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    Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
    32.
    发明授权
    Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression 有权
    Merie等离子体反应器，其具有用电弧抑制调谐到等离子体的架空RF电极

    公开(公告)号：US06894245B2

    公开(公告)日：2005-05-17

    申请号：US10007367

    申请日：2001-10-22

    申请人： Daniel J. Hoffman ,  Yan Ye ,  Dan Katz ,  Douglas A. Buchberger, Jr. ,  Xiaoye Zhao ,  Kang-Lie Chiang ,  Robert B. Hagen ,  Matthew L. Miller

    发明人： Daniel J. Hoffman ,  Yan Ye ,  Dan Katz ,  Douglas A. Buchberger, Jr. ,  Xiaoye Zhao ,  Kang-Lie Chiang ,  Robert B. Hagen ,  Matthew L. Miller

    IPC分类号： H05H1/46 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  B23K10/00

    CPC分类号： H01J37/3244 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/3266

    摘要： A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaining a plasma within the chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that the overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve plasma ion density distribution uniformity.

    摘要翻译： 一种用于处理半导体工件的等离子体反应器，包括具有室壁并具有用于保持半导体支撑件的工件支撑件的反应室，所述电极包括室壁的一部分，RF发电机，用于以 发电机到顶置电极并且能够将室内的等离子体保持在期望的等离子体离子密度水平。 顶置电极具有这样的电容，使得在期望的等离子体离子密度下在室中形成的顶置电极和等离子体以电极 - 等离子体共振频率共振，发电机的频率至少接近电极 - 等离子体共振频率。 反应器还包括围绕晶片表面的等离子体处理区域的一组MERIE磁体，其产生缓慢循环的磁场，其搅动等离子体以改善等离子体离子密度分布均匀性。

    Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone
    34.
    发明授权
    Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone 有权
    具有多个气体注入区域的等离子体反应器装置，其具有用于每个区域的时变单独的可配置气体组成

    公开(公告)号：US08231799B2

    公开(公告)日：2012-07-31

    申请号：US11414026

    申请日：2006-04-28

    申请人： Kallol Bera ,  Xiaoye Zhao ,  Kenny L. Doan ,  Ezra Robert Gold ,  Paul Lukas Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel J. Hoffman

    发明人： Kallol Bera ,  Xiaoye Zhao ,  Kenny L. Doan ,  Ezra Robert Gold ,  Paul Lukas Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel J. Hoffman

    IPC分类号： H01L21/00 ,  C23C16/00

    CPC分类号： H01L21/3065 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/31116

    摘要： A plasma reactor for processing a workpiece such as a semiconductor wafer has a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes plural gas sources containing different gas species, plural process gas inlets and an array of valves capable of coupling any of said plural gas sources to any of said plural process gas inlets. The reactor also includes a controller governing said array of valves and is programmed to change the flow rates of gases through said inlets over time. A ceiling plasma source power electrode of the reactor has plural gas injection zones coupled to the respective process gas inlets. In a preferred embodiment, the plural gas sources comprise supplies containing, respectively, fluorocarbon or fluorohydrocarbon species with respectively different ratios of carbon and fluorine chemistries. They further include an oxygen or nitrogen supply and a diluent gas supply. The controller is programmed to produce flow of different process gas species or mixtures thereof through different ones of said plural gas injection zones. The controller is further programmed to change over time the species content of the gases flowing through different ones of said plural gas injection zones.

    摘要翻译： 用于处理诸如半导体晶片的工件的等离子体反应器具有限定处理室的壳体，被配置为在处理期间支撑室内的工件并包括等离子体偏置功率电极的工件支撑件。 反应器还包括含有不同气体种类的多个气体源，多个处理气体入口和能够将所述多个气体源中的任一个耦合到所述多个处理气体入口中的任何一个的阀阵列。 反应器还包括控制所述阀阵列的控制器，并被编程为随时间改变通过所述入口的气体的流速。 反应器的天花板等离子体源功率电极具有耦合到各个工艺气体入口的多个气体注入区域。 在一个优选的实施方案中，多个气体源包括分别含有分别具有不同比例的碳和氟化学物质的碳氟化合物或氟代烃物质的物料。 它们还包括氧气或氮气供应和稀释气体供应。 控制器被编程为通过不同的所述多个气体注入区域产生不同工艺气体种类或其混合物的流动。 控制器进一步被编程为随时间改变流过不同的所述多个气体注入区域的气体的物质含量。

