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    METHODS FOR DEPOSITING SILICON FILMS BY ATOMIC LAYER DEPOSITION
    31.
    发明申请
    METHODS FOR DEPOSITING SILICON FILMS BY ATOMIC LAYER DEPOSITION 有权

    公开(公告)号：US20240425983A1

    公开(公告)日：2024-12-26

    申请号：US18680975

    申请日：2024-05-31

    Applicant: Micron Technology, Inc.

    Inventor： Jean-Sebastien Materne Lehn ,  Francois H. Fabreguette ,  Timothy A. Quick

    IPC: C23C16/455 ,  C23C16/24

    Abstract: Methods, systems, and devices for methods for depositing silicon films by atomic layer deposition are described. For instance, a device may expose a base material (e.g., multiple stacks of materials) to a first precursor to form a silicon compound on the base material, the first precursor including a silicon amidinate. The device may react a second precursor with the silicon compound and may form a layer of silicon on the base material based on exposing the base material to the first precursor and reacting the second precursor with the silicon compound.

    Dielectric Materials, Capacitors and Memory Arrays
    32.
    发明申请
    Dielectric Materials, Capacitors and Memory Arrays 有权

    公开(公告)号：US20220344451A1

    公开(公告)日：2022-10-27

    申请号：US17236865

    申请日：2021-04-21

    Applicant: Micron Technology, Inc.

    Inventor： Richard Beeler ,  Matthew N. Rocklein ,  Timothy A. Quick ,  An-Jen B. Cheng ,  Sumeet C. Pandey

    IPC: H01L49/02 ,  H01L27/108

    Abstract: Some embodiments include dielectric material having a first region containing HfO and having a second region containing ZrO, where the chemical formulas indicate primary constituents rather than specific stoichiometries. The first region contains substantially no Zr, and the second region contains substantially no Hf. Some embodiments include capacitors having a first electrode, a second electrode, and a dielectric material between the first and second electrodes. The dielectric material includes one or more first regions and one or more second regions. The first region(s) contain(s) Hf and substantially no Zr. The second region(s) contain(s) Zr and substantially no Hf. Some embodiments include memory arrays.

    Methods of forming an apparatus for making semiconductor dieves
    33.
    发明授权
    Methods of forming an apparatus for making semiconductor dieves 有权

    公开(公告)号：US10930548B2

    公开(公告)日：2021-02-23

    申请号：US16250778

    申请日：2019-01-17

    Applicant: Micron Technology, Inc.

    Inventor： Shane J. Trapp ,  Timothy A. Quick ,  Byeung Chul Kim

    IPC: H01L21/768 ,  H01L21/308 ,  H01L21/02 ,  H01L21/3065

    Abstract: A method of forming an apparatus comprises conformally forming a spacer material over and between structures overlying a base structure. A liner material is conformally formed on the spacer material. The spacer material is selectively etchable relative to the liner material through exposure to at least one etchant. Portions of the liner material and the spacer material overlying upper surfaces of the structures and upper surfaces of the base structure horizontally between the structures are selectively removed to form spacer structures flanking side surfaces of the structures. An apparatus and an electronic system are also described.

    METHODS OF FORMING AN APPARATUS, AND RELATED APPARATUSES AND ELECTRONIC SYSTEMS
    34.
    发明申请
    METHODS OF FORMING AN APPARATUS, AND RELATED APPARATUSES AND ELECTRONIC SYSTEMS 审中-公开

    公开(公告)号：US20200235004A1

    公开(公告)日：2020-07-23

    申请号：US16250778

    申请日：2019-01-17

    Applicant: Micron Technology, Inc.

    Inventor： Shane J. Trapp ,  Timothy A. Quick ,  Byeung Chul Kim

    IPC: H01L21/768 ,  H01L21/308 ,  H01L21/3065 ,  H01L21/02

    Abstract: A method of forming an apparatus comprises conformally forming a spacer material over and between structures overlying a base structure. A liner material is conformally formed on the spacer material. The spacer material is selectively etchable relative to the liner material through exposure to at least one etchant. Portions of the liner material and the spacer material overlying upper surfaces of the structures and upper surfaces of the base structure horizontally between the structures are selectively removed to form spacer structures flanking side surfaces of the structures. An apparatus and an electronic system are also described.

    Semiconductor device structures including metal oxide structures
    38.
    发明授权
    Semiconductor device structures including metal oxide structures 有权
    包括金属氧化物结构的半导体器件结构

    公开(公告)号：US09276059B2

    公开(公告)日：2016-03-01

    申请号：US14176574

    申请日：2014-02-10

    Applicant: Micron Technology, Inc.

    Inventor： Dan B. Millward ,  Timothy A. Quick ,  J. Neil Greeley

    IPC: H01L23/58 ,  H01L29/06 ,  B82Y10/00 ,  B82Y40/00 ,  C08L53/00 ,  C09D153/00 ,  G03F7/00 ,  H01L21/28

    CPC classification number: H01L21/0271 ,  B82Y10/00 ,  B82Y40/00 ,  C08L53/00 ,  C08L53/005 ,  C09D153/00 ,  C09D153/005 ,  G03F7/0002 ,  H01L21/02323 ,  H01L21/28 ,  H01L29/06 ,  Y10S438/947 ,  Y10S977/888 ,  Y10S977/89 ,  C08L2666/02

    Abstract: Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the at least one soluble block laterally aligned with the trench and positioned within a matrix of the at least one insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor that impregnates the at least one soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface. Semiconductor device structures are also described.

