公开(公告)号：US20140134351A1

公开(公告)日：2014-05-15

申请号：US13968197

申请日：2013-08-15

Applicant: Applied Materials, Inc.

Inventor： Tae Hong Ha ,  Sang Ho Yu ,  Kiejin Park

IPC: C23C16/505

CPC classification number: C23C16/46 ,  C23C16/0281 ,  C23C16/16 ,  C23C16/18 ,  C23C16/505 ,  C23C16/513 ,  C23C28/322 ,  C23C28/34 ,  H01L21/28556 ,  H01L21/76841 ,  H01L21/76873 ,  H01L2221/1089

Abstract: Methods for depositing ruthenium by a PECVD process are described herein. Methods for depositing ruthenium can include positioning a substrate in a processing chamber, the substrate having a barrier layer formed thereon, heating and maintaining the substrate at a first temperature, flowing a first deposition gas into a processing chamber, the first deposition gas comprising a ruthenium containing precursor, generating a plasma from the first deposition gas to deposit a first ruthenium layer over the barrier layer, flowing a second deposition gas into the processing chamber to deposit a second ruthenium layer over the first ruthenium layer, the second deposition gas comprising a ruthenium containing precursor, depositing a copper seed layer over the second ruthenium layer and annealing the substrate at a second temperature.

Abstract translation: 本文描述了通过PECVD工艺沉积钌的方法。 用于沉积钌的方法可以包括将衬底定位在处理室中，所述衬底具有形成在其上的阻挡层，将衬底加热并保持在第一温度，使第一沉积气体流入处理室，第一沉积气体包括钌 从所述第一沉积气体产生等离子体以在所述阻挡层上沉积第一钌层，将第二沉积气体流入所述处理室以在所述第一钌层上沉积第二钌层，所述第二沉积气体包含钌 在第二钌层上沉积铜籽晶层并在第二温度下退火衬底。

公开(公告)号：US20230025937A1

公开(公告)日：2023-01-26

申请号：US17955996

申请日：2022-09-29

Applicant: Applied Materials, Inc.

Inventor： Yixiong Yang ,  Wei V. Tang ,  Seshadri Ganguli ,  Sang Ho Yu ,  Feng Q. Liu ,  Jeffrey W. Anthis ,  David Thompson ,  Jacqueline S. Wrench ,  Naomi Yoshida

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/18 ,  H01L23/532 ,  C23C16/04

Abstract: Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.

公开(公告)号：US11488830B2

公开(公告)日：2022-11-01

申请号：US16549756

申请日：2019-08-23

Applicant: Applied Materials, Inc.

Inventor： Yixiong Yang ,  Wei V. Tang ,  Seshadri Ganguli ,  Sang Ho Yu ,  Feng Q. Liu ,  Jeffrey W. Anthis ,  David Thompson ,  Jacqueline S. Wrench ,  Naomi Yoshida

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/18 ,  H01L23/532 ,  C23C16/04

Abstract: Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.

公开(公告)号：US20210317570A1

公开(公告)日：2021-10-14

申请号：US16848113

申请日：2020-04-14

Applicant: Applied Materials, Inc.

Inventor： Byunghoon Yoon ,  Wei Lei ,  Sang Ho Yu

IPC: C23C16/18 ,  C23C16/505

Abstract: Methods for selectively depositing on surfaces are disclosed. Some embodiments of the disclosure utilize an organometallic precursor that is substantially free of halogen and substantially free of oxygen. Deposition is performed to selectively deposit a metal film on a non-metallic surface over a metallic surface. Some embodiments of the disclosure relate to methods of gap filling.

公开(公告)号：US10790287B2

公开(公告)日：2020-09-29

申请号：US16204300

申请日：2018-11-29

Applicant: Applied Materials, Inc.

