公开(公告)号：US20090050938A1

公开(公告)日：2009-02-26

申请号：US12185152

申请日：2008-08-04

申请人： Makoto Miyoshi ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Mitsuhiro Tanaka

IPC分类号： H01L29/778 ,  H01L21/336

CPC分类号： H01L29/7787 ,  H01L29/1033 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4232 ,  H01L29/517 ,  H01L29/66462

摘要： A normally-off operation type HEMT device excellent in characteristics can be realized. A two-dimensional electron gas region is formed in a periphery of a hetero-junction interface of a base layer and a barrier layer, so that access resistance in an access portion, that is, between a drain and a gate and between a gate and a source is sufficiently lowered, and at the same time, a P-type region is formed immediately under the gate. This realizes a normally-off type HEMT device having a low on-resistance. Further, when a film thickness of an insulating layer is defined as t (nm) and a relative permittivity of a substance forming the insulating layer is defined as k, a threshold voltage as high as +3 V or more can be attained by satisfying k/t≦0.85 (nm−1).

摘要翻译： 能够实现特性优异的常闭型HEMT装置。 二维电子气体区域形成在基底层和势垒层的异质结界面的周围，使得入射部分，即在漏极和栅极之间以及栅极和 源极充分降低，同时在栅极的正下方形成P型区域。 这实现了具有低导通电阻的常闭型HEMT装置。 此外，当将绝缘层的膜厚定义为t（nm），并且形成绝缘层的物质的相对介电常数定义为k时，可以通过满足k值来获得高达+3V或更高的阈值电压 /t<=0.85（nm-1）。

公开(公告)号：US20050274980A1

公开(公告)日：2005-12-15

申请号：US11151693

申请日：2005-06-13

申请人： Makoto Miyoshi

发明人： Makoto Miyoshi

IPC分类号： H01L29/20 ,  H01L29/205 ,  H01L29/778 ,  H01L31/072

CPC分类号： H01L29/7787 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/66469 ,  H01L29/7786

摘要： A semiconductor device includes an underlying layer made of a group-III nitride containing at least Al and formed on. a substrate, and a group of stacked semiconductor layers including a first semiconductor layer made of a group-III nitride, preferably GaN, a second semiconductor layer made of AlN and a third semiconductor layer made of a group-III nitride containing at least Al, preferably AlxGa1-xN where x≧0.2. The semiconductor device suppresses the reduction in electron mobility resulting from lattice defects and crystal lattice randomness. This achieves a HEMT device having a sheet carrier density of not less than 1×1013/cm2 and an electron mobility of not less than 20000 cm2/V·s at a temperature of 15 K.

摘要翻译： 半导体器件包括由至少包含Al并且形成在其上的III-III族氮化物制成的下层。 衬底和包括由III族氮化物制成的第一半导体层，优选GaN，由AlN制成的第二半导体层和由至少含有Al的III-III族氮化物制成的第三半导体层的堆叠半导体层组， 优选为Al x Ga 1-x N，其中x> = 0.2。 半导体器件抑制由晶格缺陷和晶格随机性引起的电子迁移率的降低。 这实现了具有不小于1×10 13 / cm 2的片载体密度的HEMT器件，并且电子迁移率不小于20000cm 2 / > / Vs。

公开(公告)号：US20050009221A1

公开(公告)日：2005-01-13

申请号：US10873767

申请日：2004-06-22

申请人： Makoto Miyoshi ,  Masahiro Sakai ,  Mitsuhiro Tanaka ,  Takashi Egawa ,  Hiroyasu Ishikawa

发明人： Makoto Miyoshi ,  Masahiro Sakai ,  Mitsuhiro Tanaka ,  Takashi Egawa ,  Hiroyasu Ishikawa

IPC分类号： C30B29/38 ,  C23C16/34 ,  C30B25/02 ,  C30B29/40 ,  H01L21/00 ,  H01L21/20 ,  H01L21/205

CPC分类号： C30B29/40 ,  C30B25/02 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262

摘要： A method for manufacturing a nitride film including a high-resistivity GaN layer includes a step of allowing a Group-III source gas containing an organic metal compound, a Group-V source gas containing ammonia, a carrier gas for the Group-III source gas, and a carrier gas for the Group-V source gas to flow over a predetermined monocrystalline wafer maintained at 1,000° C. or more and also includes a step of epitaxially growing a nitride film, including a GaN layer, on the monocrystalline wafer by a vapor phase reaction of the source gases. At least one of the carrier gases contains nitrogen while the wafer temperature is being increased before the reaction is carried out. At least one of the carrier gases contains hydrogen and nitrogen and has a total hydrogen and nitrogen content of 90 percent by volume or more in at least one part of the epitaxially growing step.

