Semiconductor integrated circuit and operating method thereof
    31.
    发明授权
    Semiconductor integrated circuit and operating method thereof 有权
    半导体集成电路及其操作方法

    公开(公告)号:US08374571B2

    公开(公告)日:2013-02-12

    申请号:US13279408

    申请日:2011-10-24

    IPC分类号: H04B1/28 H04B1/06

    CPC分类号: H04B1/40 H03H11/26 H03K5/133

    摘要: An integrated circuit is equipped with a reception mixer and a signal generator. A multistage delay circuit generates a plurality of clock pulses in response to a reception carrier signal. A phase detection unit detects differences between a voltage level of a specific clock pulse and voltage levels of a predetermined number of clock pulses generated prior to the specific clock pulse to thereby detect a predetermined phase of the specific clock pulse. A selector of a clock generation unit outputs a plurality of selection clock pulse signals respectively having a plurality of phases from the clock pulse signals. A first signal synthetic logic circuit performs logical operations on the selection clock pulses to thereby generate local signals supplied to the reception mixer.

    摘要翻译: 集成电路配备有接收混频器和信号发生器。 多级延迟电路响应于接收载波信号而产生多个时钟脉冲。 相位检测单元检测特定时钟脉冲的电压电平和在特定时钟脉冲之前产生的预定数量的时钟脉冲的电压电平之间的差异,从而检测特定时钟脉冲的预定相位。 时钟生成单元的选择器从时钟脉冲信号输出分别具有多个相位的多个选择时钟脉冲信号。 第一信号合成逻辑电路对选择时钟脉冲执行逻辑运算,从而产生提供给接收混频器的本地信号。

    Information recording/reproducing device
    32.
    发明授权
    Information recording/reproducing device 有权
    信息记录/再现装置

    公开(公告)号:US08305797B2

    公开(公告)日:2012-11-06

    申请号:US13044384

    申请日:2011-03-09

    IPC分类号: G11C11/00

    摘要: According to one embodiment, an information recording/reproducing device includes a recording layer and a driver section. The recording layer has a first layer including a first compound. The first compound includes a mixed crystal of a first oxide containing a first metallic element and a second oxide. The second oxide has a crystal structure being same as the first oxide and contains a second metallic element different from the first metallic element. The driver section is configured to produce state change in the recording layer to record information by at least one of application of voltage to the recording layer and passage of current to the recording layer. Composition ratio of an element having a smaller ionic radius of the first and second metallic elements is not less than percolation threshold of a lattice formed of ions of the first and second metallic elements based on the crystal structure.

    摘要翻译: 根据一个实施例,信息记录/再现装置包括记录层和驱动器部分。 记录层具有包含第一化合物的第一层。 第一化合物包括含有第一金属元素和第二氧化物的第一氧化物的混合晶体。 第二氧化物具有与第一氧化物相同的晶体结构,并且含有与第一金属元素不同的第二金属元素。 驱动器部分被配置为在记录层中产生状态变化,以通过施加电压至记录层和将电流流向记录层中的至少一个来记录信息。 基于晶体结构,第一和第二金属元素离子半径较小的元素的组成比不小于由第一和第二金属元素的离子形成的晶格的渗透阈值。

    SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    37.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 有权
    半导体集成电路设备

    公开(公告)号:US20080238632A1

    公开(公告)日:2008-10-02

    申请号:US12057671

    申请日:2008-03-28

    IPC分类号: H04B7/00

    摘要: In an IC tag, when a semiconductor integrated circuit device is activated, an operation control unit sets existence/nonexistence of a communication distance limitation for reducing a communication distance to a state management unit. If the communication distance limitation is not set, a switch unit is turned ON and a demodulated command is inputted from a command demodulation circuit to a command decode unit. If the communication distance limitation is set, a power intensity monitor unit judges whether the power of a rectification circuit is a predetermined arbitrary field intensity or more. If the power is smaller than the predetermined arbitrary field intensity, the switch unit is turned OFF and various commands demodulated by the command demodulation circuit are not inputted to the command decode unit. As a result, the semiconductor integrated circuit device does not operate.

    摘要翻译: 在IC标签中,当半导体集成电路器件被激活时,操作控制单元设置存在/不存在通信距离限制,以减少与状态管理单元的通信距离。 如果没有设定通信距离限制,则开关单元被接通,并且解调命令从命令解调电路输入到命令解码单元。 如果设置了通信距离限制,则功率强度监视单元判定整流电路的功率是否为预定的任意场强度以上。 如果功率小于预定的任意场强,则切换单元关闭,并且由命令解调电路解调的各种命令不被输入到命令解码单元。 结果,半导体集成电路器件不工作。

    Optical recording medium and optical recording-reproducing method
    38.
    发明授权
    Optical recording medium and optical recording-reproducing method 失效
    光记录介质和光记录再现方法

    公开(公告)号:US07245576B2

    公开(公告)日:2007-07-17

    申请号:US10758481

    申请日:2004-01-16

    IPC分类号: G11B7/24

    摘要: An optical recording medium includes an optical recording layer, a separating layer formed on a reproducing light incident side of the optical recording layer, and a phase-change reproducing layer formed on the reproducing light incident side of the separating layer, absorbance of which phase-change reproducing layer is changed depending on whether a state of the optical recording layer is a recording mark or a space. A transfer portion to which a state of the optical recording layer is transferred is formed in a portion having high absorbance of the phase-change reproducing layer by irradiation with reproducing light, while a portion of the phase-change reproducing layer other than the transfer portion is kept in a state optically differing from the transfer portion.

    摘要翻译: 光记录介质包括光记录层,形成在光记录层的再现光入射侧的分离层和形成在分离层的再现光入射侧的相变再现层, 改变再现层根据光学记录层的状态是记录标记还是空间而改变。 通过照射再生光,在相变再生层的吸光度高的部分形成转印了光记录层的状态的转印部分,而转印部分以外的相变再生层的一部分 保持在与转印部分光学不同的状态。