公开(公告)号：US20200050106A1

公开(公告)日：2020-02-13

申请号：US16655447

申请日：2019-10-17

Applicant: FUJIFILM Corporation

Inventor： Michihiro SHIRAKAWA ,  Hajime FURUTANI ,  Mitsuhiro FUJITA ,  Tomotaka TSUCHIMURA ,  Takashi KAWASHIMA ,  Michihiro OGAWA ,  Akihiro KANEKO ,  Hironori OKA ,  Yasuharu SHIRAISHI

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/20

Abstract: A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Conditions 1 and 2, Condition 1: The A value determined by Formula (1) is 0.14 or more, A=([H]×0.04+[C]×1.0+[N]×2.1+[O]×3.6+[F]×5.6+[S]×1.5+[I]×39.5)/([H]×1+[C]×12+[N]×14+[O]×16+[F]×19+[S]×32+[I]×127)  Formula (1): Condition 2: The concentration of the solid content in the photosensitive composition for EUV light is 2.5% by mass or less.

公开(公告)号：US20180292751A1

公开(公告)日：2018-10-11

申请号：US16007421

申请日：2018-06-13

Applicant: FUJIFILM Corporation

Inventor： Daisuke ASAKAWA ,  Akiyoshi GOTO ,  Yasunori YONEKUTA ,  Naoya HATAKEYAMA ,  Michihiro SHIRAKAWA ,  Keiyu OU

IPC: G03F7/038 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  C08F220/16 ,  C08F220/28 ,  C08F220/36 ,  C08F220/38 ,  C08F220/34 ,  C08F230/08 ,  G03F7/039

Abstract: The present invention has an object to provide an actinic ray-sensitive or radiation-sensitive resin composition having excellent collapse performance, an actinic ray-sensitive or radiation-sensitive film formed using the composition, a pattern forming method using the composition, and a method for manufacturing an electronic device, including the pattern forming method. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention is an actinic ray-sensitive or radiation-sensitive resin composition containing a resin whose solubility with respect to a developer changes by the action of an acid, in which the resin includes a repeating unit derived from a monomer having at least one of a lactone structure or an amide structure, and the dissolution parameter of the monomer is 24.0 or more.

公开(公告)号：US20180081277A1

公开(公告)日：2018-03-22

申请号：US15823593

申请日：2017-11-28

Applicant: FUJIFILM Corporation

Inventor： Naoki INOUE ,  Naohiro TANGO ,  Kei YAMAMOTO ,  Michihiro SHIRAKAWA ,  Akiyoshi GOTO

IPC: G03F7/32 ,  G03F7/11

CPC classification number: G03F7/32 ,  G03F7/091 ,  G03F7/11 ,  G03F7/325

Abstract: Provided are a pattern forming method including a step of applying a composition for forming an upper layer film, containing a resin having a C log P(Poly) of 3.0 or more and at least one compound selected from the group consisting of (A1) to (A4) described in the specification onto a resist film to form an upper layer film, a step of exposing the resist film, and a step of developing the exposed resist film with a developer including an organic solvent; a resist pattern formed by the pattern forming method; a method for manufacturing an electronic device, including the pattern forming method; and the composition for forming an upper layer film.

公开(公告)号：US20170184970A1

公开(公告)日：2017-06-29

申请号：US15461586

申请日：2017-03-17

Applicant: FUJIFILM Corporation

Inventor： Akiyoshi GOTO ,  Naoki INOUE ,  Kei YAMAMOTO ,  Naohiro TANGO ,  Michihiro SHIRAKAWA

IPC: G03F7/11 ,  C09D133/14 ,  C08F220/18 ,  C08F220/28 ,  G03F7/40 ,  G03F7/09 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  C09D133/08 ,  G03F7/004

Abstract: Provided are a pattern forming method capable of providing good DOF, EL, and watermark defect performance, a resist pattern formed by the pattern forming method, a composition for forming an upper layer film, used in the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to forming a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer including an organic solvent to form a pattern, in which a receding contact angle of water on a surface of the upper layer film is 80° or more.

