公开(公告)号：US20060254516A1

公开(公告)日：2006-11-16

申请号：US11489522

申请日：2006-07-20

申请人： Minoru Karasawa ,  Keiji Ishibashi ,  Masahiko Tanaka

发明人： Minoru Karasawa ,  Keiji Ishibashi ,  Masahiko Tanaka

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H01L21/67098 ,  C23C16/24 ,  C23C16/44

摘要： A heating element CVD system and a heating element CVD method which are capable of forming a high quality polycrystalline silicon film (polysilicon film) as a device in the case of producing a silicon film by using a heating element CVD system. The heating element CVD system and the heating element CVD method heat and maintain the inner surface of the structure surrounding the space between the substrate holder and the heating element to be at least 200° C. or higher, preferably at least 350° C. or higher during the formation of the silicon film on the substrate.

摘要翻译： 能够通过使用加热元件CVD系统制造硅膜的情况下能够形成高品质多晶硅膜（多晶硅膜）的加热元件CVD系统和加热元件CVD方法。 加热元件CVD系统和加热元件CVD法加热并保持围绕衬底保持器和加热元件之间的空间的结构的内表面至少为200℃以上，优选为至少350℃，或者 在衬底上形成硅膜时更高。

公开(公告)号：US20060003134A1

公开(公告)日：2006-01-05

申请号：US11148239

申请日：2005-06-09

申请人： Tomoki Uemura ,  Keiji Ishibashi ,  Shinsuke Fujiwara ,  Hideaki Nakahata

发明人： Tomoki Uemura ,  Keiji Ishibashi ,  Shinsuke Fujiwara ,  Hideaki Nakahata

IPC分类号： B32B9/00

CPC分类号： C30B33/00 ,  Y10T428/21

摘要： An AlxGayIn1-x-yN substrate in which particles having a grain size of at least 0.2 μm on a surface of the AlxGayIn1-x-yN substrate are at most 20 in number when a diameter of the AlxGayIn1-x-yN substrate is two inches, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Further, an AlxGayIn1-x-yN substrate in which, in a photoelectron spectrum of a surface of the AlxGayIn1-x-yN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C1s electrons and a peak area of N1s electrons (C1s electron peak area/N1s electron peak area) is at most 3, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al2s electrons and a peak area of N1s electrons (Al2s electron peak area/N1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.

摘要翻译： 在其中Al的表面上具有至少0.2μm的晶粒尺寸的颗粒的Al x N y N y N y 在1-xy N衬底中，当Al x N 2的直径为至多20个数量时， 在1-xy N衬底中的Ga 2 y是两英寸，并且其中Al x Ga y Y y >可以获得在1-xy N衬底中。 此外，在Al-N-N基底中，在Al 2 O 3的表面的光电子光谱中， 通过X射线光电子能谱检测角度为10°，在1-xy N衬底中，峰面积C < SUB> 1s电子和N 1s电子的峰面积（C 1s电子峰面积/ N 1s电子峰面积） 至多为3，并且可以获得可以获得Al x N y Na y In 1-xy N衬底的清洁方法。 此外，AlN基板，其中，通过X射线光电子能谱法测定AlN基板的表面的光电子光谱，检测角度为10°，Al 2基板的峰面积 电子和N 1s电子的峰面积（Al 2 S 3电子峰面积/ N 1s电子峰面积）为0.65以下，清洗 提供了可以获得AlN衬底的方法。

公开(公告)号：US5047417A

公开(公告)日：1991-09-10

申请号：US354306

申请日：1989-05-19

申请人： Norio Minami ,  Fumihiro Ozaki ,  Keiji Ishibashi ,  Yasuhiro Kabasawa ,  Megumi Ikemori ,  Toshiaki Ogawa ,  Takanori Kawamura

发明人： Norio Minami ,  Fumihiro Ozaki ,  Keiji Ishibashi ,  Yasuhiro Kabasawa ,  Megumi Ikemori ,  Toshiaki Ogawa ,  Takanori Kawamura

