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    Strain sensing element, pressure sensor, microphone, blood pressure sensor, and touch panel
    31.
    发明授权
    Strain sensing element, pressure sensor, microphone, blood pressure sensor, and touch panel 有权
    应变传感元件，压力传感器，麦克风，血压传感器和触摸屏

    公开(公告)号：US09342179B2

    公开(公告)日：2016-05-17

    申请号：US14471226

    申请日：2014-08-28

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Tomohiko Nagata ,  Akio Hori ,  Yoshihiro Higashi

    IPC分类号： G01L1/12 ,  G06F3/041 ,  G01L9/16 ,  A61B5/021 ,  G01L9/00 ,  H04R19/00 ,  H04R19/04 ,  H04R31/00 ,  A61B5/00

    CPC分类号： G06F3/0414 ,  A61B5/02141 ,  A61B5/6824 ,  A61B2562/0247 ,  G01L1/125 ,  G01L9/0041 ,  G01L9/16 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00

    摘要： According to one embodiment, a strain sensing element includes a film unit, and a sensing unit. The film unit has a film surface and is capable of being deformed. The sensing unit includes a first sensing element and a second sensing element. The first sensing element is provided between a part of the film unit and the second sensing element. The first sensing element includes a first magnetic layer having a changeable magnetization with a deformation of the film unit, a second magnetic layer provided apart from the first magnetic layer, and a first spacer layer provided between the first and second magnetic layers. The second sensing element includes a third magnetic layer having a changeable magnetization with the deformation of the film unit, a fourth magnetic layer provided apart from the third magnetic layer, and a second spacer layer provided between the third and fourth magnetic layers.

    摘要翻译： 根据一个实施例，应变感测元件包括膜单元和感测单元。 膜单元具有膜表面并且能够变形。 感测单元包括第一感测元件和第二感测元件。 第一感测元件设置在胶片单元的一部分和第二感测元件之间。 第一感测元件包括具有可变磁化强度的第一磁性层，其具有胶片单元的变形，与第一磁性层分开设置的第二磁性层以及设置在第一和第二磁性层之间的第一间隔层。 第二感测元件包括具有可变磁化强度的第三磁性层和膜单元的变形，与第三磁性层分开设置的第四磁性层以及设置在第三和第四磁性层之间的第二间隔层。

    Magneto-resistance effect device with mixed oxide function layer
    32.
    发明授权
    Magneto-resistance effect device with mixed oxide function layer 有权
    具有混合氧化物功能层的磁阻效应器件

    公开(公告)号：US09177574B2

    公开(公告)日：2015-11-03

    申请号：US14469484

    申请日：2014-08-26

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami

    IPC分类号： G11B5/39 ,  B82Y25/00 ,  G01R33/09 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01F10/32 ,  H01F41/32

    CPC分类号： G11B5/39 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3906 ,  G11B5/398 ,  G11B5/3983 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/325 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    摘要： According to one embodiment, a magneto-resistance effect device includes: a multilayer structure having a cap layer; a magnetization pinned layer; a magnetization free layer provided between the cap layer and the magnetization pinned layer; a spacer layer provided between the magnetization pinned layer and the magnetization free layer; a function layer which is provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer, the function layer having oxide containing at least one element selected from Zn, In, Sn and Cd, and at least one element selected from Fe, Co and Ni; and a pair of electrodes for applying a current perpendicularly to a film plane of the multilayer structure.

    摘要翻译： 根据一个实施例，磁阻效应器件包括：具有盖层的多层结构; 磁化钉扎层; 设置在所述盖层和所述磁化固定层之间的无磁化层; 设置在磁化固定层和无磁化层之间的间隔层; 设置在磁化被钉扎层，磁化被钉扎层和隔离层之间，间隔层和磁化自由层之间，在磁化自由层中，或在磁化自由层和覆盖层之间的功能层， 具有含有选自Zn，In，Sn和Cd中的至少一种元素的氧化物的功能层和选自Fe，Co和Ni中的至少一种元素; 以及用于垂直于多层结构的膜平面施加电流的一对电极。

    CPP Device with a Plurality of Metal Oxide Templates in a Confining Current Path (CCP) Spacer
    33.
    发明申请
    CPP Device with a Plurality of Metal Oxide Templates in a Confining Current Path (CCP) Spacer 有权
    具有多个金属氧化物模板的CPP器件在限流电路（CCP）间隔器中

    公开(公告)号：US20150170836A1

    公开(公告)日：2015-06-18

    申请号：US14628508

    申请日：2015-02-23

    申请人： TDK Corporation ,  Kabushiki Kaisha Toshiba

    发明人： Kunliang Zhang ,  Min Li ,  Yue Liu ,  Hideaki Fukuzawa ,  Hiromi Yuasa

    IPC分类号： H01F41/30

    CPC分类号： H01F41/307 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3106 ,  G11B5/313 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3268 ,  H01L43/08 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49227

