POST-CMP TREATING LIQUID AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME
    33.
    发明申请
    POST-CMP TREATING LIQUID AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
    使用其的半导体器件的后CMP处理液体和制造方法

    公开(公告)号:US20110195888A1

    公开(公告)日:2011-08-11

    申请号:US13091732

    申请日:2011-04-21

    IPC分类号: C11D3/60

    CPC分类号: H01L21/02074

    摘要: Post-CMP treating liquids are provided, one of which includes water, an amphoteric surfactant, an anionic surfactant, a complexing agent, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Another includes water, polyphenol, an anionic surfactant, ethylene diamine tetraacetic acid, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Both of the treating liquids have a pH ranging from 4 to 9, and exhibit a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.

    摘要翻译: 提供后CMP处理液,其中之一包括水,两性表面活性剂,阴离子表面活性剂,络合剂,其表面具有羧基和磺酰基的树脂颗粒,其一次粒径为10至60nm, 和四甲基氢氧化铵。 另外还包括水,多酚,阴离子表面活性剂,乙二胺四乙酸,其表面具有羧基和磺酰基的树脂颗粒,其一次粒径为10至60nm,四甲基氢氧化铵。 两种处理液的pH范围为4至9,并且以10nm / min或更低的速率显示绝缘膜和导电膜的抛光速率。

    Method of manufacturing semiconductor device
    34.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US07985685B2

    公开(公告)日:2011-07-26

    申请号:US12262439

    申请日:2008-10-31

    IPC分类号: H01L21/311

    摘要: A method for manufacturing a semiconductor device is provided, the method includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a slurry containing resin particles to leave the organic film precursor in the recess, baking the left organic film precursor at a second temperature which is higher than the first temperature to remove the solvent to obtain a first organic film embedded in the recess, forming a second organic film on the insulating film, thereby obtaining an underlying film, forming an intermediate layer and a resist film successively above the underlying film, and subjecting the resist film to patterning exposure.

    摘要翻译: 提供了一种制造半导体器件的方法,该方法包括通过将含有溶剂和有机组分的溶液涂覆在位于半导体衬底上方并具有凹槽的绝缘膜上的溶液形成涂覆膜,在第一温度下烘烤该涂膜 其不能实现有机成分的交联以获得有机膜前体,使用含有树脂颗粒的浆料将有机膜前体抛光以在凹槽中离开有机膜前体,在第二温度下烘烤左有机膜前体 高于第一温度以除去溶剂以获得嵌入在凹部中的第一有机膜,在绝缘膜上形成第二有机膜,从而获得下面的膜,在基底膜上连续形成中间层和抗蚀剂膜 并对抗蚀剂膜进行图案曝光。

    Substrate processing method and substrate processing apparatus
    36.
    发明授权
    Substrate processing method and substrate processing apparatus 有权
    基板处理方法和基板处理装置

    公开(公告)号:US07767472B2

    公开(公告)日:2010-08-03

    申请号:US11882398

    申请日:2007-08-01

    IPC分类号: H01L21/00

    CPC分类号: B24B37/013 B24B9/065

    摘要: A substrate processing method is used to polish a substrate. The substrate processing method includes rotating a substrate 13 by a motor 12, polishing a first surface of a peripheral portion of the substrate 13 by pressing a polishing surface of a polishing mechanism 20 against the first surface, determining a polishing end point of the first surface by monitoring a polished state of the first surface, stopping the polishing according to the determining the polishing end point, determining a polishing time spent for the polishing, determining a polishing time for a second surface of the peripheral portion based on the polishing time of the first surface, and polishing the second surface for the determined polishing time.

    摘要翻译: 基板处理方法用于抛光基板。 基板处理方法包括通过马达12旋转基板13,通过将研磨机构20的研磨面压在第一面上来研磨基板13的周边部的第一面,确定第一面的研磨终点 通过监测第一表面的抛光状态,根据确定抛光终点停止抛光,确定抛光所用的抛光时间,基于抛光时间确定周边部分的第二表面的抛光时间 第一表面,并抛光第二表面以确定抛光时间。