公开(公告)号：US11152421B2

公开(公告)日：2021-10-19

申请号：US16181705

申请日：2018-11-06

Applicant: OmniVision Technologies, Inc.

Inventor： Yuanliang Liu ,  Vincent Venezia

IPC: H01L31/028 ,  H01L31/0288 ,  H01L27/146 ,  H01L21/266

Abstract: Image sensor includes a first semiconductor material and a plurality of first doped regions disposed in the semiconductor material. The plurality of first doped regions is part of a plurality of photodiodes to receive light and convert the light into image charge. A second semiconductor material is disposed on the first semiconductor material, and a plurality of second doped regions is disposed in the second semiconductor. The plurality of second doped regions is electrically coupled to the plurality of first doped regions, and the plurality of second doped regions is part of the plurality of photodiodes.

公开(公告)号：US20200059618A1

公开(公告)日：2020-02-20

申请号：US16103257

申请日：2018-08-14

Applicant: OmniVision Technologies, Inc.

Inventor： Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Vincent Venezia ,  Dyson Tai ,  Lindsay Grant

IPC: H04N5/369 ,  H01L27/146

Abstract: An image sensor pixel array comprises a center region and two parallel edge regions, wherein the center region is between the two parallel edge regions. The center region comprises a plurality of image pixels disposed along first sub-array of rows and columns, wherein each of the plurality of image pixels comprises a first micro-lens (ML) formed at an offset position above a first light receiving element as a countermeasure for shortening of exit pupil distance of the image pixel in the center region, and each of the two parallel edge regions comprises a plurality of phase detection auto-focus (PDAF) pixels disposed along second sub-array of rows and columns, wherein each of the plurality of PDAF pixels comprises a second micro-lens (ML) formed at an alignment position above a second light receiving element; and at least one of the PDAF pixels is located at a distance away from center of the edge region to receive incident light along an injection tilt angle.

公开(公告)号：US10566380B2

公开(公告)日：2020-02-18

申请号：US15786874

申请日：2017-10-18

Applicant: OmniVision Technologies, Inc.

Inventor： Young Woo Jung ,  Lindsay Grant ,  Dyson Tai ,  Vincent Venezia ,  Wei Zheng

IPC: H01L27/146 ,  H01L27/148

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge. A floating diffusion is disposed proximate to the plurality of photodiodes to receive the image charge from the plurality of photodiodes. A plurality of transfer transistors is coupled to transfer the image charge from the plurality of photodiodes into the floating diffusion in response to a voltage applied to the gate terminal of the plurality of transfer transistors. A first trench isolation structure extends from a frontside of the semiconductor material into the semiconductor material and surrounds the plurality of photodiodes. A second trench isolation structure extends from a backside of the semiconductor material into the semiconductor material. The second trench isolation structure is disposed between individual photodiodes in the plurality of photodiodes.

公开(公告)号：US10062722B2

公开(公告)日：2018-08-28

申请号：US15284961

申请日：2016-10-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto ,  Vincent Venezia ,  Boyd Albert Fowler ,  Eric A. G. Webster

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/14612 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/1469

Abstract: An image sensor includes a pixel array having plurality of pixel cells arranged into a plurality of rows and a plurality of columns of pixel cells in a first semiconductor die. A plurality of pixel support circuits are arranged in a second semiconductor die that is stacked and coupled together with the first semiconductor die. A plurality of interconnect lines are coupled between the first and second semiconductor dies, and each one of the plurality of pixel cells is coupled to a corresponding one of the plurality of pixel support circuits through a corresponding one plurality of interconnect lines. A plurality of shield bumps are disposed proximate to corners of the pixel cells in the pixel array and between the first and second semiconductor dies such that each one of the plurality of shield bumps is disposed between adjacent interconnect lines along a diagonal of the pixel array.

公开(公告)号：US20160086999A1

公开(公告)日：2016-03-24

申请号：US14494960

申请日：2014-09-24

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Vincent Venezia ,  Gang Chen ,  Dajiang Yang ,  Dyson H. Tai

IPC: H01L27/146

CPC classification number: H01L27/14649 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor includes a plurality of photodiodes disposed proximate to a frontside of a first semiconductor layer to accumulate image charge in response to light directed into the frontside of the first semiconductor layer. A plurality of pinning wells is disposed in the first semiconductor layer. The pinning wells separate individual photodiodes included in the plurality of photodiodes. A plurality of dielectric layers is disposed proximate to a backside of the first semiconductor layer. The dielectric layers are tuned such that light having a wavelength substantially equal to a first wavelength included in the light directed into the frontside of the first semiconductor layer is reflected from the dielectric layers back to a respective one of the plurality of photodiodes disposed proximate to the frontside of the first semiconductor layer.

