公开(公告)号：US20130003769A1

公开(公告)日：2013-01-03

申请号：US13431043

申请日：2012-03-27

申请人： Tetsuya Kumano ,  Masaki Ueno ,  Takashi Kyono ,  Yohei Enya ,  Katsunori Yanashima ,  Kunihiko Tasai ,  Hiroshi Nakajima

发明人： Tetsuya Kumano ,  Masaki Ueno ,  Takashi Kyono ,  Yohei Enya ,  Katsunori Yanashima ,  Kunihiko Tasai ,  Hiroshi Nakajima

IPC分类号： H01S5/34 ,  H01L21/18

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/3063 ,  H01S5/3202 ,  H01S2304/04

摘要： A gallium nitride-based semiconductor laser device with reduced threshold current. The gallium nitride-based semiconductor laser device is provided with an n-type cladding layer, an n-side light guide layer, an active layer, a p-side light guide layer, and a p-type cladding layer. The n-side light guide layer and the p-side light guide layer both contain indium. Each of indium compositions of the n-side light guide layer and the p-side light guide layer is not less than 2% and not more than 6%. A film thickness of the n-type cladding layer is in the range of not less than 65% and not more than 85% of a total of the film thickness of the n-type cladding layer and a film thickness of the p-type cladding layer 23.

摘要翻译： 具有降低的阈值电流的氮化镓基半导体激光器件。 氮化镓系半导体激光装置具备n型包覆层，n侧导光层，有源层，p侧导光层和p型覆层。 n侧导光层和p侧导光层均含有铟。 n侧导光层和p侧导光层的铟成分中的每一种不小于2％且不大于6％。 n型包覆层的膜厚在n层包层的膜厚的合计的65％以上且85％以下，p型包层的膜厚 第23层。

公开(公告)号：US20120299010A1

公开(公告)日：2012-11-29

申请号：US13484776

申请日：2012-05-31

申请人： Yohei ENYA ,  Yusuke Yoshizumi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

发明人： Yohei ENYA ,  Yusuke Yoshizumi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

IPC分类号： H01L33/32

CPC分类号： H01L21/02458 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2302/00

摘要： A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle with respect to a c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes GaN-based semiconductor layers. The reference axis is inclined at a first angle from the c-axis of the III-nitride semiconductor toward a first crystal axis, either the m-axis or a-axis. The reference axis is inclined at a second angle from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×104 cm−2.

摘要翻译： III族氮化物半导体器件具有由III族氮化物半导体构成的支撑基底，其具有沿与第一参考平面垂直的第一参考平面延伸的第一表面，所述第一参考平面垂直于相对于III族氮化物的c轴以预定角度倾斜的参考轴 半导体和设置在支撑基体的主表面上的外延半导体区域。 外延半导体区域包括GaN基半导体层。 基准轴从III族氮化物半导体的c轴朝向第一晶轴倾斜第一角度，即m轴或a轴。 基准轴从III族氮化物半导体的c轴向第二晶轴倾斜第二角度，m轴和a轴的另一方倾斜。 外延半导体区域的最外表面的形态包括多个凹坑。 坑的坑密度不大于5×104cm-2。

公开(公告)号：US08174035B2

公开(公告)日：2012-05-08

申请号：US12836090

申请日：2010-07-14

申请人： Takamichi Sumitomo ,  Masaki Ueno ,  Takashi Kyono ,  Yohei Enya ,  Yusuke Yoshizumi

发明人： Takamichi Sumitomo ,  Masaki Ueno ,  Takashi Kyono ,  Yohei Enya ,  Yusuke Yoshizumi

IPC分类号： H01L33/00

CPC分类号： H01L33/16 ,  B82Y20/00 ,  H01L33/0075 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0421 ,  H01S5/3202 ,  H01S5/343 ,  H01S5/34333

摘要： An object is to provide a nitride-based semiconductor light emitting device capable of preventing a Schottky barrier from being formed at an interface between a contact layer and an electrode. LD 1 is provided as a nitride-based semiconductor light emitting device provided with a GaN substrate 3, a hexagonal GaN-based semiconductor region 5 provided on a primary surface S1 of the GaN substrate 3 and including a light emitting layer 11, and a p-electrode 21 provided on the GaN-based semiconductor region 5 and comprised of metal. The GaN-based semiconductor region 5 includes a contact layer 17 involving strain, the contact layer 17 is in contact with the p-electrode, the primary surface S1 extends along a reference plane S5 inclined at a predetermined inclination angle θ from a plane perpendicular to the c-axis direction of the GaN substrate 3, and the inclination angle θ is either in the range of more than 40° and less than 90° or in the range of not less than 150° and less than 180°. The GaN-based semiconductor region 5 is lattice-matched with the GaN substrate 3.

