公开(公告)号：US07324493B2

公开(公告)日：2008-01-29

申请号：US10311915

申请日：2001-06-25

申请人： Toru Yamada ,  Tsutomu Matsumura ,  Toshio Ishizaki ,  Hiroyuki Nakamura ,  Kazuhide Uriu

发明人： Toru Yamada ,  Tsutomu Matsumura ,  Toshio Ishizaki ,  Hiroyuki Nakamura ,  Kazuhide Uriu

IPC分类号： H04B7/216

CPC分类号： H04B1/0057 ,  H01P1/15 ,  H04B1/005 ,  H04B1/006 ,  H04B1/406 ,  H04B1/44

摘要： A 3-frequency branching circuit in the past could not be used for a system wherein a TDMA method such as GSM and DCS and a W-CDMA method such as UMTS are mixed. The 3-frequency branching circuit equipped with branching means having first and second internal terminals, an antenna terminal of connecting to an antenna, a low-pass filter connected between the first internal terminal and the antenna terminal, and a high-pass filter connected between the second internal terminal and the antenna terminal, a switching circuit of switching between GSM TX and GSM RX, a switching circuit of switching between DCS TX, DCS RX and a third internal terminal, and a duplexer connected to the third internal terminal.

摘要翻译： 过去的3频分支电路不能用于其中诸如GSM和DCS的TDMA方法和诸如UMTS的W-CDMA方法的系统混合。 具有分支装置的3频分支电路具有第一和第二内部端子，连接到天线的天线端子，连接在第一内部端子和天线端子之间的低通滤波器以及连接在第一内部端子和天线端子之间的高通滤波器 第二内部终端和天线终端，在GSM TX和GSM RX之间切换的切换电路，在DCS TX，DCS RX和第三内部终端之间切换的切换电路以及连接到第三内部终端的双工器。

公开(公告)号：US20070170122A1

公开(公告)日：2007-07-26

申请号：US10588936

申请日：2005-02-15

申请人： Masanori Tabata ,  Masaru Chiyomaru ,  Makoto Susaki ,  Yukiko Shirakusa ,  Kazuhide Kamimura ,  Tetsuya Ito ,  Hiroyuki Nakamura

发明人： Masanori Tabata ,  Masaru Chiyomaru ,  Makoto Susaki ,  Yukiko Shirakusa ,  Kazuhide Kamimura ,  Tetsuya Ito ,  Hiroyuki Nakamura

IPC分类号： C02F1/32

CPC分类号： C02F9/00 ,  C02F1/283 ,  C02F1/32 ,  C02F1/66 ,  C02F1/72 ,  C02F1/722 ,  C02F2103/18

摘要： A wastewater treatment apparatus (10) that treats the wastewater containing persistent substances, according to the present invention, includes a wastewater treatment bath (12) for treating a wastewater (11), an oxidizing reagent adding unit (14) for adding an oxidizing reagent (13) in the wastewater treatment bath (12), and an alkaline reagent adding unit (16) for adding an alkaline reagent (15) in the wastewater treatment bath (12). By making the wastewater in the wastewater treatment bath (12) in the alkaline condition, it is possible to completely decompose the persistent substances in the wastewater by the oxidation treatment using an oxidizing reagent.

摘要翻译： 根据本发明的处理含有持久性物质的废水的废水处理装置（10）包括用于处理废水（11）的废水处理槽（12），用于添加氧化试剂的氧化剂添加单元（14） （13），以及用于在废水处理槽（12）中添加碱性试剂（15）的碱性试剂添加单元（16）。 通过在碱性条件下使废水处理槽（12）中的废水通过使用氧化剂的氧化处理完全分解废水中的持久性物质。

公开(公告)号：US20070148702A1

公开(公告)日：2007-06-28

申请号：US11683192

申请日：2007-03-07

申请人： Runa NAKAMURA ,  Hiroyuki Nakamura ,  Ryohei Nagata ,  Isao Karube ,  Hitoshi Muguruma

发明人： Runa NAKAMURA ,  Hiroyuki Nakamura ,  Ryohei Nagata ,  Isao Karube ,  Hitoshi Muguruma

IPC分类号： G01N33/53 ,  C12M1/34

CPC分类号： G01N21/553

摘要： An objective of the present invention is to provide a measuring chip for a surface plasmon resonance sensor that can detect a small amount of target substances in high sensitivity. The present invention provides a measuring chip for a surface plasmon resonance sensor comprising a metal layer, one or more plasma polymerization layers formed on said metal layer, and a biologically active substance immobilized on the surface of said plasma polymerization layer.