Abstract translation: 图像传感器包括靠近第一半导体层的前侧设置的多个光电二极管，以响应于被引导到第一半导体层的前侧的光积累图像电荷。 多个钉扎孔设置在第一半导体层中。 钉扎井分离包括在多个光电二极管中的各个光电二极管。 多个介电层设置在第一半导体层的背面附近。 电介质层被调谐，使得具有基本上等于包含在第一半导体层的前端的光的第一波长的波长的光从电介质层反射回多个光电二极管中相应的一个设置在接近 第一半导体层的前方。

公开(公告)号：US09184206B1

公开(公告)日：2015-11-10

申请号：US14270309

申请日：2014-05-05

Applicant: OmniVision Technologies, Inc.

Inventor： Wei Zheng ,  Dyson Hsin-Chih Tai ,  Vincent Venezia

IPC: H01L21/00 ,  H01L27/146 ,  H01L21/762 ,  H01L21/768

CPC classification number: H01L21/762 ,  H01L21/76224 ,  H01L21/76829 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for manufacturing a backside illuminated color image sensor includes (a) modifying the frontside of an image sensor wafer, having pixel arrays, to produce electrical connections to the pixel arrays, wherein the electrical connections extend depth-wise into the image sensor wafer from the frontside, and (b) modifying the backside of the image sensor wafer to expose the electrical connections.

Abstract translation: 一种用于制造背面照明彩色图像传感器的方法包括：（a）修改具有像素阵列的图像传感器晶片的前侧以产生与像素阵列的电连接，其中电连接从图像传感器晶片向深度方向延伸到图像传感器晶片中 （b）修改图像传感器晶片的背面以暴露电连接。

公开(公告)号：US09147776B2

公开(公告)日：2015-09-29

申请号：US14331646

申请日：2014-07-15

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Howard E. Rhodes ,  Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Vincent Venezia

IPC: H01L27/146 ,  H01L31/0224 ,  H01L31/103

CPC classification number: H01L31/0224 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14643 ,  H01L31/103

Abstract: An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed over the photodiode region in the semiconductor layer. The second polarity is opposite from the first polarity. A first polarity charge layer is disposed proximate to the pinning surface layer over the photodiode region. A contact etch stop layer is disposed over the photodiode region proximate to the first polarity charge layer. The first polarity charge layer is disposed between the pinning surface layer and the contact etch stop layer such that first polarity charge layer cancels out charge having a second polarity that is induced in the contact etch stop layer. A passivation layer is also disposed over the photodiode region between the pinning surface layer and the first polarity charge layer.

Abstract translation: 图像传感器像素包括设置在半导体层中的具有第一极性掺杂型的光电二极管区域。 具有第二极性掺杂型的钉扎表面层设置在半导体层中的光电二极管区域的上方。 第二极性与第一极性相反。 第一极性电荷层设置在光电二极管区域附近的钉扎表面层附近。 接触蚀刻停止层设置在靠近第一极性电荷层的光电二极管区域的上方。 第一极性电荷层设置在钉扎表面层和接触蚀刻停止层之间，使得第一极性电荷层抵消在接触蚀刻停止层中感应的具有第二极性的电荷。 钝化层也设置在钉扎表面层和第一极性电荷层之间的光电二极管区域之上。

公开(公告)号：US20140299956A1

公开(公告)日：2014-10-09

申请号：US13856993

申请日：2013-04-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chih-Wei Hsiung ,  Oray Orkun Cellek ,  Gang Chen ,  Duli Mao ,  Vincent Venezia ,  Hsin-Chih Tai

IPC: H01L31/0216 ,  H01L27/146

CPC classification number: H01L31/02161 ,  H01L27/1462 ,  H01L27/1464

Abstract: An imaging device includes a semiconductor substrate having a photosensitive element for accumulating charge in response to incident image light. The semiconductor substrate includes a light-receiving surface positioned to receive the image light. The imaging device also includes a negative charge layer and a charge sinking layer. The negative charge layer is disposed proximate to the light-receiving surface of the semiconductor substrate to induce holes in an accumulation zone in the semiconductor substrate along the light-receiving surface. The charge sinking layer is disposed proximate to the negative charge layer and is configured to conserve or increase an amount of negative charge in the negative charge layer. The negative charge layer is disposed between the semiconductor substrate and the charge sinking layer.