摘要翻译： 目的是提供一种能够防止在接触层和电极之间的界面处形成肖特基势垒的氮化物系半导体发光元件。 提供LD1作为氮化物系半导体发光器件，其具备设置在GaN衬底3的主表面S1上且包括发光层11的GaN衬底3，六方晶系GaN基半导体区域5和p - 电极21，其设置在GaN基半导体区域5上并且由金属构成。 GaN基半导体区域5包括涉及应变的接触层17，接触层17与p电极接触，主表面S1沿着以预定倾斜角度倾斜的参考平面S5延伸; 从垂直于GaN衬底3的c轴方向的平面以及倾斜角度; 在大于40°且小于90°的范围内或在不小于150°且小于180°的范围内。 GaN基半导体区域5与GaN衬底3晶格匹配。

公开(公告)号：US08173458B2

公开(公告)日：2012-05-08

申请号：US12417857

申请日：2009-04-03

申请人： Yohei Enya ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Fumitake Nakanishi

发明人： Yohei Enya ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Fumitake Nakanishi

IPC分类号： H01L21/00

CPC分类号： H01L21/0254 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0262 ,  H01L33/0075 ,  H01L33/06

摘要： A method for forming a quantum well structure that can reduce the variation in the In composition in the thickness direction of a well layer and a method for manufacturing a semiconductor light emitting element are provided. In a step of forming a quantum well structure (active layer) by alternately growing barrier layers and well layers on a primary surface of a GaN substrate, the well layers are each formed by growing InGaN, the barrier layers are each grown at a first temperature, the well layers are each grown at a second temperature which is lower than that of the first temperature, and when the well layers are each formed, before a starting material gas for Ga (trimethylgallium) is supplied, a starting material gas for In is supplied.

摘要翻译： 提供一种用于形成能够减小阱层厚度方向的In组成的变化的量子阱结构的方法和半导体发光元件的制造方法。 在通过在GaN衬底的主表面上交替生长势垒层和阱层来形成量子阱结构（有源层）的步骤中，阱层各自通过生长InGaN形成，阻挡层各自在第一温度下生长 阱层各自在比第一温度低的第二温度下生长，并且当各层形成阱层时，在提供用于Ga（三甲基镓）的原料气体之前，用于In的原料气体为 提供。

公开(公告)号：US08139619B2

公开(公告)日：2012-03-20

申请号：US13209054

申请日：2011-08-12

申请人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

发明人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/2201 ,  H01S5/3202

摘要： Provided are a group-III nitride semiconductor laser device with a laser cavity to enable a low threshold current on a semipolar surface of a hexagonal group-III nitride, and a method for fabricating the group-III nitride semiconductor laser device on a stable basis. Notches, e.g., notch 113a and others, are formed at four respective corners of a first surface 13a located on the anode side of a group-III nitride semiconductor laser device 11. The notch 113a or the like is a part of a scribed groove provided for separation of the device 11. The scribed grooves are formed with a laser scriber and the shape of the scribed grooves is adjusted by controlling the laser scriber. For example, a ratio of the depth of the notch 113a or the like to the thickness of the group-III nitride semiconductor laser device 11 is not less than 0.05 and not more than 0.4, a tilt of a side wall surface at an end of the notch 113a is not less than 45° and not more than 85°, and a tilt of a side wall surface at an end of the notch 113b is not less than 10° and not more than 30°.

