公开(公告)号：US06577386B2

公开(公告)日：2003-06-10

申请号：US09852656

申请日：2001-05-11

申请人： Akihisa Yoshida ,  Masatoshi Kitagawa ,  Masao Uchida ,  Makoto Kitabatake ,  Tsuneo Mitsuyu

发明人： Akihisa Yoshida ,  Masatoshi Kitagawa ,  Masao Uchida ,  Makoto Kitabatake ,  Tsuneo Mitsuyu

IPC分类号： H01L21263

CPC分类号： H01L29/6606 ,  H01L21/046 ,  H01L29/1608 ,  H01L29/861 ,  Y10T29/41

摘要： An impurity doped SiC substrate 1 and SiC thin film 2 are irradiated with a laser light 5 having a wavelength longer than such a wavelength that a band edge absorption of a semiconductor is caused. The wavelength of the laser light 5 may be such a wavelength that an absorption is caused by a vibration by the bond of an impurity element and an element constituting the semiconductor, for example, a wavelength of 9 &mgr;m to 11 &mgr;m. Specifically, in the case where Al is doped in SiC, the wavelength of the laser light 5 may be within the range of 9.5 &mgr;m to 10 &mgr;m.

摘要翻译： 用波长比发生半导体的带边缘吸收的波长的波长的激光5照射杂质掺杂的SiC衬底1和SiC薄膜2。 激光5的波长可以是由杂质元素和构成半导体的元素的键合引起的吸收引起的波长，例如9μm〜11μm的波长。 具体地，在Al中掺杂有Al的情况下，激光5的波长可以在9.5μm〜10μm的范围内。

公开(公告)号：US5336361A

公开(公告)日：1994-08-09

申请号：US970991

申请日：1992-11-02

申请人： Akiyoshi Tamura ,  Masatoshi Kitagawa

发明人： Akiyoshi Tamura ,  Masatoshi Kitagawa

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/316 ,  H01L21/318 ,  H01L21/338 ,  H01L29/812 ,  H01L21/02

CPC分类号： H01L21/0217 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/02337 ,  H01L21/28264 ,  H01L21/31608 ,  H01L21/318 ,  H01L21/3185

摘要： Disclosed is a method of manufacturing an MIS-type semiconductor device having a greatly reduced interface state density. In this method, before the formation of a gate insulating film, the surface of a GaAs substrate is treated with a plasma generated from a gas containing hydrogen and nitrogen or from a gas containing hydrogen and argon, so as to reduce the interface state density. An ECR plasma is used as the plasma, so that the damage caused by the plasma to the GaAs substrate is alleviated. After the surface treatment process, an healing process is performed, which sufficiently removes the damage. During the surface treatment process using the plasma generated from the gas containing hydrogen and nitrogen, a GaN gate insulating film is formed on the surface of the GaAs substrate. The surface treatment process using the plasma generated from the gas containing hydrogen and argon is followed by the process of forming a gate insulating film on the GaAs substrate; the two processes are successively performed within the same apparatus without exposing the GaAs substrate to ambient air.

摘要翻译： 公开了一种制造具有大大降低的界面态密度的MIS型半导体器件的方法。 在该方法中，在形成栅极绝缘膜之前，利用由含有氢和氮的气体或含有氢和氩的气体产生的等离子体处理GaAs衬底的表面，以便降低界面态密度。 使用ECR等离子体作为等离子体，使得等离子体对GaAs衬底的损伤得到缓解。 在表面处理过程之后，进行愈合过程，这充分消除了损伤。 在使用由含有氢和氮的气体产生的等离子体的表面处理工艺中，在GaAs衬底的表面上形成GaN栅极绝缘膜。 使用由含有氢气和氩气的气体产生的等离子体的表面处理工序之后，在GaAs衬底上形成栅极绝缘膜; 在相同的装置中连续进行两个处理，而不将GaAs衬底暴露在环境空气中。

