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    Methods for depositing films comprising cobalt and cobalt nitrides
    31.
    发明授权
    Methods for depositing films comprising cobalt and cobalt nitrides 有权
    用于沉积包含钴和钴的氮化物的膜的方法

    公开(公告)号：US09005704B2

    公开(公告)日：2015-04-14

    申请号：US14198776

    申请日：2014-03-06

    Applicant: Applied Materials, Inc.

    Inventor： David Thompson ,  Jeffrey W. Anthis ,  David Knapp ,  Benjamin Schmiege

    IPC: C23C16/14 ,  C23C16/34 ,  H05H1/24 ,  C23C16/42 ,  C23C16/18 ,  C23C16/455

    CPC classification number: C23C16/42 ,  C23C16/18 ,  C23C16/34 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/76843

    Abstract: Cobalt-containing films, as well as methods for providing the cobalt-containing films. Certain methods pertain to exposing a substrate surface to a precursor and a co-reactant to provide a cobalt-containing film, the first precursor having a structure represented by: wherein each R is independently C1-C6 substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics, L is a coordinating ligand comprising a Lewis base.

    Abstract translation: 含钴膜，以及提供含钴膜的方法。 某些方法涉及将底物表面暴露于前体和共反应物以提供含钴膜，第一前体具有由以下表示的结构：其中每个R独立地为C 1 -C 6取代或未取代的烷烃，支链或 支链烷烃，取代或未取代的烯烃，支链或非支链烯烃，取代或未取代的炔烃，支链或非支链炔烃或取代或未取代的芳烃，L是包含路易斯碱的配位配体。

    In-Situ Formation of Non-Volatile Lanthanide Thin Film Precursors and Use in ALD and CVD
    35.
    发明申请
    In-Situ Formation of Non-Volatile Lanthanide Thin Film Precursors and Use in ALD and CVD 审中-公开

    公开(公告)号：US20180366322A1

    公开(公告)日：2018-12-20

    申请号：US16013884

    申请日：2018-06-20

    Applicant: Applied Materials, Inc.

    Inventor： Benjamin Schmiege ,  Jeffrey W. Anthis ,  David Thompson

    IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455

    Abstract: Methods of forming a lanthanide-containing film comprising exposing a substrate surface to a lanthanide-containing precursor, a metal halide and a nitrogen precursor are described. The lanthanide-containing precursor has the general formula (CpRx)2Ln(N,N-dialkylamidinate) where Cp is a cyclopentadienyl or 6, 7 or 8 membered ring, R is H, C1-C4 alkyl, x=1 to number of C in Cp, alkyl is C1 to C4 alkyl. The metal halide deposits metal halide on the substrate surface and reacts with lanthanide-containing species to convert the lanthanide-containing species to a lanthanide halide. The nitrogen-containing precursor forms a lanthanide-metal-nitride film on the substrate surface.

    Methods Of Etching Films Comprising Transition Metals
    39.
    发明申请
    Methods Of Etching Films Comprising Transition Metals 审中-公开
    包含过渡金属的蚀刻膜的方法

    公开(公告)号：US20160293449A1

    公开(公告)日：2016-10-06

    申请号：US15177726

    申请日：2016-06-09

    Applicant: Applied Materials, Inc.

    Inventor： Jeffrey W. Anthis ,  Benjamin Schmiege ,  David Thompson

    IPC: H01L21/3213 ,  C23F1/12 ,  H01J37/32

    CPC classification number: H01L21/32136 ,  C23F1/00 ,  C23F1/12 ,  C23F4/00 ,  H01J37/32715 ,  H01J37/32862 ,  H01L21/32135

    Abstract: Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising two or more of a layer of Co, a layer of Cu and a layer of Ni.

    Abstract translation: 提供了用于蚀刻包含过渡金属的膜的方法。 某些方法包括激活包含至少一种过渡金属的基底表面，其中基底表面的活化包括将基底表面暴露于加热，等离子体，氧化环境或卤化物转移剂以提供活化的基底表面; 以及将活化的底物表面暴露于包含路易斯碱或pi酸的试剂中，以提供包含一个或多个与试剂配位的一个或多个配体配位的过渡金属原子的气相配位络合物。 某些其它方法提供了选自多层衬底的选择性蚀刻，所述多层衬底包括Co层，Cu层和Ni层中的两层或多层。

    Selectively etching metals and metal nitrides conformally
    40.
    发明授权
    Selectively etching metals and metal nitrides conformally 有权
    选择性地蚀刻金属和金属氮化物

    公开(公告)号：US09449843B1

    公开(公告)日：2016-09-20

    申请号：US14734222

    申请日：2015-06-09

    Applicant: Applied Materials, Inc.

    Inventor： Mikhail Korolik ,  Nitin K. Ingle ,  David Thompson ,  Jeffrey W. Anthis ,  David Knapp ,  Benjamin Schmiege

    IPC: H01L21/3213

    CPC classification number: H01L21/32135 ,  C23F1/12

    Abstract: Methods of selectively etching metals and metal nitrides from the surface of a substrate are described. The etch selectively removes metals and metal nitrides relative to silicon-containing layers such as silicon, polysilicon, silicon oxide, silicon germanium, silicon carbide, silicon carbon nitride and/or silicon nitride. The etch removes material in a conformal manner by including an oxidation operation which creates a thin uniform metal oxide. The thin uniform metal oxide is then removed by exposing the metal oxide to a metal-halogen precursor in a substrate processing region. The metal oxide may be removed to completion and the etch may stop once the uniform metal oxide layer is removed. Etches described herein may be used to uniformly trim back material on high aspect ratio features which ordinarily show higher etch rates near the opening of a gap compared to deep within the gap.

    Abstract translation: 描述了从衬底的表面选择性地蚀刻金属和金属氮化物的方法。 蚀刻相对于诸如硅，多晶硅，氧化硅，硅锗，碳化硅，氮化硅和/或氮化硅的含硅层选择性地去除金属和金属氮化物。 蚀刻通过包括产生薄的均匀金属氧化物的氧化操作以保形方式去除材料。 然后通过在基板处理区域中将金属氧化物暴露于金属卤素前体而除去薄的均匀金属氧化物。 金属氧化物可以被去除完成，并且一旦去除均匀的金属氧化物层就可能停止蚀刻。 本文所述的蚀刻可用于在高纵横比特征上均匀地修整材料，该特征通常在与间隙内的深度相比间隙开口附近显示更高的蚀刻速率。

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