ELECTRODE, POWER STORAGE DEVICE, AND ELECTRONIC EQUIPMENT
    35.
    发明申请
    ELECTRODE, POWER STORAGE DEVICE, AND ELECTRONIC EQUIPMENT 审中-公开
    电极,蓄电装置和电子设备

    公开(公告)号:US20160204437A1

    公开(公告)日:2016-07-14

    申请号:US14988159

    申请日:2016-01-05

    CPC classification number: H01M4/62 H01M2/02 H01M4/13 H01M10/0431

    Abstract: A flexible power storage device or a power storage device of which the capacity and cycle characteristics do not easily deteriorate even when the power storage device is curved is provided. An electrode in which an active material layer, a current collector, and a friction layer are stacked in this order is provided. Furthermore, a power storage device that includes the electrode as at least one of a positive electrode and a negative electrode is provided.

    Abstract translation: 提供即使在蓄电装置弯曲时容量和循环特性也不容易劣化的柔性蓄电装置或蓄电装置。 提供其中依次层叠活性物质层,集电体和摩擦层的电极。 此外,提供了包括作为正极和负极中的至少一个的电极的蓄电装置。

    Method for manufacturing semiconductor device having antifuse with semiconductor and insulating films as intermediate layer
    36.
    发明授权
    Method for manufacturing semiconductor device having antifuse with semiconductor and insulating films as intermediate layer 有权
    制造具有半导体反熔丝的半导体器件和绝缘膜作为中间层的方法

    公开(公告)号:US09356030B2

    公开(公告)日:2016-05-31

    申请号:US14656322

    申请日:2015-03-12

    Abstract: An object is to provide an antifuse with little power consumption at the time of writing. The antifuse is used for a memory element in a read-only memory device. The antifuse includes a first conductive layer, a multilayer film of two or more layers in which an amorphous silicon film and an insulating film are alternately stacked over the first conductive layer, and a second conductive layer over the multilayer film. Voltage is applied between the first and second conductive layers and resistance of the multilayer film is decreased, whereby data is written to the memory element. When an insulating film having higher resistance than amorphous silicon is formed between the first and second conductive layers, current flowing through the antifuse at the time of writing is reduced.

    Abstract translation: 目的是提供一种在写入时功耗很小的反熔丝。 反熔丝用于只读存储器件中的存储元件。 反熔丝包括第一导电层,其中非晶硅膜和绝缘膜交替堆叠在第一导电层上的两层或更多层的多层膜,以及多层膜上的第二导电层。 电压施加在第一和第二导电层之间,并且多层膜的电阻降低,从而将数据写入存储元件。 当在第一和第二导电层之间形成具有比非晶硅更高的电阻的绝缘膜时,在写入时流过反熔丝的电流减小。

    ELECTRODE MATERIAL FOR POWER STORAGE DEVICE, ELECTRODE FOR POWER STORAGE DEVICE, AND POWER STORAGE DEVICE
    37.
    发明申请
    ELECTRODE MATERIAL FOR POWER STORAGE DEVICE, ELECTRODE FOR POWER STORAGE DEVICE, AND POWER STORAGE DEVICE 审中-公开
    蓄电装置用电极材料,蓄电装置用电极及蓄电装置

    公开(公告)号:US20140087251A1

    公开(公告)日:2014-03-27

    申请号:US14029853

    申请日:2013-09-18

    CPC classification number: H01M4/628 H01M4/366 H01M4/62 H01M10/052

    Abstract: Irreversible capacity which causes a decrease in the initial capacity of a power storage device is reduced and the electrochemical decomposition of an electrolytic solution is suppressed. The decomposition reaction of an electrolytic solution as a side reaction of a power storage device is reduced or suppressed to improve the cycle performance of the power storage device. An electrode material for a power storage device includes active material particles and coating films covering part of surfaces of the active material particles. Carrier ions used for the power storage device can pass through the coating film. The product of the electric resistivity and the thickness of the coating film at 25° C. is greater than or equal to 20 Ωm·m.

    Abstract translation: 导致蓄电装置的初始容量降低的不可逆容量降低,电解液的电化学分解受到抑制。 作为蓄电装置的副反应的电解液的分解反应减少或抑制,以提高蓄电装置的循环性能。 用于蓄电装置的电极材料包括活性材料颗粒和覆盖活性材料颗粒表面的一部分的涂膜。 用于蓄电装置的载体离子可以通过涂膜。 25℃时的电阻率和涂膜厚度的乘积大于等于20Ω·m·m。

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