公开(公告)号：US20250006846A1

公开(公告)日：2025-01-02

申请号：US18764643

申请日：2024-07-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yukinori SHIMA ,  Shinpei MATSUDA ,  Haruyuki BABA ,  Ryunosuke HONDA

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/778

Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.

公开(公告)号：US20200013865A1

公开(公告)日：2020-01-09

申请号：US16572673

申请日：2019-09-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Akio SUZUKI ,  Shinpei MATSUDA ,  Shunpei YAMAZAKI

IPC: H01L29/423 ,  H01L29/66

Abstract: A transistor which is resistant to a short-channel effect is provided. The transistor includes a first conductor in a ring shape, an oxide semiconductor including a region extending through an inside of a ring of the first conductor, a first insulator between the first conductor and the oxide semiconductor, a second insulator between the first conductor and the first insulator, and a charge trap layer inside the ring of the first conductor. The charge trap layer is inside the second insulator and configured to be in a floating state.

公开(公告)号：US20190280019A1

公开(公告)日：2019-09-12

申请号：US16355913

申请日：2019-03-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yukinori SHIMA ,  Shinpei MATSUDA ,  Haruyuki BABA ,  Ryunosuke HONDA

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/778 ,  H01L29/66

Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.

公开(公告)号：US20170317111A1

公开(公告)日：2017-11-02

申请号：US15494850

申请日：2017-04-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshinori ANDO ,  Shinpei MATSUDA ,  Yuki HATA

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/105 ,  H01L29/423

CPC classification number: H01L27/1225 ,  H01L27/1052 ,  H01L27/1207 ,  H01L27/1233 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device capable of retaining data for a long time is provided. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without an increase in the number of manufacturing steps.

公开(公告)号：US20170309650A1

公开(公告)日：2017-10-26

申请号：US15645251

申请日：2017-07-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiroyuki MIYAKE ,  Kenichi OKAZAKI ,  Masahiko HAYAKAWA ,  Shinpei MATSUDA

IPC: H01L27/12 ,  H01L29/786 ,  G02F1/1343 ,  G02F1/1368

CPC classification number: H01L27/1225 ,  G02F1/134309 ,  G02F1/1368 ,  H01L27/1237 ,  H01L27/124 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device which includes an oxide semiconductor and in which formation of a parasitic channel due to a gate BT stress is suppressed is provided. Further, a semiconductor device including a transistor having excellent electrical characteristics is provided. The semiconductor device includes a transistor having a dual-gate structure in which an oxide semiconductor film is provided between a first gate electrode and a second gate electrode; gate insulating films are provided between the oxide semiconductor film and the first gate electrode and between the oxide semiconductor film and the second gate electrode; and in the channel width direction of the transistor, the first or second gate electrode faces a side surface of the oxide semiconductor film with the gate insulating film between the oxide semiconductor film and the first or second gate electrode.

公开(公告)号：US20170243981A1

公开(公告)日：2017-08-24

申请号：US15450343

申请日：2017-03-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masahiko HAYAKAWA ,  Shinpei MATSUDA ,  Daisuke MATSUBAYASHI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H01L29/66 ,  H01L29/24 ,  H01L29/04

CPC classification number: H01L29/78648 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: Provided is a semiconductor device including a transistor having excellent electrical characteristics (e.g., on-state current, field-effect mobility, or frequency characteristics) or a semiconductor device including a transistor with high reliability. In the channel width direction of a channel-etched transistor in which an oxide semiconductor film is between first and second gate electrodes, the first and second gate electrodes are connected to each other through an opening portion in first and second gate insulating films. In addition, the first and second gate electrodes surround the oxide semiconductor film in a cross-section in the channel width direction, with the first gate insulating film provided between the first gate electrode and the oxide semiconductor film and the second gate insulating film provided between the second gate electrode and the oxide semiconductor film. Furthermore, the channel length of the transistor is 0.5 μm or longer and 6.5 μm or shorter.