摘要翻译： 本发明的目的是提供一种能够以高灵敏度检测少量目标物质的表面等离子体共振传感器的测量芯片。 本发明提供了一种用于表面等离子体共振传感器的测量芯片，其包括金属层，在所述金属层上形成的一个或多个等离子体聚合层和固定在所述等离子体聚合层的表面上的生物活性物质。

公开(公告)号：US07235915B2

公开(公告)日：2007-06-26

申请号：US10991772

申请日：2004-11-18

申请人： Hiroyuki Nakamura ,  Keiji Onishi ,  Hiroshi Nakatsuka ,  Tomohiro Iwasaki

发明人： Hiroyuki Nakamura ,  Keiji Onishi ,  Hiroshi Nakatsuka ,  Tomohiro Iwasaki

IPC分类号： H01L41/04 ,  H01L41/08

CPC分类号： H03H9/586 ,  H03H9/587 ,  H03H9/589

摘要： An acoustic resonator device includes a substrate, a first acoustic resonator and a second acoustic resonator. The first acoustic resonator is formed on the substrate, and has a first upper electrode, a first piezoelectric layer, and a first lower electrode layer, and resonates in a λ/4 mode at a first resonant frequency. The second acoustic resonator is formed on the substrate, and has a second upper electrode layer, a second piezoelectric layer, and a second lower electrode layer, and resonates in a λ/2 mode at a second resonant frequency different from the first frequency. In the acoustic resonator device, materials and thicknesses of the first lower electrode layer and the second lower electrode layer are common and substantially equal, and materials and thicknesses of the first piezoelectric layer and the second piezoelectric layer are common and substantially equal.

摘要翻译： 声谐振器装置包括基板，第一声谐振器和第二声谐振器。 第一声​​谐振器形成在基板上，并且具有第一上电极，第一压电层和第一下电极层，并以λ/ 4模式以第一谐振频率谐振。 第二声谐振器形成在基板上，并且具有第二上电极层，第二压电层和第二下电极层，并且以不同于第一频率的第二谐振频率以λ/ 2模式谐振。 在声谐振器装置中，第一下电极层和第二下电极层的材料和厚度是共同的并且基本上相等，并且第一压电层和第二压电层的材料和厚度是共同的并且基本相等。

公开(公告)号：US07224240B2

公开(公告)日：2007-05-29

申请号：US11078793

申请日：2005-03-11

申请人： Hiroyuki Nakamura ,  Toshifumi Nakatani ,  Toshio Ishizaki

发明人： Hiroyuki Nakamura ,  Toshifumi Nakatani ,  Toshio Ishizaki

IPC分类号： H03H9/68 ,  H03H7/42

CPC分类号： H03H9/0042 ,  H03H7/42 ,  H03H9/0038 ,  H03H9/14588

摘要： With an antenna duplexer having balanced terminals, there has been a problem that the amount of leakage of common-mode signal components in the balanced terminals is large. A balanced high-frequency filter designed to solve this problem comprises a balanced high-frequency element and a phase-shifting circuit which includes a transmission line and placed between output terminals, and which is series resonance circuit having a length set to λT/2 (λT: the wavelength at a frequency in a transmission frequency band) and capable of resonating with common-mode signal components at a predetermined frequency.

摘要翻译： 对于具有平衡端子的天线双工器，存在平衡端子中的共模信号分量的泄漏量大的问题。 设计用于解决这个问题的平衡式高频滤波器包括一个平衡的高频元件和一个包括传输线并置于输出端之间的移相电路，并且是串联谐振电路，其长度设定为λ< Tλ/ 2（λT是发送频带中的频率处的波长），并且能够以预定频率与共模信号分量谐振。

公开(公告)号：US07224105B2

公开(公告)日：2007-05-29

申请号：US10990435

申请日：2004-11-18

申请人： Keiji Onishi ,  Hiroyuki Nakamura ,  Hiroshi Nakatsuka

发明人： Keiji Onishi ,  Hiroyuki Nakamura ,  Hiroshi Nakatsuka

IPC分类号： H01L41/047

CPC分类号： H03H9/175 ,  H03H9/02094 ,  H03H9/02118 ,  H03H9/173 ,  H03H9/174 ,  H03H9/587 ,  H03H9/588 ,  H03H9/589

摘要： A piezoelectric element of the present invention includes a substrate, a lower electrode layer, a piezoelectric layer, an upper electrode layer, a cavity portion formed below a piezoelectric vibrating portion, and at least two bridging portions. The at least two bridging portions are formed so as not to be line-symmetric with respect to any line segment traversing the piezoelectric vibrating portion and/or so as not to be point-symmetric with respect to any point in the piezoelectric vibrating portion in a projection of the piezoelectric vibrating portion in the laminating direction.

