公开(公告)号：US06900938B2

公开(公告)日：2005-05-31

申请号：US10016812

申请日：2001-11-30

Applicant: Bin Zhao

Inventor： Bin Zhao

IPC: G02B6/34 ,  G02B5/30

CPC classification number: G02B6/29302 ,  G02B6/272 ,  G02B6/2766 ,  G02B6/2773 ,  G02B6/29386

Abstract: An apparatus for channel interleaving comprises a spatial birefringent device assembly and a reflector which is configured so as to direct light from the spatial birefringent device assembly back through the spatial birefringent device assembly. The spatial birefringent device assembly comprises at least one spatial birefringent device. Directing light from the spatial birefringent device assembly back through the spatial birefringent device assembly substantially mitigates cross-talk and/or dispersion of the apparatus for channel interleaving in communications.

Abstract translation: 用于信道交织的装置包括空间双折射器件组件和反射器，其被配置为将空间双折射器件组件的光引导回空间双折射器件组件。 空间双折射装置组件包括至少一个空间双折射装置。 通过空间双折射器件组件将来自空间双折射器件组件的光引导回来，基本上减轻了通信中用于信道交织的设备的串扰和/或分散。

公开(公告)号：US06731430B2

公开(公告)日：2004-05-04

申请号：US09876484

申请日：2001-06-07

Applicant: Bin Zhao

Inventor： Bin Zhao

IPC: G02B530

CPC classification number: G02B27/288

Abstract: A filter for filtering electromagnetic radiation has two polarization selection elements and a birefringent element assembly disposed intermediate polarization selection elements. The birefringent element assembly is configured so as to optimize contributions of a fundamental and at least one odd harmonic of a transmission vs. wavelength curve in a manner which enhances transmission vs. wavelength curve stopband depth and passband flatness, so as to enhance performance and mitigate cross-talk.

Abstract translation: 用于滤波电磁辐射的滤波器具有两个偏振选择元件和设置在偏振选择元件之间的双折射元件组件。 双折射元件组件被配置为以增强透射与波长曲线阻带深度和通带平坦度的方式优化透射与波长曲线的基波和至少一个奇次谐波的贡献，从而增强性能并减轻 相声。

公开(公告)号：US06445073B1

公开(公告)日：2002-09-03

申请号：US09002326

申请日：1998-01-02

Applicant: Bin Zhao

Inventor： Bin Zhao

IPC: H01L2940

CPC classification number: H01L21/7681 ,  H01L21/76807 ,  H01L21/7684 ,  H01L2221/1036

Abstract: A semiconductor process and structure is provided for use in single or dual damascene metallization processes. A thin metal layer which serves as an etch stop and masking layer is deposited upon a first dielectric layer. Then, a second dielectric layer is deposited upon the thin metallization masking layer. The thin metallization masking layer provides an etch stop to form the bottom of the in-laid conductor grooves. In a dual damascene process, the thin metallization masking layer leaves open the via regions. Thus, the conductor grooves above the metallization masking layer and the via regions may be etched in the first and second dielectric in one step. In a single damascene process, the thin metallization etch masking layer may cover the via regions. The etch stop and masking layer can be formed from any conductive or non-conductive materials whose chemical, mechanical, thermal and electrical properties are compatible with the process and circuit performance.

Abstract translation: 提供半导体工艺和结构用于单镶嵌金属化或双镶嵌金属化工艺。 用作蚀刻停止和掩蔽层的薄金属层沉积在第一介电层上。 然后，在薄金属化掩模层上沉积第二介电层。 薄金属化掩模层提供蚀刻停止以形成嵌入式导体槽的底部。 在双镶嵌工艺中，薄的金属化掩模层离开通孔区域。 因此，金属化掩模层和通孔区域之上的导体沟槽可以在一个步骤中在第一和第二电介质中蚀刻。 在单个镶嵌工艺中，薄金属化蚀刻掩模层可以覆盖通孔区域。 蚀刻停止和掩蔽层可以由其化学，机械，热和电特性与工艺和电路性能兼容的任何导电或非导电材料形成。

