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    Pipeline-operating type memory system capable of reading data from a memory array having data width larger than the output data width
    31.
    发明授权
    Pipeline-operating type memory system capable of reading data from a memory array having data width larger than the output data width 失效
    能够从具有大于输出数据宽度的数据宽度的存储器阵列中读取数据的管道操作型存储器系统

    公开(公告)号：US5602782A

    公开(公告)日：1997-02-11

    申请号：US467276

    申请日：1995-06-06

    申请人： Noboru Akiyama ,  Yuji Yokoyama ,  Tatsuyuki Ohta ,  Kunihiko Suzuki ,  Yutaka Kobayashi

    发明人： Noboru Akiyama ,  Yuji Yokoyama ,  Tatsuyuki Ohta ,  Kunihiko Suzuki ,  Yutaka Kobayashi

    IPC分类号： G11C11/407 ,  G11C7/10 ,  G11C11/401 ,  G11C29/00 ,  G11C29/34 ,  G11C7/00

    CPC分类号： G11C7/1039

    摘要： A pipeline-operating type memory system is arranged to have a first input unit for receiving a selector address signal for selecting data, a second input unit for receiving at least an address strobe signal, an X address signal and a Y address signal for selecting data; a first unit for receiving the X address signal and the Y address signal, latching these signals utilizing a first clock signal, and continuously outputting at least either of the X and the Y address signals until these address signals are unlatched; and a second unit for latching a selector address data signal output from the first input unit utilizing the first clock signal, and continuously and selectively outputting at least either of the address signal until the signal is unlatched. The memory system operates to transfer data in a manner to suit the pipeline operating cycle at a normal operating mode and at a fast page mode.

    摘要翻译： 流水线操作型存储器系统被布置成具有用于接收用于选择数据的选择器地址信号的第一输入单元，用于至少接收地址选通信号的第二输入单元，用于选择数据的X地址信号和Y地址信号 ; 用于接收X地址信号和Y地址信号的第一单元，利用第一时钟信号锁存这些信号，并连续输出X和Y地址信号中的至少一个，直到这些地址信号被解锁为止; 以及第二单元，用于使用所述第一时钟信号来锁存从所述第一输入单元输出的选择器地址数据信号，并且连续且选择性地输出所述地址信号中的至少一个，直到所述信号被解锁为止。 存储器系统操作以在正常操作模式和快速页模式下以适合流水线操作周期的方式传送数据。

    Disk cartridge having slider supported shutter with compressable projections to secure the shutter-slider to the cartridge
    33.
    发明授权
    Disk cartridge having slider supported shutter with compressable projections to secure the shutter-slider to the cartridge 失效
    磁盘盒具有带可压缩突起的滑块支撑的快门，以将快门滑块固定到盒

    公开(公告)号：US5381293A

    公开(公告)日：1995-01-10

    申请号：US226752

    申请日：1994-04-12

    申请人： Noboru Akiyama ,  Katsumi Kameda

    发明人： Noboru Akiyama ,  Katsumi Kameda

    IPC分类号： G11B23/03

    CPC分类号： G11B23/0303 ,  G11B23/0307 ,  G11B23/0308 ,  G11B23/0316

    摘要： A disk cartridge comprises a case with an upper and a lower shell halves united together to accommodate a disk of 3.5 inches therein, a guide portion, a shutter, and a slider slid in the guide portion of the case for supporting the shutter. The shutter is moved by a drive pin to open and close a head and spindle holes. The slider enables the shutter to move smoothly along the guide portion and prevents the shutter from being disconnected from the guide portion when the case is dropped. The slider also having grooved projections thereon which allow the projections to compress and be inserted into guide portions of the case.