公开(公告)号：US20170176862A1

公开(公告)日：2017-06-22

申请号：US15446695

申请日：2017-03-01

Applicant: FUJIFILM Corporation

Inventor： Naoki INOUE ,  Naohiro TANGO ,  Kei YAMAMOTO ,  Michihiro SHIRAKAWA ,  Akiyoshi GOTO

IPC: G03F7/11 ,  G03F7/16 ,  G03F7/09 ,  G03F7/039 ,  G03F7/38 ,  G03F7/32 ,  G03F7/40 ,  G03F7/038 ,  C09D133/08 ,  G03F7/20

CPC classification number: G03F7/11 ,  C08F2/48 ,  C08F220/18 ,  C09D133/08 ,  C09D133/10 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/091 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/327 ,  G03F7/38 ,  G03F7/40 ,  C08F2220/283 ,  C08F2220/1875 ,  C08F2220/185

Abstract: A pattern forming method includes coating an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form an actinic ray-sensitive or radiation-sensitive film, coating a composition for forming a protective film onto the actinic ray-sensitive or radiation-sensitive film to form a protective film, exposing the actinic ray-sensitive or radiation-sensitive film covered with the protective film, and developing the exposed actinic ray-sensitive or radiation-sensitive film using a developer containing an organic solvent, in which the protective film contains a compound (A) including at least one group or bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond, and an ester bond, and a resin (X).

公开(公告)号：US20170038685A1

公开(公告)日：2017-02-09

申请号：US15291538

申请日：2016-10-12

Applicant: FUJIFILM Corporation

Inventor： Akiyoshi GOTO ,  Michihiro SHIRAKAWA ,  Keita KATO ,  Fumihiro YOSHINO ,  Kei YAMAMOTO

IPC: G03F7/039 ,  G03F7/16 ,  G03F7/40 ,  G03F7/38 ,  G03F7/32 ,  G03F7/004 ,  G03F7/20

CPC classification number: G03F7/0397 ,  C07C309/06 ,  C07C381/12 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/38 ,  G03F7/40 ,  H01L21/0274

Abstract: An active-light-sensitive or radiation-sensitive resin composition includes a resin (A) and a photoacid generator (B) capable of generating an acid upon irradiation with active light or radiation, in which the active-light-sensitive or radiation-sensitive resin composition contains at least a photoacid generator (B1) represented by the following General Formula (1) and a photoacid generator (B2) other than the photoacid generator (B1) as the photoacid generator (B).

Abstract translation: 本发明提供一种活性光敏或辐射敏感性树脂组合物，其包含当用活性光或辐射照射时产生酸的树脂（A）和光酸产生剂（B）。 光致酸产生剂（B）至少含有与光酸产生剂（B1）不同的由式（1）表示的光致酸产生剂（B1）和光酸产生剂（B2）。

公开(公告)号：US20160313645A1

公开(公告)日：2016-10-27

申请号：US15200059

申请日：2016-07-01

Applicant: FUJIFILM Corporation

Inventor： Keita KATO ,  Keiyu OU ,  Michihiro SHIRAKAWA ,  Akiyoshi GOTO ,  Masafumi KOJIMA

IPC: G03F7/20

CPC classification number: G03F7/0397 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/11 ,  G03F7/2035 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/325

Abstract: The present invention relates to a pattern forming method including: forming a film using an actinic ray-sensitive or radiation-sensitive resin composition that includes a (A) resin which has an increase in the polarity by the action of an acid, and thus, has a decrease in the solubility in a developer containing an organic solvent, a (B) compound capable of generating an acid upon irradiation with specific actinic ray or radiation, and a (C) solvent, exposing the film, and developing the exposed film using a developer including an organic solvent, in which the resin (A) has a structure in which a polar group is protected with a leaving group which decomposes to leave by the action of an acid, and the leaving group is a group represented by the following General Formula (I).