公开(公告)号：US06309922B1

公开(公告)日：2001-10-30

申请号：US09627505

申请日：2000-07-28

Applicant: Q. Z. Liu ,  Bin Zhao ,  David Howard

Inventor： Q. Z. Liu ,  Bin Zhao ,  David Howard

IPC: H01L218234

CPC classification number: H01L28/10 ,  H01L27/08

Abstract: Method for fabrication of on-chip inductors and related structure are disclosed. According to one embodiment, inductors are formed by patterning conductors within a certain dielectric layer in a semiconductor die. Thereafter, the entire dielectric layer in the semiconductor die is subjected to a blanket implantation or sputtering of high permeability material. According to another embodiment, a first area in a semiconductor die is covered, for example, with photoresist. A second area in the semiconductor die includes a patterned conductor which is to be used as an inductor. The patterned conductor is also covered, for example, with photoresist. The second area, excluding the covered patterned conductor is subjected to implantation or sputtering of high permeability material. According to yet another embodiment, a first area of a semiconductor die is covered, for example, with photoresist. A second area in the semiconductor area includes a patterned conductor which is to be used as an inductor. This second area, including the patterned conductor, is subjected to implantation or sputtering of high permeability material. The implantation or sputtering of high permeability materials result in the inductors having much higher inductance values than they would otherwise have.

Abstract translation: 公开了片上电感器的制造方法和相关结构。 根据一个实施例，电感器通过在半导体管芯内的某个介电层内图案化导体而形成。 此后，对半导体管芯中的整个电介质层进行高导磁率材料的覆盖注入或溅射。 根据另一实施例，半导体管芯中的第一区域例如被光致抗蚀剂覆盖。 半导体管芯中的第二区域包括用作电感器的图案化导体。 图案化的导体也例如用光致抗蚀剂覆盖。 不包括覆盖图案导体的第二区域经受高磁导率材料的注入或溅射。 根据另一个实施例，半导体管芯的第一区域例如被光致抗蚀剂覆盖。 半导体区域中的第二区域包括用作电感器的图案化导体。 包括图案化导体的该第二区域经受高磁导率材料的注入或溅射。 高磁导率材料的注入或溅射导致电感器的电感值高于原来的电感值。

公开(公告)号：US6037664A

公开(公告)日：2000-03-14

申请号：US52215

申请日：1998-03-31

Applicant: Bin Zhao ,  Prahalad K. Vasudev ,  Ronald S. Horwath ,  Thomas E. Seidel ,  Peter M. Zeitzoff

Inventor： Bin Zhao ,  Prahalad K. Vasudev ,  Ronald S. Horwath ,  Thomas E. Seidel ,  Peter M. Zeitzoff

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48

CPC classification number: H01L21/76849 ,  H01L21/7681 ,  H01L21/76843 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10S438/902

Abstract: A technique for fabricating a dual damascene interconnect structure using a low dielectric constant material as a dielectric layer or layers. A low dielectric constant (low-.epsilon.) dielectric material is used to form an inter-level dielectric (ILD) layer between metallization layers and in which via and trench openings are formed in the low-.epsilon. ILD. The dual damascene technique allows for both the via and trench openings to be filled at the same time.

Abstract translation: 一种使用低介电常数材料作为电介质层或多层制造双镶嵌互连结构的技术。 使用低介电常数（低ε）电介质材料在金属化层之间形成层间介电层（ILD）层，其中在低εILD中形成通孔和沟槽开口。 双镶嵌技术允许通孔和沟槽开口同时被填充。

公开(公告)号：US5891513A

公开(公告)日：1999-04-06

申请号：US587262

申请日：1996-01-16

Applicant: Valery M. Dubin ,  Yosef Shacham-Diamand ,  Chiu H. Ting ,  Bin Zhao ,  Prahalad K. Vasudev

Inventor： Valery M. Dubin ,  Yosef Shacham-Diamand ,  Chiu H. Ting ,  Bin Zhao ,  Prahalad K. Vasudev