    摘要翻译： 磁盘盒包括壳体，其具有联合在一起以容纳其中3.5英寸的盘的上部和下部半部件，引导部分，快门和滑块，其滑动在壳体的用于支撑快门的引导部分中。 快门由驱动销移动以打开和关闭头部和主轴孔。 该滑块使得快门能够沿着引导部分平滑移动，并且防止当壳体掉落时快门与导向部分断开。 该滑块还在其上具有凹槽突起，允许突起压缩并插入壳体的引导部分。

    Vapor phase growth on semiconductor wafers
    34.
    发明授权
    Vapor phase growth on semiconductor wafers 失效
    半导体晶圆上的气相生长

    公开(公告)号：US4745088A

    公开(公告)日：1988-05-17

    申请号：US830713

    申请日：1986-02-19

    申请人： Yosuke Inoue ,  Takaya Suzuki ,  Masahiro Okamura ,  Noboru Akiyama ,  Masato Fujita ,  Hiroo Tochikubo ,  Shinya Iida

    发明人： Yosuke Inoue ,  Takaya Suzuki ,  Masahiro Okamura ,  Noboru Akiyama ,  Masato Fujita ,  Hiroo Tochikubo ,  Shinya Iida

    IPC分类号： H01L21/205 ,  C23C16/458 ,  C23C16/46 ,  H01L21/31 ,  C23C16/00

    CPC分类号： C23C16/46 ,  C23C16/4584 ,  Y10S148/057 ,  Y10S148/169 ,  Y10S438/935

    摘要： The vapor phase growth on semiconductor wafers is carried out by an apparatus in which a multiplicity of semiconductor wafers are held by a holder so that the semiconductor wafers lie one over another in a vertical direction, and are rotated together with the holder, the holder is placed in a heater disposed in a reaction vessel, a raw material gas supply nozzle and a raw material gas exhaust nozzle are provided within the heater so that the semiconductor wafers are interposed between the gas supply nozzle and the gas discharge nozzle, and the gas supply nozzle and the gas discharge nozzle have gas supply holes and gas discharge holes, respectively, so that a raw material gas can flow on each semiconductor wafer in horizontal directions. When the temperature of the heater is raised by a heating source to heat the semiconductor wafers, the raw material gas is supplied from the gas supply holes to each semiconductor wafer, and thus a uniform layer is grown on each semiconductor wafer from the raw material gas.

    摘要翻译： 半导体晶片上的气相生长由多个半导体晶片被保持器保持的装置进行，使得半导体晶片在垂直方向上一个接一个地并且与保持器一起旋转，保持器是 放置在设置在反应容器中的加热器中，原料气体供给喷嘴和原料气体排出喷嘴设置在加热器内，使得半导体晶片插入在气体供给喷嘴和气体排出喷嘴之间，气体供给 喷嘴和气体排出喷嘴分别具有气体供给孔和气体排出孔，使得原料气体可以在水平方向上在每个半导体晶片上流动。 当加热器的温度由加热源升高以加热半导体晶片时，原料气体从气体供给孔供给到每个半导体晶片，因此从原料气体在每个半导体晶片上生长均匀的层 。

    Power MISFET, semiconductor device and DC/DC converter
    35.
    发明授权
    Power MISFET, semiconductor device and DC/DC converter 有权
    电源MISFET，半导体器件和DC / DC转换器

    公开(公告)号：US08319289B2

    公开(公告)日：2012-11-27

    申请号：US12005918

    申请日：2007-12-27

    申请人： Masaki Shiraishi ,  Noboru Akiyama ,  Takayuki Hashimoto

    发明人： Masaki Shiraishi ,  Noboru Akiyama ,  Takayuki Hashimoto

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC分类号： H01L29/7816 ,  H01L21/823814 ,  H01L21/823878 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/456 ,  H01L29/665 ,  H01L29/66689

    摘要： A technique for suppressing lowering of withstand voltage and lowering of breakdown resistance and reducing a feedback capacitance of a power MISFET is provided. A lateral power MISFET that comprises a trench region whose insulating layer is formed shallower than an HV-Nwell layer is provided in the HV-Nwell layer (drift region) formed on a main surface of a semiconductor substrate in a direction from the main surface to the inside. The lateral power MISFET has an arrangement on a plane of the main surface including a source layer (source region) and a drain layer (drain region) arranged at opposite sides to each other across a gate electrode (first conducting layer), and a dummy gate electrode (second conducting layer) that is different from the gate electrode is arranged between the gate electrode and the drain layer.

