbono ,  Marvin Louis Bernt ,  Guan Huei See ,  Arvind Sundarrajan

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L21/76879 ,  H01L21/76804 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329

Abstract: A method of processing a semiconductor substrate includes: immersing a substrate in a first bath, wherein the substrate comprises a barrier layer, a conductive seed layer, and a patterned photoresist layer defining an opening; providing a first electric current between the conductive seed layer and a first anode disposed in electrical contact with the first bath to deposit a conductive material within the opening; stripping the patterned photoresist layer; immersing the substrate in a second bath; providing a second electric current that is a reverse of the first electric current between the conductive seed layer plus the conductive material and a second anode disposed in electrical contact with the second bath; etching the conductive seed layer from atop a field region of the barrier layer; and etching the barrier layer from atop a field region of the substrate.

公开(公告)号：US09362111B2

公开(公告)日：2016-06-07

申请号：US14609129

申请日：2015-01-29

Applicant: Applied Materials, Inc.

Inventor： Zongbin Wang ,  Shalina Deepa Sudheeran ,  Arvind Sundarrajan ,  Bharat Bhushan

IPC: H01L21/44 ,  H01L21/4763 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/02 ,  H01L21/768 ,  H01L21/306 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01L21/02274 ,  C23C16/045 ,  C23C16/402 ,  C23C16/4554 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/32577 ,  H01L21/02164 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/0228 ,  H01L21/30625 ,  H01L21/3065 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76877 ,  H01L21/76898

Abstract: Implementations described herein generally relate to methods for forming dielectric films in high aspect ratio features. In one implementation, a method for forming a silicon oxide layer is provided. A silicon-containing precursor gas is flown into a processing chamber having a substrate having a high aspect ratio feature disposed therein. Then a high frequency plasma is applied to the silicon-containing precursor gas to deposit a silicon-containing layer over the surface of the high aspect ratio feature. The processing chamber is purged to remove by-products from the silicon-containing layer deposition process. An oxygen-containing precursor gas is flown into the processing chamber. A high frequency plasma and a low frequency plasma are applied to the oxygen-containing precursor gas to form the silicon oxide layer.

Abstract translation: 本文描述的实施方案通常涉及用于形成高纵横比特征的介电膜的方法。 在一个实施方案中，提供了形成氧化硅层的方法。 将含硅前体气体流入具有设置在其中的具有高纵横比特征的基板的处理室。 然后将高频等离子体施加到含硅前体气体上以在高纵横比特征的表面上沉积含硅层。 净化处理室以除去含硅层沉积工艺中的副产物。 含氧前体气体流入处理室。 将高频等离子体和低频等离子体施加到含氧前体气体上以形成氧化硅层。

公开(公告)号：US12020992B2

公开(公告)日：2024-06-25

申请号：US17584669

申请日：2022-01-26

Applicant: Applied Materials, Inc. ,  NATIONAL UNIVERSITY OF SINGAPORE

Inventor： Prayudi Lianto ,  Guan Huei See ,  Arvind Sundarrajan ,  Muhammad Avicenna Naradipa ,  Andrivo Rusydi

IPC: H01L21/66 ,  G01N13/00 ,  H01L23/00

CPC classification number: H01L22/12 ,  G01N13/00 ,  H01L24/80 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: Methods and apparatus for processing a first substrate and a second substrate are provided herein. For example, a method of processing a substrate using extended spectroscopic ellipsometry (ESE) includes directing a beam from an extended spectroscopic ellipsometer toward a first surface of a first substrate and a second surface of a second substrate, which is different than the first substrate, determining in-situ ESE data from each of the first surface and the second surface during processing of the first substrate and the second substrate, measuring a change of phase and amplitude in determined in-situ ESE data, and determining one or more parameters of the first surface of the first substrate and the second surface of the second substrate using simultaneously complex dielectric function, optical conductivity, and electronic correlations from the measured change of phase and amplitude in the in-situ ESE data.

