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公开(公告)号：US20070252476A1
公开(公告)日：2007-11-01
申请号：US11790806
申请日：2007-04-27
申请人： Masafumi Iwaki , Jun Tsutsumi , Tokihiro Nishihara , Tsuyoshi Yokoyama , Takeshi Sakashita , Shinji Taniguchi , Masanori Ueda , Go Endo
发明人： Masafumi Iwaki , Jun Tsutsumi , Tokihiro Nishihara , Tsuyoshi Yokoyama , Takeshi Sakashita , Shinji Taniguchi , Masanori Ueda , Go Endo
IPC分类号： H01L41/00 , H01L41/047
摘要： A piezoelectric thin-film resonator includes a substrate, a lower electrode provided on the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film so as to have a portion that overlaps the lower electrode across the piezoelectric film. At least a part of an outer end of the piezoelectric film is further in than an outer end of an opposing region in which the upper and lower electrodes overlap each other across the piezoelectric film.
摘要翻译： 压电薄膜谐振器包括基板，设置在基板上的下电极，设置在下电极上的压电薄膜和设置在压电薄膜上的上电极，以便具有与下电极重叠的部分跨越压电 电影。 压电薄膜的外端部的至少一部分进一步位于上下电极跨越压电薄膜的相对区域的外端。
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公开(公告)号：US20060255693A1
公开(公告)日：2006-11-16
申请号：US11430184
申请日：2006-05-09
申请人： Tokihiro Nishihara , Tsuyoshi Yokoyama , Shinji Taniguchi , Takeshi Sakashita , Jun Tsutsumi , Masafumi Iwaki , Masanori Ueda
发明人： Tokihiro Nishihara , Tsuyoshi Yokoyama , Shinji Taniguchi , Takeshi Sakashita , Jun Tsutsumi , Masafumi Iwaki , Masanori Ueda
IPC分类号： H01L41/00
摘要： A piezoelectric thin-film resonator includes: a lower electrode that is formed on a substrate; a piezoelectric film that is formed on the lower electrode; and an upper electrode that is formed on the piezoelectric film. In the piezoelectric thin-film resonator, the upper electrode has a greater film thickness than the lower electrode.
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公开(公告)号：US20060244553A1
公开(公告)日：2006-11-02
申请号：US11413104
申请日：2006-04-28
申请人： Tsuyoshi Yokoyama , Tokihiro Nishihara , Shinji Taniguchi , Takeshi Sakashita , Jun Tsutsumi , Masafumi Iwaki , Masanori Ueda
发明人： Tsuyoshi Yokoyama , Tokihiro Nishihara , Shinji Taniguchi , Takeshi Sakashita , Jun Tsutsumi , Masafumi Iwaki , Masanori Ueda
IPC分类号： H03H9/56
CPC分类号： H03H9/173 , H03H3/04 , H03H9/132 , H03H9/174 , H03H2003/0428 , H03H2003/0457
摘要： A piezoelectric thin-film resonator includes a lower electrode provided on a substrate, a piezoelectric thin film provided on the lower electrode, and an upper electrode provided on the piezoelectric thin film. A membrane region is defined by a region where the upper electrode and the lower electrode overlap each other to sandwich the piezoelectric thin film therebetween and has an elliptical shape, and the lower electrode is also provided at an outer side of the membrane region in a region in which neither an extraction electrode of the upper electrode nor an extraction electrode of the lower electrode is provided.
摘要翻译： 压电薄膜谐振器包括设置在基板上的下电极，设置在下电极上的压电薄膜和设置在压电薄膜上的上电极。 膜区域由上电极和下电极彼此重叠的区域限定，以夹在其间的压电薄膜并具有椭圆形状，并且下电极也设置在膜区域的外侧，区域 其中不设置上电极的引出电极和下电极的引出电极。
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公开(公告)号：US20060091764A1
公开(公告)日：2006-05-04
申请号：US11259347
申请日：2005-10-27
申请人： Jun Tsutsumi , Tsuyoshi Yokoyama , Takeshi Sakashita , Shinji Taniguchi , Masafumi Iwaki , Tokihiro Nishihara , Masanori Ueda
发明人： Jun Tsutsumi , Tsuyoshi Yokoyama , Takeshi Sakashita , Shinji Taniguchi , Masafumi Iwaki , Tokihiro Nishihara , Masanori Ueda
IPC分类号： H01L41/08
CPC分类号： H03H9/02149 , H03H9/02118 , H03H9/132 , H03H9/174 , H03H2003/0428
摘要： A piezoelectric thin-film resonator includes: a substrate; a lower electrode that is formed on the substrate; a piezoelectric film that is formed on the lower electrode and the substrate; and an upper electrode that is formed on the piezoelectric film, with the piezoelectric film being partially interposed between the lower electrode and the upper electrode facing each other. In this piezoelectric thin-film resonator, at least a part of the outer periphery of the piezoelectric film interposed between the lower electrode and the upper electrode overlaps the outer periphery of the region formed by the upper electrode and the lower electrode facing each other.