    摘要： A novel CCP scheme is disclosed for a CPP-GMR sensor in which an amorphous metal/alloy layer such as Hf is inserted between a lower Cu spacer and an oxidizable layer such as Al, Mg, or AlCu prior to performing a pre-ion treatment (PIT) and ion assisted oxidation (IAO) to transform the amorphous layer into a first metal oxide template and the oxidizable layer into a second metal oxide template both having Cu metal paths therein. The amorphous layer promotes smoothness and smaller grain size in the oxidizable layer to minimize variations in the metal paths and thereby improves dR/R, R, and dR uniformity by 50% or more. A thin Cu layer may be inserted between the amorphous layer and oxidizable layer before the PIT and IAO processes are performed.

    摘要翻译： 公开了一种用于CPP-GMR传感器的新型CCP方案，其中在执行预离子处理之前，在诸如Al，Mg或AlCu的下部Cu间隔物和可氧化层之间插入诸如Hf的非晶态金属/合金层 （PIT）和离子辅助氧化（IAO），以将非晶层转变为第一金属氧化物模板，并将可氧化层转变成其中具有Cu金属路径的第二金属氧化物模板。 无定形层促进可氧化层中的平滑度和较小的晶粒尺寸以最小化金属路径的变化，从而将dR / R，R和DR均匀度提高50％以上。 在执行PIT和IAO处理之前，可以在非晶层和可氧化层之间插入薄Cu层。

    STRAIN SENSING ELEMENT, PRESSURE SENSOR, MICROPHONE, BLOOD PRESSURE SENSOR, AND TOUCH PANEL
    34.
    发明申请
    STRAIN SENSING ELEMENT, PRESSURE SENSOR, MICROPHONE, BLOOD PRESSURE SENSOR, AND TOUCH PANEL 有权
    应变感应元件，压力传感器，麦克风，血压传感器和触控面板

    公开(公告)号：US20150082917A1

    公开(公告)日：2015-03-26

    申请号：US14471226

    申请日：2014-08-28

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Yoshihiko FUJI ,  Hideaki Fukuzawa ,  Tomohiko Nagata ,  Akio Hori ,  Yoshihiro Higashi

    IPC分类号： G01L1/12 ,  G06F3/041 ,  A61B5/021 ,  H04R1/00 ,  G01L9/00 ,  G01L9/16

    CPC分类号： G06F3/0414 ,  A61B5/02141 ,  A61B5/6824 ,  A61B2562/0247 ,  G01L1/125 ,  G01L9/0041 ,  G01L9/16 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00

    摘要： According to one embodiment, a strain sensing element includes a film unit, and a sensing unit. The film unit has a film surface and is capable of being deformed. The sensing unit includes a first sensing element and a second sensing element. The first sensing element is provided between a part of the film unit and the second sensing element. The first sensing element includes a first magnetic layer having a changeable magnetization with a deformation of the film unit, a second magnetic layer provided apart from the first magnetic layer, and a first spacer layer provided between the first and second magnetic layers. The second sensing element includes a third magnetic layer having a changeable magnetization with the deformation of the film unit, a fourth magnetic layer provided apart from the third magnetic layer, and a second spacer layer provided between the third and fourth magnetic layers.

    摘要翻译： 根据一个实施例，应变感测元件包括膜单元和感测单元。 膜单元具有膜表面并且能够变形。 感测单元包括第一感测元件和第二感测元件。 第一感测元件设置在胶片单元的一部分和第二感测元件之间。 第一感测元件包括具有可变磁化强度的第一磁性层，其具有胶片单元的变形，与第一磁性层分开设置的第二磁性层以及设置在第一和第二磁性层之间的第一间隔层。 第二感测元件包括具有可变磁化强度的第三磁性层和膜单元的变形，与第三磁性层分开设置的第四磁性层和设置在第三和第四磁性层之间的第二间隔层。

    Strain sensing element and pressure sensor
    36.
    发明授权
    Strain sensing element and pressure sensor 有权

    公开(公告)号：US09952030B2

    公开(公告)日：2018-04-24

    申请号：US14887749

    申请日：2015-10-20

    申请人： Kabushiki Kaisha Toshiba

    发明人： Shiori Kaji ,  Hideaki Fukuzawa ,  Tomohiko Nagata ,  Akio Hori ,  Yoshihiko Fuji

