公开(公告)号：US11817507B2

公开(公告)日：2023-11-14

申请号：US17667655

申请日：2022-02-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Tsutomu Murakawa ,  Hiroki Komagata ,  Katsuaki Tochibayashi ,  Kentaro Sugaya

IPC: H01L29/786

CPC classification number: H01L29/7869

Abstract: A semiconductor device having a high on-state current is provided.
The semiconductor device includes a first oxide; a first conductor and a second conductor provided over the first oxide to be separated from each other; and a second oxide provided over the first oxide and between the first conductor and the second conductor. Each of the first oxide and the second oxide has crystallinity, the first oxide includes a region where a c-axis is aligned substantially perpendicularly to a top surface of the first oxide, and the second oxide includes a region where the c-axis is aligned substantially perpendicularly to the top surface of the first oxide, a region where the c-axis is aligned substantially perpendicularly to a side surface of the first conductor, and a region where the c-axis is aligned substantially perpendicularly to a side surface of the second conductor.

公开(公告)号：US11316051B2

公开(公告)日：2022-04-26

申请号：US16963928

申请日：2019-02-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Katsuaki Tochibayashi ,  Ryota Hodo ,  Kentaro Sugaya ,  Naoto Yamade

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/108 ,  H01L29/24 ,  H01L29/66

Abstract: A semiconductor device includes a transistor including, a first to fifth insulator, a first to third oxide, a first to third conductor. An opening reaching the second oxide is provided in the fourth insulator and the fifth insulator. The third oxide, the third insulator, and the third conductor are arranged sequentially from the inner wall side of the opening so as to fill the opening. In the channel length direction of the transistor, at least part of the fourth insulator in a region where the fourth insulator and the second oxide do not overlap with each other is in contact with the first insulator. In the channel width direction of the transistor, at least part of the third oxide in a region where the third oxide and the second oxide do not overlap with each other is in contact with the first insulator.

公开(公告)号：US11205664B2

公开(公告)日：2021-12-21

申请号：US16770670

申请日：2018-12-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Ryota Hodo ,  Tomoyo Kamogawa ,  Katsuaki Tochibayashi

IPC: H01L27/00 ,  H01L29/00 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

Abstract: A highly reliable semiconductor device having a high on-state current is provided. The semiconductor device includes a first insulator, a second insulator over the first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a first conductor and a second conductor over the second oxide, a third insulator over the first conductor, a fourth insulator over the second conductor, a third oxide over the second oxide, a fifth insulator over the third oxide, a third conductor that is positioned over the fifth insulator and overlaps with the third oxide, a sixth insulator covering the first to fifth insulators, the first oxide, the second oxide, and the first to third conductors, and a seventh insulator over the sixth insulator.

公开(公告)号：US11031403B2

公开(公告)日：2021-06-08

申请号：US16605548

申请日：2018-04-19

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Daisuke Matsubayashi ,  Kiyoshi Kato ,  Katsuaki Tochibayashi ,  Shuhei Nagatsuka

IPC: H01L27/108 ,  H01L27/1156 ,  H01L27/06 ,  H01L29/786 ,  H01L21/311 ,  H01L27/32 ,  H01L27/12

Abstract: A semiconductor device that can be highly integrated is provided. The semiconductor device includes a first transistor, a second transistor, a first capacitor, and a second capacitor. The first transistor includes an oxide over a first insulator, a second insulator over the oxide, a first conductor over the second insulator, a third insulator over the first conductor, a fourth insulator in contact with the second insulator, the first conductor, and the third insulator, and a fifth insulator in contact with the fourth insulator. The second transistor includes an oxide over the first insulator, a sixth insulator over the oxide, a second conductor over the sixth insulator, a seventh insulator over the second conductor, an eighth insulator in contact with the sixth insulator, the second conductor, and the seventh insulator, and a ninth insulator in contact with the eighth insulator. The first capacitor includes an oxide, a tenth insulator over the oxide, and a third conductor over the tenth insulator. The second capacitor includes an oxide, an eleventh insulator over the oxide, and a fourth conductor over the eleventh insulator.

