公开(公告)号：US20190051727A1

公开(公告)日：2019-02-14

申请号：US16152850

申请日：2018-10-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu Hosaka ,  Toshimitsu Obonai ,  Yukinori Shima ,  Masami Jintyou ,  Daisuke Kurosaki ,  Takashi Hamochi ,  Junichi Koezuka ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: H01L29/24 ,  H01L27/12 ,  C04B35/622 ,  H01L29/786 ,  H01L29/778 ,  C23C14/58 ,  C23C14/08 ,  C04B35/01 ,  C03C17/245 ,  C04B35/453

CPC classification number: H01L29/24 ,  C03C17/245 ,  C03C2217/23 ,  C03C2218/151 ,  C04B35/01 ,  C04B35/453 ,  C04B35/62218 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/787 ,  C04B2235/96 ,  C23C14/08 ,  C23C14/5853 ,  H01L27/1225 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A metal oxide film includes indium, , ( is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

公开(公告)号：US10205008B2

公开(公告)日：2019-02-12

申请号：US15664353

申请日：2017-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshimitsu Obonai ,  Hironobu Takahashi ,  Yasuharu Hosaka ,  Masahiro Watanabe ,  Takuya Handa ,  Yukinori Shima ,  Takashi Hamochi

IPC: H01L29/786 ,  H01L21/336 ,  H01L29/66 ,  H01L21/02 ,  H01L21/67

Abstract: Provided is a semiconductor device with favorable electrical characteristics. Provided is a semiconductor device with stable electrical characteristics. Provided is a manufacturing method of a semiconductor device with a high yield. The manufacturing method includes a first step of forming an insulating film over a substrate, a second step of transferring the substrate in an atmospheric atmosphere, a third step of heating the insulating film, and a fourth step of forming a metal oxide film. The third step and the fourth step are successively performed in an atmosphere where water vapor partial pressure is lower than water vapor partial pressure in the atmospheric air.

公开(公告)号：US20190019894A1

公开(公告)日：2019-01-17

申请号：US16123406

申请日：2018-09-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Toshinari Sasaki ,  Shuhei Yokoyama ,  Takashi Hamochi

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/45 ,  H01L23/31 ,  H01L29/04 ,  H01L21/385 ,  H01L29/49 ,  H01L29/24 ,  H01L29/66

Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.

公开(公告)号：US10170599B2

公开(公告)日：2019-01-01

申请号：US15147105

申请日：2016-05-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Toshiyuki Miyamoto ,  Masafumi Nomura ,  Takashi Hamochi ,  Shunpei Yamazaki ,  Toshinari Sasaki

IPC: H01L29/78 ,  H01L21/16 ,  H01L21/00 ,  H01L29/24 ,  H01L21/47 ,  H01L29/66 ,  H01L27/12 ,  H01L21/02 ,  H01L29/786 ,  H01L21/4757

Abstract: In a semiconductor device including an oxide semiconductor, the amount of oxygen vacancies is reduced. Moreover, electrical characteristics of a semiconductor device including an oxide semiconductor are improved. The semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, an oxide semiconductor film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the oxide semiconductor film; and over the transistor, a first insulating film covering the gate insulating film, the oxide semiconductor film, and the pair of electrodes; and a second insulating film covering the first insulating film. An etching rate of the first insulating film is lower than or equal to 10 nm/min and lower than an etching rate of the second insulating film when etching is performed at 25° C. with 0.5 weight % of hydrofluoric acid.

公开(公告)号：US09711652B2

公开(公告)日：2017-07-18

申请号：US14878446

申请日：2015-10-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Toshiyuki Miyamoto ,  Masafumi Nomura ,  Takashi Hamochi ,  Kenichi Okazaki

IPC: H01L29/04 ,  H01L29/786 ,  H01L29/423 ,  H01L29/51

CPC classification number: H01L29/7869 ,  H01L29/42384 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor device is provided which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide insulating layer over the gate insulating layer, an oxide semiconductor layer being above and in contact with the oxide insulating layer and overlapping with the gate electrode layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The gate insulating layer includes a silicon film containing nitrogen. The oxide insulating layer contains one or more metal elements selected from the constituent elements of the oxide semiconductor layer. The thickness of the gate insulating layer is larger than that of the oxide insulating layer.

公开(公告)号：US09318317B2

公开(公告)日：2016-04-19

申请号：US14543287

申请日：2014-11-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Toshinari Sasaki ,  Shuhei Yokoyama ,  Takashi Hamochi

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02112 ,  H01L21/02274 ,  H01L21/385 ,  H01L23/3171 ,  H01L29/045 ,  H01L29/24 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/78696

Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.

