Die interconnect structures and methods

    公开(公告)号:US10892225B2

    公开(公告)日:2021-01-12

    申请号:US16336582

    申请日:2016-09-29

    Abstract: Generally discussed herein are systems, devices, and methods to reduce crosstalk interference. An interconnect structure can include a first metal layer, a second metal layer, a third metal layer, the first metal layer closer to the first and second dies than the second and third metal layers, the first metal layer including a ground plane within a footprint of a bump field of the interconnect structure and signal traces outside the footprint of the bump field.

    High power terahertz impulse for fault isolation

    公开(公告)号:US10746780B2

    公开(公告)日:2020-08-18

    申请号:US15776979

    申请日:2015-11-18

    Abstract: An apparatus comprises a signal generator circuit, a test probe, a signal sensor circuit, and a defect detection circuit. The signal generator circuit is configured to generate an impulse test signal having an impulse waveform and adjust a bandwidth of the impulse test signal. The test probe is electrically coupled to the signal generator circuit and configured to apply the impulse test signal to a device under test (DUT). The signal sensor circuit is configured to sense a conducted test signal produced by applying the impulse test signal to the DUT with the test probe. The defect detection circuit is configured to generate an indication of a defect in the DUT using the conducted test signal.

    SEMICONDUCTOR PACKAGE WITH THROUGH BRIDGE DIE CONNECTIONS

    公开(公告)号:US20200243448A1

    公开(公告)日:2020-07-30

    申请号:US15774306

    申请日:2015-12-22

    Abstract: Semiconductor packages with through bridge die connections and a method of manufacture therefor is disclosed. The semiconductor packages may house one or more electronic components as a system in a package (SiP) implementation. A bridge die, such as an embedded multi-die interconnect bridge (EMIB), may be embedded within one or more build-up layers of the semiconductor package. The bridge die may have an electrically conductive bulk that may be electrically connected on a backside to a power plane and used to deliver power to one or more dies attached to the semiconductor package via interconnects formed on a topside of the bridge die that are electrically connected to the bulk of the bridge die. A more direct path for power delivery through the bridge die may be achieved compared to routing power around the bridge die.

    MICROELECTRONIC ASSEMBLIES HAVING MAGNETIC CORE INDUCTORS

    公开(公告)号:US20200098621A1

    公开(公告)日:2020-03-26

    申请号:US16140398

    申请日:2018-09-24

    Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die having a first surface and an opposing second surface, wherein the first die is in a first dielectric layer; a magnetic core inductor, having a first surface and an opposing second surface, in the first dielectric layer, wherein the magnetic core inductor may include a first conductive pillar at least partially surrounded by a magnetic material, and a second conductive pillar coupled to the first conductive pillar; and a second die having a first surface and an opposing second surface, wherein the second die is in a second dielectric layer, and wherein the first surface of the second die is coupled to the second surface of the magnetic core inductor.

    MICROELECTRONIC ASSEMBLIES
    37.
    发明申请

    公开(公告)号:US20200091128A1

    公开(公告)日:2020-03-19

    申请号:US16161578

    申请日:2018-10-16

    Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface; a first die having a first surface and an opposing second surface, wherein the first die is embedded in a first dielectric layer, wherein the first surface of the first die is coupled to the second surface of the package substrate, and wherein the first dielectric layer is between a second dielectric layer and the second surface of the package substrate; a second die having a first surface and an opposing second surface, wherein the second die is embedded in the second dielectric layer, and wherein the first surface of the second die is coupled to the second surface of the package substrate by a conductive pillar; and a shield structure that at least partially surrounds the conductive pillar.

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