公开(公告)号：US20230208381A1

公开(公告)日：2023-06-29

申请号：US17994706

申请日：2022-11-28

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Moon Chul LEE ,  Kwang Su KIM ,  Jin Woo YI ,  Jae Hyoung GIL ,  Yong Suk KIM ,  Dong Hyun PARK

IPC: H03H9/02 ,  H03H9/13 ,  H03H9/54

CPC classification number: H03H9/02015 ,  H03H9/132 ,  H03H9/131 ,  H03H9/54

Abstract: A bulk acoustic resonator includes a substrate, a frequency control layer changing a resonant frequency or antiresonant frequency of the bulk acoustic resonator according to a thickness of the frequency control layer, a piezoelectric layer disposed between the frequency control layer and the substrate, a first electrode disposed between the piezoelectric layer and the substrate, a second electrode disposed between the piezoelectric layer and the frequency control layer, a metal layer connected to the first electrode or the second electrode, and a protective layer disposed between the second electrode and the frequency control layer, wherein the frequency control layer covers a larger area than that of the protective layer.

公开(公告)号：US20220200565A1

公开(公告)日：2022-06-23

申请号：US17475716

申请日：2021-09-15

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  Seung Wook PARK ,  Seong Hun NA ,  Jae Hyun JUNG ,  Yeong Gyu LEE ,  Moon Chul LEE ,  Jin Suk SON ,  Jae Goon AUM

IPC: H03H9/10 ,  H03H9/05 ,  H03H9/17

Abstract: A bulk-acoustic wave resonator package includes a package substrate; a cover bonded to the package substrate; an acoustic wave resonator accommodated in an accommodation space defined by the package substrate and the cover; a conductive wire disposed in the accommodation space to electrically connect the acoustic wave resonator to the package substrate; and a bonding portion to fixedly couple the acoustic wave resonator to the package substrate. The bonding portion includes an adhesive member including silicon.

公开(公告)号：US20200373900A1

公开(公告)日：2020-11-26

申请号：US16992434

申请日：2020-08-13

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Tae Yoon KIM ,  Sang Kee YOON ,  Chang Hyun LIM ,  Jong Woon KIM ,  Moon Chul LEE

IPC: H03H9/02 ,  H03H9/54 ,  H03H9/17 ,  H03H9/13 ,  H01L41/053 ,  H01L41/29 ,  H01L41/31 ,  H03H3/02

Abstract: An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 Å≤ΔMg≤170 Å may be satisfied, ΔMg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.

公开(公告)号：US20180337656A1

公开(公告)日：2018-11-22

申请号：US15814869

申请日：2017-11-16

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Hun LEE ,  Chang Hyun LIM ,  Tae Yoon KIM ,  Moon Chul LEE

IPC: H03H9/125 ,  H03H9/17

CPC classification number: H03H9/125 ,  H03H9/13 ,  H03H9/171 ,  H03H9/174 ,  H03H9/205

Abstract: A bulk acoustic wave resonator includes a substrate including a first via and a second via, a lower electrode connection member, a lower electrode, a piezoelectric layer, an upper electrode, and an upper electrode connection member spaced apart from the lower electrode connection member. The lower electrode, the piezoelectric layer, and the upper electrode constitute a resonant portion. The lower electrode connection member electrically connects the lower electrode to the first via and supports a first edge portion of the resonant portion. The upper electrode connection member electrically connects the upper electrode to the second via and supports a second edge portion of the resonant portion. Either one or both of the upper electrode connection member and the lower electrode connection member includes a respective extension portion connected to a respective one of the first via and the second via that is disposed below the resonant portion.

公开(公告)号：US20180309427A1

公开(公告)日：2018-10-25

申请号：US15797224

申请日：2017-10-30

Applicant: Samsung Electro-Mechanics Co., Ltd

Inventor： Tae Yoon KIM ,  Moon Chul LEE ,  Yoon Sok PARK

IPC: H03H9/10 ,  H03H3/02 ,  H03H9/17 ,  H03H9/02

CPC classification number: H03H9/1014 ,  H03H3/02 ,  H03H9/02047 ,  H03H9/02157 ,  H03H9/173

Abstract: A bulk acoustic wave resonator includes: support members disposed between air cavities; a resonant part including a first electrode, a piezoelectric layer, and a second electrode sequentially disposed above the air cavities and on the support members; and a wiring electrode connected either one or both of the first electrode and the second electrode, and disposed above one of the air cavities, wherein a width of an upper surface of the support members is greater than a width of a lower surface of the support members, and side surfaces of the support members connecting the upper surface and the lower surface to each other are inclined.

公开(公告)号：US20180048287A1

公开(公告)日：2018-02-15

申请号：US15486806

申请日：2017-04-13

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  Hwa Sun LEE ,  Hyun Min HWANG ,  Moon Chul LEE ,  Sung Sun KIM ,  Tae Yoon KIM

IPC: H03H9/17 ,  H01L41/18 ,  H01L41/047

CPC classification number: H03H9/177 ,  H01L41/0477 ,  H01L41/18 ,  H03H9/02118 ,  H03H9/171 ,  H03H9/173

Abstract: A bulk acoustic resonator may include a substrate; a resonating portion including a first electrode layer, a piezoelectric layer, and a second electrode layer which are sequentially stacked on the substrate, and partitioned into an active region and a non-active region; and a frame electrode layer including frame electrodes disposed within the active region to be spaced apart from each other along an outer circumference portion of the active region.