摘要翻译： 提供了具有激光腔的III族氮化物半导体激光器件，其能够在六边形III族氮化物的半极性表面上实现低阈值电流，以及稳定地制造III族氮化物半导体激光器件的方法。 在位于III族氮化物半导体激光装置11的阳极侧的第一表面13a的四个相应的角部处形成缺口，例如凹口113a等。凹口113a等是设置在划线槽中的一部分 用于分离设备11.划线槽由激光划线器形成，并且通过控制激光划线机来调节划线槽的形状。 例如，凹口113a的深度等于III族氮化物半导体激光器件11的厚度的比率不小于0.05且不大于0.4，则侧壁表面的端部的倾斜度 凹口113a不小于45°并且不大于85°，并且凹口113b的端部处的侧壁表面的倾斜度不小于10°并且不大于30°。

公开(公告)号：US08124430B2

公开(公告)日：2012-02-28

申请号：US12417857

申请日：2009-04-03

申请人： Yohei Enya ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Fumitake Nakanishi

发明人： Yohei Enya ,  Yusuke Yoshizumi ,  Masaki Ueno ,  Fumitake Nakanishi

IPC分类号： H01L21/00

摘要： A method for forming a quantum well structure that can reduce the variation in the In composition in the thickness direction of a well layer and a method for manufacturing a semiconductor light emitting element are provided. In a step of forming a quantum well structure (active layer) by alternately growing barrier layers and well layers on a primary surface of a GaN substrate, the well layers are each formed by growing InGaN, the barrier layers are each grown at a first temperature, the well layers are each grown at a second temperature which is lower than that of the first temperature, and when the well layers are each formed, before a starting material gas for Ga (trimethylgallium) is supplied, a starting material gas for In is supplied.

公开(公告)号：US08107507B2

公开(公告)日：2012-01-31

申请号：US12965633

申请日：2010-12-10

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Masaki Ueno ,  Fumitake Nakanishi

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Masaki Ueno ,  Fumitake Nakanishi

IPC分类号： H01S5/00

CPC分类号： H01L21/0242 ,  B82Y20/00 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/16 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333

摘要： A primary surface 23a of a supporting base 23 of a light-emitting diode 21a tilts by an off-angle of 10 degrees or more and less than 80 degrees from the c-plane. A semiconductor stack 25a includes an active layer having an emission peak in a wavelength range from 400 nm to 550 nm. The tilt angle “A” between the (0001) plane (the reference plane SR3 shown in FIG. 5) of the GaN supporting base and the (0001) plane of a buffer layer 33a is 0.05 degree or more and 2 degrees or less. The tilt angle “B” between the (0001) plane of the GaN supporting base (the reference plane SR4 shown in FIG. 5) and the (0001) plane of a well layer 37a is 0.05 degree or more and 2 degrees or less. The tilt angles “A” and “B” are formed in respective directions opposite to each other with reference to the c-plane of the GaN supporting base.

摘要翻译： 发光二极管21a的支撑基座23的主表面23a从c面倾斜10度以上且小于80度的偏角。 半导体堆叠25a包括在400nm至550nm的波长范围内具有发射峰的活性层。 GaN支撑基底的（0001）面（图5所示的基准面SR3）与缓冲层33a的（0001）面之间的倾斜角“A”为0.05度以上且2度以下。 GaN支撑基座的（0001）面（图5所示的基准面SR4）与阱层37a的（0001）面之间的倾斜角“B”为0.05度以上且2度以下。 相对于GaN支撑基体的c面，倾斜角“A”和“B”形成在彼此相反的各个方向上。

公开(公告)号：US08105857B2

公开(公告)日：2012-01-31

申请号：US12837306

申请日：2010-07-15

申请人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

发明人： Shimpei Takagi ,  Yusuke Yoshizumi ,  Koji Katayama ,  Masaki Ueno ,  Takatoshi Ikegami

IPC分类号： H01L21/18

CPC分类号： H01S5/0202 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/32341

摘要： A method for fabricating a III-nitride semiconductor laser device includes: forming a substrate product having a laser structure; scribing a first surface of the substrate product to form a scribed mark, which extends along a reference line indicative of a direction of the a-axis of the hexagonal III-nitride semiconductor, on the first surface, a scribed mark; mounting the substrate product on a breaking device to support first and second regions of the substrate product by first and second support portions, respectively, of the breaking device; and carrying out breakup of the substrate product by press in alignment with the scribed mark in a third region, without supporting the third region of the substrate product located between the first and second regions, to form another substrate product and a laser bar. First and second end faces of the laser bar form a laser cavity of the III-nitride semiconductor laser device.

