公开(公告)号：US08945950B2

公开(公告)日：2015-02-03

申请号：US14037064

申请日：2013-09-25

Applicant: Micron Technology, Inc.

Inventor： Jun Liu ,  Gurtej Sandhu

IPC: H01L21/00 ,  H01L29/66 ,  G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  H01L29/66007 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic cell structure including a nonmagnetic bridge, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, and a nonmagnetic bridge electrically connecting the free layer and the pinned layer. The shape and/or configuration of the nonmagnetic bridge directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer of the structure is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.

Abstract translation: 提供包括非磁性桥的磁性单元结构以及制造该结构的方法。 磁性电池结构包括自由层，钉扎层和电连接自由层和钉扎层的非磁性桥。 非磁性桥的形状和/或构造使编程电流通过磁性单元结构，使得结构自由层中编程电流的横截面面积小于结构的横截面。 自由层中编程电流的横截面积的减小使编程电流能够达到自由层中的关键开关电流密度并切换自由层的磁化，对磁性单元进行编程。

公开(公告)号：US20150024602A1

公开(公告)日：2015-01-22

申请号：US14502818

申请日：2014-09-30

Applicant: MICRON TECHNOLOGY, INC

Inventor： Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

IPC: H01L21/308 ,  H01L21/768

CPC classification number: H01L21/3088 ,  H01L21/0337 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/76802 ,  H01L27/1052

Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.

Abstract translation: 使用多个间距倍数的间隔物来形成具有特别小的临界尺寸的特征的掩模图案。 去除每对间隔件形成的心轴中的一个，并且由两个相互选择性可蚀刻的材料形成的交替层围绕剩余的间隔物沉积。 然后蚀刻由一种材料形成的层，留下由形成掩模图案的另一种材料形成的垂直延伸层。 或者，代替沉积交替的层，非晶碳沉积在剩余的间隔物周围，随后在无定形碳上形成成对隔离物的多个循环，去除一对隔离物之一并沉积无定形碳层。 可以重复循环以形成所需的图案。 由于图案中的某些特征的临界尺寸可以通过控制间隔物之间​​的间隔的宽度来设定，所以可以形成特别小的掩模特征。

公开(公告)号：US08861978B2

公开(公告)日：2014-10-14

申请号：US14220316

申请日：2014-03-20

Applicant: Micron Technology, Inc.

Inventor： Roy Meade ,  Gurtej Sandhu

IPC: H04B10/50 ,  H04Q11/00 ,  H04J14/02

CPC classification number: H04Q11/0005 ,  H04B10/506 ,  H04J14/02

Abstract: A wave division multiplexing (WDM) system is disclosed which accommodates shifts in the resonant frequency of optical modulators by using at least two carriers per optical communications channel and at least two resonant modulator circuits respectively associated with the carriers within each optical modulator. A first resonant modulator circuit resonates with a first carrier and a second resonates with a second carrier when there is a shift in resonance frequency of the at least two resonant optical modulator circuits. A switch circuit controls which carrier is being modulated by its respective resonant modulator circuit.

Abstract translation: 公开了一种波分复用（WDM）系统，其通过使用每个光通信信道中的至少两个载波和分别与每个光调制器内的载波相关联的至少两个谐振调制器电路来适应光调制器的谐振频率的偏移。 当至少两个谐振光调制器电路的谐振频率发生偏移时，第一谐振调制器电路与第一载波谐振，而第二谐振调制器电路与第二载波谐振。 开关电路控制哪个载波被其相应的谐振调制器电路调制。

公开(公告)号：US08853682B2

公开(公告)日：2014-10-07

申请号：US14185094

申请日：2014-02-20

Applicant: Micron Technology, Inc.

