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公开(公告)号：US10957833B2
公开(公告)日：2021-03-23
申请号：US16356283
申请日：2019-03-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Tan Sakong , Yong Il Kim , Han Kyu Seong , Ji Hye Yeon , Chung Sun Lee , Ji Hwan Hwang
IPC: H01L33/00 , H01L33/62 , H01L25/075 , H01L27/12 , H01L23/00
Abstract: A light emitting diode display device includes a display board comprising a plurality of unit pixels, a drive circuit board including a plurality of drive circuit regions corresponding to the plurality of unit pixels, and a plurality of bumps interposed between the plurality of unit pixels and the plurality of drive circuit regions. The plurality of unit pixels comprises a first unit pixel including a first P electrode. The plurality of drive circuit regions comprises a first drive circuit region corresponding to the first unit pixel and a first pad connected to a first drive transistor, the plurality of bumps includes a first solder in contact with the first pad, and a first bump on the first solder and including a first filler in contact with the first P electrode, the first solder includes at least one of tin and silver, and the first filler includes copper or nickel.
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公开(公告)号：US10714667B2
公开(公告)日：2020-07-14
申请号：US16020071
申请日：2018-06-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hye Seok Noh , Young Jin Choi , Yong Il Kim , Han Kyu Seong , Dong Gun Lee , Jin Sub Lee
IPC: H01L33/00 , H01L33/62 , H01L33/50 , H04N5/225 , H01L33/26 , H01L33/56 , H01L27/15 , H01L33/40 , H01L25/075
Abstract: A method of manufacturing a light emitting device includes forming light emitting devices on a support portion, each of the light emitting devices including first to third light emitting cells respectively emitting light of different colors; supplying test power to at least a portion of the light emitting devices using a multi-probe; acquiring an image from the light emitted from the portion of the light emitting devices to which the test power is supplied using an image sensor; identifying normal light emitting devices of the portion of the light emitting devices by determining whether a defect is present in each of the light emitting devices of the portion of the light emitting devices by comparing the image acquired by the image sensor with a reference image; and based on the identifying step, measuring optical characteristics of each of the light emitting devices identified as normal of the portion of the light emitting devices.
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公开(公告)号：US10686103B2
公开(公告)日：2020-06-16
申请号：US15984959
申请日：2018-05-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ji Hye Yeon , Han Kyu Seong , Yong Il Kim , Jung Sub Kim
IPC: H01L33/50 , F21K9/233 , H01L25/075 , F21V23/00 , F21W131/103 , F21Y113/00 , F21Y105/10 , F21Y115/10 , F21Y113/13 , H05B45/20
Abstract: A light emitting apparatus includes at least one first light source and at least one second light source. The at least one first light source and at least one second light source may be configured to emit white light and cyan light, respectively, such that a ratio of luminous flux of the white light to luminous flux of the cyan light ranges from 19:1 to 370:1, based on a common magnitude of electrical current being applied to each of the at least one first light source and the at least one second light source.
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公开(公告)号：US10573628B2
公开(公告)日：2020-02-25
申请号：US15971196
申请日：2018-05-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yong Il Kim , Wan Tae Lim , Young Jin Choi , Sung Hyun Sim
Abstract: A light emitting device package includes a cell array including a plurality of semiconductor light emitting units, and having a first surface and a second surface opposite the first surface, each of the plurality of semiconductor light emitting units having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked on each other. The light emitting device package may further include a plurality of wavelength conversion units disposed on the first surface of the cell array to correspond to the plurality of semiconductor light emitting units, respectively, each configured to convert a wavelength of light, emitted by a respective one of the plurality of semiconductor light emitting units, into a different wavelength of light, and a partition structure disposed in a space between the plurality of wavelength conversion units, and a plurality of switching units spaced apart from the plurality of wavelength conversion units within the partition structure, and electrically connected to the plurality of semiconductor light emitting units.
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Patent Agency Ranking
公开(公告)号：US10475957B2
公开(公告)日：2019-11-12
申请号：US16190538
申请日：2018-11-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Goo Cha , Yong Il Kim , Young Soo Park , Sung Hyun Sim , Hanul Yoo
IPC: H01L33/08 , G09G3/20 , H01L33/38 , H01L33/50 , H01L33/58 , H01L25/075 , G09G3/32 , H01L33/46 , H01L33/62
Abstract: An LED light source module includes a light emitting stacked body, and a first through electrode structure and a second through electrode structure passing through a portion of the light emitting stacked body. The light emitting stacked body includes a base insulating layer, light emitting layers sequentially stacked on the base insulating layer, each of the light emitting layers including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an interlayer insulating layer disposed between the light emitting layers. The first through electrode structure is connected to the first conductivity-type semiconductor layer of each of the light emitting layers, and the second through electrode structure is connected to any one or any combination of the second conductivity-type semiconductor layer of each of the light emitting layers.
