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174 条记录 (耗时 0.199 秒)

    Pole tip structure for thin film magnetic heads
    33.
    发明授权
    Pole tip structure for thin film magnetic heads 失效
    用于薄膜磁头的极尖结构

    公开(公告)号：US5488528A

    公开(公告)日：1996-01-30

    申请号：US292630

    申请日：1994-08-18

    申请人： Mao-Min Chen ,  Kochan Ju ,  Neil L. Robertson ,  Po-Kang Wang

    发明人： Mao-Min Chen ,  Kochan Ju ,  Neil L. Robertson ,  Po-Kang Wang

    IPC分类号： G11B5/31 ,  G11B5/147

    CPC分类号： G11B5/3163 ,  G11B5/3116 ,  G11B5/3183

    摘要： A horizontal thin film magnetic head is provided which has well aligned pole tips. The head includes first and second seedlayers, the first and second seedlayers being located below a first pole tip and only the second seedlayer being located below the second pole tip. The first pole tip may be capped with a nonmagnetic material such as copper. A very narrow sidegap is employed between the first and second pole tips.

    摘要翻译： 提供了具有良好对准的极尖的水平薄膜磁头。 头部包括第一和第二种子层，第一和第二种子层位于第一极端部下方，并且仅第二种子层位于第二极尖端下方。 第一极尖可以用诸如铜的非磁性材料加盖。 在第一和第二极尖之间使用非常窄的侧隙。

    Magnetoresistive read transducer having improved bias profile
    34.
    发明授权
    Magnetoresistive read transducer having improved bias profile 失效
    具有改进的偏置轮廓的磁阻读取传感器

    公开(公告)号：US5285339A

    公开(公告)日：1994-02-08

    申请号：US843702

    申请日：1992-02-28

    申请人： Mao-Min Chen ,  Kochan Ju ,  Mohamad T. Krounbi ,  Ching H. Tsang ,  Po-Kang Wang

    发明人： Mao-Min Chen ,  Kochan Ju ,  Mohamad T. Krounbi ,  Ching H. Tsang ,  Po-Kang Wang

    IPC分类号： G11B5/39 ,  G11B5/127

    CPC分类号： G11B5/3903

    摘要： An MR read transducer having passive end regions separated by a central active region comprises an MR layer made from a material having a low uniaxial magnetic anisotropy. A soft magnetic bias layer is adjacent to but spaced from the MR layer in the central region only, and the soft magnetic bias layer is made from a material having a high uniaxial magnetic anisotropy. A longitudinal bias is produced directly in each of the end regions only, and the means for producing the longitudinal bias comprise a layer made from a material having a high uniaxial magnetic anisotropy. Control of the uniaxial anisotropy can be achieved by choosing materials of appropriate magnetostriction or intrinsic uniaxial anisotropy.

    摘要翻译： 具有由中心有源区域分离的无源端区域的MR读取传感器包括由具有低单轴磁各向异性的材料制成的MR层。 软磁偏置层仅与中心区域中的MR层相邻但间隔开，并且软磁偏置层由具有高单轴磁各向异性的材料制成。 仅在每个端部区域中直接产生纵向偏压，并且用于产生纵向偏压的装置包括由具有高单轴磁各向异性的材料制成的层。 单轴各向异性的控制可以通过选择适当的磁致伸缩材料或固有单轴各向异性来实现。

    Ruthenium bias compensation layer for spin valve head and process of manufacturing
    35.
    发明授权
    Ruthenium bias compensation layer for spin valve head and process of manufacturing 失效
    用于自旋阀头的钌偏置补偿层和制造过程

    公开(公告)号：US06396671B1

    公开(公告)日：2002-05-28

    申请号：US09525670

    申请日：2000-03-15

    申请人： Cheng T. Horng ,  Mao-Min Chen ,  Kochan Ju ,  Min Li ,  Simon H. Liao ,  Ku-Ying Tong

    发明人： Cheng T. Horng ,  Mao-Min Chen ,  Kochan Ju ,  Min Li ,  Simon H. Liao ,  Ku-Ying Tong

