公开(公告)号：US11791136B2

公开(公告)日：2023-10-17

申请号：US17240695

申请日：2021-04-26

Applicant: Applied Materials, Inc.

Inventor： Sanjeev Baluja ,  Yi Yang ,  Truong Nguyen ,  Nattaworn Boss Nunta ,  Joseph F. Aubuchon ,  Tuan Anh Nguyen ,  Karthik Janakiraman

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/40 ,  C23C16/50 ,  C23C16/52 ,  C23C16/44 ,  C23C16/509

CPC classification number: H01J37/32449 ,  C23C16/401 ,  C23C16/4401 ,  C23C16/4557 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32522 ,  C23C16/45574 ,  H01J2237/3321 ,  H01J2237/3323

Abstract: In one embodiment, at least a processing chamber includes a perforated lid, a gas blocker disposed on the perforated lid, and a substrate support disposed below the perforated lid. The gas blocker includes a gas manifold, a central gas channel formed in the gas manifold, a first gas distribution plate comprising an inner and outer trenches surrounding the central gas channel, a first and second gas channels formed in the gas manifold, the first gas channel is in fluid communication with a first gas source and the inner trench, and the second gas channel is in fluid communication with the first gas source and the outer trench, a second gas distribution plate, a third gas distribution plate disposed below the second gas distribution plate, and a plurality of pass-through channels disposed between the second gas distribution plate and the third gas distribution plate. The second gas distribution plate includes a plurality of through holes formed through a bottom of the second gas distribution plate, a central opening in fluid communication with the central gas channel, and a recess region formed in a top surface of the second gas distribution plate, and the recess region surrounds the central opening.

公开(公告)号：US11746417B2

公开(公告)日：2023-09-05

申请号：US17948323

申请日：2022-09-20

Applicant: Applied Materials, Inc.

Inventor： Ashutosh Agarwal ,  Sanjeev Baluja

IPC: C23C16/40 ,  C23C16/455 ,  H01J37/32

CPC classification number: C23C16/45544 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32357

Abstract: Gas distribution apparatus, processing chambers and methods using a dead volume-free valve are described. The valve has a first inlet line with upstream and downstream ends and a second inlet line with a downstream end that connects to the first inlet line. A sealing surface at the downstream end of the second inlet line separates the first inlet line from the second inlet line preventing fluid communication between the first inlet line and the second inlet line.

公开(公告)号：US20230207345A1

公开(公告)日：2023-06-29

申请号：US17561085

申请日：2021-12-23

Applicant: Applied Materials, Inc.

Inventor： Muhannad Mustafa ,  Mario D. Silvetti ,  Michael Jerry Duret ,  Sanjeev Baluja ,  Satish Radhakrishnan ,  Yuan Xiaoxiong

IPC: H01L21/67 ,  B23Q1/03

CPC classification number: H01L21/67103 ,  B23Q1/032

Abstract: Embodiments of the disclosure advantageously provide base plates with decreased metal contamination. Some embodiments of the disclosure advantageously provide base plates with increased edge purge channel uniformity. Some embodiments provide methods of forming base plates. Embodiments of the disclose are directed to a heater pedestal configured to support a substrate during processing. In some embodiments, the heater pedestal includes the base plate described herein.

公开(公告)号：US20230175131A1

公开(公告)日：2023-06-08

申请号：US18103812

申请日：2023-01-31

Applicant: Applied Materials, Inc.

Inventor： Akshay Gunaji ,  Uday Pai ,  Timothy J. Roggenbuck ,  Sanjeev Baluja ,  Kalesh Panchaxari Karadi ,  Tejas Ulavi

IPC: H05K5/02 ,  H02G3/04 ,  C23C16/458 ,  C23C16/455

CPC classification number: H05K5/0247 ,  H02G3/0437 ,  C23C16/4588 ,  C23C16/45544 ,  C23C16/4586

Abstract: Process assemblies and cable management assemblies for managing cables in tight envelopes. A processing assembly includes a top chamber having at least one substrate support, a support shaft, a robot spindle assembly, a stator and a a cable management system. The cable management system includes an inner trough assembly and an outer trough assembly configured to move relative to one another, and a plurality of chain links configured to house at least one cable for delivering power to the process assembly.

公开(公告)号：US11599069B1

公开(公告)日：2023-03-07

申请号：US17467020

申请日：2021-09-03

Applicant: Applied Materials, Inc.