IPC: C23C18/16 ,  H01L21/288 ,  H01L21/768 ,  H01L23/532 ,  H05K3/04 ,  H05K3/38 ,  H05K3/42 ,  H05K3/46 ,  B05D5/12

CPC classification number: H01L21/76843 ,  C23C18/1603 ,  C23C18/1651 ,  C23C18/1689 ,  C23C18/1831 ,  C23C18/1879 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76807 ,  H01L21/76874 ,  H01L21/76877 ,  H01L23/53238 ,  H05K3/388 ,  H05K3/465 ,  H01L2924/0002 ,  H05K2201/09563 ,  H05K2203/072 ,  H05K2203/0733 ,  H05K3/045 ,  H05K3/422 ,  H05K3/4661 ,  Y10S977/892

Abstract: A method of utilizing electroless copper deposition to form interconnects on a semiconductor wafer. Once a via or a trench is formed in a dielectric layer, a titanium nitride (TiN) or tantalum (Ta) barrier layer is blanket deposited. Then, a contact displacement technique is used to form a thin activation seed layer of copper on the barrier layer. An electroless deposition technique is then used to auto-catalytically deposit copper on the activated barrier layer. The electroless copper deposition continues until the via/trench is filled. Subsequently, the surface is polished by an application of chemical-mechanical polishing (CMP) to remove excess copper and barrier material from the surface, so that the only copper and barrier material remaining are in the via/trench openings. Then an overlying silicon nitride (SiN) layer is formed above the exposed copper in order to form a dielectric barrier layer. The copper interconnect is fully encapsulated from the adjacent material by the TiN (or Ta) and the SiN layers.

Abstract translation: 一种利用无电铜沉积在半导体晶片上形成互连的方法。 一旦在电介质层中形成通孔或沟槽，则氮化钛（TiN）或钽（Ta）阻挡层被覆盖沉积。 然后，使用接触位移技术在阻挡层上形成铜的薄的活化种子层。 然后使用无电沉积技术在活化的阻挡层上自动催化沉积铜。 继续进行化学镀铜沉积，直到通孔/沟槽被填充。 随后，通过施加化学机械抛光（CMP）来抛光表面以从表面去除多余的铜和阻挡材料，使得剩余的唯一的铜和阻挡材料在通孔/沟槽开口中。 然后，在暴露的铜上方形成覆盖氮化硅（SiN）层，以形成电介质阻挡层。 铜互连通过TiN（或Ta）和SiN层从相邻材料完全封装。

公开(公告)号：US5830805A

公开(公告)日：1998-11-03

申请号：US751631

申请日：1996-11-18

Applicant: Yosi Shacham-Diamand ,  Valery M. Dubin ,  Chiu H. Ting ,  Bin Zhao ,  Prahalad K. Vasudev

Inventor： Yosi Shacham-Diamand ,  Valery M. Dubin ,  Chiu H. Ting ,  Bin Zhao ,  Prahalad K. Vasudev

IPC: C23C18/16 ,  H01L21/288 ,  H01L21/44

CPC classification number: C23C18/1683 ,  H01L21/288 ,  C23C18/1619 ,  Y10S438/908 ,  Y10S438/913

Abstract: An electroless deposition apparatus and a method of electroless deposition that uses a single process chamber for performing multiple processes by moving through the process chamber a variety of fluids one at a time in a sequential order.

