Abstract:
An optoelectronic component includes a housing including a first cavity bounded by a first wall, wherein a circumferentially extending first step is formed at an inner side of the first wall, the first step circumferentially extends around the first cavity obliquely with respect to a bottom of the first cavity, a first optoelectronic semiconductor chip is arranged at the bottom of the first cavity, the first optoelectronic semiconductor chip is embedded into a first potting material arranged in the first cavity and extending from the bottom of the first cavity as far as the first step, and a first potting surface of the first potting material is formed at the first step.
Abstract:
A lead frame used to produce a chip package includes a first lead frame section and a second lead frame section connected to one another by a bar, wherein the bar includes a first longitudinal section, a second longitudinal section and a third longitudinal section, the first longitudinal section adjoins the first lead frame section and the third longitudinal section adjoins the second lead frame section, the first longitudinal section and the third longitudinal section are oriented parallel to one another, the first longitudinal section and the second longitudinal section form an angle not equal to 180° and not equal to 90°, and the lead frame is planar.
Abstract:
An optoelectronic component has at least one lead frame section, wherein an optoelectronic element is arranged on the lead frame section, a mold material is applied at least on a first face of the lead frame section and adhesively connected to the lead frame section by the first face, the lead frame section consists of a predetermined material, a part of the first face of the lead frame section is provided with a coating, a region of the first face is free of the coating, and the mold material connects to the material of the lead frame section in the free region.
Abstract:
A method of producing optoelectronic components includes providing a carrier; arranging optoelectronic semiconductor chips on the carrier; forming a conversion layer for radiation conversion on the carrier, wherein the optoelectronic semiconductor chips are surrounded by the conversion layer; and carrying out a singulation process to form separate optoelectronic components, wherein at least the conversion layer is severed.
Abstract:
Disclosed is a method for producing a wavelength conversion element (10) wherein a wavelength conversion layer (100) is provided, the surface thereof is treated with a plasma (50), and the wavelength conversion layer is punched. Also disclosed are a wavelength conversion layer and an optoelectronic component comprising a wavelength conversion layer.
Abstract:
A method of producing an optoelectronic component includes providing an optoelectronic semiconductor chip having a mask layer arranged on an upper side of the optoelectronic semiconductor chip; providing a carrier having walls arranged on a surface of the carrier, the walls laterally limiting a receiving region; arranging an optoelectronic semiconductor chip in the receiving region, wherein a bottom side of the optoelectronic semiconductor chip faces the surface of the carrier; filling a region of the receiving region surrounding the optoelectronic semiconductor chip with an optically reflective material up to a height that lies between the upper side of the optoelectronic semiconductor chip and an upper side of the mask layer; removing the mask layer to create a free space in the optically reflective material; and introducing a wavelength-converting material into the free space.
Abstract:
An optoelectronic component includes a plastics housing, wherein a first leadframe section is embedded into the plastics housing, a chip landing face and a soldering contact face of the first leadframe section are at least partly not covered by the plastics housing, the soldering contact face has a groove, and the groove is not covered by the material of the plastics housing.