公开(公告)号：US4800174A

公开(公告)日：1989-01-24

申请号：US50699

申请日：1987-05-18

申请人： Shinichiro Ishihara ,  Masatoshi Kitagawa ,  Takashi Hirao

发明人： Shinichiro Ishihara ,  Masatoshi Kitagawa ,  Takashi Hirao

IPC分类号： H01L21/205 ,  C23C16/24 ,  C23C16/54 ,  H01L31/04

CPC分类号： C23C16/54 ,  C23C16/24 ,  Y10S148/025 ,  Y10S148/045 ,  Y10S148/072 ,  Y10S438/908

摘要： A method of producing an amorphous silicon semiconductor device makes use of a capacitance-coupled high-frequency glow-discharge semiconductor production apparatus which is equipped with a plurality of glow-discharge chambers each having a high-frequency electrode and a substrate holder opposing each other and means for supplying material gases to the glow-discharge chambers. A reaction of a material gas is effected in a first glow-discharge chamber, so as to form a semiconductor layer having a first conductivity type on a substrate introduced into the first glow-discharge chamber, and, after moving the substrate into a second glow-discharge chamber, a reaction of a material gas different from the material gas used in the first glow-discharge chamber is effected, thereby forming a semiconductor layer having a second conductivity type on the semiconductor layer of the first conductivity type. The substrate with the semiconductor layer of the first conductivity formed thereon is moved from the first glow-discharge chamber to the second glow-discharge chamber after a predetermined gas atmosphere is formed in the first glow-discharge chamber. The distance between the electrode and the substrate holder is made smaller in one of the first and second glow-discharge chambers which is designed for forming the thicker one of the semiconductor layers of the first and second conductivity types than in the other of the first and second glow-discharge chambers. The temperature of the substrate is set higher in one of the first and second glow-discharge chambers which is designed for forming the thicker one of the semiconductor layers of the first and second conductivity types than in the other of the first and second glow-discharge chambers.

摘要翻译： 一种非晶硅半导体器件的制造方法采用电容耦合高频辉光放电半导体制造装置，该装置配备有多个辉光放电室，每个辉光放电室具有彼此相对的高频电极和衬底保持器 以及用于将材料气体供应到辉光放电室的装置。 在第一辉光放电室中进行材料气体的反应，以便在引入第一辉光放电室的衬底上形成具有第一导电类型的半导体层，并且在将衬底移动到第二发光 进行与第一辉光放电室中使用的材料气体不同的原料气体的反应，由此在第一导电型半导体层上形成具有第二导电类型的半导体层。 在第一辉光放电室中形成规定的气体气氛之后，将形成有第一导电性的半导体层的基板从第一辉光放电室向第二辉光放电室移动。 在第一和第二辉光放电室之一中，电极和衬底保持器之间的距离较小，被设计用于形成第一和第二导电类型的较厚的一个半导体层，而不是第一和第二导电类型中的另一个， 第二个辉光放电室。 第一和第二辉光放电室之一的衬底的温度被设定为高于在第一和第二辉光放电中的另一个中形成第一和第二导电类型的较厚的一个半导体层的第一和第二辉光放电室 房间。

公开(公告)号：US06518494B1

公开(公告)日：2003-02-11

申请号：US08701292

申请日：1996-08-22

申请人： Munehiro Shibuya ,  Masatoshi Kitagawa ,  Yuuji Mukai ,  Akihisa Yoshida

发明人： Munehiro Shibuya ,  Masatoshi Kitagawa ,  Yuuji Mukai ,  Akihisa Yoshida

IPC分类号： H01L3100

CPC分类号： H01L31/0547 ,  H01L31/02363 ,  H01L31/035227 ,  Y02E10/52

摘要： A silicon structure having little solar light beam reflection, which is suitable for a solar battery. On the entire surface of a quartz substrate, Mo is deposited at a thickness of approximately 51 &mgr;m to form a lower electrode. On the entire surface of the lower electrode, a p type silicon structure having a thickness of 30 to 40 &mgr;m comprising an aggregate of a plurality of columnar silicon members mainly comprising silicon and having random orientations is formed via a film mainly comprising silicon, using Si2Cl6 mixed with BCl3. On the surface of the p type silicon structure, P is diffused by a thermal diffusion method using POCl3 to form an n type region at the periphery of the columnar silicon members. On the entire surface of the p type silicon structure, a transparent electrode comprising indium-tin oxide having a thickness of 30 to 40 &mgr;m is formed, and an upper electrode comprising Al having a thickness of approximately 1 &mgr;m is formed on the transparent electrode.