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3143 ,  G11B5/3903 ,  H01F10/3268 ,  H01F10/3295 ,  H01F41/325 ,  Y10T29/49044

    摘要： A spin valve structure, and method for manufacturing it, are described. The valve is subject to only small bias point shifts by sense current fields while at the same time has good GMR characteristics. This is achieved by introducing a layer of about 15 Angstroms of ruthenium between the seed layer and the free layer. This acts as an effective bias control layer with the added benefit of providing interfaces (to both the seed and the free layer) that are highly favorable to specular reflection of the conduction electrons. The HCP crystal structure of this ruthenium layer also improves the crystalline quality of the free layer thereby improving its performance with respect to the GMR ratio.

    摘要翻译： 自旋阀结构及其制造方法。 阀门只能通过感应电流场进行小的偏移点偏移，同时具有良好的GMR特性。 这通过在种子层和自由层之间引入约15埃的钌层来实现。 这充当有效的偏置控制层，具有提供对传导电子的镜面反射非常有利的界面（对种子和自由层）的附加益处。 该钌层的HCP晶体结构也改善了自由层的结晶质量，从而提高了其相对于GMR比的性能。

    GMR configuration with enhanced spin filtering
    36.
    发明授权
    GMR configuration with enhanced spin filtering 失效
    GMR配置与增强的自旋过滤

    公开(公告)号：US06770382B1

    公开(公告)日：2004-08-03

    申请号：US09443447

    申请日：1999-11-22

    申请人： Jei-Wei Chang ,  Bernard Dieny ,  Mao-Min Chen ,  Cheng Horng ,  Kochan Ju ,  Simon Liao

    发明人： Jei-Wei Chang ,  Bernard Dieny ,  Mao-Min Chen ,  Cheng Horng ,  Kochan Ju ,  Simon Liao

    IPC分类号： G11B5127

    CPC分类号： H01F10/30 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3272 ,  H01L43/08 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/1157 ,  Y10T428/1171 ,  Y10T428/12944 ,  Y10T428/2495

    摘要： A Spin Valve GMR and Spin Filter SVGMR configuration where in the first embodiment an important buffer layer is composed of an metal oxide having a crystal lattice constant that is close the 1st FM free layer's crystal lattice constant and has the same crystal structure (e.g., FCC, BCC, etc.). The metal oxide buffer layer enhances the specular scattering. The spin valve giant magnetoresistance (SVGMR) sensor comprises: a seed layer over the substrate. An important metal oxide buffer layer (buffer layer) over the seed layer. The metal oxide layer preferably is comprised of NiO or alpha-Fe2O3. A free ferromagnetic layer over the metal oxide layer. A non-magnetic conductor spacer layer over the free ferromagnetic layer. A pinned ferromagnetic layer (2nd FM pinned) over the non-magnetic conductor spacer layer and a pinning material layer over the pinned ferromagnetic layer. In the second embodiment, a high conductivity layer (HCL) is formed over the buffer layer to create a spin filter -SVGMR. The HCL layer enhances the GMR ratio of the spin filter SVGMR. The third embodiment is a pinned FM layer comprised of a three layer structure of an lower AP layer, a spacer layer (e.g., Ru) and an upper AP layer.

    摘要翻译： 自旋阀GMR和自旋滤波器SVGMR配置，其中在第一实施例中，重要的缓冲层由具有接近第1个FM自由层的晶格常数的晶格常数的金属氧化物组成并且具有相同的晶体结构 例如FCC，BCC等）。 金属氧化物缓冲层增强了镜面散射。 自旋阀巨磁阻（SVGMR）传感器包括：衬底上的种子层。 种子层上重要的金属氧化物缓冲层（缓冲层）。 金属氧化物层优选由NiO或α-Fe2O3组成。 在金属氧化物层上的自由铁磁层。 在自由铁磁层上的非磁性导体间隔层。 在非磁性导体间隔层上方的钉扎铁磁层（第二个FM被钉住）和钉扎铁磁层上的钉扎材料层。 在第二实施例中，在缓冲层上形成高电导率层（HCL）以产生自旋滤波器-SVGMR。 HCL层增强了旋转过滤器SVGMR的GMR比。 第三实施例是由下AP层，间隔层（例如Ru）和上AP层组成的三层结构的钉扎FM层。

    Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration
    37.
    发明授权
    Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration 失效
    具有反并联交换配置的带状磁阻（SMR）和双条磁阻（DSMR）头的制造方法

    公开(公告)号：US06430015B2

    公开(公告)日：2002-08-06

    申请号：US09773743

    申请日：2001-02-02

    申请人： Kochan Ju ,  Mao-Min Chen ,  Cheng T. Horng ,  Jei-Wei Chang

    发明人： Kochan Ju ,  Mao-Min Chen ,  Cheng T. Horng ,  Jei-Wei Chang

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/3948 ,  G11B2005/3996

    摘要： A longitudinally magnetically biased dual stripe magnetoresistive (DSMR) sensor element comprises a first patterned magnetoresistive (MR) layer. There are contacts at the opposite ends of the patterned magnetoresistive (MR) layer with a first pair of stacks defining a track width of the first magnetoresistive (MR) layer with a first pair of stacks defining a track width of the first magnetoresistive (MR) layer, each of the stacks including a first Anti-Ferro-Magnetic (AFM) layer and a first lead layer. With the first MR layer in place the device was annealed in the presence of a longitudinal external magnetic field. A second patterned magnetoresistive (MR) layer was formed above the previous structure. There are contacts at the opposite ends of the second patterned magnetoresistive (MR) layer with a second pair of stacks defining a second track width of the second patterned magnetoresistive (MR) layer. Each of the second pair of stacks includes spacer layer is composed of a metal, a Ferro-Magnetic (FM) layer, a second Anti-Ferro-Magnetic (AFM) layer and a second lead layer. With the second MR layer in place, the device was annealed in the presence of a second longitudinal external magnetic field.

    摘要翻译： 纵向磁偏置双条磁阻（DSMR）传感器元件包括第一图案化磁阻（MR）层。 在图案化磁阻（MR）层的相对端处存在触点，第一对叠层限定第一磁阻（MR）层的轨道宽度，第一对堆叠限定第一磁阻（MR）的磁道宽度， 层，每个堆叠包括第一抗铁磁（AFM）层和第一引线层。 在第一MR层就位的情况下，器件在存在纵向外部磁场的情况下退火。 在先前结构之上形成第二图案化磁阻（MR）层。 在第二图案化磁阻（MR）层的相对端具有限定第二图案化磁阻（MR）层的第二磁道宽度的第二对叠层的触点。 第二对堆叠中的每一个包括间隔层由金属，铁磁（FM）层，第二抗铁磁（AFM）层和第二引线层组成。 在第二MR层就位的情况下，器件在第二纵向外部磁场的存在下退火。

    Planarized thin film magnetic write head with submicron trackwidth
    38.
    发明授权
    Planarized thin film magnetic write head with submicron trackwidth 失效
    具有亚微米轨道宽度的平面化薄膜磁写头

    公开(公告)号：US5652687A

    公开(公告)日：1997-07-29

    申请号：US531530

    申请日：1995-09-21

    申请人： Mao-Min Chen ,  Kochan Ju ,  Neil Leslie Robertson ,  Hugo Alberto Emilio Santini

    发明人： Mao-Min Chen ,  Kochan Ju ,  Neil Leslie Robertson ,  Hugo Alberto Emilio Santini

    IPC分类号： G11B5/187 ,  G11B5/23 ,  G11B5/235 ,  G11B5/31 ,  G11B5/147

    CPC分类号： G11B5/3103 ,  G11B5/3116 ,  G11B5/3133 ,  G11B5/3146 ,  G11B5/1872 ,  G11B5/232 ,  G11B5/235 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

    摘要： A thin film magnetic write head is provided with a notch structure located on top of one of two pole layers. The notch structure is a generally U-shaped thin film layer which forms a trench inside the U for the containment of one or more pole tip layers in the pole tip region of the head. The notch structure has front surfaces at the tips of the legs of the U which lie in a plane that forms a part of the air bearing surface. The thickness of the notch layer is substantially equal to the thickness or thicknesses of the one or more pole tip layers located in the trench. A method of manufacturing the write head includes forming a very thin photoresist layer for defining the notch structure. The notch structure is well-defined which in turn allows the one or more pole tip layers to be well-defined with a very narrow trackwidth in the trench.

