Flash memory device and program method
    31.
    发明授权
    Flash memory device and program method 有权
    闪存设备和程序方法

    公开(公告)号:US08867275B2

    公开(公告)日:2014-10-21

    申请号:US13625114

    申请日:2012-09-24

    CPC classification number: G11C16/10 G11C11/5621 G11C16/06

    Abstract: Disclosed is a flash memory device and programming method that includes; receiving buffer data and determining between a high-speed mode and a reliability mode for buffer data, and upon determining the reliability mode storing the buffer data in a first buffer region, and upon determining the high-speed mode storing the buffer data in a second buffer region. The memory cell array of the flash memory including a main region and a separately designated buffer region divided into the first buffer region and second buffer region.

    Abstract translation: 公开了一种闪速存储器件和编程方法,包括: 接收缓冲器数据,并在缓冲器数据的高速模式和可靠性模式之间确定,并且在确定将缓冲器数据存储在第一缓冲区域中的可靠性模式时,并且在确定将第二缓冲器数据存储在第二缓冲器数据中的高速模式 缓冲区。 闪速存储器的存储单元阵列包括分为第一缓冲区域和第二缓冲区域的主区域和单独指定的缓冲区域。

    NONVOLATILE MEMORY DEVICE WITH FLAG CELLS AND USER DEVICE INCLUDING THE SAME
    32.
    发明申请
    NONVOLATILE MEMORY DEVICE WITH FLAG CELLS AND USER DEVICE INCLUDING THE SAME 有权
    具有标记单元的非易失性存储器件和包括其的用户器件

    公开(公告)号:US20130279250A1

    公开(公告)日:2013-10-24

    申请号:US13804128

    申请日:2013-03-14

    Abstract: A nonvolatile memory device includes a flag cell configured to store flag information, a plurality of dummy cells adjacent to the flag cell, and program control logic configured to control a program operation on the flag cell and a dummy program operation on the plurality of dummy cells. When the program operation on the flag cell is performed, the program control logic performs the dummy program operation on at least one of the plurality of dummy cells.

    Abstract translation: 非易失性存储器件包括:标志单元,被配置为存储标志信息,与标志单元相邻的多个虚设单元;以及程序控制逻辑,被配置为控制对所述标志单元的编程操作,以及对所述多个虚设单元进行虚拟程序操作 。 当执行对标志单元的编程操作时,程序控制逻辑对多个虚设单元中的至少一个执行虚拟程序操作。

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