公开(公告)号：US20180019726A1

公开(公告)日：2018-01-18

申请号：US15638809

申请日：2017-06-30

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Sung HAN ,  Jae Chang LEE ,  Won HAN ,  Tae Yoon KIM ,  Jong Woon KIM ,  Tae Kyung LEE ,  Moon Chul LEE ,  Tae Hun LEE ,  Sung Min CHO ,  In Young KANG

IPC: H03H9/10 ,  H03H9/02 ,  H03H9/17 ,  H03H9/54

CPC classification number: H03H9/1014 ,  H03H9/02086 ,  H03H9/02102 ,  H03H9/02118 ,  H03H9/02157 ,  H03H9/172 ,  H03H9/173 ,  H03H9/54

Abstract: A bulk acoustic wave resonator device includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer disposed over a portion of the lower electrode; an upper electrode disposed on the piezoelectric layer; and a shape control layer covering an edge of a cavity disposed between the substrate and the lower electrode, wherein tensile stress is applied to the shape control layer during formation of the shape control layer.

公开(公告)号：US20180013397A1

公开(公告)日：2018-01-11

申请号：US15621552

申请日：2017-06-13

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Chang Hyun LIM ,  Moon Chul LEE ,  Won HAN ,  Tae Kyung LEE ,  Dae Ho KIM

IPC: H03H9/02 ,  H03H3/02 ,  H03H9/10 ,  H03H9/17

CPC classification number: H03H9/02015 ,  H03H3/02 ,  H03H9/02047 ,  H03H9/02118 ,  H03H9/1007 ,  H03H9/171 ,  H03H9/173 ,  H03H2003/021

Abstract: A bulk acoustic wave filter device includes a substrate, a lower electrode on the substrate, a piezoelectric layer covering at least a portion of the lower electrode, and an upper electrode covering at least a portion of the piezoelectric layer. The upper electrode has a density reduction layer disposed on at least a portion thereof, except a central portion of a resonance region of the bulk acoustic wave filter device that deforms and vibrates with the piezoelectric layer during activation of the piezoelectric layer. The density reduction layer has a density lower than a density of other portions of the upper electrode.

公开(公告)号：US20160315244A1

公开(公告)日：2016-10-27

申请号：US14994848

申请日：2016-01-13

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Khudoyberdiyev KHURSHIDJON ,  Duck Hwan KIM ,  Yeong Gyu LEE ,  Ho Joon PARK ,  Moon Chul LEE

IPC: H01L41/107 ,  H03H9/17 ,  H01L41/083 ,  H03H3/02 ,  H01L41/29 ,  H01L41/312

CPC classification number: H03H9/17 ,  H03H3/02 ,  H03H9/1014 ,  H03H9/173

Abstract: In examples, there is provided a bulk acoustic wave resonator including a substrate; a resonating part including a first electrode, a piezoelectric layer, and a second electrode, laminated on an upper surface of the substrate, a cap bonded to the substrate by a bonding agent; and a sealing layer formed on an externally exposed surface of the bonding agent. This structure provides for a bulk acoustic wave resonator with improved reliability.

Abstract translation: 在实施例中，提供了包括基板的体声波谐振器; 包括层叠在基板的上表面上的第一电极，压电层和第二电极的共振部，通过接合剂与基板接合的盖; 以及形成在接合剂的外露面上的密封层。 该结构提供了具有改进的可靠性的体声波谐振器。

公开(公告)号：US20160164487A1

公开(公告)日：2016-06-09

申请号：US14885604

申请日：2015-10-16

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Jea Shik SHIN ,  Moon Chul LEE ,  Chul Soo KIM

IPC: H03H9/58 ,  H03H9/02 ,  H03H9/205

CPC classification number: H03H9/605 ,  H03H9/173 ,  H03H9/58

Abstract: A bulk acoustic wave filter may include: a first resonator part including one or more first bulk acoustic wave resonators connected between a signal port for transmitting or receiving a signal and a node connected to an antenna port; and a second resonator part including one or more second bulk acoustic wave resonators connected between the signal port and a ground, wherein a quality factor (IF) value of the one or more first bulk acoustic wave resonators is less than a IF value of the one or more second bulk acoustic wave resonators.

Abstract translation: 体声波滤波器可以包括：第一谐振器部分，包括连接在用于发送或接收信号的信号端口与连接到天线端口的节点之间的一个或多个第一体声波谐振器; 以及包括连接在所述信号端口和地之间的一个或多个第二体声波谐振器的第二谐振器部分，其中所述一个或多个第一体声波谐振器的质量因子（IF）值小于所述第一体声波谐振器的IF值 或更多的第二体声波谐振器。