-
公开(公告)号：US20150126038A1
公开(公告)日：2015-05-07
申请号：US14525712
申请日：2014-10-28
Inventor： Shogo OKITA
IPC: H01J37/32 , H01L21/3065
CPC classification number: H01J37/32724 , H01J37/321 , H01J37/32532 , H01J37/32541 , H01L21/67109 , H01L21/6831 , H01L21/6836 , H01L21/78 , H01L2221/68327
Abstract: A dry etching apparatus plasma processes a wafer held by a carrier having a frame and an holding sheet. A electrode unit of a stage includes an electrostatic chuck. An area of an upper surface of the electrostatic chuck onto which the wafer is placed via the holding sheet is a flat portion and is not subject to backside gas cooling. A first groove structure is formed in the area onto which the wafer is placed via the holding sheet as well as in an area onto which a holding sheet between the wafer and the frame. To a minute space defined by the first groove structure and the carrier, a heat transfer gas is supplied from a first heat transfer gas supply section through heat transfer gas supply hole (backside gas cooling). Both of plasma processing performance and cooling performance are improved.
Abstract translation: 干蚀刻装置等离子体处理由具有框架和保持片的载体保持的晶片。 舞台的电极单元包括静电卡盘。 通过保持片放置晶片的静电卡盘的上表面的区域是平坦部分，不进行背面气体冷却。 在通过保持片放置晶片的区域中以及在晶片和框架之间的保持片上的区域中形成第一凹槽结构。 在由第一槽结构和载体限定的微小空间内，通过传热气体供给孔（背侧气体冷却）从第一传热气体供给部供给传热气体。 提高了等离子体处理性能和冷却性能。
-
公开(公告)号：US20150122776A1
公开(公告)日：2015-05-07
申请号：US14524303
申请日：2014-10-27
Inventor： Shogo OKITA
IPC: B08B7/00
CPC classification number: H01J37/32697 , H01J37/3211 , H01J37/3244 , H01J37/32568 , H01J37/32715 , H01J37/32724 , H01J37/32816 , H01J2237/002 , H01J2237/334 , H01L21/3065 , H01L21/67069 , H01L21/6831 , H01L21/6833 , H01L21/78
Abstract: A dry etching apparatus plasma processes a wafer held by a carrier having a frame and an holding sheet. A electrode unit of a stage includes an electrostatic chuck. Adjacent to an upper surface of the electrostatic chuck, a first electrostatic attraction electrode and a second electrostatic attraction electrode are incorporated. The first electrostatic attraction electrode is of unipolar type and electrostatically attracts the wafer via the holding sheet. The second electrostatic electrode is of bipolar type and electrostatically attracts the frame via the holding sheet as well as a holding sheet between the wafer and the frame. Both of plasma processing performance and electrostatic attraction performance are improved.
Abstract translation: 干蚀刻装置等离子体处理由具有框架和保持片的载体保持的晶片。 舞台的电极单元包括静电卡盘。 在静电吸盘的上表面附近，并入有第一静电吸引电极和第二静电吸引电极。 第一静电吸引电极是单极型的，并通过保持片静电吸引晶片。 第二静电电极是双极型的，并且通过保持片静电吸引框架以及在晶片和框架之间的保持片。 提高了等离子体处理性能和静电吸引性能。
-
公开(公告)号：US20250022682A1
公开(公告)日：2025-01-16
申请号：US18766729
申请日：2024-07-09
Inventor： Shogo OKITA , Takahiro MIYAI , Yoshiyuki WADA , Naoaki TAKEDA , Toshiyuki TAKASAKI , Hisao NAGAI , Seiya NAGANO
IPC: H01J37/32
Abstract: A plasma generation unit includes: a first coil that includes first conductors that are connected in parallel to each other; and a first distribution portion that distributes, to each of the first conductors, first high frequency power to be supplied to the first coil. The first distribution portion includes: a first input portion to which the first high frequency power is input; a first branch portion at which the first high frequency power input to the first input portion is divided and delivered into first branch lines; and second branch portions at each of which a corresponding one of the first branch lines branches out into second branch lines. Each of the second branch lines is connected to one of first application portions that are included in the first conductors. The first branch lines have a substantially equal length. The second branch lines have a substantially equal length.