IPC分类号： C07C233/40 ,  C07C235/34 ,  C07C235/36 ,  C07C237/12 ,  C07C237/20 ,  C07C255/41 ,  C07C255/57 ,  C07C317/44 ,  C07C323/62 ,  C07D207/08 ,  C07D207/32 ,  C07D207/327 ,  C07D207/38 ,  C07D211/22 ,  C07D211/34 ,  C07D211/58 ,  C07D211/86 ,  C07D213/38 ,  C07D213/56 ,  C07D213/64 ,  C07D213/68 ,  C07D223/16 ,  C07D231/12 ,  C07D233/56 ,  C07D233/61 ,  C07D235/06 ,  C07D237/14 ,  C07D241/18 ,  C07D249/08 ,  C07D263/32 ,  C07D277/22 ,  C07D277/30 ,  C07D317/58 ,  C07D317/60 ,  C07D319/18 ,  C07D405/06 ,  C07D471/04 ,  C07D521/00

CPC分类号： C07D207/08 ,  C07C233/40 ,  C07C235/34 ,  C07C235/36 ,  C07C237/12 ,  C07C237/20 ,  C07C255/41 ,  C07C255/57 ,  C07C317/44 ,  C07C323/62 ,  C07D207/327 ,  C07D207/38 ,  C07D211/22 ,  C07D211/34 ,  C07D211/58 ,  C07D211/86 ,  C07D213/38 ,  C07D213/56 ,  C07D213/64 ,  C07D213/68 ,  C07D223/16 ,  C07D231/12 ,  C07D233/56 ,  C07D235/06 ,  C07D237/14 ,  C07D241/18 ,  C07D249/08 ,  C07D263/32 ,  C07D277/30 ,  C07D317/58 ,  C07D317/60 ,  C07D319/18 ,  C07D405/06 ,  C07D471/04 ,  C07C2101/08

摘要： A butenoic or propenoic acid derivative having the following formula in which G is an aryl or a heterocyclic ring, R11 and R12 are hydrogen or an alkyl, X is sulfur or oxygen, R2 and R3 are hydrogen, an substituent such as an alkyl and J is pyridyl or phenyl having substituents and a heterocyclic ring may be formed between R2, R3 and J is provided here and is useful in the pharmacological field. ##STR1##

公开(公告)号：US09105756B2

公开(公告)日：2015-08-11

申请号：US13540673

申请日：2012-07-03

申请人： Keiji Ishibashi

发明人： Keiji Ishibashi

IPC分类号： H01L29/49 ,  H01L29/872 ,  H01L29/66 ,  H01L29/868 ,  H01L29/04 ,  H01L29/16

CPC分类号： H01L29/36 ,  B28D5/045 ,  H01L21/046 ,  H01L29/04 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/868 ,  H01L29/872

摘要： A silicon carbide substrate capable of reducing on-resistance and improving yield of semiconductor devices is made of single-crystal silicon carbide, and sulfur atoms are present in one main surface at a ratio of not less than 60×1010 atoms/cm2 and not more than 2000×1010 atoms/cm2, and oxygen atoms are present in the one main surface at a ratio of not less than 3 at % and not more than 30 at %.

摘要翻译： 能够降低导通电阻并提高半导体器件的产率的碳化硅衬底由单晶碳化硅制成，并且硫原子以不小于60×10 10原子/ cm 2的比例存在于一个主表面中，而不是更多 大于2000×10 10原子/ cm 2，氧原子以不低于3at％且不大于30at％的比例存在于一个主表面中。

公开(公告)号：US20120164833A1

公开(公告)日：2012-06-28

申请号：US13415859

申请日：2012-03-09

申请人： Keiji Ishibashi ,  Masashi Futamura ,  Takayuki Nishiura

发明人： Keiji Ishibashi ,  Masashi Futamura ,  Takayuki Nishiura

IPC分类号： H01L21/304 ,  C09K13/00

CPC分类号： H01L21/02024 ,  C09G1/04

摘要： Afforded are a polishing agent, and a compound semiconductor manufacturing method and semiconductor device manufacturing method utilizing the agent, whereby the surface quality of compound semiconductor substrates can be favorably maintained, and high polishing rates can be sustained as well. The polishing agent is a polishing agent for GaαIn(1-α)AsβP(1-β) (0≦α≦1; 0≦β≦1) compound semiconductors, and includes an alkali metal carbonate, an alkali metal organic salt, a chlorine-based oxidizer, and an alkali metal phosphate, wherein the sum of the concentrations of the alkali metal carbonate and the alkali metal organic salt is between 0.01 mol/L and 0.02 mol/L, inclusive. The compound semiconductor manufacturing method comprises a step of preparing a GaαIn(1-α)AsβP(1-β) (0≦α≦1; 0≦β≦1) compound semiconductor, and a step of polishing the face of the compound semiconductor utilizing an aforedescribed polishing agent.