    ANNULAR BAFFLE
    35.
    发明申请
    ANNULAR BAFFLE 有权
    环形碎片

    公开(公告)号：US20080314571A1

    公开(公告)日：2008-12-25

    申请号：US12109332

    申请日：2008-04-24

    申请人： Daniel J. Hoffman ,  Kallol Bera

    发明人： Daniel J. Hoffman ,  Kallol Bera

    IPC分类号： F28F13/12 ,  F28F9/22

    CPC分类号： F15D1/0005 ,  C23C14/22 ,  C23C16/44 ,  C23C16/4412 ,  C23C16/4585 ,  C23C16/4586 ,  H01J37/32009 ,  H01J37/32623 ,  H01J37/32633 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831

    摘要： A baffle assembly for an etching apparatus is disclosed. The baffle assembly comprises a ring and a lower baffle portion having a curved wall extending between a flange portion and a lower frame portion. A heating assembly may be present within the lower frame portion to control the temperature of the baffle. The baffle assembly may help confine the plasma within the processing space in the chamber. The ring may comprise silicon carbide and the lower baffle portion may comprise aluminum.

    摘要翻译： 公开了一种用于蚀刻装置的挡板组件。 挡板组件包括环和下挡板部分，其具有在凸缘部分和下框架部分之间延伸的弯曲壁。 加热组件可能存在于下框架部分内以控制挡板的温度。 挡板组件可以帮助将等离子体限制在腔室中的处理空间内。 环可以包括碳化硅，并且下挡板部分可以包括铝。

    Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content
    36.
    发明授权
    Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content 有权
    使用在晶片表面上聚合蚀刻气体的等离子体蚀刻工艺，以及在独立供气气体区域中管理或控制气体的另外的聚合物，其中气体含量随时间和空间调制

    公开(公告)号：US07540971B2

    公开(公告)日：2009-06-02

    申请号：US11414015

    申请日：2006-04-28

    申请人： Kallol Bera ,  Xiaoye Zhao ,  Kenny L. Doan ,  Ezra Robert Gold ,  Paul Lukas Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel J. Hoffman

    发明人： Kallol Bera ,  Xiaoye Zhao ,  Kenny L. Doan ,  Ezra Robert Gold ,  Paul Lukas Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel J. Hoffman

    IPC分类号： H01L21/00 ,  C23F1/00

    CPC分类号： H01L21/31116 ,  H01J37/321 ,  H01J37/32449 ,  H01J2237/3347

    摘要： A plasma etch process etches high aspect ratio openings in a dielectric film on a workpiece in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a polymerizing etch process gas through an annular zone of gas injection orifices in the ceiling electrode, and evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece. The high aspect ratio openings are etched in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor by applying VHF source power and/or HF and/or LF bias power to the electrodes at the ceiling and/or the electrostatic chuck. The process further includes slowing the deposition rate of the polymer, minimizing etch stop and/or increasing the etch rate in a region of the workpiece typically the center by injecting oxygen or nitrogen and/or high-fluorine containing gas through gas injection orifice in the corresponding region of the ceiling electrode, and adjusting the flow rate of the oxygen or nitrogen and/or high-fluorine containing gas through the gas injection orifice to minimize the difference between profiles and etch depths at the workpiece center and the workpiece periphery.

    摘要翻译： 等离子体蚀刻工艺在具有覆盖在工件上的天花板电极的反应器中的工件上的电介质膜中蚀刻高纵横比孔，以及支撑工件的静电卡盘。 该方法包括将聚合蚀刻工艺气体注入天花板电极中的气体注入孔的环形区域，以及通过围绕工件边缘的泵送环从反应器排出气体。 通过在蚀刻工艺气体中衍生出蚀刻物质，同时将从蚀刻工艺气体衍生的聚合物沉积到工件上，通过在反应器中产生等离子体，通过施加VHF源功率和/或HF来在电介质膜中蚀刻高纵横比开口 和/或LF偏压电力到天花板和/或静电卡盘上的电极。 该方法进一步包括减缓聚合物的沉积速率，通过在气体喷射孔中注入氧或氮和/或高含氟气体，在工件的区域中通常为中心使蚀刻停止和/或增加蚀刻速率最小化 并且通过气体注入孔调节氧气或氮气和/或高含氟气体的流量，以最小化工件中心和工件外围处的轮廓和蚀刻深度之间的差异。