    摘要翻译： 提供了用于抑制耐压降低和击穿电阻降低并降低功率MISFET的反馈电容的技术。 在半导体衬底的主表面上形成的HV-Nwell层（漂移区域）中，沿着从主表面到主体表面的方向，设置包括其绝缘层形成为比HV-Nwell层浅的沟槽区域的横向功率MISFET 里面。 横向功率MISFET具有在主表面的平面上的布置，包括在栅极电极（第一导电层）上彼此相对设置的源极层（源极区域）和漏极层（漏极区域） 与栅电极不同的栅电极（第二导电层）配置在栅电极和漏极层之间。

    Semiconductor device, LED driving circuit, and apparatus for displaying an image
    36.
    发明授权
    Semiconductor device, LED driving circuit, and apparatus for displaying an image 失效
    半导体装置，LED驱动电路以及显示图像的装置

    公开(公告)号：US08258711B2

    公开(公告)日：2012-09-04

    申请号：US12779343

    申请日：2010-05-13

    申请人： Noboru Akiyama ,  Takayuki Hashimoto ,  Takashi Hirao ,  Nobuyoshi Matsuura ,  Hideo Ishii

    发明人： Noboru Akiyama ,  Takayuki Hashimoto ,  Takashi Hirao ,  Nobuyoshi Matsuura ,  Hideo Ishii

    IPC分类号： H05B37/02

    CPC分类号： H01L29/7813 ,  G09G3/342 ,  G09G2320/064 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/41766 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7815 ,  H05B33/0818 ,  H05B33/0827 ,  H05B33/089 ,  Y02B20/347

    摘要： The semiconductor device is included in the LED driving circuit (current regulator) of driving the LED array (with series-connected number m×parallel-connected number n), and is formed of a plurality (n pieces) of LED driving devices of controlling a current (constant-current driving) flowing in each string. A vertical semiconductor device, for example, a vertical MOSFET is used as the LED driving device. Both of a main device functioning as a constant-current driving device and a subsidiary device functioning as a circuit-breaking switch during dimming are formed inside a chip of the device, which are formed of the vertical semiconductor devices. In a first surface of the device, each source region of the main device and the subsidiary device is formed so as to be insulated from each other through an isolation region.

    摘要翻译： 半导体器件包括在驱动LED阵列（串联数字×并联数n）的LED驱动电路（电流调节器）中，并且由多个（n个）LED驱动装置形成， 在每个串中流动的电流（恒流驱动）。 使用垂直半导体器件，例如垂直MOSFET作为LED驱动器件。 作为恒流驱动装置的主装置和在调光期间用作断路开关的辅助装置都形成在由垂直半导体装置形成的装置的芯片的内部。 在装置的第一表面中，主装置和附属装置的每个源区形成为通过隔离区彼此绝缘。

    Semiconductor device
    37.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US08203380B2

    公开(公告)日：2012-06-19

    申请号：US12483668

    申请日：2009-06-12

    申请人： Takayuki Hashimoto ,  Takashi Hirao ,  Noboru Akiyama

    发明人： Takayuki Hashimoto ,  Takashi Hirao ,  Noboru Akiyama

    IPC分类号： H01L25/00

    CPC分类号： H01L27/0629 ,  H01L2924/0002 ,  H02M7/003 ,  H01L2924/00

    摘要： In a semiconductor device, a high-side driver is arranged in a region closer to a periphery of a semiconductor substrate than a high-side switch, and a low-side driver is arranged in a region closer to the periphery of the semiconductor substrate than the low-side switch. By this means, a path from a positive terminal of an input capacitor to a negative terminal of the input capacitor via the high-side switch and the low-side switch is short, a path from a positive terminal of a drive capacitor to a negative terminal of the drive capacitor via the low-side driver is short, and a path from a positive terminal of a boot strap capacitor to a negative terminal of the boot strap capacitor via the high-side driver is short, and therefore, the parasitic inductance can be reduced, and the conversion efficiency can be improved.

    摘要翻译： 在半导体装置中，高侧驱动器配置在比高侧开关更靠近半导体基板的周围的区域，低边驱动器配置在比半导体基板的周边更靠近的区域， 低端开关。 通过这种方式，经由高侧开关和低侧开关从输入电容器的正极端子到输入电容器的负极端子的路径很短，从驱动电容器的正极端子到负极的路径 通过低侧驱动器的驱动电容器的端子短，通过高侧驱动器从引导电容器的正极端子到引导电容器的负极端子的路径短，因此，寄生电感 可以降低转换效率。