摘要翻译： 所使用的是抛光剂，以及利用该试剂的化合物半导体制造方法和半导体器件制造方法，由此可以有利地保持化合物半导体衬底的表面质量，并且还可以维持高的抛光速率。 抛光剂是用于GaαIn（1-α）As＆bgr; P（1-＆bgr;）（0＆nlE;α＆nlE; 1; 0＆nlE; bgr; nlE; 1）化合物半导体的抛光剂，包括碱金属碳酸盐，碱 金属有机盐，氯系氧化剂和碱金属磷酸盐，其中碱金属碳酸盐和碱金属有机盐的浓度之和为0.01mol / L至0.02mol / L。 化合物半导体制造方法包括制备化合物半导体的GaαIn（1-α）As＆bgr; P（1-＆bgr;）（0＆nlE;α＆nlE; 1; 0＆nlE; bgr; nlE; 1）化合物半导体的步骤， 使用上述抛光剂的化合物半导体的表面。

公开(公告)号：US20110031589A1

公开(公告)日：2011-02-10

申请号：US12934319

申请日：2009-01-19

申请人： Keiji Ishibashi

发明人： Keiji Ishibashi

IPC分类号： H01L29/20 ,  H01L21/306

CPC分类号： H01L29/2003 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406

摘要： A group III nitride substrate in one embodiment has a surface layer. The surface layer contains 3 at. % to 25 at. % of carbon and 5×1010 atoms/cm2 to 200×1010 atoms/cm2 of a p-type metal element. The group III nitride substrate has a stable surface.

摘要翻译： 一个实施例中的III族氮化物衬底具有表面层。 表层含有3个。 ％至25点。 碳原子数为5×10 10原子/ cm 2至200×10 10原子/ cm 2的p型金属元素。 III族氮化物衬底具有稳定的表面。

公开(公告)号：US07507668B2

公开(公告)日：2009-03-24

申请号：US11527682

申请日：2006-09-27

申请人： Keiji Ishibashi ,  Takayuki Nishiura

发明人： Keiji Ishibashi ,  Takayuki Nishiura

IPC分类号： H01L21/302

CPC分类号： H01L21/02024 ,  C09G1/02 ,  C09K3/1463 ,  H01L33/0095

摘要： The present polishing slurry is a polishing slurry for chemically mechanically polishing a surface of a GaxIn1−xAsyP1−y crystal (0≦x≦1, 0≦y≦1), characterized in that this polishing slurry contains abrasive grains formed of SiO2, this abrasive grain is a secondary particle in which a primary particle is associated, and a ratio d2/d1 of an average particle diameter d2 of a secondary particle to an average particle diameter d1 of a primary particle is not less than 1.6 and not more than 10. According to such the polishing slurry, a crystal surface having a small surface roughness can be formed on a GaxIn1−xAsyP1−y crystal at a high polishing rate and effectively.

摘要翻译： 本抛光浆料是用于对GaxIn1-xAsyP1-y晶体（0 <= x <= 1,0 <= y <= 1）的表面进行化学机械抛光的抛光浆料，其特征在于该抛光浆料含有形成的磨料颗粒 的SiO 2，该磨粒是初级粒子相关的二次粒子，二次粒子的平均粒径d2与一次粒子的平均粒径d1的比d2 / d1为1.6以上， 不大于10.根据这种抛光浆料，可以以高抛光速率有效地在GaxIn1-xAsyP1-y晶体上形成具有小表面粗糙度的晶体表面。

公开(公告)号：US20080299375A1

公开(公告)日：2008-12-04

申请号：US12149776

申请日：2008-05-08

申请人： Tomoki Uemura ,  Keiji Ishibashi ,  Shinsuke Fujiwara ,  Hideaki Nakahata

发明人： Tomoki Uemura ,  Keiji Ishibashi ,  Shinsuke Fujiwara ,  Hideaki Nakahata

IPC分类号： C01B21/072 ,  B32B9/00

CPC分类号： C30B33/00 ,  Y10T428/21

摘要： An AlxGayIn1-x-yN substrate in which particles having a grain size of at least 0.2 μm on a surface of the AlxGayIn1-x-yN substrate are at most 20 in number when a diameter of the AlxGayIn1-x-yN substrate is two inches, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Further, an AlxGayIn1-x-yN substrate in which, in a photoelectron spectrum of a surface of the AlxGayIn1-x-yN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C1s electrons and a peak area of N1s electrons (C1s electron peak area/N1s electron peak area) is at most 3, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al2s electrons and a peak area of N1s electrons (Al2s electron peak area/N1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.