Abstract translation: 成像装置包括具有用于响应于入射图像光累积电荷的光敏元件的半导体衬底。 半导体衬底包括被定位成接收图像光的光接收表面。 成像装置还包括负电荷层和电荷沉没层。 负电荷层设置在半导体衬底的光接收表面附近以沿着光接收表面在半导体衬底中的累积区域中引起空穴。 电荷沉降层设置成靠近负电荷层，并且被配置为在负电荷层中保存或增加负电荷的量。 负电荷层设置在半导体衬底和电荷沉降层之间。

公开(公告)号：US20140239351A1

公开(公告)日：2014-08-28

申请号：US13777197

申请日：2013-02-26

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14643

Abstract: Embodiments of a process including depositing a sacrificial layer on the surface of a substrate over a photosensitive region, over the top surface of a transfer gate, and over at least the sidewall of the transfer gate closest to the photosensitive region, the sacrificial layer having a selected thickness. A layer of photoresist is deposited over the sacrificial layer, which is patterned and etched to expose the surface of the substrate over the photosensitive region and at least part of the transfer gate top surface, leaving a sacrificial spacer on the sidewall of the transfer gate closest to the photosensitive region. The substrate is plasma doped to form a pinning layer between the photosensitive region and the surface of the substrate. The spacing between the pinning layer and the sidewall of the transfer gate substantially corresponds to a thickness of the sacrificial spacer. Other embodiments are disclosed and claimed.

Abstract translation: 一种方法的实施方案包括在光敏区域上方的基底表面上沉积牺牲层，在转移栅极的顶表面上，以及至少最靠近光敏区域的转移栅极的侧壁上，牺牲层具有 选择厚度。 在牺牲层上沉积一层光致抗蚀剂，其被图案化和蚀刻以在基片的表面上在感光区域和至少部分传输栅极顶表面上露出基底表面，在传输门的侧壁上留下牺牲隔离物 到感光区域。 衬底是等离子体掺杂的，以在光敏区域和衬底的表面之间形成钉扎层。 钉扎层和转移门的侧壁之间的间隔基本上对应于牺牲间隔物的厚度。 公开和要求保护其他实施例。

公开(公告)号：US08817142B2

公开(公告)日：2014-08-26

申请号：US13686776

申请日：2012-11-27

Applicant: OmniVision Technologies, Inc.

Inventor： Hsin-Chih Tai ,  Yin Qian ,  Duli Mao ,  Vincent Venezia

IPC: H04N3/14 ,  H04N5/335 ,  H04N9/04 ,  H04N9/083 ,  H01L27/146

CPC classification number: H04N9/045 ,  H01L27/14621 ,  H01L27/14643

Abstract: A color image sensor includes a pixel array including CFA overlaying an array of photo-sensors for acquiring color image data. The CFA includes first color filter elements of a first color overlaying a first group of the photo-sensors and second color filter elements of a second color overlaying a second group of the photo-sensors. The first group of photo-sensors generate first color signals of a first color channel and the second group of photo-sensors generate second color signals of a second color channel. The color image sensor further includes a color signal combiner circuit (“CSCC”) coupled to receive the first and second color signals output from the pixel array. The CSCC includes a combiner coupled to combine the first and second colors signals to generate third color signals of a third color channel. An output port is coupled to the CSCC to output the color image data.

Abstract translation: 彩色图像传感器包括像素阵列，其包括覆盖用于获取彩色图像数据的光电传感器阵列的CFA。 CFA包括覆盖第一组光传感器的第一颜色的第一滤色器元件和覆盖第二组光传感器的第二颜色的第二滤色器元件。 第一组光电传感器产生第一颜色通道的第一颜色信号，第二组光电传感器产生第二颜色通道的第二颜色信号。 彩色图像传感器还包括耦合以接收从像素阵列输出的第一和第二颜色信号的颜色信号组合器电路（“CSCC”）。 CSCC包括组合器，其被耦合以组合第一和第二颜色信号以产生第三颜色通道的第三颜色信号。 输出端口耦合到CSCC以输出彩色图像数据。