    Abstract translation: 使用配制用于自组装的嵌段共聚物体系形成金属氧化物结构的方法和在基材上形成金属氧化物图案的方法。 至少在衬底中的沟槽内并且包括至少一个可溶性嵌段和至少一个不溶性嵌段的嵌段共聚物可以被退火以形成自组装图案，其包括多个重复单元，所述重复单元与至少一个可溶嵌段的重复单元横向对准 并且定位在所述至少一个不溶性块的基质内。 自组装图案可以暴露于浸渍至少一个可溶性嵌段的金属氧化物前体。 金属氧化物前体可以被氧化以形成金属氧化物。 可以去除自组装图案以在衬底表面上形成金属氧化物线的图案。 还描述了半导体器件结构。

    Resistive random access memory devices, and related semiconductor device structures
    39.
    发明授权
    Resistive random access memory devices, and related semiconductor device structures 有权
    电阻式随机存取存储器件及相关的半导体器件结构

    公开(公告)号：US09130164B2

    公开(公告)日：2015-09-08

    申请号：US14168592

    申请日：2014-01-30

    Applicant: Micron Technology, Inc.

    Inventor： Timothy A. Quick

    IPC: H01L29/66 ,  H01L45/00 ,  H01L27/24 ,  H01L21/336 ,  H01L21/00 ,  H01L21/425 ,  H01L31/032

    CPC classification number: H01L45/142 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1616 ,  H01L45/1683

    Abstract: A method of forming a chalcogenide material on a surface of a substrate comprising exposing a surface of a substrate to ionized gas clusters from a source gas, the ionized gas clusters comprising at least one chalcogen and at least one electropositive element. A method of forming a resistive random access memory device is also disclosed. The method comprises forming a plurality of memory cells wherein each cell of the plurality of memory cells is formed by forming a metal on a first electrode, forming a chalcogenide material on the metal by a gas cluster ion beam process, and forming a second electrode on the chalcogenide material. A method of forming another resistive random access memory device and a random access memory device including the chalcogenide material are also disclosed.

    Abstract translation: 一种在衬底的表面上形成硫族化物材料的方法，包括将基底的表面暴露于源气体的离子化气体簇，所述离子化气体簇包含至少一个硫属元素和至少一个正电荷元素。 还公开了一种形成电阻随机存取存储器件的方法。 该方法包括形成多个存储单元，其中多个存储单元中的每个单元通过在第一电极上形成金属而形成，通过气体簇离子束工艺在金属上形成硫族化物材料，并且形成第二电极 硫族化物材料。 还公开了形成另一个电阻性随机存取存储器件和包括硫族化物材料的随机存取存储器件的方法。

    Methods of forming a metal telluride material, related methods of forming a semiconductor device structure, and related semiconductor device structures
    40.
    发明授权
    Methods of forming a metal telluride material, related methods of forming a semiconductor device structure, and related semiconductor device structures 有权
    形成金属碲化物材料的方法，形成半导体器件结构的相关方法以及相关的半导体器件结构

    公开(公告)号：US09029856B2

    公开(公告)日：2015-05-12

    申请号：US14252959

    申请日：2014-04-15

    Applicant: Micron Technology, Inc.

    Inventor： Timothy A. Quick ,  Stefan Uhlenbrock ,  Eugene P Marsh

    IPC: H01L29/04 ,  H01L31/20 ,  H01L31/036 ,  H01L31/0376 ,  H01L21/02 ,  H01L31/032 ,  C23C16/30 ,  C23C16/455

    CPC classification number: H01L21/02568 ,  C23C16/305 ,  C23C16/45525 ,  H01L21/0237 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02614 ,  H01L21/0262 ,  H01L31/0324

    Abstract: Accordingly, a method of forming a metal chalcogenide material may comprise introducing at least one metal precursor and at least one chalcogen precursor into a chamber comprising a substrate, the at least one metal precursor comprising an amine or imine compound of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid, and the at least one chalcogen precursor comprising a hydride, alkyl, or aryl compound of sulfur, selenium, or tellurium. The at least one metal precursor and the at least one chalcogen precursor may be reacted to form a metal chalcogenide material over the substrate. A method of forming a metal telluride material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.

    Abstract translation: 因此，形成金属硫族化物材料的方法可以包括将至少一种金属前体和至少一种硫属前体引入包含基底的室中，所述至少一种金属前体包含碱金属的胺或亚胺化合物，碱 土金属，过渡金属，后过渡金属或准金属，以及所述至少一种硫族元素前体包含硫，硒或碲的氢化物，烷基或芳基化合物。 所述至少一种金属前体和所述至少一种硫属前体可以反应以在所述基底上形成金属硫族化物材料。 还描述了形成金属碲化物材料的方法，形成半导体器件结构的方法和半导体器件结构。

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