摘要翻译： 压电薄膜谐振器包括：基板; 形成在基板上的下电极; 形成在下电极和基板上的压电膜; 以及形成在所述压电膜上的上电极，所述压电膜被部分插入在所述下电极和所述上电极彼此面对之间。 在该压电薄膜谐振器中，夹在下电极和上电极之间的压电薄膜的外周的至少一部分与由上电极和下电极相对的区域的外周重叠。
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公开(公告)号：US20050264137A1
公开(公告)日：2005-12-01
申请号：US11138893
申请日：2005-05-27
申请人： Shinji Taniguchi , Tokihiro Nishihara , Takeshi Sakashita , Tsuyoshi Yokoyama , Masafumi Iwaki , Masanori Ueda , Tsutomu Miyashita
发明人： Shinji Taniguchi , Tokihiro Nishihara , Takeshi Sakashita , Tsuyoshi Yokoyama , Masafumi Iwaki , Masanori Ueda , Tsutomu Miyashita
摘要： A piezoelectric thin-film resonator includes a device substrate and a laminated body provided on the device substrate and composed of a lower electrode, an upper electrode and a piezoelectric film sandwiched between the lower and upper electrodes. The laminated body has a membrane portion in which the upper and lower electrodes overlap with each other through the piezoelectric film, and a gap has a dome shape being formed between the device substrate and the lower electrode and located below the membrane portion.
摘要翻译： 压电薄膜谐振器包括器件基板和设置在器件基板上并由夹在下电极和上电极之间的下电极，上电极和压电薄膜组成的层叠体。 层叠体具有通过压电膜彼此重叠的上部电极和下部电极的膜部，并且在该器件基板和下部电极之间形成有位于该膜部下方的间隙。
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公开(公告)号：US09035536B2
公开(公告)日：2015-05-19
申请号：US13563505
申请日：2012-07-31
CPC分类号： H03H3/04 , H03H9/171 , H03H2003/021 , H03H2003/023 , H03H2003/025 , H03H2003/0407 , Y10T29/42
摘要： A piezoelectric thin-film resonator includes: a lower electrode provided on a substrate; a piezoelectric film that is provided on the lower electrode and includes at least two layers; an upper electrode that is provided on the piezoelectric film and has a region sandwiching the piezoelectric film with the lower electrode and facing the lower electrode; and an insulating film that is provided in a region in which the lower electrode and the upper electrode face each other and between each of the at least two layers, wherein an upper face of the insulating film is flatter than a lower face of the insulating film.
摘要翻译： 压电薄膜谐振器包括：设置在基板上的下电极; 压电膜，其设置在所述下电极上并且包括至少两层; 上部电极，其设置在所述压电膜上，并且具有将所述压电膜与所述下部电极夹在中间且与所述下部电极相对的区域; 以及绝缘膜，其设置在所述下电极和所述上电极彼此面对并且在所述至少两层中的每一个之间的区域中，其中所述绝缘膜的上表面比所述绝缘膜的下表面平坦 。
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公开(公告)号：US08941450B2
公开(公告)日：2015-01-27
申请号：US13431669
申请日：2012-03-27
CPC分类号： H03H9/173 , H03H3/04 , H03H9/0095 , H03H9/02086 , H03H9/131 , H03H9/132 , H03H9/568 , H03H9/605 , H03H2003/0471
摘要： An acoustic wave device includes a main resonator and a sub resonator each having a substrate, a lower electrode provided on the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on an upper side of the piezoelectric film. A frequency control film is provided on an upper side of a resonance area in which the upper electrode and the lower electrode face each other in at least one of the main resonator and the sub resonator. The frequency control film has multiple convex patterns, and the convex patterns are arranged with a common pitch for spurious adjustment and with different areas in the main resonator and the sub resonator.
摘要翻译： 声波装置包括主谐振器和子谐振器，每个具有基板，设置在基板上的下电极，设置在下电极上的压电膜和设置在压电膜上侧的上电极。 频率控制膜设置在谐振区域的上侧，其中上电极和下电极在主谐振器和子谐振器中的至少一个中彼此面对。 频率控制膜具有多个凸形图案，并且凸形图案以公共间距布置以进行杂散调整，并且在主谐振器和子谐振器中具有不同的区域。
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公开(公告)号：US08841819B2
公开(公告)日：2014-09-23
申请号：US13240407
申请日：2011-09-22
摘要： An acoustic wave device includes: a first piezoelectric thin film resonator including a first lower electrode, a first upper electrode and a first piezoelectric film sandwiched between the first lower and upper electrodes; a decoupler film provided on the first upper electrode; and a second piezoelectric thin film resonator provided on the decoupler film and including a second lower electrode, a second upper electrode and a second piezoelectric film sandwiched between the second lower and upper electrodes, wherein the first piezoelectric film and the second piezoelectric film comprise aluminum nitride and include an element increasing a piezoelectric constant of the aluminum nitride.