公开(公告)号：US20170236842A1

公开(公告)日：2017-08-17

申请号：US15430746

申请日：2017-02-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shinpei MATSUDA ,  Masayuki SAKAKURA ,  Yuki HATA ,  Shuhei NAGATSUKA ,  Yuta ENDO ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1222 ,  H01L27/1225 ,  H01L27/1237 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device with high design flexibility is provided. A first transistor and a second transistor having electrical characteristics different from those of the first transistor are provided over the same layer without significantly increasing the number of manufacturing steps. For example, semiconductor materials with different electron affinities are used for a semiconductor layer in which a channel of the first transistor is formed and a semiconductor layer in which a channel of the second transistor is formed. This allows the threshold voltages of the first transistor and the second transistor to differ from each other. Forming a gate electrode using a damascene process enables miniaturization and high density of the transistors. Furthermore, a highly-integrated semiconductor device is provided.

公开(公告)号：US20170229486A1

公开(公告)日：2017-08-10

申请号：US15412256

申请日：2017-01-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shinpei MATSUDA ,  Masayuki SAKAKURA ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  G11C11/418 ,  G11C11/419 ,  H01L29/786 ,  H01L27/105

CPC classification number: H01L27/1225 ,  G11C11/403 ,  G11C11/418 ,  G11C11/419 ,  G11C29/06 ,  G11C2029/4402 ,  G11C2029/5002 ,  H01L27/1052 ,  H01L27/1207 ,  H01L27/127 ,  H01L29/78648 ,  H01L29/7869

Abstract: To provide a semiconductor device capable of retaining data for a long period. The semiconductor device includes a memory circuit and a retention circuit. The memory circuit includes a first transistor, and the retention circuit includes a second transistor. The memory circuit is configured to write data by turning on the first transistor and to retain the data by turning off the first transistor. The retention circuit is configured to supply a first potential at which the first transistor is turned off to a back gate of the first transistor by turning on the second transistor and to retain the first potential by turning off the second transistor. Transistors having different electrical characteristics are used as the first transistor and the second transistor.

公开(公告)号：US20170179294A1

公开(公告)日：2017-06-22

申请号：US15380502

申请日：2016-12-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kiyoshi KATO ,  Tomoaki ATSUMI ,  Shunpei YAMAZAKI ,  Haruyuki BABA ,  Shinpei MATSUDA

IPC: H01L29/786 ,  H01L27/108 ,  H01L27/088

Abstract: A semiconductor device capable of holding data for a long time is provided. The semiconductor device includes a first transistor, a second transistor, and a circuit. The first transistor includes a first gate and a second gate. The first transistor includes a first semiconductor in a channel formation region. The first gate and the second gate overlap with each other in a region with the first semiconductor provided therebetween. The second transistor includes a second semiconductor in a channel formation region. A first terminal of the second transistor is electrically connected to a gate of the second transistor and the second gate. A second terminal of the second transistor is electrically connected to the circuit. The circuit has a function of generating a negative potential. The second semiconductor has a wider bandgap than the first semiconductor.

公开(公告)号：US20170170326A1

公开(公告)日：2017-06-15

申请号：US15374356

申请日：2016-12-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi TSUBUKU ,  Kazuya SUGIMOTO ,  Tsutomu MURAKAWA ,  Motoki NAKASHIMA ,  Shinpei MATSUDA ,  Noritaka ISHIHARA ,  Daisuke KUROSAKI ,  Toshimitsu OBONAI ,  Hiroshi KANEMURA ,  Junichi KOEZUKA

IPC: H01L29/786 ,  H01L27/105 ,  H03K17/687 ,  H01L29/24 ,  H01L29/423

CPC classification number: H01L29/7869 ,  G09G3/2092 ,  H01L27/1052 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/78696 ,  H03K17/687

Abstract: A transistor in which a change in characteristics is small is provided. A circuit, a semiconductor device, a display device, or an electronic device in which a change in characteristics of the transistor is small is provided. The transistor includes an oxide semiconductor; a channel region is formed in the oxide semiconductor; the channel region contains indium, an element M, and zinc; the element M is one or more selected from aluminum, gallium, yttrium, tin, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium; a gate insulator contains silicon and oxygen whose atomic number is 1.5 times or more as large as the atomic number of silicon; the carrier density of the channel region is higher than or equal to 1×109 cm−3 and lower than or equal to 5×1016 cm−3; and the energy gap of the channel region is higher than or equal to 2.7 eV and lower than or equal to 3.1 eV.