摘要翻译： 具有太阳光反射少的硅结构，适用于太阳能电池。 在石英衬底的整个表面上，以约51μm的厚度沉积Mo以形成下电极。 在下电极的整个表面上，通过使用Si 2 Cl 6混合的主要包含硅的膜，形成厚度为30至40μm的包含多个主要由硅构成并具有随机取向的多个柱状硅构件的聚集体的ap型硅结构 与BCl3。 在p型硅结构的表面上，P通过使用POCl 3的热扩散法扩散，在柱状硅构件的周围形成n型区域。 在p型硅结构的整个表面上，形成厚度为30〜40μm的氧化铟锡的透明电极，在透明电极上形成厚度约为1μm的包含Al的上部电极。

公开(公告)号：US5766342A

公开(公告)日：1998-06-16

申请号：US544016

申请日：1995-10-17

申请人： Munehiro Shibuya ,  Masatoshi Kitagawa ,  Yuji Mukai ,  Takashi Hirao ,  Akihisa Yoshida

发明人： Munehiro Shibuya ,  Masatoshi Kitagawa ,  Yuji Mukai ,  Takashi Hirao ,  Akihisa Yoshida

IPC分类号： C23C16/24 ,  C23C16/448 ,  C30B23/06

CPC分类号： C23C16/4486 ,  C23C16/24 ,  Y10T117/1024

摘要： The method for forming a silicon film of this invention includes the steps of introducing a compound containing silicon and chlorine and being in a liquid form under normal pressure and at an ordinary temperature into a reaction chamber, and spraying the compound in the liquid form in a fine particle state to a surface of a substrate supported in the reaction chamber, and decomposing the compound in the fine particle state by energy applied from outside of the reaction chamber, and depositing a silicon film on the substrate supported in the reaction chamber.

摘要翻译： 本发明的形成硅膜的方法包括以下步骤：在常压和常温下将含有硅和氯的化合物以液体形式引入反应室中，并将液体形式的化合物喷雾在 微粒状态到支撑在反应室中的基板的表面，并且通过从反应室外部施加的能量分解微细状态的化合物，并在支撑在反应室中的基板上沉积硅膜。

公开(公告)号：US5672252A

公开(公告)日：1997-09-30

申请号：US483835

申请日：1995-06-15

申请人： Shigenori Hayashi ,  Kazuki Komaki ,  Takeshi Kamada ,  Masatoshi Kitagawa ,  Takashi Deguchi ,  Ryoichi Takayama ,  Takashi Hirao

发明人： Shigenori Hayashi ,  Kazuki Komaki ,  Takeshi Kamada ,  Masatoshi Kitagawa ,  Takashi Deguchi ,  Ryoichi Takayama ,  Takashi Hirao

IPC分类号： C23C14/00 ,  C23C14/08 ,  C23C14/58 ,  G02F1/00 ,  H01L21/314 ,  H01L21/316 ,  H01L37/02 ,  H01L41/316 ,  C23C14/34

CPC分类号： C23C14/5853 ,  C23C14/0078 ,  C23C14/088 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/314 ,  H01L21/31691 ,  H01L37/025 ,  H01L41/1875 ,  H01L41/316 ,  G02F1/0027

摘要： A method whereby perovskite type oxide dielectric thin films with ABO.sub.3 structure are able to be formed with such features as good stability, uniformity, reproducibility, or the like, with high through-put by having a deposition process, wherein the thin films are deposited on a substrate, and a stabilization process, where no deposition of the thin films takes place, repeated alternatingly while the substrate temperature being kept near the temperature at which perovskite type oxide dielectric thin films are formed. Also, by employing (i) a processing method wherein a decomposing excitation of a reactive gas due to plasma takes place on or near the deposition surface in a gaseous atmosphere comprising a gas that reacts with the elements composing the thin films, (ii) a processing method wherein an oxidation reaction takes place on the deposition surface in a gaseous atmosphere comprising at least ozone (O.sub.3), and (iii) a processing method wherein light of short wave length is irradiated on the deposition surface in a gaseous atmosphere comprising at least reactive elements in the non-deposition process, the oxygen concentration in the deposited thin films is adjusted and dielectric thin films of good quality and an extremely low defect content are realized.

