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62 条记录 (耗时 0.05 秒)

    Semiconductor device
    31.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07973385B2

    公开(公告)日：2011-07-05

    申请号：US12374550

    申请日：2007-07-23

    申请人： Paul Stribley ,  Christopher Lee ,  John Ellis

    发明人： Paul Stribley ,  Christopher Lee ,  John Ellis

    IPC分类号： H01L29/00 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC分类号： H01L27/08 ,  H01L23/5227 ,  H01L28/10 ,  H01L2924/0002 ,  Y10S257/904 ,  H01L2924/00

    摘要： A semiconductor device including a doped substrate of a first doping polarity and a doped semiconductor material of a second doping polarity. The semiconductor material is on, or in, the substrate, and the second doping polarity is opposite the first doping polarity such that the semiconductor material and the substrate form a diode. The semiconductor device further includes an inductor on or above the semiconductor material, and a pattern in the semiconductor material for reducing eddy currents. The pattern includes a doped semiconductor material of the first doping polarity and a least one trench within the doped semiconductor material of the first doping polarity, wherein, at least at a depth at which the trench is closest to the inductor, the doped semiconductor material of the first doping polarity fully surrounds the trench so that, at least at the depth, the trench does not touch the doped semiconductor material of the second doping polarity.

    摘要翻译： 一种半导体器件，包括具有第一掺杂极性的掺杂衬底和具有第二掺杂极性的掺杂半导体材料。 半导体材料在衬底上或衬底中，并且第二掺杂极性与第一掺杂极性相反，使得半导体材料和衬底形成二极管。 半导体器件还包括在半导体材料上或上方的电感器，以及用于减小涡流的半导体材料中的图案。 该图案包括第一掺杂极性的掺杂半导体材料和第一掺杂极性的掺杂半导体材料内的至少一个沟槽，其中至少在沟槽最接近电感器的深度处，掺杂半导体材料 第一掺杂极性完全围绕沟槽，使得至少在深度处，沟槽不接触第二掺杂极性的掺杂半导体材料。

    Hot runner magnesium casting system and apparatus
    32.
    发明授权
    Hot runner magnesium casting system and apparatus 有权
    热流道镁铸造系统和设备

    公开(公告)号：US07828042B2

    公开(公告)日：2010-11-09

    申请号：US11560416

    申请日：2006-11-16

    申请人： Naiyi Li ,  Ronald Cooper ,  Jim deVries ,  Nanda Gopal ,  Christopher Lee ,  Tom Scholten ,  Raymond Silva

    发明人： Naiyi Li ,  Ronald Cooper ,  Jim deVries ,  Nanda Gopal ,  Christopher Lee ,  Tom Scholten ,  Raymond Silva

    IPC分类号： B22D17/04

    CPC分类号： B22D17/2272

    摘要： A method and apparatus for the casting of metal components is disclosed. The apparatus includes a gooseneck for drawing molten metal from a crucible of hot metal and for forcing the drawn molten metal through the system, a hot runner assembly having a hot runner tip positioned adjacent the mold cavity, and a machine nozzle inserted between the gooseneck and the hot runner assembly. The gooseneck is fitted with a one-way check valve to allow for molten metal to be drawn into the plunger but to stop its passage out of the gooseneck when the metal is forced through the system into the die. A thermal valve is formed within the hot runner tip to provide a metal blockage from the molten metal which prevents the back-flow of molten metal back into the hot runner assembly. Both temperature and flow rate are carefully monitored and controlled.

    摘要翻译： 公开了一种铸造金属部件的方法和装置。 该装置包括用于从熔融金属坩埚中拉出熔融金属并迫使拉拔的熔融金属穿过该系统的鹅颈管，具有位于模腔附近的热流道末端的热流道组件，以及插入在鹅颈管和 热流道组件。 鹅颈管配有单向止回阀，以允许熔融金属被拉入柱塞，但是当金属被迫通过系统进入模具时，阻止其从鹅颈管的通过。 在热流道尖端内形成热阀，以提供熔融金属的金属堵塞，防止熔融金属回流回热流道组件。 温度和流速都要仔细监测和控制。

    Window regulator
    37.
    发明授权
    Window regulator 失效

    公开(公告)号：US5325631A

    公开(公告)日：1994-07-05

    申请号：US36417

    申请日：1993-03-25

    申请人： Christopher Lee ,  Douglas L. Juga

    发明人： Christopher Lee ,  Douglas L. Juga

    IPC分类号： E05F11/48 ,  E05F11/50

    CPC分类号： E05F11/486 ,  E05F11/485 ,  E05F11/505 ,  E05F11/483 ,  E05Y2201/49 ,  E05Y2900/55

    摘要： A window regulator includes a rotatable hub that is coupled to a traveller by a cable, such that rotation of the hub raises and lowers the traveller. The hub is mounted on a driven gear which is rotated by a drive gear. The hub and the driven gear are concentrically mounted around a post, which defines an outer surface that is frictionally engaged by a coil spring that is coupled both to the driven gear and to the hub. The coil spring brakes rotation of the hub when the traveller is pushed downwardly. The drive gear and its associated bushings are removably mounted on the window regulator to allow easy replacement.