摘要翻译： 本发明的压电元件包括​​基板，下电极层，压电层，上电极层，形成在压电振动部下方的空腔部，以及至少两个桥接部。 所述至少两个桥接部形成为相对于穿过所述压电振动部的任何线段并且/或者相对于所述压电振动部中的任何点而言不对称对称 压电振动部在层叠方向上的突出。

公开(公告)号：US07220617B2

公开(公告)日：2007-05-22

申请号：US11349219

申请日：2006-02-08

申请人： Hidemasa Kagii ,  Akira Muto ,  Ichio Shimizu ,  Katsuo Arai ,  Hiroshi Sato ,  Hiroyuki Nakamura ,  Masahiko Osaka ,  Takuya Nakajo ,  Keiichi Okawa ,  Hiroi Oka

发明人： Hidemasa Kagii ,  Akira Muto ,  Ichio Shimizu ,  Katsuo Arai ,  Hiroshi Sato ,  Hiroyuki Nakamura ,  Masahiko Osaka ,  Takuya Nakajo ,  Keiichi Okawa ,  Hiroi Oka

IPC分类号： H01L21/44 ,  H01L21/48

CPC分类号： H01L23/24 ,  H01L21/52 ,  H01L23/488 ,  H01L23/49562 ,  H01L24/36 ,  H01L24/40 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/16 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/40225 ,  H01L2224/73153 ,  H01L2224/73253 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor chip is sealed by resin without covering an outer terminal of a semiconductor device having a power transistor. A semiconductor chip having a power transistor is housed within a recess of a metal cap while a drain electrode on a first surface of the semiconductor chip is bonded to a bottom of the recess via a connection material. A gate electrode and a source electrode are formed on a second surface opposite to the first surface of the semiconductor chip, and the gate electrode and the source electrode are bonded with metal plate terminals. In addition, the semiconductor chip is sealed by a resin sealing body with mounting-surfaces of the metal plate terminals being exposed. Mounting surfaces of the metal plate terminals and a third part of the metal cap are bonded to electrodes on a mounting board.

摘要翻译： 半导体芯片由树脂密封而不覆盖具有功率晶体管的半导体器件的外部端子。 具有功率晶体管的半导体芯片容纳在金属盖的凹部内，而半导体芯片的第一表面上的漏电极经由连接材料接合到凹部的底部。 在与半导体芯片的第一表面相对的第二表面上形成栅电极和源电极，并且栅极电极和源极电极与金属板端子接合。 此外，半导体芯片被树脂密封体密封，金属板端子的安装表面露出。 金属板端子和金属盖的第三部分的安装表面与安装板上的电极接合。

公开(公告)号：US20070109073A1

公开(公告)日：2007-05-17

申请号：US11582425

申请日：2006-10-18

申请人： Takehiko Yamakawa ,  Hiroshi Yamaguchi ,  Hiroshi Nakatsuka ,  Hiroyuki Nakamura ,  Keiji Onishi ,  Toshio Ishizaki

发明人： Takehiko Yamakawa ,  Hiroshi Yamaguchi ,  Hiroshi Nakatsuka ,  Hiroyuki Nakamura ,  Keiji Onishi ,  Toshio Ishizaki

IPC分类号： H03H9/70 ,  H03H9/58

CPC分类号： H03H9/605 ,  H03H9/25 ,  H03H9/542 ,  H03H9/6483 ,  H03H9/6493

摘要： A series piezoelectric resonator 11 is connected in series between an input terminal 15a and an output terminal 15b. A first electrode of a parallel piezoelectric resonator 12a is connected to a connection point between the input terminal 15a and the series piezoelectric resonator 11, and a second electrode of the parallel piezoelectric resonator 12a is connected to a first terminal of an inductor 13a. A first electrode of a parallel piezoelectric resonator 12b is connected to a connection point between the series piezoelectric resonator 11 and the output terminal 15b, and a second electrode of the parallel piezoelectric resonator 12b is connected to a first terminal of an inductor 13b. Second terminals of the inductors 13a and 13b are grounded. An additional piezoelectric resonator 14 is connected between the second electrode of the parallel piezoelectric resonator 12a and the second electrode of the parallel piezoelectric resonator 12b.