Abstract translation: 一种无电沉积装置和无电沉积方法，其使用单个处理室通过以顺序顺序一次一个地通过处理室移动各种流体来执行多个处理。

公开(公告)号：US10097925B2

公开(公告)日：2018-10-09

申请号：US15417208

申请日：2017-01-26

Applicant: Xun Di ,  Lipeng Ma ,  Ping Liang ,  Bin Zhao ,  Xudong Yan

Inventor： Xun Di ,  Lipeng Ma ,  Ping Liang ,  Bin Zhao ,  Xudong Yan

IPC: H04R7/12 ,  B32B3/28 ,  B32B5/12 ,  B32B37/06 ,  B32B37/10 ,  B32B38/18 ,  H04R31/00 ,  B29C70/00

Abstract: The present disclosure disclose a diaphragm dome, the diaphragm dome includes a first carbon fiber layer and a second carbon fiber layer which are alternatively arranged by stacking, the first carbon fiber layer and the second carbon fiber layer are respectively a single-layer structure formed by an one-way extended carbon fiber bundle, an extending direction of the carbon fiber bundle of the first carbon fiber layer is perpendicular to an extending direction of the carbon fiber bundle of the second carbon fiber layer, and a thickness difference exists between the first carbon fiber layer and the second carbon fiber layer. In the diaphragm dome provided by the present disclosure, the material has larger specific strength, thus can reduce the thickness of the diaphragm dome, the carbon fiber layers of the diaphragm dome are well adhered, which is not readily layered, and has good water resistance.

公开(公告)号：US09917756B2

公开(公告)日：2018-03-13

申请号：US14500968

申请日：2014-09-29

Applicant: Bin Zhao ,  Jonathan Li

Inventor： Bin Zhao ,  Jonathan Li

IPC: H04M3/56 ,  H04M3/432 ,  H04L12/26 ,  H04W4/16 ,  H04L29/06 ,  H04L12/18 ,  H04L12/24 ,  H04L12/721 ,  H04L12/925 ,  H04M3/22 ,  H04M7/00 ,  H04L12/58 ,  H04L12/841 ,  H04M1/253 ,  H04M1/725

CPC classification number: H04L43/0864 ,  H04L12/18 ,  H04L12/1827 ,  H04L12/1831 ,  H04L41/5038 ,  H04L43/045 ,  H04L43/062 ,  H04L43/0852 ,  H04L43/10 ,  H04L43/50 ,  H04L45/123 ,  H04L47/283 ,  H04L47/722 ,  H04L51/34 ,  H04L65/1066 ,  H04L65/4038 ,  H04M1/2535 ,  H04M1/72547 ,  H04M3/2236 ,  H04M3/432 ,  H04M3/563 ,  H04M3/565 ,  H04M7/0084 ,  H04M2250/62 ,  H04M2250/74 ,  H04W4/16

Abstract: Systems and methods for a readiness dialog box for a call over network (CON) are provided. In some embodiments, the readiness dialog box is presented to the callers prior to the onset of the call. It presents the other participant's and their status. For example, it may indicate which participants are online, but not yet ready, those who are ready, and those not available. It also enables the caller to send messages (both preconfigured and customized) to the other participants. Once sufficient participants have joined, the call may start. Sufficiency of participants could include a quorum of individuals, may require that specific participants are ready, everyone is ready, or may be time dependent. The participant requirements may be configured by the individual setting up the call based upon call type.

公开(公告)号：US20170048600A1

公开(公告)日：2017-02-16

申请号：US15082304

申请日：2016-03-28

Applicant: Xiaofeng Pu ,  Qun Xiang ,  Xudong Yan ,  Bin Zhao ,  Sheng Ye

Inventor： Xiaofeng Pu ,  Qun Xiang ,  Xudong Yan ,  Bin Zhao ,  Sheng Ye

IPC: H04R1/02 ,  H04R1/32

CPC classification number: H04R1/023 ,  H04R1/2811 ,  H04R31/00 ,  H04R2499/11

Abstract: A sound generating device is provided in the present disclosure. The sound generating device includes a shell providing a receiving cavity, a sound generating body received in the receiving cavity and assembled to the shell, sound absorbing material filled in the receiving cavity, and an isolating member attached on the sound generating body. The sound generating body includes at least one air hole, and the isolating member covers the at least one air hole, the isolating member is configured for isolating the sound absorbing material from entering the sound generating body. The present disclosure further provides a method for making a sound generating device.

Abstract translation: 本发明提供一种发声装置。 声音发生装置包括提供接收腔的外壳，容纳在接收腔中并组装到外壳上的声音发生体，填充在接收腔中的吸声材料以及附着在发声体上的隔离构件。 发声体包括至少一个气孔，隔离构件覆盖至少一个气孔，该隔离构件用于隔离吸音材料以进入发声体。 本公开还提供了一种用于制造声音产生装置的方法。