摘要翻译： 制造包括高电阻率GaN层的氮化物膜的方法包括以下步骤：允许含有有机金属化合物的III族源气体，含有氨的V族气体，用于III族源气体的载气 ，并且用于V族源气体的载气在保持在1000℃或更高的预定单晶晶片上流动，并且还包括在单晶晶片上外延生长包括GaN层的氮化物膜的步骤 源气体的气相反应。 在反应进行之前，至少一种载气含有氮，同时晶片温度升高。 至少一种载气含有氢和氮，并且在外延生长步骤的至少一部分中，总氢和氮的总含量为90体积％以上。

公开(公告)号：US4830130A

公开(公告)日：1989-05-16

申请号：US055149

申请日：1987-05-28

申请人： Makoto Miyoshi

发明人： Makoto Miyoshi

IPC分类号： B62D5/06 ,  B62D6/02

CPC分类号： B62D6/02 ,  B62D5/061

摘要： A power steering system for automotive vehicles includes devices for decreasing reaction force and for increasing assisting force applied to the steering wheel in cases where steering operation is performed while the vehicle is stopped. The device comprises a cut-off valve and a bias spring biasing the cut-off valve upwardly. The area of the upper surface of the cut-off valve is larger than that of the lower surface thereof. Therefore, the cut-off valve can move downwardly against the biasing force of the bias spring to block fluid communication between a fluid pressure source and chambers of a power cylinder when fluid pressure exceeding a predetermined value is applied to the upper and lower surfaces of the cut-off valve.

摘要翻译： 用于机动车辆的动力转向系统包括用于在车辆停止时执行转向操作的情况下用于减小反作用力并用于增加施加到方向盘的辅助力的装置。 该装置包括截止阀和向上偏压截止阀的偏压弹簧。 截止阀的上表面的面积大于其下表面的面积。 因此，当超过预定值的流体压力被施加到压力弹簧的上表面和下表面时，截止阀可以抵抗偏压弹簧的偏置力向下移动，以阻止流体压力源与动力缸的腔室之间的流体连通 截止阀。

公开(公告)号：US08872226B2

公开(公告)日：2014-10-28

申请号：US12884516

申请日：2010-09-17

申请人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mitsuhiro Tanaka

IPC分类号： H01L29/66

CPC分类号： H01L21/0262 ,  C30B19/00 ,  C30B23/02 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/7786

摘要： Provided is an epitaxial substrate having excellent two-dimensional electron gas characteristics and reduced internal stress due to strains. A channel layer is formed of a first group III nitride represented by Inx1Aly1Gaz1N (x1+y1+z1=1) so as to have a composition in a range determined by x1=0 and 0≦y1≦0.3. A barrier layer is formed of a second group III nitride represented by Inx2Aly2Gaz2N (x2+y2+z2=1) so as to have a composition, in a ternary phase diagram with InN, AlN and GaN being vertices, in a range surrounded by five straight lines determined in accordance with the composition (AlN molar fraction) of the first group III nitride.

摘要翻译： 提供了具有优异的二维电子气特性和由于应变引起的内部应力降低的外延基板。 沟道层由Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）表示的第一III族氮化物形成，以使得其组成在由x1 = 0和0＆lt; 1lE; y1＆nlE; 0.3确定的范围内。 阻挡层由Inx2Aly2Gaz2N（x2 + y2 + z2 = 1）表示的第二III族氮化物形成，以具有以InN，AlN和GaN为顶点的三元相图中的组成，包围在五个 根据第一III族氮化物的组成（AlN摩尔分数）确定的直线。

公开(公告)号：US08350290B2

公开(公告)日：2013-01-08

申请号：US12543706

申请日：2009-08-19

申请人： Makoto Miyoshi ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Mitsuhiro Tanaka

IPC分类号： H01L31/108 ,  H01L31/18

CPC分类号： H01L31/108 ,  H01L31/022408 ,  H01L31/186 ,  Y02E10/50 ,  Y02P70/521

摘要： Provided is a light-receiving device which has light-receiving sensitivity superior to that of a conventional Schottky diode type light-receiving device and also has sufficiently-strengthened junction of a Schottky electrode. A first contact layer formed of AlGaN and having conductivity, a light-receiving layer formed of AlGaN, and a second contact layer formed of AlN and having a thickness of 5 nm are epitaxially formed on a predetermined substrate in the stated order, and a second electrode is brought into Schottky junction with the second contact layer, to thereby form MIS junction. Further, after the Schottky junction, heat treatment is performed under a nitrogen gas atmosphere at 600° C. for 30 seconds.

摘要翻译： 提供一种光接收装置，其具有优于常规肖特基二极管型光接收装置的光接收灵敏度，并且还具有足够强的肖特基电极的结。 由AlGaN形成并具有导电性的第一接触层，由AlGaN形成的光接收层和由AlN形成的厚度为5nm的第二接触层按照所述顺序外延形成在预定基板上，第二接触层 电极与第二接触层进入肖特基结，从而形成MIS结。 此外，在肖特基结之后，在氮气气氛下在600℃下进行30秒的热处理。