摘要翻译： 具有ABO3结构的钙钛矿型氧化物电介质薄膜能够通过具有沉积工艺的高通量形成具有良好的稳定性，均匀性，再现性等特性的方法，其中薄膜沉积在 基板和稳定化处理，其中不存在薄膜的沉积，在衬底温度保持接近形成钙钛矿型氧化物电介质薄膜的温度的同时交替重复。 此外，通过采用以下处理方法：（i）在包含与组成薄膜的元素反应的气体的气体气氛中，在等离子体发生的反应性气体的分解激发发生在沉积表面上或其附近的处理方法，（ii） 处理方法，其中在至少包含臭氧（O 3）的气体气氛中在沉积表面上发生氧化反应，和（iii）其中在至少包括至少包含臭氧（O 3）的气体气氛中在沉积表面上照射短波长的光的处理方法 在非沉积工艺中的非活性元素，沉积的薄膜中的氧浓度被调节，并且实现了良好质量和极低缺陷含量的介电薄膜。

公开(公告)号：US5130537A

公开(公告)日：1992-07-14

申请号：US674407

申请日：1991-03-25

申请人： Yukio Okamoto ,  Takashi Iino ,  Satoshi Shimura ,  Masamichi Tsukada ,  Hiromi Yamashita ,  Masatoshi Kitagawa

发明人： Yukio Okamoto ,  Takashi Iino ,  Satoshi Shimura ,  Masamichi Tsukada ,  Hiromi Yamashita ,  Masatoshi Kitagawa

IPC分类号： G01N27/62 ,  G01N21/73 ,  H01J49/04

CPC分类号： G01N21/73

摘要： A plasma analyzer for trace element analysis has a gas supply system comprising a plurality of gas sources, an electromagnetic valve provided on a line connecting each gas source to a plasma generating space, a buffer tank provided after the electromagnetic valve on the line, and a flow regulating flowmeter provided after the buffer tank on the line. Each electromagnetic valves is controlled for on-off operation and the corresponding buffer tank suppresses the sudden change of the flow rate of the corresponding gas, so that the composition of the gas supplied to the plasma generating space changes gradually in spite of the simple on-off operation of the electromagnetic valves. Thus, the fluctuation and extinction of the plasma attributable to the sudden change of the composition of the gas supplied to the plasma generating space can be effectively prevented.

摘要翻译： 一种用于微量元素分析的等离子体分析器具有包括多个气体源的气体供给系统，设置在将每个气体源连接到等离子体产生空间的线路上的电磁阀，设置在该线路上的电磁阀之后的缓冲罐，以及 流量调节流量计提供在缓冲罐上的线路上。 每个电磁阀被控制为开 - 关操作，并且相应的缓冲罐抑制相应气体的流量的突然变化，使得提供给等离子体产生空间的气体的组成逐渐变化， 关闭电磁阀的操作。 因此，可以有效地防止由于供给到等离子体产生空间的气体的组成突然变化引起的等离子体的波动和消光。

公开(公告)号：US4624045A

公开(公告)日：1986-11-25

申请号：US716604

申请日：1985-03-27

申请人： Shinichiro Ishihara ,  Takashi Hirao ,  Koshiro Mori ,  Masaharu Ono ,  Masatoshi Kitagawa

发明人： Shinichiro Ishihara ,  Takashi Hirao ,  Koshiro Mori ,  Masaharu Ono ,  Masatoshi Kitagawa

IPC分类号： H01L31/042 ,  H01L23/535 ,  H01L27/142 ,  H01L31/0224 ,  H01L31/04 ,  H01L31/20 ,  H01L31/18 ,  H01L27/14

CPC分类号： H01L31/022425 ,  H01L23/535 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/202 ,  H01L2924/0002 ,  Y02E10/50 ,  Y02P70/521

摘要： A thin film device such as an amorphous thin film solar battery is easily made with high integration by use of metal-diffused regions in the thin film as an electrical connection region across the thickness of the thin film. By use of such metal-diffused regions 24, 24 . . . for connection between transparent stripe shaped electrodes 21', 21'. . . disposed between glass substrate 20 and amorphous silicon thin film 23 and stripe shaped metal electrodes 25, 25 . . . on the top surface of the thin film 23, series connected solar battery cells can be made with a small number of process steps.