    Actuator mount system
    38.
    发明授权
    Actuator mount system 有权
    执行器安装系统

    公开(公告)号：US08562336B2

    公开(公告)日：2013-10-22

    申请号：US13461081

    申请日：2012-05-01

    申请人： Christopher Lee

    发明人： Christopher Lee

    IPC分类号： B29C45/23

    CPC分类号： B29C45/281 ,  B23P17/04 ,  B29C45/2725 ,  B29C45/7331 ,  B29C2045/277 ,  Y10T29/49826

    摘要： A system for mounting an injection molding system actuator to a manifold and a clamp plate comprising: a mount comprised of a thermally conductive material having first and second thermally conductive surfaces, the actuator being mounted to the first thermally conductive surface in thermal communication with the second thermally conductive surface, the clamp plate being mounted in thermal communication with the second thermally conductive surface, the actuator being mounted in thermal communication with the heated manifold; wherein the clamp plate, manifold and mold are assembled together with the actuator and the mount in an assembled operating arrangement such that the second thermally conductive surface is in compressed contact with the clamp plate under a spring force.

    摘要翻译： 一种用于将注塑系统致动器安装到歧管和夹板的系统，包括：由具有第一和第二导热表面的导热材料组成的安装座，所述致动器安装到所述第一导热表面，所述第二导热表面与所述第二导热表面热连通， 导热表面，所述夹板安装成与所述第二导热表面热连通，所述致动器安装成与加热的歧管热连通; 其中夹紧板，歧管和模具与致动器和安装座组装在一起组装的操作装置中，使得第二导热表面在弹簧力下与夹板压缩接触。

    Area efficient and fast static random access memory circuit and method
    39.
    发明授权
    Area efficient and fast static random access memory circuit and method 失效
    区域高效快速静态随机存取电路及方法

    公开(公告)号：US07684257B1

    公开(公告)日：2010-03-23

    申请号：US11958215

    申请日：2007-12-17

    申请人： Christopher Lee ,  Thinh Tran ,  Joseph Tzou ,  Morgan Whately

    发明人： Christopher Lee ,  Thinh Tran ,  Joseph Tzou ,  Morgan Whately

    IPC分类号： G11C7/00 ,  G11C7/10

    CPC分类号： G11C7/1006 ,  G11C11/413

    摘要： Disclosed is an accumulation memory circuit for providing a fast read, modify, and write operation in a single clock cycle time. The memory circuit is configured to read data stored in the memory device at an address. The memory circuit includes a reconfigurable adder unit generating read, accumulate and write output in a single clock cycle. The memory circuit is further configured to minimize data overflow. A high speed accumulation method comprises resetting a memory circuit; reading from an address of the memory circuit; performing internal addition within the memory circuit and rewriting into the address of the memory circuit in a single clock cycle.

    摘要翻译： 公开了一种用于在单个时钟周期时间内提供快速读取，修改和写入操作的累加存储器电路。 存储器电路被配置为以地址读取存储在存储器件中的数据。 存储器电路包括可重构加法器单元，其在单个时钟周期内产生读取，累加和写入输出。 存储器电路还被配置为最小化数据溢出。 高速累积方法包括：重置存储器电路; 从存储器电路的地址读取; 在存储器电路内执行内部加法，并在单个时钟周期内重写到存储器电路的地址。

    SEMICONDUCTOR DEVICE
    40.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20090243034A1

    公开(公告)日：2009-10-01

    申请号：US12374550

    申请日：2007-07-23

    申请人： Paul Stribley ,  Christopher Lee ,  John Ellis

    发明人： Paul Stribley ,  Christopher Lee ,  John Ellis

    IPC分类号： H01L29/86

    CPC分类号： H01L27/08 ,  H01L23/5227 ,  H01L28/10 ,  H01L2924/0002 ,  Y10S257/904 ,  H01L2924/00

    摘要： A semiconductor device including a doped substrate of a first doping polarity and a doped semiconductor material of a second doping polarity. The semiconductor material is on, or in, the substrate, and the second doping polarity is opposite the first doping polarity such that the semiconductor material and the substrate form a diode. The semiconductor device further includes an inductor on or above the semiconductor material, and a pattern in the semiconductor material for reducing eddy currents. The pattern includes a doped semiconductor material of the first doping polarity and a least one trench within the doped semiconductor material of the first doping polarity, wherein, at least at a depth at which the trench is closest to the inductor, the doped semiconductor material of the first doping polarity fully surrounds the trench so that, at least at the depth, the trench does not touch the doped semiconductor material of the second doping polarity.

    摘要翻译： 一种半导体器件，包括具有第一掺杂极性的掺杂衬底和具有第二掺杂极性的掺杂半导体材料。 半导体材料在衬底上或衬底中，并且第二掺杂极性与第一掺杂极性相反，使得半导体材料和衬底形成二极管。 半导体器件还包括在半导体材料上或上方的电感器，以及用于减小涡流的半导体材料中的图案。 该图案包括第一掺杂极性的掺杂半导体材料和第一掺杂极性的掺杂半导体材料内的至少一个沟槽，其中至少在沟槽最接近电感器的深度处，掺杂半导体材料 第一掺杂极性完全围绕沟槽，使得至少在深度处，沟槽不接触第二掺杂极性的掺杂半导体材料。