摘要翻译： 声波装置包括：第一压电薄膜谐振器，包括第一下电极，第一上电极和夹在第一下电极和上电极之间的第一压电薄膜; 设置在第一上电极上的去耦膜; 以及第二压电薄膜谐振器，其设置在所述去耦膜上并且包括夹在所述第二下电极和上电极之间的第二下电极，第二上电极和第二压电薄膜，其中所述第一压电薄膜和所述第二压电薄膜包括氮化铝 并且包括增加氮化铝的压电常数的元素。
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公开(公告)号：US08756777B2
公开(公告)日：2014-06-24
申请号：US12647794
申请日：2009-12-28
申请人： Shinji Taniguchi , Tokihiro Nishihara , Tsuyoshi Yokoyama , Masafumi Iwaki , Go Endo , Yasuyuki Saitou , Hisanori Ehara , Masanori Ueda
发明人： Shinji Taniguchi , Tokihiro Nishihara , Tsuyoshi Yokoyama , Masafumi Iwaki , Go Endo , Yasuyuki Saitou , Hisanori Ehara , Masanori Ueda
IPC分类号： H04R17/00 , H03H9/205 , H03H9/56 , H03H9/64 , H03H9/15 , H03H9/17 , H03H9/54 , H03H9/60 , H03H3/00 , H03H3/007
CPC分类号： H03H9/205 , H03H3/00 , H03H3/0073 , H03H3/04 , H03H9/0211 , H03H9/02118 , H03H9/02133 , H03H9/02149 , H03H9/131 , H03H9/132 , H03H9/15 , H03H9/173 , H03H9/174 , H03H9/178 , H03H9/54 , H03H9/568 , H03H9/587 , H03H9/588 , H03H9/605 , H03H9/6483 , H03H2003/021 , H03H2003/023 , H03H2003/0414 , H03H2003/0471 , Y10T29/42 , Y10T29/49002 , Y10T29/49005 , Y10T29/49124 , Y10T29/49208 , Y10T29/49224
摘要： A method of manufacturing a ladder filter including first and second resonators includes: forming a piezoelectric film on an entire surface of a substrate that has respective lower electrodes of the first and second resonator formed thereon, an conductive film on the piezoelectric film, and a second film on the conductive film; forming a pattern of the second film in a prescribed region in the second area; forming a first film on an entire surface of the substrate; etching the first film, forming a pattern of the first film, the second film and the conductive film in the second area, and forming a pattern of the first film and the conductive film in the first area, to form respective upper electrodes from the conductor film; and thereafter, etching the piezoelectric film to form respective patterns of the piezoelectric film in the first and second areas, respectively.
摘要翻译： 一种制造包括第一和第二谐振器的梯形滤波器的方法包括：在其上形成有第一和第二谐振器的各个下电极的基板的整个表面上形成压电膜，在压电膜上形成导电膜， 导电膜上的膜; 在所述第二区域中的规定区域中形成所述第二膜的图案; 在所述基板的整个表面上形成第一膜; 蚀刻第一膜，在第二区域中形成第一膜，第二膜和导电膜的图案，并且在第一区域中形成第一膜和导电膜的图案，以从导体形成相应的上电极 电影; 然后蚀刻压电膜，分别在第一和第二区域形成压电膜的各自图案。
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40.发明授权Film bulk acoustic resonator, filter, communication module and communication apparatus 有权薄膜体声共振器，滤波器，通信模块和通信装置公开(公告)号：US08653908B2
公开(公告)日：2014-02-18
申请号：US12921150
申请日：2008-03-04
申请人： Motoaki Hara , Tokihiro Nishihara , Shinji Taniguchi , Takeshi Sakashita , Tsuyoshi Yokoyama , Masafumi Iwaki , Masanori Ueda
发明人： Motoaki Hara , Tokihiro Nishihara , Shinji Taniguchi , Takeshi Sakashita , Tsuyoshi Yokoyama , Masafumi Iwaki , Masanori Ueda
IPC分类号： H03H9/54
CPC分类号： H03H9/174 , H03H3/02 , H03H9/02118 , H03H9/173 , H03H2003/021 , H03H2003/023
摘要： A piezoelectric thin film resonator of the present has a substrate 1, an intermediate layer 7 disposed on the substrate 1 and is formed of an insulator, a lower electrode 3 disposed on the intermediate layer 7, a piezoelectric film 4 disposed on the lower electrode 3, and an upper electrode 5 disposed on a position facing the lower electrode 3 with the piezoelectric film 4 interposed therebetween, in which, in a resonant region 8 where the lower electrode 3 and the upper electrode 5 face each other, a space 6 is formed in the substrate 1 and the intermediate layer 7 or between the lower electrode 3 and the intermediate layer 7 and the region of the space 6 is included in the resonant region 8. With the structure, the dissipation of the vibrational energy to the substrate from the resonance portion can be suppressed, thereby improving the quality factor.
摘要翻译： 本发明的压电薄膜谐振器具有基板1，设置在基板1上并由绝缘体形成的中间层7，设置在中间层7上的下部电极3，设置在下部电极3上的压电膜4 以及设置在面向下电极3的位置上的上电极5，其间插入压电膜4，其中在下电极3和上电极5彼此面对的谐振区域8中形成有空间6 在基板1和中间层7中，或在下部电极3和中间层7之间，并且空间6的区域包含在谐振区域8中。通过这种结构，振动能量从基板 可以抑制共振部分，从而提高质量因素。
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