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公开(公告)号：US10217914B2
公开(公告)日：2019-02-26
申请号：US15163204
申请日：2016-05-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Goo Cha , Wan Tae Lim , Yong Il Kim , Hye Seok Noh , Eun Joo Shin , Sung Hyun Sim , Hanul Yoo
IPC: H01L29/49 , H01L33/58 , H01L33/50 , H01L33/44 , H01L33/00 , F21Y103/10 , F21Y115/10 , F21S8/02 , F21V23/00 , F21K9/275 , F21K9/237
Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively providing a first surface and a second surface, opposite to each other, of the light emitting structure, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a region of the first conductivity-type semiconductor layer being open toward the second surface, and the first surface having a concavo-convex portion disposed thereon; a first electrode and a second electrode disposed on the region of the first conductivity-type semiconductor layer and a region of the second conductivity-type semiconductor layer, respectively; a transparent support substrate disposed on the first surface of the light emitting structure; and a transparent adhesive layer disposed between the first surface of the light emitting structure and the transparent support substrate.
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公开(公告)号：US09825016B1
公开(公告)日：2017-11-21
申请号：US15386425
申请日：2016-12-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yong Il Kim , Wan Tae Lim , Young Jin Choi , Sung Hyun Sim
CPC classification number: H01L25/167 , H01L27/124 , H01L33/06 , H01L33/32 , H01L33/50 , H01L33/54
Abstract: A light emitting device package includes a cell array including a plurality of semiconductor light emitting units, and having a first surface and a second surface opposite the first surface, each of the plurality of semiconductor light emitting units having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked on each other. The light emitting device package may further include a plurality of wavelength conversion units disposed on the first surface of the cell array to correspond to the plurality of semiconductor light emitting units, respectively, each configured to convert a wavelength of light, emitted by a respective one of the plurality of semiconductor light emitting units, into a different wavelength of light, and a partition structure disposed in a space between the plurality of wavelength conversion units, and a plurality of switching units spaced apart from the plurality of wavelength conversion units within the partition structure, and electrically connected to the plurality of semiconductor light emitting units.
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公开(公告)号：US20170130909A1
公开(公告)日：2017-05-11
申请号：US15181935
申请日：2016-06-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Ji Hye YEON , Han Kyu Seong , Yong Il Kim , Jung Sub Kim
CPC classification number: H01L33/50 , F21K9/233 , F21V23/003 , F21W2131/103 , F21Y2105/10 , F21Y2113/00 , F21Y2113/13 , F21Y2115/10 , H01L25/0753 , H01L2224/16225 , H05B33/0857
Abstract: A light emitting apparatus includes at least one first light source and at least one second light source. The at least one first light source and at least one second light source may be configured to emit white light and cyan light, respectively, such that a ratio of luminous flux of the white light to luminous flux of the cyan light ranges from 19:1 to 370:1, based on a common magnitude of electrical current being applied to each of the at least one first light source and the at least one second light source.
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公开(公告)号：US09087932B2
公开(公告)日：2015-07-21
申请号：US13948797
申请日：2013-07-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Tae Hun Kim , Sung Joon Kim , Yong Il Kim , Yung Ho Ryu , Myeong Rak Son , Su Yeol Lee , Seung Hwan Lee , Tae Sung Jang , Su Min Hwangbo
CPC classification number: H01L33/007 , H01L33/0079
Abstract: A method for manufacturing a semiconductor light emitting device includes forming an isolation pattern on a semiconductor single crystal growth substrate. A first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer are sequentially grown in one chip unit region of the semiconductor single crystal growth substrate defined by the isolation pattern, and a reflective metal layer is formed to cover the light emitting structure and the isolation pattern. A support substrate is formed on the reflective metal layer, and the semiconductor single crystal growth substrate is removed from the light emitting structure. The support substrate is then cut into individual light emitting devices.
Abstract translation: 一种制造半导体发光器件的方法包括在半导体单晶生长衬底上形成隔离图案。 在由隔离图案限定的半导体单晶生长基板的一个芯片单元区域中依次生长第一导电型半导体层，有源层和第二导电型半导体层，并且形成反射金属层以覆盖 发光结构和隔离图案。 在反射金属层上形成支撑基板，从发光结构去除半导体单晶生长基板。 然后将支撑衬底切割成单个发光器件。
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