公开(公告)号：US20120168771A1

公开(公告)日：2012-07-05

申请号：US13415066

申请日：2012-03-08

申请人： Makoto Miyoshi ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

IPC分类号： H01L29/778 ,  H01L21/335 ,  H01L29/205

CPC分类号： H01L29/7786 ,  H01L21/28581 ,  H01L29/2003 ,  H01L29/475 ,  H01L29/66462

摘要： A semiconductor device is provided such that a reverse leak current is suppressed, and a Schottky junction is reinforced. The semiconductor device includes an epitaxial substrate formed by laminating a group of group-III nitride layers on a base substrate in such a manner that (0001) surfaces of said group-III nitride layers are substantially parallel to a substrate surface, and a Schottky electrode, in which the epitaxial substrate includes a channel layer formed of a first group-III nitride having a composition of Inx1Aly1Gaz1N, a barrier layer formed of a second group-III nitride having a composition of Inx2Aly2N, and a contact layer formed of a third group-III nitride having insularity and adjacent to the barrier layer, and the Schottky electrode is connected to the contact layer. In addition, a heat treatment is performed under a nitrogen atmosphere after the gate electrode has been formed.

摘要翻译： 提供半导体器件，使得抑制反向泄漏电流，并且增强肖特基结。 半导体器件包括：外延衬底，其通过在基底衬底上层叠一组III族氮化物层而形成，使得所述III族氮化物层的（0001）表面基本上平行于衬底表面，并且肖特基电极 ，其中外延衬底包括由具有In x Al 1 Al 1 Ga z N 1的组成的第一III族氮化物形成的沟道层，由具有In x 2 Al 2 N的组成的第二III族氮化物形成的阻挡层和由第三组形成的接触层 -III氮化物与隔离层相邻，并且肖特基电极连接到接触层。 此外，在形成栅电极之后，在氮气氛下进行热处理。

公开(公告)号：US08192094B2

公开(公告)日：2012-06-05

申请号：US12458785

申请日：2009-07-22

申请人： Kazuya Sasaki ,  Makoto Miyoshi ,  Shinichi Aoki

发明人： Kazuya Sasaki ,  Makoto Miyoshi ,  Shinichi Aoki

IPC分类号： G02B6/36

CPC分类号： G02B6/423 ,  G02B6/3874

摘要： An optical module includes a housing including a groove part formed inside the housing; and a receptacle received in the housing, the receptacle to which an optical connector having an optical fiber is connected, the receptacle including a brim part and a stub part where the brim part is formed in a body. An elastic body is provided in the groove part, the groove part where the brim part is provided. The elastic body is configured to adhere to and hold the stub part.

摘要翻译： 光学模块包括壳体，壳体包括形成在壳体内部的凹槽部分; 以及容纳在所述壳体中的插座，连接有具有光纤的光学连接器的插座，所述插座包括边缘部分和所述边缘部分形成在主体中的短截线部分。 在槽部设置弹性体，设置有边缘部的槽部。 弹性体被构造成粘附并保持短截线部分。

公开(公告)号：US20100107969A1

公开(公告)日：2010-05-06

申请号：US12655826

申请日：2010-01-08

申请人： Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Makoto Miyoshi ,  Minoru Imaeda

发明人： Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Makoto Miyoshi ,  Minoru Imaeda

IPC分类号： C30B7/00

CPC分类号： C30B29/403 ,  C30B23/02 ,  C30B25/02 ,  C30B25/20 ,  C30B29/406

摘要： An underlying film 2 of a group III nitride is formed on a substrate 1 by vapor phase deposition. The substrate 1 and the underlying film 2 are subjected to heat treatment in the present of hydrogen to remove the underlying film 2 so that the surface of the substrate 1 is roughened. A seed crystal film 4 of a group III nitride single crystal is formed on a surface of a substrate 1A by vapor phase deposition. A group III nitride single crystal 5 is grown on the seed crystal film 4 by flux method.

摘要翻译： 通过气相沉积在衬底1上形成III族氮化物的底层膜2。 将基板1和下面的薄膜2在氢气中进行热处理以除去下面的薄膜2，从而使基底1的表面变粗糙。 通过气相沉积在基板1A的表面上形成III族氮化物单晶的晶种膜4。 通过助熔法在晶种膜4上生长III族氮化物单晶5。

公开(公告)号：US20090285536A1

公开(公告)日：2009-11-19

申请号：US12458785

申请日：2009-07-22

申请人： Kazuya Sakaki ,  Makoto Miyoshi ,  Shinichi Aoki

发明人： Kazuya Sakaki ,  Makoto Miyoshi ,  Shinichi Aoki

IPC分类号： G02B6/36

CPC分类号： G02B6/423 ,  G02B6/3874

摘要： An optical module includes a housing including a groove part formed inside the housing; and a receptacle received in the housing, the receptacle to which an optical connector having an optical fiber is connected, the receptacle including a brim part and a stub part where the brim part is formed in a body. An elastic body is provided in the groove part, the groove part where the brim part is provided. The elastic body is configured to adhere to and hold the stub part.

摘要翻译： 光学模块包括壳体，壳体包括形成在壳体内部的凹槽部分; 以及容纳在所述壳体中的插座，连接有具有光纤的光学连接器的插座，所述插座包括边缘部分和所述边缘部分形成在主体中的短截线部分。 在槽部设置弹性体，设置有边缘部的槽部。 弹性体被构造成粘附并保持短截线部分。