公开(公告)号：US07113427B1

公开(公告)日：2006-09-26

申请号：US11076711

申请日：2005-03-09

Applicant: Yuri Mirgorodski ,  Peter J. Hopper ,  Vladislav Vashchenko ,  Philipp Lindorfer

Inventor： Yuri Mirgorodski ,  Peter J. Hopper ,  Vladislav Vashchenko ,  Philipp Lindorfer

IPC: G11C16/04

CPC classification number: G11C11/5628 ,  G11C16/12 ,  G11C16/3459 ,  H01L27/115 ,  H01L29/7881

Abstract: NVM cell for storing three levels of charge: one erased and two programmed states. The cell comprises a transistor structure providing a gate current versus gate voltage curve having a shape with a flat region or a second peak. To provide such a structure, one embodiment combines two parallel transistors having different threshold voltages, and another embodiment uses one transistor with variable doping. The gate current curve provides two programming zones. Programming the first state includes applying a voltage across a channel, ramping up a gate voltage in the first programming zone, followed by ramping it back down. Programming the second state comprises applying a voltage across a channel, ramping up a gate voltage past the first programming zone and into the second programming zone, followed by ramping it back down. Ramping the voltage back down may optionally be preceded by turning off the voltage across the channel.

Abstract translation: 用于存储三个电荷电平的NVM单元：一个擦除和两个编程状态。 该单元包括提供具有平坦区域或第二峰值的形状的栅极电流对栅极电压曲线的晶体管结构。 为了提供这样的结构，一个实施例组合了具有不同阈值电压的两个并联晶体管，另一实施例使用一个具有可变掺杂的晶体管 栅极电流曲线提供两个编程区域。 对第一状态进行编程包括在一个通道上施加电压，使第一个编程区中的栅极电压升高，然后将其向下斜坡。 对第二状态进行编程包括在通道上施加电压，将栅极电压升高到第一编程区并进入第二编程区，然后将其向下斜坡。 可以选择先将电压降低，然后关闭通道上的电压。

公开(公告)号：US07057174B1

公开(公告)日：2006-06-06

申请号：US10355904

申请日：2003-01-30

Applicant: Peter J. Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Michael Mian

Inventor： Peter J. Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Michael Mian

IPC: H01L31/00

CPC classification number: H01L31/08

Abstract: A photon detector capable of detecting gigahertz frequency optical signals utilizes a layer of photonic material that is formed adjacent to the coil of an inductor. When a pulsed light source is applied to the layer of photonic material, the photonic material generates eddy currents that alter the magnetic flux of the inductor. The signals can then be detected by detecting the change in the magnetic flux.

Abstract translation: 能够检测千兆赫兹光信号的光子检测器利用与电感线圈相邻形成的光子材料层。 当脉冲光源被施加到光子材料层时，光子材料产生改变电感器的磁通量的涡流。 然后可以通过检测磁通量的变化来检测信号。

公开(公告)号：US06972995B1

公开(公告)日：2005-12-06

申请号：US10821391

申请日：2004-04-09

Applicant: Peter J. Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Wendy Greig

Inventor： Peter J. Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Wendy Greig

IPC: G11C16/04 ,  G11C16/10 ,  G11C27/00

CPC classification number: G11C27/005 ,  G11C16/10

Abstract: The image capture period of an imaging cell, or the total time that an imaging cell is exposed to light energy, is substantially increased by utilizing a non-volatile memory (NVM), such as an electrically-erasable, programmable, read-only-memory (EEPROM) structure. The NVM structure stores and integrates charges that are proportional to the absorbed photons over a large number of sequential integration periods.

Abstract translation: 成像单元的图像捕获周期或成像单元暴露于光能的总时间通过利用诸如电可擦除可编程的只读存储器之类的非易失性存储器（NVM）而显着增加， 存储器（EEPROM）结构。 NVM结构在大量的顺序集成周期内存储和积分与吸收的光子成比例的电荷。

公开(公告)号：US06972457B1

公开(公告)日：2005-12-06

申请号：US10821286

申请日：2004-04-09

Applicant: Peter J. Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Robert Drury

Inventor： Peter J. Hopper ,  Philipp Lindorfer ,  Vladislav Vashchenko ,  Robert Drury

IPC: H01L21/8247 ,  H01L27/115 ,  H01L27/146 ,  H01L29/76 ,  H01L29/788

CPC classification number: H01L27/11526 ,  H01L27/115 ,  H01L27/11531 ,  H01L27/14603 ,  H01L27/14609

Abstract: The integration period of an imaging cell, or the time that an imaging cell is exposed to light energy, is substantially increased by utilizing a single-poly, electrically-programmable, read-only-memory (EPROM) structure to capture the light energy. Photogenerated electrons are formed in the channel region of the EPROM structure from the light energy. The photogenerated electrons are then accelerated into having ionizing collisions which, in turn, leads to electrons being injected onto the floating gate of the EPROM structure at a rate that is proportionate to the number of photons captured by the channel region.

