Hyperchip
    31.
    发明授权

    公开(公告)号:US11024601B2

    公开(公告)日:2021-06-01

    申请号:US16348448

    申请日:2017-12-21

    Abstract: Hyperchip structures and methods of fabricating hyperchips are described. In an example, an integrated circuit assembly includes a first integrated circuit chip having a device side opposite a backside. The device side includes a plurality of transistor devices and a plurality of device side contact points. The backside includes a plurality of backside contacts. A second integrated circuit chip includes a device side having a plurality of device contact points thereon. The second integrated circuit chip is on the first integrated circuit chip in a device side to device side configuration. Ones of the plurality of device contact points of the second integrated circuit chip are coupled to ones of the plurality of device contact points of the first integrated circuit chip. The second integrated circuit chip is smaller than the first integrated circuit chip from a plan view perspective.

    Hyperchip
    36.
    发明授权

    公开(公告)号:US11824041B2

    公开(公告)日:2023-11-21

    申请号:US17226967

    申请日:2021-04-09

    Abstract: Hyperchip structures and methods of fabricating hyperchips are described. In an example, an integrated circuit assembly includes a first integrated circuit chip having a device side opposite a backside. The device side includes a plurality of transistor devices and a plurality of device side contact points. The backside includes a plurality of backside contacts. A second integrated circuit chip includes a device side having a plurality of device contact points thereon. The second integrated circuit chip is on the first integrated circuit chip in a device side to device side configuration. Ones of the plurality of device contact points of the second integrated circuit chip are coupled to ones of the plurality of device contact points of the first integrated circuit chip. The second integrated circuit chip is smaller than the first integrated circuit chip from a plan view perspective.

    Method and apparatus to develop lithographically defined high aspect ratio interconnects

    公开(公告)号:US11822249B2

    公开(公告)日:2023-11-21

    申请号:US17541162

    申请日:2021-12-02

    Inventor: Pooya Tadayon

    CPC classification number: G03F7/2041 B05C3/04 G03F7/30 G03F7/3021 H01L27/00

    Abstract: Disclosed is a method to develop lithographically defined high aspect ratio interconnects. Also disclosed is an apparatus comprising at least one vessel having a bottom and at least one sidewall extending from the bottom, wherein the at least one sidewall encloses an interior of the at least one vessel, a shaft having a proximal end and a distal end, wherein the distal end of the shaft extends into the interior of the at least one vessel, wherein the proximal end of the shaft is coupled to a motor, at least one support structure which extends laterally from the shaft, and a substrate attachment fixture on a distal end of the at least one support structure, wherein the at least one support structure and the substrate attachment fixture are within the interior of the at least one vessel.

    Multi-member test probe structure
    38.
    发明授权

    公开(公告)号:US11774489B2

    公开(公告)日:2023-10-03

    申请号:US17343648

    申请日:2021-06-09

    CPC classification number: G01R31/2853 G01R1/06738 G01R3/00 G01R31/2889

    Abstract: A testing arrangement for testing Integrated Circuit (IC) interconnects is provided. In an example, the testing arrangement includes a substrate, and a first interconnect structure. The first interconnect structure may include a first member having a first end to attach to the substrate and a second end opposite the first end, and a second member having a first end to attach to the substrate and a second end opposite the first end. In some examples, the second end of the first member and the second end of the second member are to contact a second interconnect structure of a IC device under test, and the first end of the first member and the first end of the second member are coupled such that the first member and the second member are to transmit, in parallel, current to the second interconnect structure of the IC device under test.

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