Inventor： Sung-Kwan Kang ,  Gill Yong Lee ,  Sang Ho Yu ,  Shih Chung Chen ,  Jeffrey W. Anthis

IPC: H01L27/108 ,  H01L29/49 ,  H01L29/423 ,  H01L21/28 ,  H01L21/321 ,  H01L21/02 ,  H01L21/3213

Abstract: Memory devices and methods of forming memory devices are described. The memory devices comprise two work-function metal layers, where one work-function layer has a lower work-function than the other work-function layer. The low work-function layer may reduce gate-induced drain leakage current losses. Methods of forming memory devices are also described.

公开(公告)号：US10699946B2

公开(公告)日：2020-06-30

申请号：US15364780

申请日：2016-11-30

Applicant: Applied Materials, Inc.

Inventor： Bhushan N. Zope ,  Avgerinos V. Gelatos ,  Bo Zheng ,  Yu Lei ,  Xinyu Fu ,  Srinivas Gandikota ,  Sang Ho Yu ,  Mathew Abraham

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/18 ,  H01L23/532

Abstract: Methods for depositing a metal layer in a feature definition of a semiconductor device are provided. In one implementation, a method for depositing a metal layer for forming a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a metal layer on a substrate and annealing the metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the metal layer on the substrate, exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process until a predetermined thickness of the metal layer is achieved.

公开(公告)号：US20200176451A1

公开(公告)日：2020-06-04

申请号：US16204300

申请日：2018-11-29

Applicant: Applied Materials, Inc.

Inventor： Sung-Kwan Kang ,  Gill Yong Lee ,  Sang Ho Yu ,  Shih Chung Chen ,  Jeffrey W. Anthis

IPC: H01L27/108 ,  H01L29/49 ,  H01L21/3213 ,  H01L29/423 ,  H01L21/28

Abstract: Memory devices and methods of forming memory devices are described. The memory devices comprise two work-function metal layers, where one work-function layer has a lower work-function than the other work-function layer. The low work-function layer may reduce gate-induced drain leakage current losses. Methods of forming memory devices are also described.

公开(公告)号：US20200063263A1

公开(公告)日：2020-02-27

申请号：US16549756

申请日：2019-08-23

Applicant: Applied Materials, Inc.

Inventor： Yixiong Yang ,  Wei V. Tang ,  Seshadri Ganguli ,  Sang Ho Yu ,  Feng Q. Liu ,  Jeffrey W. Anthis ,  David Thompson ,  Jacqueline S. Wrench ,  Naomi Yoshida

IPC: C23C16/455 ,  C23C16/18 ,  H01L21/285 ,  H01L23/532

Abstract: Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.

公开(公告)号：US20190390340A1

公开(公告)日：2019-12-26

申请号：US16448449

申请日：2019-06-21

Applicant: Applied Materials, Inc

Inventor： Sang Ho Yu ,  Seshadri Ganguli ,  Byunghoon Yoon ,  Wei Min Chen

IPC: C23C16/455 ,  C23C16/06

Abstract: Methods of depositing a metal film with high purity are discussed. Some embodiments utilize a thermal ALD process comprising an alkyl halide and a metal precursor. Some embodiments selectively deposit a metal film with high purity on a metal surface over a dielectric surface. Some embodiments selectively deposit a metal film with high purity on a dielectric surface over a metal surface. Some embodiments deposit a metal film with greater than 99% metal atoms on an atomic basis.

公开(公告)号：US20190385838A1

公开(公告)日：2019-12-19

申请号：US16551398

申请日：2019-08-26

Applicant: Applied Materials, Inc.

Inventor： Kai Wu ,  Vikash Banthia ,  Sang Ho Yu ,  Mei Chang ,  Feiyue Ma

IPC: H01L21/02 ,  H01L21/285 ,  H01L21/768

Abstract: Methods to selectively deposit a film on a first surface (e.g., a metal surface) relative to a second surface (e.g., a dielectric surface) by exposing the surface to a pre-clean plasma comprising one or more of argon or hydrogen followed by deposition. The first surface and the second surface can be substantially coplanar. The selectivity of the deposited film may be increased by an order of magnitude relative to the substrate before exposure to the pre-cleaning plasma.