摘要翻译： 当AlxGayIn1-x-yN基板的直径为2英寸时，AlxGayIn1-x-yN基板在AlxGayIn1-x-yN基板的表面上具有至少0.2μm的粒度的粒子的数目为20个以上的Al x Ga y In 1-x-y N基板 以及可以获得Al x Ga y In 1-x-y N基板的清洗方法。 此外，AlxGayIn1-x-yN衬底，其中，通过X射线光电子能谱法测定Al x Ga y In 1-x-y N衬底的表面的光电子光谱，检测角度为10°时，C1s电子的峰面积之比 并且N1s电子的峰面积（C1s电子峰面积/ N1s电子峰面积）为3以下，提供了可以获得Al x Ga y In 1-x-y N基板的清洗方法。 另外，AlN基板，其中，通过X射线光电子能谱法测定AlN基板的表面的光电子光谱，检测角度为10°，Al2s电子的峰面积与N1s电子的峰面积之比 （Al 2 S电子峰面积/ N1s电子峰面积）为0.65以下，设置可获得AlN基板的清洗方法。

公开(公告)号：US20070254401A1

公开(公告)日：2007-11-01

申请号：US11797131

申请日：2007-05-01

申请人： Takayuki Nishiura ,  Keiji Ishibashi

发明人： Takayuki Nishiura ,  Keiji Ishibashi

IPC分类号： H01L29/06 ,  H01L21/00 ,  H01L21/302

CPC分类号： H01L21/30625 ,  C09G1/02 ,  C30B29/403 ,  C30B33/00 ,  H01L21/02024 ,  H01L29/30

摘要： There is provided a method of processing a surface of a group III nitride crystal, that includes the steps of: polishing a surface of a group III nitride crystal with a polishing slurry containing abrasive grains; and thereafter polishing the surface of the group III nitride crystal with a polishing liquid at least once, and each step of polishing with the polishing liquid employs a basic polishing liquid or an acidic polishing liquid as the polishing liquid. The step of polishing with the basic or acidic polishing liquid allows removal of impurity such as abrasive grains remaining on the surface of the group III nitride crystal after it is polished with the slurry containing the abrasive grains.

摘要翻译： 提供一种处理III族氮化物晶体的表面的方法，其包括以下步骤：用含有磨粒的抛光浆料抛光III族氮化物晶体的表面; 然后用研磨液将III族氮化物晶体的表面抛光至少一次，并且用抛光液研磨的每个步骤都使用碱性研磨液或酸性研磨液作为研磨液。 用碱性或酸性抛光液抛光的步骤允许在含有磨料颗粒的浆料抛光后，去除残留在III族氮化物晶体表面上的杂质，例如磨粒。

公开(公告)号：US20070114122A1

公开(公告)日：2007-05-24

申请号：US11599058

申请日：2006-11-14

申请人： Keiji Ishibashi ,  Shunichi Wakayanagi

发明人： Keiji Ishibashi ,  Shunichi Wakayanagi

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： C23C14/35 ,  C23C14/0617 ,  C23C14/505 ,  H01J37/3408 ,  H01J37/3455

摘要： It is an object of the invention to provide sputtering method and a sputtering device which can provide a uniform film-thickness distribution over the entire area of the substrate. A substrate as an object for a film-forming process and a target formed of a film-forming material are arranged in a container so as to oppose to each other, and a film is formed on a substrate while reciprocating a magnet arranged on the side of the target opposite from the substrate in parallel with the surface of the target, and rotating the substrate by a rotating unit (rotating mechanism). The film is formed while reciprocating the magnet and rotating the substrate by the rotating unit (rotating mechanism) after having set the film-thickness distribution of the thin film formed on the substrate along the longitudinal direction of the magnet to be thicker in the center portion of the substrate than the both end portion thereof.

摘要翻译： 本发明的目的是提供溅射方法和溅射装置，其能够在基板的整个区域上提供均匀的膜厚度分布。 将作为成膜工序的目的的基板和由成膜材料形成的靶设置在彼此相对的容器中，并且在基板上形成膜，同时使布置在侧面上的磁铁往复运动 的与靶的表面平行的与基板相反的靶，并且通过旋转单元（旋转机构）旋转基板。 在将磁体的形成在基板上的薄膜的膜厚分布设定为较厚的中心部分之后，通过旋转单元（旋转机构）使磁体往复运动并旋转基板而形成薄膜 比其两端部分。