公开(公告)号：US10978563B2

公开(公告)日：2021-04-13

申请号：US16698476

申请日：2019-11-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Katsuaki Tochibayashi ,  Ryota Hodo ,  Shunpei Yamazaki

IPC: H01L29/26 ,  H01L27/108

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a first insulator; a first conductor over the first insulator; a second insulator over the first conductor; a first oxide over the second insulator; second and third conductors over the first oxide; a third insulator over the second and third conductors; a second oxide over the first oxide and between the second and third conductors; a fourth insulator over the second oxide; a fourth conductor over the fourth insulator; a fifth insulator in contact with the third insulator and the second oxide; a sixth insulator in contact with the first, second, third, and fifth insulators, and the second oxide; and a seventh insulator in contact with the fourth and sixth insulators, the second oxide, and the fourth conductor. The first, sixth, and seventh insulators each contain a silicon nitride. The fifth insulator contains an aluminum oxide.

公开(公告)号：US10164120B2

公开(公告)日：2018-12-25

申请号：US15576445

申请日：2016-05-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Motomu Kurata ,  Shinya Sasagawa ,  Katsuaki Tochibayashi ,  Satoru Okamoto ,  Akihisa Shimomura

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/28 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L27/06 ,  H01L27/08 ,  H01L27/088 ,  H01L27/092 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01L27/115 ,  H01L51/50 ,  H01L27/146 ,  H05B33/14 ,  G06F9/32 ,  G06K19/07 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00 ,  H01L27/12 ,  G02F1/1368 ,  H01L27/32

Abstract: A transistor including a semiconductor, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator is manufactured by forming a hard mask layer including a fourth conductor over the second insulator, a third insulator over the fourth conductor, forming an opening portion in the second insulator with the hard mask layer as the mask, eliminating the hard mask layer by forming the opening portion, and forming the first insulator and the first conductor in the opening portion.

公开(公告)号：US09824898B2

公开(公告)日：2017-11-21

申请号：US15429547

申请日：2017-02-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shinya Sasagawa ,  Motomu Kurata ,  Katsuaki Tochibayashi

IPC: H01L29/40 ,  H01L21/44 ,  H01L29/786 ,  H01L29/66 ,  H01L21/4757 ,  H01L29/45 ,  H01L29/49 ,  H01L27/12

CPC classification number: H01L21/44 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/47573 ,  H01L27/1218 ,  H01L27/1225 ,  H01L29/401 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a highly reliable semiconductor device using an oxide semiconductor. The semiconductor device includes a first electrode layer; a second electrode layer positioned over the first electrode layer and including a stacked-layer structure of a first conductive layer and a second conductive layer; and an oxide semiconductor film and an insulating film positioned between the first electrode layer and the second electrode layer in a thickness direction. The first conductive layer and the insulating film have a first opening portion in a region overlapping with the first electrode layer, The oxide semiconductor film has a second opening portion in a region overlapping with the first opening portion. The second conductive layer is in contact with the first electrode layer exposed in the first opening portion and the second opening portion.

公开(公告)号：US09768318B2

公开(公告)日：2017-09-19

申请号：US15019004

申请日：2016-02-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yoshinobu Asami ,  Yutaka Okazaki ,  Motomu Kurata ,  Katsuaki Tochibayashi ,  Shinya Sasagawa ,  Kensuke Yoshizumi ,  Hideomi Suzawa

IPC: H01L29/49 ,  H01L29/786 ,  H01L29/66 ,  H01L21/4757 ,  H01L21/47 ,  H01L21/477 ,  H01L33/00

CPC classification number: H01L29/7869 ,  H01L21/47 ,  H01L21/4757 ,  H01L21/477 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78648 ,  H01L33/00

Abstract: A miniaturized transistor, a transistor with low parasitic capacitance, a transistor with high frequency characteristics, or a semiconductor device including the transistor is provided. The semiconductor device includes a first insulator, an oxide semiconductor over the first insulator, a first conductor and a second conductor that are in contact with the oxide semiconductor, a second insulator that is over the first and second conductors and has an opening reaching the oxide semiconductor, a third insulator over the oxide semiconductor and the second insulator, and a fourth conductor over the third insulator. The first conductor includes a first region and a second region. The second conductor includes a third region and a fourth region. The second region faces the third region with the first conductor and the first insulator interposed therebetween. The second region is thinner than the first region. The third region is thinner than the fourth region.