-
公开(公告)号：US20250014877A1
公开(公告)日：2025-01-09
申请号：US18761458
申请日：2024-07-02
Inventor： Hisao NAGAI , Shogo OKITA , Toshiyuki TAKASAKI , Seiya NAGANO , Naoaki TAKEDA , Takahiro MIYAI
IPC: H01J37/32
Abstract: A plasma processing apparatus including a chamber, a placement unit which is disposed in the chamber and on which a substrate is to be placed, a plasma generation unit configured to generate a plasma within the chamber, a gas supply unit configured to supply a raw material gas of the plasma into the chamber, a measurement unit configured to measure and output a distribution information regarding a plasma distribution in the chamber, a control unit configured to control the plasma generation unit and the gas supply unit so as to repeat a unit processing on the substrate, a memory unit configured to store process conditions including conditions for the unit processing, and a modification unit configured to modify the process conditions. The measurement unit measures the distribution information (N) in the unit processing (N) at an Nth time, where N is an integer. When the distribution information (N) satisfies a predetermined condition, the modification unit modifies the process conditions in the unit processing (M) at an Mth time, where M is any integer equal to or greater than (N+1).
-
公开(公告)号：US20240014008A1
公开(公告)日：2024-01-11
申请号：US18336139
申请日：2023-06-16
Inventor： Naoaki TAKEDA , Shogo OKITA , Seiya NAGANO , Toshihiro WADA , Takahiro MIYAI
IPC: H01J37/32
CPC classification number: H01J37/32183
Abstract: A disclosed plasma processing apparatus 10 includes: a chamber 11 having an opening 11a; a stage 12 disposed in the chamber 11, the stage for placing an object to be processed; a dielectric member 13 closing the opening 11a; and a plasma generation unit 16 disposed on the opposite side to the chamber 11 with reference to the dielectric member 13, and configured to, when applied with a high-frequency power, generate a plasma in the chamber 11. The plasma generation unit 16 has a first coil 17 including one or a plurality of first conductors 17a connected in parallel with each other, and a second coil 18 disposed so as to surround the first coil 17 and including a plurality of second conductors 18a connected in parallel with each other. The number of the second conductors 18a is greater than the number of the first conductors 17a.
-
Patent Agency Ranking
公开(公告)号：US20230170186A1
公开(公告)日：2023-06-01
申请号：US18056294
申请日：2022-11-17
Inventor： Shogo OKITA , Yoshiyuki WADA , Takahiro MIYAI , Naoaki TAKEDA , Toshihiro WADA , Toshiyuki TAKASAKI
IPC: H01J37/32
CPC classification number: H01J37/32266 , H01J37/32449 , H01J2237/141
Abstract: Disclosed is a plasma processing apparatus 10 including a chamber 11, a stage 12, a dielectric member 13, a cover 14, a gas introduction path 15, and an induction coil 16. The induction coil 16 includes a first induction coil 17 installed so as to overlap a central region R1 of the dielectric member 13, and a second induction coil 18 installed so as to overlap a peripheral region R2 outside the central region R1 of the dielectric member 13. The cover 14 has a first gas hole 14c formed at a position overlapping the central region R1 and a second gas hole 14d formed at a position overlapping the peripheral region R2. The gas introduction path 15 has a first gas introduction path 15a communicating with the first gas hole 14c and a second gas introduction path 15b communicating with the second gas hole 14d.