摘要翻译： 一种制造III族氮化物半导体激光器件的方法包括：形成具有激光结构的衬底产品; 划定衬底产品的第一表面以形成刻痕，其沿着表示六边形III族氮化物半导体的a轴的方向的参考线延伸在第一表面上，划线标记; 将所述基板产品安装在断开装置上以分别通过所述断路装置的第一和第二支撑部分支撑所述基板产品的第一和第二区域; 并且在不支撑位于第一和第二区域之间的基板产品的第三区域的情况下，在第三区域中通过压制与基板标记对准地分解基板产品，以形成另一基板产品和激光条。 激光棒的第一和第二端面形成III族氮化物半导体激光器件的激光腔。

公开(公告)号：US08018029B2

公开(公告)日：2011-09-13

申请号：US12565290

申请日：2009-09-23

申请人： Yusuke Yoshizumi ,  Masaki Ueno ,  Takao Nakamura

发明人： Yusuke Yoshizumi ,  Masaki Ueno ,  Takao Nakamura

IPC分类号： H01L29/20 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/16

摘要： A gallium nitride-based epitaxial wafer for a nitride light-emitting device comprises a gallium nitride substrate having a primary surface, a gallium nitride-based semiconductor film provided on the primary surface, and, an active layer provided on the semiconductor film, the active layer having a quantum well structure. A normal line of the primary surface and a C-axis of the gallium nitride substrate form an off angle with each other. The off angle monotonically increases on the line that extends from one point to another point through a center point of the primary surface. The one point and the other point are on an edge of the primary surface, and indium contents of the well layer defined at n points on the line monotonically decrease in a direction from the one point to the other point. The thickness values of the well layer defined at the n points monotonically increase in the direction.

摘要翻译： 用于氮化物发光器件的氮化镓基外延晶片包括具有主表面的氮化镓衬底，设置在主表面上的氮化镓基半导体膜，以及设置在半导体膜上的有源层，活性层 层具有量子阱结构。 主表面的法线和氮化镓衬底的C轴彼此形成偏离角。 在从一个点延伸到另一个点通过主表面的中心点的直线上，偏角单调增加。 一点和另一点位于主表面的边缘上，在线上n点定义的阱层的铟含量在从一点到另一点的方向上单调减小。 在n点定义的阱层的厚度值在方向上单调增加。

公开(公告)号：US07955881B2

公开(公告)日：2011-06-07

申请号：US12500074

申请日：2009-07-09

申请人： Katsushi Akita ,  Takamichi Sumitomo ,  Yohei Enya ,  Takashi Kyono ,  Masaki Ueno

发明人： Katsushi Akita ,  Takamichi Sumitomo ,  Yohei Enya ,  Takashi Kyono ,  Masaki Ueno

IPC分类号： H01L21/00

CPC分类号： H01L21/0262 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/06

摘要： In the method of fabricating a quantum well structure which includes a well layer and a barrier layer, the well layer is grown at a first temperature on a sapphire substrate. The well layer comprises a group III nitride semiconductor which contains indium as a constituent. An intermediate layer is grown on the InGaN well layer while monotonically increasing the sapphire substrate temperature from the first temperature. The group III nitride semiconductor of the intermediate layer has a band gap energy larger than the band gap energy of the InGaN well layer, and a thickness of the intermediate layer is greater than 1 nm and less than 3 nm in thickness. The barrier layer is grown on the intermediate layer at a second temperature higher than the first temperature. The barrier layer comprising a group III nitride semiconductor and the group III nitride semiconductor of the barrier layer has a band gap energy larger than the band gap energy of the well layer.

摘要翻译： 在制造包括阱层和势垒层的量子阱结构的方法中，阱层在蓝宝石衬底的第一温度下生长。 阱层包含含有铟作为成分的III族氮化物半导体。 在InGaN阱层上生长中间层，同时使蓝宝石衬底温度从第一温度单调增加。 中间层的III族氮化物半导体的带隙能量大于InGaN阱层的带隙能量，中间层的厚度大于1nm且小于3nm。 阻挡层在高于第一温度的第二温度下在中间层上生长。 包含III族氮化物半导体的阻挡层和势垒层的III族氮化物半导体的带隙能量大于阱层的带隙能量。