    IPC分类号： G01L9/00 ,  G01B7/24 ,  G01B7/16 ,  G01L9/16

    CPC分类号： G01B7/24 ,  G01B7/18 ,  G01L9/0042 ,  G01L9/16

    摘要： According to one embodiment, a strain sensing element includes a film unit being deformable, a first and a second magnetic unit, and a strain sensor. The first magnetic unit is provided on the film unit and is arranged with the film unit in a first direction. The first magnetic unit includes a first magnetic body layer and a first intermediate magnetic layer. The second magnetic unit is provided on the film unit and is arranged with the first magnetic unit in a second direction crossing the first direction. The second magnetic unit includes a second magnetic body layer and a second intermediate magnetic layer. The strain sensor is provided on the film unit between the first magnetic unit and the second magnetic unit. An electrical characteristic of the strain sensor changes according to a deformation of the film unit.

    Acoustic sensor and acoustic sensor system
    38.
    发明授权
    Acoustic sensor and acoustic sensor system 有权
    声传感器和声传感器系统

    公开(公告)号：US09581571B2

    公开(公告)日：2017-02-28

    申请号：US14465300

    申请日：2014-08-21

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Kenji Otsu ,  Hideaki Fukuzawa ,  Michiko Hara ,  Tomio Ono

    IPC分类号： G01N29/14 ,  G01N29/28 ,  G01N29/12 ,  G01N29/24

    CPC分类号： G01H11/02 ,  G01B7/24 ,  G01N29/12 ,  G01N29/14 ,  G01N29/245 ,  G01N29/28 ,  G01N2291/0234 ,  G01N2291/0238 ,  G01N2291/0258

    摘要： According to one embodiment, an acoustic sensor includes a base and a first strain sensing element. The base includes a support and a first film unit supported by the support. The first film unit is flexible. The first strain sensing element is provided on a first surface of the first film unit. The first strain sensing element includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first magnetic layer and the second magnetic layer. An angle between a magnetization of the first magnetic layer and a magnetization of the second magnetic layer is variable by an acoustic wave. The acoustic wave is transmitted to a first film unit by a first transmitting material in contact with the first film unit.

    摘要翻译： 根据一个实施例，声学传感器包括基座和第一应变传感元件。 基座包括支撑件和由支撑件支撑的第一胶片单元。 第一个电影单位是灵活的。 第一应变传感元件设置在第一胶片单元的第一表面上。 第一应变传感元件包括第一磁性层，第二磁性层和设置在第一磁性层和第二磁性层之间的第一中间层。 第一磁性层的磁化和第二磁性层的磁化之间的角度可以通过声波而变化。 声波通过与第一胶片单元接触的第一透射材料传输到第一胶片单元。

    Pressure sensor, acceleration sensor, and method for manufacturing pressure sensor
    40.
    发明授权
    Pressure sensor, acceleration sensor, and method for manufacturing pressure sensor 有权
    压力传感器，加速度传感器和制造压力传感器的方法

    公开(公告)号：US09322726B2

    公开(公告)日：2016-04-26

    申请号：US14565755

    申请日：2014-12-10

    申请人： Kabushiki Kaisha Toshiba

    发明人： Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Yoshihiro Higashi ,  Michiko Hara

    IPC分类号： G01L1/12 ,  G01L1/22 ,  G01P15/105 ,  G01L9/16

    CPC分类号： G01L1/2287 ,  G01L1/12 ,  G01L1/125 ,  G01L5/16 ,  G01L9/16 ,  G01P15/105

    摘要： According to one embodiment, a pressure sensor includes a base and a sensor unit provided on the base. The sensor unit includes a transducing thin film having a first surface, a first strain sensing element provided on the first surface, and a second strain sensing element provided on the first surface. The first strain sensing element includes a first magnetic layer, a first film having a first oxygen concentration, a second magnetic layer provided between the first magnetic layer and the first film, and a first intermediate layer provided between the first and the second magnetic layer. The second strain sensing element includes a third magnetic layer, a second film having a second oxygen concentration different from the first concentration, a fourth magnetic layer provided between the third magnetic layer and the second film, and a second intermediate layer provided between the third and the fourth magnetic layer.

    摘要翻译： 根据一个实施例，压力传感器包括设置在基座上的底座和传感器单元。 传感器单元包括具有第一表面的转换薄膜，设置在第一表面上的第一应变感测元件和设置在第一表面上的第二应变感测元件。 第一应变传感元件包括第一磁性层，具有第一氧浓度的第一膜，设置在第一磁性层和第一膜之间的第二磁性层以及设置在第一和第二磁性层之间的第一中间层。 第二应变传感元件包括第三磁性层，具有不同于第一浓度的第二氧浓度的第二膜，设置在第三磁性层和第二膜之间的第四磁性层，以及设置在第三和第二膜之间的第二中间层 第四磁性层。