公开(公告)号：US20160223905A1

公开(公告)日：2016-08-04

申请号：US15092871

申请日：2016-04-07

Applicant: FUJIFILM Corporation

Inventor： Keiyu OU ,  Keita KATO ,  Michihiro SHIRAKAWA ,  Akiyoshi GOTO ,  Sou KAMIMURA

IPC: G03F7/004 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/32 ,  G03F7/325

Abstract: This active light-sensitive or radiation-sensitive resin composition contains a resin (A), a compound (B) capable of generating an acid upon irradiation with active light or radiation, and a compound (C) having at least one oxygen atom. The compound (C) does not include the resin (A) and the compound (B).

Abstract translation: 该活性的光敏性或辐射敏感性树脂组合物含有树脂（A），能够用活性光或辐射照射时能产生酸的化合物（B）和具有至少一个氧原子的化合物（C）。 化合物（C）不包括树脂（A）和化合物（B）。

公开(公告)号：US20160195814A1

公开(公告)日：2016-07-07

申请号：US15069300

申请日：2016-03-14

Applicant: FUJIFILM Corporation

Inventor： Yuichiro ENOMOTO ,  Ryosuke UEBA ,  Michihiro SHIRAKAWA ,  Hajime FURUTANI ,  Akiyoshi GOTO ,  Masafumi KOJIMA

IPC: G03F7/40 ,  G03F7/32 ,  G03F7/20

CPC classification number: G03F7/405 ,  G03F7/20 ,  G03F7/322 ,  G03F7/325 ,  G03F7/40 ,  H01L21/0273

Abstract: There is provided a pattern formation method comprising: a step (1) of forming a film using an actinic ray-sensitive or radiation-sensitive resin composition which contains a resin of which, due to a polarity being increased by an action of an acid, solubility decreases with respect to a developer which includes an organic solvent; a step (2) of exposing the film to an actinic ray or radiation; a step (3) of forming a target process pattern by developing the film using a developer which includes an organic solvent; and a step (4) of obtaining a processed pattern by applying a processing agent which includes a compound (x) which has at least one of a primary amino group and a secondary amino group with respect to the target process pattern.

Abstract translation: 提供了一种图案形成方法，包括：使用光化射线敏感或辐射敏感性树脂组合物形成膜的步骤（1），其包含由于通过酸的作用而极性增加的树脂， 相对于包含有机溶剂的显影剂，溶解度降低; 将膜暴露于光化射线或辐射的步骤（2）; 通过使用包含有机溶剂的显影剂显影该膜来形成目标工艺图案的步骤（3）; 以及通过应用包括相对于目标工艺图案具有伯氨基和仲氨基中的至少一个的化合物（x）的处理剂来获得加工图案的步骤（4）。

公开(公告)号：US20140227637A1

公开(公告)日：2014-08-14

申请号：US14257314

申请日：2014-04-21

Applicant: FUJIFILM Corporation

Inventor： Keita KATO ,  Michihiro SHIRAKAWA ,  Tadahiro ODANI ,  Atsushi NAKAMURA ,  Hidenori TAKAHASHI ,  Kaoru IWATO

IPC: G03F7/09 ,  G03F7/20

CPC classification number: G03F7/094 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/091 ,  G03F7/095 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325

Abstract: A pattern forming method contains: (i) a step of forming a bottom anti-reflective coating on a substrate by using a first resin composition (I), (ii) a step of forming a resist film on the bottom anti-reflective coating by using a second resin composition (II), (iii) a step of exposing a multi-layered film having the bottom anti-reflective coating and the resist film, and (iv) a step of developing the bottom anti-reflective coating and the resist film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.

Abstract translation: 图案形成方法包括：（i）通过使用第一树脂组合物（I）在基材上形成底部抗反射涂层的步骤，（ii）在底部抗反射涂层上形成抗蚀剂膜的步骤， 使用第二树脂组合物（II），（iii）暴露具有底部抗反射涂层和抗蚀剂膜的多层膜的步骤，以及（iv）显影底部抗反射涂层和抗蚀剂的步骤 通过使用含有机溶剂的显影剂来形成负图案的曝光的多层膜中的膜。