公开(公告)号：US11302549B2

公开(公告)日：2022-04-12

申请号：US16432590

申请日：2019-06-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Sriskantharajah Thirunavukarasu ,  Eng Sheng Peh ,  Srinivas D. Nemani ,  Arvind Sundarrajan ,  Avinash Avula ,  Ellie Y. Yieh

IPC: H01L21/673 ,  H01L21/67 ,  H01L21/677

Abstract: Embodiments of substrate transfer apparatus are provided herein. In some embodiments, an apparatus for storing and transporting at least one substrate in a vacuum includes a carrying case for storing one or more substrates, wherein the carrying case includes a vacuum port and a plurality of holders to hold one or more substrates within an inner volume of the carrying case; and a vacuum source in fluid connection with the carrying case via the vacuum port.

公开(公告)号：US11177146B2

公开(公告)日：2021-11-16

申请号：US16670138

申请日：2019-10-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Qi Jie Peng ,  Chin Wei Tan ,  Jun-Liang Su ,  Fang Jie Lim ,  Sriskantharajah Thirunavukarasu ,  Arvind Sundarrajan ,  Puay Han Tan

IPC: H01L21/62 ,  H01L21/67 ,  H01L21/66 ,  H01L21/683

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a system for processing a substrate includes a process chamber comprising a first processing volume and a second processing volume; a first heating device configured to heat a substrate to a first temperature; a carrier configured to support the substrate while the substrate is being heated using the first heating device to the first temperature and transfer the substrate to and from each of the first processing volume and the second processing volume; a second heating device configured to maintain the substrate at or near the first temperature; and a chuck configured to receive the substrate from the carrier, and comprising an outer zone and an inner zone having independent variable pressure control to apply a chucking force at the outer zone that is different from a chucking force provided at the inner zone.

公开(公告)号：US20210233707A1

公开(公告)日：2021-07-29

申请号：US17227332

申请日：2021-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： Peng Suo ,  Yu Gu ,  Guan Huei See ,  Arvind Sundarrajan

IPC: H01F41/04 ,  H01F17/00 ,  H01F27/28 ,  H01L21/48 ,  H01L23/498 ,  H01L49/02

Abstract: A method of forming a magnetic core on a substrate having a stacked inductor coil includes etching a plurality of polymer layers to form at least one feature through the plurality of polymer layers, wherein the at least one feature is disposed within a central region of a stacked inductor coil formed on the substrate; and depositing a magnetic material within the at least one feature.

公开(公告)号：US20210134627A1

公开(公告)日：2021-05-06

申请号：US16670138

申请日：2019-10-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Qi Jie Peng ,  Chin Wei Tan ,  Jun-Liang Su ,  Fang Jie Lim ,  Sriskantharajah Thirunavukarasu ,  Arvind Sundarrajan ,  Puay Han Tan

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/66

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a system for processing a substrate includes a process chamber comprising a first processing volume and a second processing volume; a first heating device configured to heat a substrate to a first temperature; a carrier configured to support the substrate while the substrate is being heated using the first heating device to the first temperature and transfer the substrate to and from each of the first processing volume and the second processing volume; a second heating device configured to maintain the substrate at or near the first temperature; and a chuck configured to receive the substrate from the carrier, and comprising an outer zone and an inner zone having independent variable pressure control to apply a chucking force at the outer zone that is different from a chucking force provided at the inner zone.

公开(公告)号：US10549324B2

公开(公告)日：2020-02-04

申请号：US15974000

申请日：2018-05-08

Applicant: APPLIED MATERIALS, INC.

Inventor： Sriskantharajah Thirunavukarasu ,  Jen Sern Lew ,  Arvind Sundarrajan ,  Srinivas Nemani

IPC: H01L21/67 ,  B08B5/02 ,  B08B6/00 ,  H01L21/683

Abstract: Embodiments of methods and apparatus for removing particles from a surface of a substrate, such as from the backside of the substrate, are provided herein. In some embodiments, an apparatus for removing particles from a surface of a substrate includes: a substrate handler to expose the surface of the substrate; a particle separator to separate particles from the exposed surface of the substrate; a particle transporter to transport the separated particles; and a particle collector to collect the transported particles.