摘要翻译： 串联压电谐振器11串联连接在输入端子15a和输出端子15b之间。 平行压电谐振器12a的第一电极连接到输入端子15a和串联压电谐振器11之间的连接点，并联压电谐振器的第二电极连接到电感器13的第一端子 一个。 平行压电谐振器12b的第一电极连接到串联压电谐振器11和输出端子15b之间的连接点，并联压电谐振器12b的第二电极连接到电感器13的第一端子 b。 电感器13a和13b的第二端接地。 并联压电谐振器12a的第二电极和并联压电谐振器12b的第二电极之间连接有一个附加的压电谐振器14。

公开(公告)号：US20070001781A1

公开(公告)日：2007-01-04

申请号：US11488148

申请日：2006-07-18

申请人： Hiroshi Nakatsuka ,  Keiji Onishi ,  Hiroyuki Nakamura ,  Takehiko Yamakawa ,  Hiroshi Yamaguchi

发明人： Hiroshi Nakatsuka ,  Keiji Onishi ,  Hiroyuki Nakamura ,  Takehiko Yamakawa ,  Hiroshi Yamaguchi

IPC分类号： H03H9/70 ,  H03H9/54

CPC分类号： H03H3/04 ,  H03H9/0211 ,  H03H9/173 ,  Y10T29/42

摘要： A piezoeletric resonator includes: a substrate; a lower electrode formed on or above the substrate; a piezoeletric body formed on or above the lower electrode; an upper electrode formed on or above the piezoeletric body; and a cavity under a vibrating portion formed by the lower electrode, the piezoeletric body, and the upper electrode. Where a resonant frequency of vibration with a thickness of the vibrating portion being a half of a wavelength is taken as fr, an average of ultrasonic velocity in a material forming the cavity is taken as Vc, and a value determined based on the resonant frequency fr and the average of ultrasonic velocity Vc is taken as λc (=Vc/fr), a depth of the cavity is set so as to be equal to or larger than n×λc/2−λc/8 and equal to or smaller than n×λc/2+λc/8.

摘要翻译： 压电谐振器包括：基板; 形成在基板上或上方的下电极; 形成在下电极上或上的压电体; 形成在压电体上或上的上电极; 以及由下电极，压电体和上电极形成的振动部下的空腔。 其中振动部分的厚度为波长的一半的振动的共振频率为fr，将形成空腔的材料中的超声速度的平均值作为Vc，并且基于谐振频率fr确定的值 超声波速度Vc的平均值为lambdac（= Vc / fr），空腔的深度设定为等于或大于n×lambdac / 2-lambdac / 8且等于或小于nxlambdac / 2 + lambdac / 8。

公开(公告)号：US20060220763A1

公开(公告)日：2006-10-05

申请号：US10552582

申请日：2005-03-31

申请人： Tomohiro Iwasaki ,  Hiroshi Nakatsuka ,  Keiji Onishi ,  Hiroyuki Nakamura

发明人： Tomohiro Iwasaki ,  Hiroshi Nakatsuka ,  Keiji Onishi ,  Hiroyuki Nakamura

IPC分类号： H03H9/00

CPC分类号： H03H9/175 ,  H03H9/02157

摘要： A thin film bulk acoustic resonator (507b) comprises a substrate (101b), an acoustic mirror layer (508b) provided on the substrate (101b), including a plurality of impedance layers (502b, 503b) alternatively having a high acoustic impedance and a low acoustic impedance, and a piezoelectric thin film vibrator (509b) provided on the acoustic mirror layer (508b), including a lower electrode (504b), a piezoelectric thin film (105b) and an upper electrode (506b). The sum of a thickness of the lower electrode (504b) and a thickness of the upper electrode (506b) is 5% or more and 60% or less of a whole thickness of the piezoelectric thin film vibrator (509b), and the thickness of the lower electrode (504b) is larger than the thickness of the upper electrode (506b).

摘要翻译： 薄膜体声波谐振器（507b）包括衬底（101b），设置在衬底（101b）上的声镜层（508b）），包括多个阻抗层（502b，503b），交替地具有 高声阻抗和低声阻抗，以及设置在声镜层（508b）上的压电薄膜振子（509b），包括下电极（504b），压电薄膜（105b）和 上电极（506b）。 下部电极（504b）的厚度与上部电极（506b）的厚度之和为压电薄膜振子（509b）的整体厚度的5％以上且60％以下， 下电极（504b）的厚度大于上电极（506b）的厚度。