-
公开(公告)号：US20220406660A1
公开(公告)日：2022-12-22
申请号：US17806367
申请日：2022-06-10
Inventor： Shogo OKITA , Hidehiko KARASAKI , Hidefumi SAEKI , Atsushi HARIKAI
IPC: H01L21/78 , H01L21/268
Abstract: An element chip manufacturing method includes a step of preparing a substrate including a semiconductor layer and a wiring layer formed on the semiconductor layer and having a plurality of element regions and a dicing region defining the element regions, a laser grooving step of irradiating a laser beam to the wiring layer at the dicing region, to form an aperture exposing the semiconductor layer, and an individualization step of etching the semiconductor layer exposed from the aperture, with plasma, to divide the substrate into a plurality of element chips. The laser grooving step including a step of irradiating a first laser beam, to form a first groove exposing the semiconductor layer in the dicing region, and a step of irradiating a second laser beam, with a beam center positioned outside a side wall of the first groove, to widen the first groove into the aperture.
-
公开(公告)号：US20220402072A1
公开(公告)日：2022-12-22
申请号：US17806360
申请日：2022-06-10
Inventor： Hidefumi SAEKI , Hidehiko KARASAKI , Shogo OKITA , Atsushi HARIKAI , Akihiro ITOU
IPC: B23K26/364 , B23K26/40 , H01L21/78 , H01L21/3065 , B23K26/0622
Abstract: An element chip manufacturing method includes a step of preparing a substrate including a semiconductor layer and a wiring layer formed on the semiconductor layer, the substrate having element regions and a dicing region defining the element regions, a laser grooving step of irradiating a laser beam to the wiring layer at the dicing region, to form an aperture exposing the semiconductor layer, and a step of etching the semiconductor layer exposed from the aperture, with plasma, to divide the substrate into a plurality of element chips. The laser grooving step includes a step of irradiating a first laser beam having a first pulse width, to remove the wiring layer in an edge portion of the dicing region, and a step of irradiating a second laser beam having a second pulse width which is longer than the first pulse width, to remove the wiring layer inside from the edge portion.
-
公开(公告)号：US20220165577A1
公开(公告)日：2022-05-26
申请号：US17455678
申请日：2021-11-19
Inventor： Toshiyuki TAKASAKI , Shogo OKITA , Akihiro ITOU , Atsushi HARIKAI
IPC: H01L21/3065 , H01L21/78
Abstract: A plasma processing method including: exposing to a first plasma a substrate having a compound semiconductor layer and a mask partially covering a surface of the compound semiconductor layer, to form a protective film at least on the bottom of a groove formed in a region where the compound semiconductor layer is not covered with the mask; removing the protective film at the bottom by exposing the substrate to a second plasma, to expose the compound semiconductor layer; and removing the conductive semiconductor layer exposed at the bottom of the groove by exposing the substrate to a third plasma generated from a gas containing chlorine and/or bromine, while allowing a reaction product between the compound semiconductor layer and the third plasma to accumulate on an upper portion of the groove. The reaction product is removed by applying a high-frequency power to a stage on which the substrate is placed.
-
40.发明申请公开(公告)号：US20210202289A1
公开(公告)日：2021-07-01
申请号：US17116008
申请日：2020-12-09
Inventor： Atsushi HARIKAI , Shogo OKITA
IPC: H01L21/683 , H01L21/3065 , H01L21/311 , H01L21/687 , H01J37/32
Abstract: A plasma processing apparatus for plasma processing a substrate held on a conveying carrier, the carrier including a holding sheet and a frame supporting an outer periphery of the holding sheet. The apparatus includes a controller that controls a plasma generator, an electrostatic adsorption mechanism, and a lifting system, to sequentially execute: an adsorption step allowing the substrate to be adsorbed electrostatically to a stage; an etching step of exposing the substrate adsorbed electrostatically to the stage to an etching plasma; a frame separation step of lifting the support, to separate the frame away from the stage, with at least part of the holding sheet kept in contact with the stage; a holding sheet separation step of separating the holding sheet away from the stage; and a static elimination step of exposing the substrate separated away from the stage to a static elimination plasma.
-
-
-
-
-
-
-
-
-
Search Results
46
records
(took 0.021 seconds)