Abstract translation: 在包括晶体管上的包括氧化物半导体膜和保护膜的晶体管的半导体器件中，在以下条件下形成含有超过化学计量组成的氧的氧化物绝缘膜作为保护膜：放置在处理室中的衬底 抽真空至真空度保持在高于或等于180℃且低于或等于260℃的温度; 将源气体引入处理室，使得处理室中的压力设定为高于或等于100Pa且小于或等于250Pa; 并且将高于或等于0.17W / cm 2且低于或等于0.5W / cm 2的高频功率供应到设置在处理室中的电极。

公开(公告)号：US20150187953A1

公开(公告)日：2015-07-02

申请号：US14582273

申请日：2014-12-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Takashi Hamochi ,  Yasutaka Nakazawa ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/417 ,  H01L27/12 ,  H01L29/40 ,  H01L29/04

CPC classification number: H01L29/78696 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/7869 ,  H01L2029/7863

Abstract: A novel semiconductor device including an oxide semiconductor is provided. In particular, a planar semiconductor device including an oxide semiconductor is provided. A semiconductor device including an oxide semiconductor and having large on-state current is provided. The semiconductor device includes an oxide insulating film, an oxide semiconductor film over the oxide insulating film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a gate insulating film between the source electrode and the drain electrode, and a gate electrode overlapping the oxide semiconductor film with the gate insulating film. The oxide semiconductor film includes a first region overlapped with the gate electrode and a second region not overlapped with the gate electrode, the source electrode, and the drain electrode. The first region and the second region have different impurity element concentrations. The gate electrode, the source electrode, and the drain electrode contain the same metal element.

Abstract translation: 提供了包括氧化物半导体的新型半导体器件。 特别地，提供了包括氧化物半导体的平面半导体器件。 提供包括氧化物半导体并具有大导通电流的半导体器件。 半导体器件包括氧化物绝缘膜，氧化物绝缘膜上的氧化物半导体膜，与氧化物半导体膜接触的源极和漏电极，源极和漏极之间的栅极绝缘膜，以及栅极 电极与氧化物半导体膜与栅极绝缘膜重叠。 氧化物半导体膜包括与栅电极重叠的第一区域和不与栅电极，源电极和漏电极重叠的第二区域。 第一区和第二区具有不同的杂质元素浓度。 栅电极，源电极和漏电极含有相同的金属元素。

公开(公告)号：US12176419B2

公开(公告)日：2024-12-24

申请号：US17427236

申请日：2020-02-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takashi Hamochi ,  Kenichi Okazaki ,  Satoru Idojiri ,  Yasutaka Nakazawa

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/786

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. A highly reliable display device is provided. A method for fabricating the semiconductor device includes a step of forming a semiconductor layer including a metal oxide; a step of forming, over the semiconductor layer, a first conductive layer and a second conductive layer that are apart from each other over the semiconductor layer; a step of performing plasma treatment using a mixed gas including an oxidizing gas and a reducing gas on a region where the semiconductor layer is exposed; a step of forming a first insulating layer over the semiconductor layer, the first conductive layer, and the second conductive layer; and a step of forming a second insulating layer over the first insulating layer. The first insulating layer is formed by a plasma-enhanced chemical vapor deposition method using a mixed gas including a gas containing silicon, an oxidizing gas, and an ammonia gas. The first insulating layer is formed successively after the plasma treatment without exposure to the air.

公开(公告)号：US12142688B2

公开(公告)日：2024-11-12

申请号：US18240775

申请日：2023-08-31

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Takashi Hamochi ,  Yasutaka Nakazawa

IPC: H01L29/786 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/10 ,  H01L29/45 ,  H10K59/121

Abstract: A semiconductor device comprising an oxide semiconductor film, a gate electrode, a first insulating film, a source electrode, a drain electrode, and a second insulating film is provided. Each of a top surface of the gate electrode, a top surface of the source electrode, and a top surface of the drain electrode comprises a region in contact with the second insulating film. A top surface of the first insulating film comprises a region in contact with the gate electrode and a region in contact with the second insulating film and overlapping with the oxide semiconductor film in a cross-sectional view of the oxide semiconductor film. The oxide semiconductor film comprises a region in contact with the first insulating film and a region in contact with the second insulating film and adjacent to the region in contact with the first insulating film in the cross-sectional view.

公开(公告)号：US11107930B2

公开(公告)日：2021-08-31

申请号：US16888892

申请日：2020-06-01

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasutaka Nakazawa ,  Junichi Koezuka ,  Takashi Hamochi

IPC: H01L29/786 ,  H01L27/146 ,  H01L27/108 ,  H01L29/66 ,  H01L27/15 ,  H01L29/45 ,  H01L27/12 ,  H01L21/768 ,  H01L29/417 ,  H01L27/088 ,  H01L21/8258 ,  H01L27/06

Abstract: A semiconductor device including an oxide semiconductor film that includes a transistor with excellent electrical characteristics is provided. It is a semiconductor device including a transistor. The transistor includes a gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, and a second insulating film. The source electrode and the drain electrode each include a first conductive film, a second conductive film over and in contact with the first conductive film, and a third conductive film over and in contact with the second conductive film. The second conductive film contains copper, the first conductive film and the third conductive film include a material that inhibits diffusion of copper, and an end portion of the second conductive film includes a region containing copper and silicon.