公开(公告)号：US20180175210A1

公开(公告)日：2018-06-21

申请号：US15896925

申请日：2018-02-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Akiharu MIYANAGA ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Junichi KOEZUKA ,  Motoki NAKASHIMA ,  Masahiro TAKAHASHI ,  Shunsuke ADACHI ,  Takuya HIROHASHI

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L29/24 ,  H01L29/04 ,  H01L29/49

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.

公开(公告)号：US20180151596A1

公开(公告)日：2018-05-31

申请号：US15879506

申请日：2018-01-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Masashi TSUBUKU ,  Noritaka ISHIHARA ,  Masashi OOTA

IPC: H01L27/12 ,  H01L21/66 ,  G01N23/207 ,  G02F1/1368 ,  C23C14/08 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nφ.

公开(公告)号：US20160351721A1

公开(公告)日：2016-12-01

申请号：US15232896

申请日：2016-08-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Akiharu MIYANAGA ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Junichi KOEZUKA ,  Motoki NAKASHIMA ,  Masahiro TAKAHASHI ,  Shunsuke ADACHI ,  Takuya HIROHASHI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.

公开(公告)号：US20160190232A1

公开(公告)日：2016-06-30

申请号：US15063733

申请日：2016-03-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Masashi TSUBUKU ,  Masashi OOTA

IPC: H01L29/04 ,  H01L29/26 ,  H01L29/786

CPC classification number: H01L29/04 ,  H01L29/045 ,  H01L29/24 ,  H01L29/247 ,  H01L29/26 ,  H01L29/7869 ,  H01L29/78693

Abstract: A highly reliable semiconductor device including an oxide semiconductor is provided. Provided is a semiconductor device including an oxide semiconductor layer, an insulating layer in contact with the oxide semiconductor layer, a gate electrode layer overlapping with the oxide semiconductor layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The oxide semiconductor layer includes a first region having a crystal whose size is less than or equal to 10 nm and a second region which overlaps with the insulating layer with the first region provided therebetween and which includes a crystal part whose c-axis is aligned in a direction parallel to a normal vector of the surface of the oxide semiconductor layer.

公开(公告)号：US20160118658A1

公开(公告)日：2016-04-28

申请号：US14920650

申请日：2015-10-22

Applicant: Semiconductor Energy Laboratory Co., LTD.

Inventor： Takahiro KAWAKAMI ,  Teruaki OCHIAI ,  Shuhei YOSHITOMI ,  Takuya HIROHASHI ,  Mako MOTOYOSHI ,  Yohei MOMMA ,  Junya GOTO

IPC: H01M4/505 ,  H01M4/36

CPC classification number: H01M4/505 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/366 ,  H01M2220/30

Abstract: To increase capacity per weight of a power storage device, a particle includes a first region, a second region in contact with at least part of a surface of the first region and located on the outside of the first region, and a third region in contact with at least part of a surface of the second region and located on the outside of the second region. The first and the second regions contain lithium and oxygen. At least one of the first region and the second region contains manganese. At least one of the first and the second regions contains an element M. The first region contains a first crystal having a layered rock-salt structure. The second region contains a second crystal having a layered rock-salt structure. An orientation of the first crystal is different from an orientation of the second crystal.

Abstract translation: 为了增加蓄电装置的重量，颗粒包括第一区域，与第一区域的表面的至少一部分接触并位于第一区域的外部的第二区域和接触的第三区域 具有第二区域的表面的至少一部分并且位于第二区域的外侧。 第一和第二区域包含锂和氧。 第一区域和第二区域中的至少一个含有锰。 第一区域和第二区域中的至少一个包含元素M.第一区域包含具有层状岩盐结构的第一晶体。 第二区域包含具有层状岩盐结构的第二晶体。 第一晶体的取向与第二晶体的取向不同。

公开(公告)号：US20150294994A1

公开(公告)日：2015-10-15

申请号：US14688232

申请日：2015-04-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Masashi TSUBUKU ,  Noritaka ISHIHARA ,  Masashi OOTA

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  C23C14/086 ,  G01N23/207 ,  G02F1/1368 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L22/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

Abstract translation: 提供了包括晶体部分并且具有高度稳定的物理性质的金属氧化物膜。 晶体部分的尺寸小于或等于10nm，这允许在测量面积大于或等于5nm＆phgr时观察金属氧化物膜横截面的纳米束电子衍射图中的周向排列的斑点 ; 小于等于10nm。

公开(公告)号：US20150118790A1

公开(公告)日：2015-04-30

申请号：US14586056

申请日：2014-12-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Takuya HIROHASHI ,  Masahiro TAKAHASHI ,  Takashi SHIMAZU

IPC: H01L21/02 ,  H01L29/66

CPC classification number: H01L29/66742 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02502 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869

Abstract: A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

Abstract translation: 可以使用较大的衬底，并且可以通过形成具有高结晶度的氧化物半导体层来制造具有期望的高场敏性迁移率的晶体管，由此大尺寸显示装置，高性能半导体器件， 等可以投入实际使用。 在衬底上形成第一多组分氧化物半导体层，并在其上形成单组分氧化物半导体层; 然后通过在500℃至1000℃（包括端值）进行热处理从表面向内部进行晶体生长，优选550℃至750℃，从而使第一多组分氧化物半导体层 包括单晶区域和形成包括单晶区域的单组分氧化物半导体层; 并且包括单晶区域的第二多分量氧化物半导体层堆叠在包括单晶区域的单组分氧化物半导体层上。

公开(公告)号：US20150104901A1

公开(公告)日：2015-04-16

申请号：US14574964

申请日：2014-12-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L21/263 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L21/2636 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/12 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

Abstract translation: 本发明的目的是提供具有良好电气特性的高度可靠的半导体器件以及包括半导体器件作为开关元件的显示器件。 在包括氧化物半导体层的晶体管中，设置在氧化物半导体层的至少一个表面侧上的针状晶体在垂直于该表面的c轴方向上生长，并且包括平行于该表面的ab平面，以及除了 针状晶体组是无定形区域或非晶态和微晶体混合的区域。 因此，可以形成具有良好电特性的高可靠性半导体器件。

公开(公告)号：US20130299827A1

公开(公告)日：2013-11-14

申请号：US13947334

申请日：2013-07-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L29/12

CPC classification number: H01L29/78696 ,  H01L21/2636 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/12 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

公开(公告)号：US20240055533A1

公开(公告)日：2024-02-15

申请号：US18383526

申请日：2023-10-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/04

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

Abstract: To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.