Abstract translation: 成像单元的积分周期或成像单元暴露于光能的时间通过利用单聚电子可编程只读存储器（EPROM）结构捕获光能而大大增加。 光能从EPROM结构的沟道区形成光电子。 光生成的电子然后被加速成具有电离碰撞，其进而导致电子以与通道区域捕获的光子数成正比的速率注入到EPROM结构的浮动栅极上。

公开(公告)号：US06838711B1

公开(公告)日：2005-01-04

申请号：US10658432

申请日：2003-09-08

Applicant: Peter J. Hopper ,  Philipp Lindorfer ,  Vludislav Vashchenko ,  Rob Drury

Inventor： Peter J. Hopper ,  Philipp Lindorfer ,  Vludislav Vashchenko ,  Rob Drury

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H01L27/10

CPC classification number: H01L29/4238 ,  H01L29/0692 ,  H01L29/78

Abstract: In a MOS array, current loss at distances further away from the drain and source contacts is compensated for by adjusting the length of the polygate. In an array with drain and source contacts near the middle of the structure, the length of the polygate tapers off along the width of the polygate towards both ends of the polygate.

Abstract translation: 在MOS阵列中，通过调整多晶硅栅极的长度来补偿远离漏极和源极触点的距离处的电流损耗。 在具有靠近结构中间的漏极和源极触点的阵列中，多晶硅栅极的长度沿着多晶硅的宽度朝着多晶硅的两端逐渐变细。

公开(公告)号：US09201124B2

公开(公告)日：2015-12-01

申请号：US13182510

申请日：2011-07-14

Applicant: Philipp Lindorfer ,  Peter J. Hopper ,  William French ,  Paul Mawson ,  Steven Hunt ,  Roozbeh Parsa

Inventor： Philipp Lindorfer ,  Peter J. Hopper ,  William French ,  Paul Mawson ,  Steven Hunt ,  Roozbeh Parsa

IPC: G01R33/02 ,  G01R33/032 ,  G01J1/44 ,  G01J5/20 ,  G01J1/42 ,  H01S5/026 ,  H01S5/183

CPC classification number: G01R33/0052 ,  G01J1/4228 ,  G01J1/44 ,  G01J5/20 ,  G01R33/032 ,  H01L31/18 ,  H01L43/12 ,  H01L2224/04105 ,  H01L2224/18 ,  H01L2224/19 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/92244 ,  H01L2924/15153 ,  H01S5/0208 ,  H01S5/0222 ,  H01S5/026 ,  H01S5/0261 ,  H01S5/0262 ,  H01S5/183

Abstract: The cost and size of an atomic magnetometer are reduced by attaching together a first die which integrates together a vapor cell, top and side photo detectors, and processing electronics, a second die which integrates together an optics package and a heater for the vapor cell, and a third die which integrates together a VCSEL, a heater for the VCSEL, and control electronics.

Abstract translation: 原子磁强计的成本和尺寸通过将集成在一起的蒸气单元，顶部和侧面光电检测器以及处理电子器件的第一模具连接在一起来降低，第二模具将光学组件和用于蒸气室的加热器集成在一起， 以及将VCSEL，VCSEL的加热器和控制电子器件集成在一起的第三管芯。

公开(公告)号：US08836327B2

公开(公告)日：2014-09-16

申请号：US13314097

申请日：2011-12-07

Applicant: William French ,  Philipp Lindorfer ,  Peter J. Hopper ,  Roozbeh Parsa ,  Andrew James West ,  Byron Jon Roderick Shulver

Inventor： William French ,  Philipp Lindorfer ,  Peter J. Hopper ,  Roozbeh Parsa ,  Andrew James West ,  Byron Jon Roderick Shulver

IPC: G01R33/02

CPC classification number: G01R33/032 ,  H01L24/16 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/014 ,  H01L2924/00

Abstract: The cost and size of an atomic magnetometer are reduced by attaching a vapor cell structure that has a vapor cell cavity to a base die that has a laser light source that outputs light to the vapor cell cavity, and attaching a photo detection die that has a photodiode to the vapor cell structure to detect light from the laser light source that passes through the vapor cell cavity.