摘要翻译： 诸如非晶薄膜太阳能电池的薄膜器件通过在薄膜中的金属扩散区域作为跨越薄膜厚度的电连接区域的高集成度容易地制成。 通过使用这种金属扩散区域24,24。 。 。 用于透明条状电极21'，21'之间的连接。 。 。 设置在玻璃基板20和非晶硅薄膜23之间以及条状金属电极25,25之间。 。 。 在薄膜23的上表面上，串联的太阳能电池单元可以用少量的工艺步骤制成。

公开(公告)号：US07511428B2

公开(公告)日：2009-03-31

申请号：US10530500

申请日：2003-10-10

申请人： Hikaru Nishitani ,  Yukihiro Morita ,  Masatoshi Kitagawa

发明人： Hikaru Nishitani ,  Yukihiro Morita ,  Masatoshi Kitagawa

IPC分类号： H01J17/49 ,  H01J1/62

CPC分类号： H01J11/40 ,  H01J11/12 ,  H01J11/42

摘要： A plasma display panel having a dielectric protection layer (14) including MgO and phosphorlayers (25R, 25G, 25B) for red, green, and blue respectively wherein none of the phosphor layers contain any member of the group consisting of Group IV elements, transition metals, alkali metals, and alkaline earth metals, or wherein all the phosphor layers each contain a specific amount of one or more members of the group consisting of Group IV group elements, transition metals, alkali metals and alkaline earth metals. In such a plasma display panel, changes over the course of time in the impedance of the dielectric protection layer (14) is suppressed, and the phosphor layers are uniform with respect to the directional characteristics of the changes of the impedances, which results in suppression of occurrence of black noise.

摘要翻译： 一种等离子体显示面板，其具有包括MgO的介电保护层（14）和分别用于红色，绿色和蓝色的磷光体层（25R，25G，25B），其中，所述荧光体层中没有一个含有由IV族元素组成的组的任何成员， 金属，碱金属和碱土金属，或者其中所有荧光体层各自含有特定量的由IV族基团元素，过渡金属，碱金属和碱土金属组成的组中的一种或多种成员。 在这种等离子体显示面板中，电介质保护层（14）的阻抗中的时间变化被抑制，并且荧光体层相对于阻抗变化的方向特性是均匀的，这导致抑制 发生黑噪声。

公开(公告)号：US20070171149A1

公开(公告)日：2007-07-26

申请号：US10559043

申请日：2004-06-23

申请人： Shinichiro Hashimoto ,  Masatoshi Kitagawa ,  Yukihiro Morita ,  Naoki Kosugi

发明人： Shinichiro Hashimoto ,  Masatoshi Kitagawa ,  Yukihiro Morita ,  Naoki Kosugi

IPC分类号： G09G3/28

CPC分类号： G09G3/2942 ,  G09G2320/0271 ,  G09G2320/066 ,  G09G2360/16

摘要： The present invention aims to provide a PDP apparatus, where a sustain data pulse is applied to data electrodes during a sustain period, having high display quality,and capable of displaying a dark screen image vividly with high contrast without using an error diffusion method, as well as to provide a method of driving the PDP apparatus. In order to achieve the above object, the method of driving the PDP apparatus according to the present invention, during the sustain period, detects an average luminance of a screen image to be displayed, and sets a voltage waveform of a sustain data pulse to be applied to the data electrodes according to the detected average luminance, thereby modulating a luminance of the screen image.

摘要翻译： 本发明的目的在于提供一种在维持期间对数据电极施加维持数据脉冲，具有高显示质量并且能够以高对比度生动地显示深色屏幕而不使用误差扩散方法的PDP装置，作为 以及提供驱动PDP装置的方法。 为了实现上述目的，根据本发明的驱动PDP装置的方法在维持期间检测要显示的屏幕图像的平均亮度，并将维持数据脉冲的电压波形设置为 根据检测到的平均亮度施加到数据电极，从而调制屏幕图像的亮度。