Inventor： Neil Greeley ,  Gurtej Sandhu ,  John Smythe ,  Bhaskar Srinivasan

IPC: H01L29/06 ,  H01L45/00 ,  H01L27/24

CPC classification number: H01L27/2481 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/165 ,  H01L45/1658 ,  H01L45/1683

Abstract: Self-aligning fabrication methods for forming memory access devices comprising a doped chalcogenide material. The methods may be used for forming three-dimensionally stacked cross point memory arrays. The method includes forming an insulating material over a first conductive electrode, patterning the insulating material to form vias that expose portions of the first conductive electrode, forming a memory access device within the vias of the insulating material and forming a memory element over the memory access device, wherein data stored in the memory element is accessible via the memory access device. The memory access device is formed of a doped chalcogenide material and formed using a self-aligned fabrication method.

Abstract translation: 用于形成包含掺杂的硫族化物材料的存储器存取装置的自对准制造方法。 该方法可用于形成三维堆叠的交叉点存储器阵列。 该方法包括在第一导电电极上形成绝缘材料，图案化绝缘材料以形成暴露第一导电电极的部分的通孔，在绝缘材料的通孔内形成存储器访问装置，并在存储器访问上形成存储元件 设备，其中存储在所述存储器元件中的数据可经由所述存储器访问设备访问。 存储器存取装置由掺杂的硫族化物材料形成，并使用自对准制造方法形成。

公开(公告)号：US08796806B2

公开(公告)日：2014-08-05

申请号：US13929094

申请日：2013-06-27

Applicant: Micron Technology, Inc.

Inventor： Gurtej Sandhu ,  Bhaskar Srinivasan

IPC: H01L31/058 ,  H01L29/06

CPC classification number: H01L29/24 ,  H01L27/24 ,  H01L45/00

Abstract: A diode and memory device including the diode, where the diode includes a conductive portion and another portion formed of a first material that has characteristics allowing a first decrease in a resistivity of the material upon application of a voltage to the material, thereby allowing current to flow there through, and has further characteristics allowing a second decrease in the resistivity of the first material in response to an increase in temperature of the first material.

Abstract translation: 包括二极管的二极管和存储器件，其中二极管包括导电部分和由第一材料形成的另一部分，该第一材料具有允许在向材料施加电压时第一次降低材料的电阻率的特性，从而允许电流 流过其中，并且具有允许第一材料的电阻率响应于第一材料的温度升高而第二次降低的特征。

公开(公告)号：US20140185983A1

公开(公告)日：2014-07-03

申请号：US13732557

申请日：2013-01-02

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Gurtej Sandhu ,  Roy Meade ,  Lei Bi ,  John Smythe

IPC: G02B6/32

CPC classification number: G02B6/4226 ,  G02B6/30 ,  G02B6/32 ,  G02B6/4204 ,  G02B6/4206 ,  G02B6/4225 ,  G02B6/4227 ,  G02B6/4239 ,  Y10T29/42 ,  Y10T29/49

Abstract: A structure for optically aligning an optical fiber to a photonic device and method of fabrication of same. The structure optically aligns an optical fiber to the photonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.

Abstract translation: 用于将光纤与光子器件光学对准的结构及其制造方法。 该结构将光纤与光子器件光学对准，使用透镜之间的两个可由致动器头移动的透镜。 透镜可以通过与致动器头相关联的相应的动力源移动。

公开(公告)号：US08767454B2

公开(公告)日：2014-07-01

申请号：US13673141

申请日：2012-11-09

Applicant: Micron Technology, Inc.

Inventor： Jun Liu ,  Gurtej Sandhu

IPC: G11C11/16 ,  H01L29/82 ,  H01L21/8246

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/329 ,  H01F41/306 ,  H01F41/307 ,  H01L27/228 ,  Y10S977/70

Abstract: A magnetic cell structure including a nonmagnetic filament contact, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, an insulative layer between the free and pinned layers, and a nonmagnetic filament contact in the insulative layer which electrically connects the free and pinned layers. The nonmagnetic filament contact is formed from a nonmagnetic source layer, also between the free and pinned layers. The filament contact directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.