    Annular baffle
    38.
    发明授权
    Annular baffle 有权
    环形挡板

    公开(公告)号：US08647438B2

    公开(公告)日：2014-02-11

    申请号：US12109332

    申请日：2008-04-24

    申请人： Daniel J. Hoffman ,  Kallol Bera

    发明人： Daniel J. Hoffman ,  Kallol Bera

    IPC分类号： C23C16/00 ,  C23F1/00

    CPC分类号： F15D1/0005 ,  C23C14/22 ,  C23C16/44 ,  C23C16/4412 ,  C23C16/4585 ,  C23C16/4586 ,  H01J37/32009 ,  H01J37/32623 ,  H01J37/32633 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831

    摘要： A baffle assembly for an etching apparatus is disclosed. The baffle assembly comprises a ring and a lower baffle portion having a curved wall extending between a flange portion and a lower frame portion. A heating assembly may be present within the lower frame portion to control the temperature of the baffle. The baffle assembly may help confine the plasma within the processing space in the chamber. The ring may comprise silicon carbide and the lower baffle portion may comprise aluminum.

    摘要翻译： 公开了一种用于蚀刻装置的挡板组件。 挡板组件包括环和下挡板部分，其具有在凸缘部分和下框架部分之间延伸的弯曲壁。 加热组件可能存在于下框架部分内以控制挡板的温度。 挡板组件可以帮助将等离子体限制在腔室中的处理空间内。 环可以包括碳化硅，并且下挡板部分可以包括铝。

    Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones
    39.
    发明授权
    Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones 有权
    在独立的内部和外部气体注入区域中分别进料碳贫和富碳聚合蚀刻气体的等离子体蚀刻工艺

    公开(公告)号：US07541292B2

    公开(公告)日：2009-06-02

    申请号：US11414027

    申请日：2006-04-28

    申请人： Kallol Bera ,  Xiaoye Zhao ,  Kenny L. Doan ,  Ezra Robert Gold ,  Paul Lukas Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel J. Hoffman

    发明人： Kallol Bera ,  Xiaoye Zhao ,  Kenny L. Doan ,  Ezra Robert Gold ,  Paul Lukas Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel J. Hoffman

    IPC分类号： H01L21/461

    CPC分类号： H01L21/76802 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/3266 ,  H01J37/32706 ,  H01J2237/3347 ,  H01L21/31116

    摘要： A plasma etch process for etching high aspect ratio openings in a dielectric film on a workpiece is carried out in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a first polymerizing etch process gas through a radially inward one of plural concentric gas injection zones in the ceiling electrode and injecting a second polymerizing etch process gas through a radially outward one of the plural concentric gas injection zones in the ceiling electrode, the compositions of the first and second process gases having first and second carbon-to-fluorine ratios that differ from one another. The process further includes evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece, and etching the high aspect ratio openings in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor.

    摘要翻译： 用于蚀刻工件上的电介质膜中的高纵横比开口的等离子体蚀刻工艺在具有覆盖工件的顶部电极的反应器和支撑工件的静电卡盘上进行。 该方法包括将第一聚合蚀刻工艺气体通过天花板电极中的多个同心气体注入区的径向向内的一个注入，并且通过天花板电极中的多个同心气体注入区中的径向向外的一个喷射第二聚合蚀刻工艺气体， 第一和第二工艺气体的组成具有彼此不同的第一和第二碳 - 氟比率。 该方法还包括通过围绕工件边缘的泵送环空将气体从反应器排出，以及用蚀刻工艺气体衍生的蚀刻物质蚀刻电介质膜中的高纵横比开口，同时沉积衍生自蚀刻工艺气体的聚合物 通过在反应器中产生等离子体而在工件上。