Abstract translation: 原子磁力计的成本和尺寸通过将具有蒸汽单元空腔的蒸汽单元结构附接到具有将光输出到蒸气腔空腔的激光源的基座上而被降低，以及附接具有 光电二极管到蒸汽池结构以检测来自通过蒸气室腔的激光源的光。

公开(公告)号：US20110118607A1

公开(公告)日：2011-05-19

申请号：US12621719

申请日：2009-11-19

Applicant: Peter J. Hopper ,  Philipp Lindorfer ,  William French ,  Visvamohan Yegnashankaran

Inventor： Peter J. Hopper ,  Philipp Lindorfer ,  William French ,  Visvamohan Yegnashankaran

IPC: A61B8/14 ,  G06F19/00 ,  B62D57/00 ,  A61B1/04

CPC classification number: A61B1/041 ,  A61B1/00082 ,  A61B1/00156 ,  A61B1/005 ,  A61B1/31 ,  A61B8/12 ,  A61B8/429 ,  A61B8/4472

Abstract: A self-propelled robotic device moves through bodily and other passageways by inflating regions of an overlying bladder along the length of the robotic device in a sequence that imparts motion to the device. The regions of the overlying bladder are inflated by energizing a plurality of coils, which are surrounded by a ferrofluid, in a sequence. The ferrofluid responds to the magnetic field created by an energized coil by creating a bulge in the side wall of the overlying bladder.

Abstract translation: 自动推进的机器人装置通过身体和其他通道沿着机器人装置的长度沿着向装置施加运动的顺序使覆盖的膀胱的区域膨胀而移动。 通过对由铁磁流体包围的多个线圈进行顺序地激励上覆的气囊的区域来充气。 铁磁流体通过在上覆气囊的侧壁中产生凸起来响应由通电线圈产生的磁场。

公开(公告)号：US07875955B1

公开(公告)日：2011-01-25

申请号：US11713921

申请日：2007-03-05

Applicant: Peter J. Hopper ,  Peter Johnson ,  Kyuwoon Hwang ,  Philipp Lindorfer

Inventor： Peter J. Hopper ,  Peter Johnson ,  Kyuwoon Hwang ,  Philipp Lindorfer

IPC: H01L27/08

CPC classification number: H01L23/5227 ,  H01F17/0006 ,  H01F17/02 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: An on-chip inductor structure for a DC-DC power regulator circuit merges the switching transistor metallization with the inductor. Thick top level conductor metal that is used to strap the transistor array and to lower its on-state resistance is also used to extend the power inductor into the transistor array. Thus, the structure includes three basic components: a power inductor that spirals around the transistor array, the transistor array itself, and the transistor array metallization that is used to form a distributed inductance situated over the transistor array.

Abstract translation: 用于DC-DC功率调节器电路的片上电感器结构将开关晶体管金属化与电感器并入。 用于绑定晶体管阵列并降低其导通电阻的厚顶级导体金属也用于将功率电感器扩展到晶体管阵列中。 因此，该结构包括三个基本部件：围绕晶体管阵列螺旋的功率电感器，晶体管阵列本身以及用于形成位于晶体管阵列上方的分布式电感器的晶体管阵列金属化。

公开(公告)号：US07217966B1

公开(公告)日：2007-05-15

申请号：US11060877

申请日：2005-02-18

Applicant: Vladislav Vashchenko ,  Peter J. Hopper ,  Philipp Lindorfer

Inventor： Vladislav Vashchenko ,  Peter J. Hopper ,  Philipp Lindorfer

IPC: H01L27/10 ,  H01L29/739 ,  H01L29/73 ,  H01L29/74

CPC classification number: H01L27/0266 ,  H01L29/78

Abstract: A transistor array is self-protected from an electrostatic discharge (ESD) event which can cause localized ESD damage by integrating an ESD protection device into the transistor array. The ESD protection device operates as a transistor during normal operating conditions, and provides a low-resistance current path during an ESD event.

Abstract translation: 晶体管阵列可以通过将ESD保护器件集成到晶体管阵列中而免受静电放电（ESD）事件的影响，从而导致局部ESD损坏。 ESD保护装置在正常操作条件下作为晶体管工作，并且在ESD事件期间提供低电阻电流路径。