Abstract translation: 提供包括非磁性细丝接触的磁性单元结构以及制造该结构的方法。 磁性单元结构包括自由层，钉扎层，自由层和被钉扎层之间的绝缘层，以及绝缘层中的非磁性细丝接触，其电连接自由层和被钉扎层。 非磁性细丝接触由非磁性源层形成，也在自由层和被钉扎层之间。 灯丝接触引导编程电流通过磁性电池结构，使得自由层中编程电流的横截面面积小于结构的横截面。 自由层中编程电流的横截面积的减小使编程电流能够达到自由层中的关键开关电流密度并切换自由层的磁化，对磁性单元进行编程。

公开(公告)号：US20140175596A1

公开(公告)日：2014-06-26

申请号：US14151083

申请日：2014-01-09

Applicant: Micron Technology, Inc.

Inventor： Roy Meade ,  Gurtej Sandhu

IPC: H01L21/762 ,  H01L29/06

CPC classification number: H01L21/76229 ,  G02B6/1225 ,  G02B6/13 ,  G02B6/136 ,  G02B2006/121 ,  H01L21/3086 ,  H01L21/76232 ,  H01L21/76283 ,  H01L27/092 ,  H01L27/14689 ,  H01L29/0649

Abstract: A method of forming a substrate with isolation areas suitable for integration of electronic and photonic devices is provided. A common reticle and photolithographic technique is used to fabricate a mask defining openings for etching first and second trench isolation areas in a substrate, with the openings for the second trench isolation areas being wider than the openings for the first trench isolation areas. The first and second trench isolation areas are etched in the substrate through the mask. The second trench isolation areas are further etched to the deeper than the first trench isolation areas. The trench isolation areas are filled with oxide material. Electrical devices can be formed on the substrate and electrically isolated by the first trench isolation areas and photonic devices can be formed over the second trench isolation areas and be optically isolated from the substrate.

公开(公告)号：US20130064011A1

公开(公告)日：2013-03-14

申请号：US13673130

申请日：2012-11-09

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jun Liu ,  Steve Kramer ,  Gurtej Sandhu

IPC: G11C11/16 ,  H01L21/8246 ,  G11C11/14 ,  H01L29/82

CPC classification number: G11C11/161 ,  G11C11/16 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

Abstract: A magnetic memory cell including a piezoelectric material, and methods of operating the memory cell are provided. The memory cell includes a stack, and the piezoelectric material may be formed as a layer in the stack or adjacent the layers of the cell stack. The piezoelectric material may be used to induce a transient stress during programming of the memory cell to reduce the critical switching current of the memory cell.

Abstract translation: 提供了包括压电材料的磁存储单元和操作存储单元的方法。 存储单元包括堆叠，并且压电材料可以形成为堆叠中的层或邻近电池堆的层。 压电材料可以用于在编程存储器单元期间引起瞬态应力以减小存储器单元的关键开关电流。

公开(公告)号：US20130064010A1

公开(公告)日：2013-03-14

申请号：US13673141

申请日：2012-11-09

Applicant: Micron Technology, Inc.

Inventor： Jun Liu ,  Gurtej Sandhu

IPC: G11C11/16 ,  H01L29/82 ,  H01L21/8246

CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/329 ,  H01F41/306 ,  H01F41/307 ,  H01L27/228 ,  Y10S977/70

Abstract: A magnetic cell structure including a nonmagnetic filament contact, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, an insulative layer between the free and pinned layers, and a nonmagnetic filament contact in the insulative layer which electrically connects the free and pinned layers. The nonmagnetic filament contact is formed from a nonmagnetic source layer, also between the free and pinned layers. The filament contact directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.

Abstract translation: 提供包括非磁性细丝接触的磁性单元结构以及制造该结构的方法。 磁性单元结构包括自由层，钉扎层，自由层和被钉扎层之间的绝缘层，以及绝缘层中的非磁性细丝接触，其电连接自由层和被钉扎层。 非磁性细丝接触由非磁性源层形成，也在自由层和被钉扎层之间。 灯丝接触引导编程电流通过磁性电池结构，使得自由层中编程电流的横截面面积小于结构的横截面。 自由层中编程电流的横截面积的减小使编程电流能够达到自由层中的关键开关电流密度并切换自由层的磁化，对磁性单元进行编程。