公开(公告)号：US20200332188A1

公开(公告)日：2020-10-22

申请号：US16850119

申请日：2020-04-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun MIN ,  Eun Joo JANG ,  Yong Wook KIM

IPC: C09K11/88 ,  C09K11/08 ,  C09K11/02 ,  H01L27/32

Abstract: A nanoplatelet including a two-dimensional template including a first semiconductor nanocrystal; and a first shell including a second semiconductor nanocrystal disposed on a surface of the two-dimensional template, the second semiconductor nanocrystal having a composition different from the first semiconductor nanocrystal, wherein the second semiconductor nanocrystal includes a Group III-V compound, and wherein the nanoplatelet does not include cadmium.

公开(公告)号：US20200024512A1

公开(公告)日：2020-01-23

申请号：US16519188

申请日：2019-07-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun MIN ,  Seon-Yeong KIM ,  Eun Joo JANG ,  Hyo Sook JANG ,  Soo Kyung KWON ,  Yong Wook KIM

IPC: C09K11/70 ,  C09K11/62 ,  C09K11/88 ,  H01L29/12

Abstract: A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.

公开(公告)号：US20190006556A1

公开(公告)日：2019-01-03

申请号：US16111848

申请日：2018-08-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Garam PARK ,  Tae Hyung KIM ,  Eun Joo JANG ,  Hyo Sook JANG ,  Shin Ae JUN ,  Yongwook KIM ,  Taekhoon KIM ,  Jihyun MIN ,  Yuho WON

IPC: H01L33/04 ,  C09K11/88 ,  C09K11/70 ,  C09K11/61 ,  C09K11/02 ,  H01L33/32 ,  H01L33/30 ,  H01L33/28 ,  H01L33/24 ,  H01L33/34

CPC classification number: H01L33/04 ,  C09K11/025 ,  C09K11/615 ,  C09K11/70 ,  C09K11/883 ,  H01L33/24 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  H01L33/34

Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.

公开(公告)号：US20180039103A1

公开(公告)日：2018-02-08

申请号：US15671369

申请日：2017-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Joo JANG ,  Chil Hee CHUNG ,  Tae Hyung KIM ,  Jihyun MIN ,  Hyo Sook JANG ,  Dae Young CHUNG

IPC: G02F1/017 ,  H01L51/50

CPC classification number: G02F1/01716 ,  B82Y20/00 ,  C09K11/00 ,  C09K11/70 ,  G02F1/01725 ,  G02F1/3556 ,  G02F2/02 ,  G02F2001/01791 ,  H01L27/283 ,  H01L27/3225 ,  H01L51/502 ,  H01L51/5296 ,  H05B33/14

Abstract: An electronic device includes: an anode and a cathode facing each other; a quantum dot emission layer disposed between the anode and the cathode and including a plurality of quantum dots; and a light emitting source, wherein the quantum dot emission layer is configured to receive electrical energy from the anode and the cathode and to emit light having a first wavelength, wherein the quantum dot emission layer and the light emitting source are configured so that the light emitting source provides the quantum emission layer with light having a second wavelength, and the plurality of quantum dots are excited by the light having the second wavelength and emit light having a third wavelength, wherein the anode, the cathode, or a combination thereof is a light transmitting electrode, and the light of the first wavelength and the light of the third wavelength are emitted through the light transmitting electrode.

公开(公告)号：US20170186922A1

公开(公告)日：2017-06-29

申请号：US15393632

申请日：2016-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Hyung KIM ,  Jihyun MIN ,  Yongwook KIM ,  Eun Joo JANG

IPC: H01L33/50 ,  C09K11/70 ,  F21V8/00 ,  C09K11/66 ,  G02F1/1335 ,  H01L27/15 ,  C09K11/88

CPC classification number: G02B6/005 ,  C09K11/665 ,  C09K11/703 ,  C09K11/88 ,  G02F1/133514 ,  G02F2001/133614 ,  G02F2202/36

Abstract: An electronic device includes, a light source having a peak emission at a wavelength between about 440 nm to about 480 nm; and a photoconversion layer disposed on the light source, wherein the photoconversion layer includes a first quantum dot which emits red light and a second quantum dot which emits green light, wherein at least one of the first quantum dot and the second quantum dot has a perovskite crystal structure and includes a compound represented by Chemical Formula 1: AB′X3+α  Chemical Formula 1 wherein A is a Group IA metal, NR4+, or a combination thereof, B′ is a Group IVA metal, X is a halogen, BF4−, or a combination thereof, and α is 0 to 3.

公开(公告)号：US20170179338A1

公开(公告)日：2017-06-22

申请号：US15386512

申请日：2016-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Garam PARK ,  Tae Hyung KIM ,  Eun Joo JANG ,  Hyo Sook JANG ,  Shin Ae JUN ,  Yongwook KIM ,  Taekhoon KIM ,  Jihyun MIN ,  Yuho WON

IPC: H01L33/04 ,  H01L33/34 ,  H01L33/32 ,  H01L33/30 ,  H01L33/24 ,  H01L33/28

CPC classification number: H01L33/04 ,  C09K11/025 ,  C09K11/615 ,  C09K11/70 ,  C09K11/883 ,  H01L33/24 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  H01L33/34

Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.

公开(公告)号：US20170121598A1

公开(公告)日：2017-05-04

申请号：US15335700

申请日：2016-10-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun MIN ,  Eun Joo JANG ,  Yongwook KIM ,  Garam PARK

IPC: C09K11/02 ,  C09K11/61 ,  C08K3/16 ,  C09K11/88

CPC classification number: C09K11/025 ,  B82Y20/00 ,  B82Y40/00 ,  C08K3/16 ,  C08K2201/001 ,  C09K11/02 ,  C09K11/616 ,  C09K11/665 ,  C09K11/88 ,  C09K11/881 ,  C09K11/883 ,  H01L27/322 ,  H01L2251/5369 ,  Y10S977/774 ,  Y10S977/896 ,  Y10S977/95

Abstract: A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1: ABX3+α  Chemical Formula 1 wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BF4, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers

公开(公告)号：US20170115529A1

公开(公告)日：2017-04-27

申请号：US15238127

申请日：2016-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung KIM ,  Eun Joo JANG ,  Hyun A KANG ,  Yongwook KIM ,  Jihyun MIN ,  Jeong Hee LEE ,  Shin Ae JUN ,  Oul CHO

IPC: G02F1/1335 ,  H01L33/50 ,  H01L33/56 ,  F21V8/00

CPC classification number: G02F1/133603 ,  B82Y20/00 ,  B82Y30/00 ,  G02B6/0026 ,  G02B6/0046 ,  G02B6/0051 ,  G02B6/0068 ,  G02B6/0073 ,  G02F1/1336 ,  G02F2001/133614 ,  G02F2202/36 ,  H01L33/502 ,  H01L33/504 ,  Y10S977/774 ,  Y10S977/825 ,  Y10S977/95 ,  Y10S977/952

Abstract: A light source includes a light emitting element and a light conversion layer configured to convert light emitted from the light emitting element into white light; wherein the light conversion layer includes a matrix resin and a quantum dot, wherein the white light includes a red light component, a green light component, and a blue light component each having a color purity configured to display a color gamut having a concordance rate of greater than or equal to about 99.0% with an Adobe RGB color gamut of a display device, and wherein the green light component has a peak wavelength of about 525 nanometers to about 528 nanometers and a full width at half maximum of less than or equal to about 40 nanometers, and a red light component having a peak wavelength of about 625 nanometers to about 645 nanometers.