公开(公告)号：US09570622B2

公开(公告)日：2017-02-14

申请号：US14476921

申请日：2014-09-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shinya Sasagawa ,  Motomu Kurata ,  Katsuaki Tochibayashi

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/02

CPC classification number: H01L21/44 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/47573 ,  H01L27/1218 ,  H01L27/1225 ,  H01L29/401 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a highly reliable semiconductor device using an oxide semiconductor. The semiconductor device includes a first electrode layer; a second electrode layer positioned over the first electrode layer and including a stacked-layer structure of a first conductive layer and a second conductive layer; and an oxide semiconductor film and an insulating film positioned between the first electrode layer and the second electrode layer in a thickness direction. The first conductive layer and the insulating film have a first opening portion in a region overlapping with the first electrode layer. The oxide semiconductor film has a second opening portion in a region overlapping with the first opening portion. The second conductive layer is in contact with the first electrode layer exposed in the first opening portion and the second opening portion.

Abstract translation: 提供使用氧化物半导体的高度可靠的半导体器件。 半导体器件包括第一电极层; 位于所述第一电极层上并包括第一导电层和第二导电层的层叠结构的第二电极层; 以及在厚度方向上位于第一电极层和第二电极层之间的氧化物半导体膜和绝缘膜。 第一导电层和绝缘膜在与第一电极层重叠的区域中具有第一开口部。 氧化物半导体膜在与第一开口部重叠的区域中具有第二开口部。 第二导电层与暴露在第一开口部分和第二开口部分中的第一电极层接触。

公开(公告)号：US09391095B2

公开(公告)日：2016-07-12

申请号：US14104264

申请日：2013-12-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hotaka Maruyama ,  Yoshiaki Oikawa ,  Katsuaki Tochibayashi

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/28 ,  H01L29/04 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/1225 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/28185 ,  H01L27/1229 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/7869

Abstract: An oxide semiconductor layer with excellent crystallinity is formed to enable manufacture of transistors with excellent electrical characteristics for practical application of a large display device, a high-performance semiconductor device, etc. By first heat treatment, a first oxide semiconductor layer is crystallized. A second oxide semiconductor layer is formed over the first oxide semiconductor layer. By second heat treatment, an oxide semiconductor layer including a crystal region having the c-axis oriented substantially perpendicular to a surface is efficiently formed and oxygen vacancies are efficiently filled. An oxide insulating layer is formed over and in contact with the oxide semiconductor layer. By third heat treatment, oxygen is supplied again to the oxide semiconductor layer. A nitride insulating layer containing hydrogen is formed over the oxide insulating layer. By fourth heat treatment, hydrogen is supplied at least to an interface between the second oxide semiconductor layer and the oxide insulating layer.

Abstract translation: 形成具有优异结晶度的氧化物半导体层，以便能够制造具有优异电特性的晶体管，用于实际应用大型显示装置，高性能半导体器件等。通过第一热处理，第一氧化物半导体层结晶。 在第一氧化物半导体层上形成第二氧化物半导体层。 通过第二热处理，有效地形成包括具有取向为基本上垂直于表面的c轴的晶体区域的氧化物半导体层，并且有效地填充氧空位。 氧化物绝缘层形成在氧化物半导体层上并与氧化物半导体层接触。 通过第三次热处理，再次向氧化物半导体层供给氧。 在氧化物绝缘层上形成含有氢的氮化物绝缘层。 通过第四热处理，至少向第二氧化物半导体层和氧化物绝缘层之间的界面供应氢。