Inventor： Mauro Cimino ,  Arkaprava Dan ,  Sanjeev Baluja

IPC: G05B13/02 ,  H01L21/67

Abstract: Embodiments disclosed herein include a method for auto-tuning a system. In an embodiment, the method comprises determining if the system is in a steady state. Thereafter, the method includes exciting the system. In an embodiment, the method comprises storing process feedback measurements from the excited system to provide a set of stored data. In an embodiment, the set of stored data is a subset of all available data generated by the excited system. In an embodiment, the method further comprises determining when the excited system returns to the steady state, and tuning the system using the set of stored data.

公开(公告)号：US20220068674A1

公开(公告)日：2022-03-03

申请号：US17008588

申请日：2020-08-31

Applicant: Applied Materials, Inc.

Inventor： Akshay Gunaji ,  Tejas Ulavi ,  Sanjeev Baluja

IPC: H01L21/67 ,  F27D5/00 ,  H05B3/22 ,  H01L21/687 ,  C23C16/455 ,  C23C16/46

Abstract: A heater assembly having a top seal and a second seal configured to account for deviation in processing heights and motor runoff of a heater standoff. The top seal is positioned between a shield plate and a top plate and the bottom seal is positioned between a heater mounting base and the heater standoff.

公开(公告)号：US11220747B2

公开(公告)日：2022-01-11

申请号：US16658396

申请日：2019-10-21

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Michael Rice ,  Arkaprava Dan ,  Hanhong Chen

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/46 ,  H01L21/02 ,  H01L21/687 ,  H01J37/32 ,  H01L21/67 ,  H01L21/677

Abstract: Apparatus and methods to process one or more wafers are described. A first processing station has a first gas flow pattern from one or more of a first gas diffuser, a first cooling channel pattern, or a first heater. A second processing station has a second gas flow pattern from one or more of a second gas diffuser, a second cooling channel pattern, or a second heater. The second gas diffuser, the second cooling channel pattern, or the second heater is rotated or translated relative to the first gas diffuser, the first cooling channel pattern, or the first heater to provide the second gas flow pattern complementary to the first gas flow pattern.

公开(公告)号：US20210292898A1

公开(公告)日：2021-09-23

申请号：US17204428

申请日：2021-03-17

Applicant: Applied Materials, Inc.

Inventor： Sanjeev Baluja ,  Tejas Ulavi ,  Ashutosh Agarwal

IPC: C23C16/458 ,  C23C16/44 ,  C23C16/52

Abstract: Apparatus and methods for providing backside pressure control and edge purge gas to a substrate in a processing chamber. A support region of a substrate support is defined by an outer band. The support region comprises one or more openings in the top surface of the substrate support. The outer band comprises a plurality of spaced apart posts. Processing chambers, methods of processing a substrate and non-transitory computer-readable medium containing instructions to process a substrate are also disclosed.

公开(公告)号：US11047043B2

公开(公告)日：2021-06-29

申请号：US16687399

申请日：2019-11-18

Applicant: Applied Materials, Inc.

Inventor： Sanjeev Baluja ,  Ren-Guan Duan ,  Kalyanjit Ghosh

IPC: C23C16/44 ,  C23C16/455

Abstract: Embodiments disclosed herein generally relate to a chamber liner for the high temperature processing of substrates in a processing chamber. The processing chamber utilizes an inert bottom purge flow to shield the substrate support from halogen reactants such that the substrate support may be heated to temperatures greater than about 650 degrees Celsius. The chamber liner controls a flow profile such that during deposition the bottom purge flow restricts reactants and by-products from depositing below the substrate support. During a clean process, the bottom purge flow restricts halogen reactants from contacting the substrate support. As such, the chamber liner includes a conical inner surface angled inwardly to direct purge gases around an edge of the substrate support and to reduce deposition under the substrate support and the on the edge.

公开(公告)号：US10787739B2

公开(公告)日：2020-09-29

申请号：US16658393

申请日：2019-10-21

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Dhritiman Subha Kashyap ,  Jared Ahmad Lee ,  Tejas Ulavi ,  Michael Rice

IPC: C23C16/455 ,  C23C16/458 ,  H01L21/67

Abstract: Apparatus and methods to process one or more wafers are described. A processing chamber comprises a first processing station comprising a first gas injector having a first face, a first emissivity and a first temperature, a second processing station comprising a second gas injector having a second face, a second emissivity and a second temperature, and a substrate support assembly comprising a plurality of substantially coplanar support surfaces, the substrate support assembly configured to move the support surfaces between the first processing station and the second processing station. When a wafer is on the support surfaces, a temperature skew of less than about 0.5° C. is developed upon moving the wafer between the stations in about 0.5 seconds.