    摘要翻译： 薄膜磁性写头设置有位于两个极层之一的顶部上的凹口结构。 凹口结构是大致U形的薄膜层，其在U形内部形成沟槽，用于容纳头部的磁极尖端区域中的一个或多个极尖端层。 凹口结构在位于形成空气轴承表面的一部分的平面中的U形腿的顶端具有前表面。 切口层的厚度基本上等于位于沟槽中的一个或多个极尖端层的厚度或厚度。 一种制造写入头的方法包括形成非常薄的光致抗蚀剂层以限定凹口结构。 凹口结构是明确的，这又允许一个或多个极尖端层在沟槽中具有很窄的轨道宽度。

    Close packed magnetic head linear array
    39.
    发明授权
    Close packed magnetic head linear array 失效
    封闭磁头线性阵列

    公开(公告)号：US5452165A

    公开(公告)日：1995-09-19

    申请号：US214902

    申请日：1994-03-16

    申请人： Mao-Min Chen ,  Kochan Ju ,  Mohamad T. Krounbi ,  Denny D. Tang ,  Po-Kang Wang

    发明人： Mao-Min Chen ,  Kochan Ju ,  Mohamad T. Krounbi ,  Denny D. Tang ,  Po-Kang Wang

    IPC分类号： G11B5/008 ,  G11B5/012 ,  G11B5/31 ,  G11B5/48 ,  G11B5/56 ,  G11B5/584 ,  G11B5/29

    CPC分类号： G11B5/3103 ,  G11B5/3183 ,  G11B5/4886 ,  G11B5/4893 ,  G11B5/56 ,  G11B5/584 ,  G11B5/00817 ,  G11B5/012

    摘要： The present invention includes a plurality of thin film magnetic heads which are arranged in a linear array with a spacing D between adjacent heads. The pole pieces of the magnetic heads are positioned in a side by side relationship in contrast to the normal pancake type of magnetic head. The linear array is angled at a skew angle .theta. with respect to the direction of travel of the magnetic medium. The track pitch is then D sin .theta.. The track width is substantially equal to the thickness of the pole tips P1T and P2T of the magnetic heads. This thickness can be in the order of 3 .mu.m. With such a pole tip thickness the track pitch of each magnetic head in the linear array can be 3-4 .mu.m. A plurality of narrow data tracks can then be provided with minimum pitch by a corresponding number of magnetic heads. The write signals are simultaneously fed to the heads or the read signals are simultaneously fed to the heads. This allows high data rates to be processed. The invention also provides different azimuth between adjacent heads to minimize cross talk between the tracks caused by track misregistration. Additional magnetic heads can be employed for servo control as needed.

    摘要翻译： 本发明包括多个薄膜磁头，其以相邻磁头之间的间隔D布置成线性阵列。 与正常的煎饼型磁头相反，磁头的极片与并排的关系定位。 线性阵列相对于磁性介质的行进方向以偏斜角θ成角度。 轨道间距为Dsinθ。 轨道宽度基本上等于磁头的极尖P1T和P2T的厚度。 该厚度可以在3μm左右。 具有这样的极尖厚度，线阵列中每个磁头的轨道间距可以是3-4μm。 然后可以通过相应数量的磁头以最小间距来提供多个窄数据轨道。 写入信号被同时馈送到头部，或者读取信号被同时馈送到头部。 这样可以处理高数据速率。 本发明还提供相邻头部之间的不同方位角，以最小化由轨道重合失调引起的轨道之间的串扰。 可根据需要使用额外的磁头进行伺服控制。