公开(公告)号：US20030180457A1

公开(公告)日：2003-09-25

申请号：US10356722

申请日：2003-02-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masakazu Murakami ,  Hisashi Ohtani ,  Shunpei Yamazaki ,  Hideaki Kuwabara

IPC: B05D007/22 ,  C23C016/00

CPC classification number: C23C14/564 ,  C23C14/12 ,  C23C14/246 ,  C23C14/56 ,  H01L51/001 ,  H01L51/005 ,  H01L51/0059 ,  H01L51/0078 ,  H01L51/0081 ,  H01L51/0084 ,  H01L51/56

Abstract: A manufacturing system capable of enhancing reliability and luminance of a light emitting element is provided which uses an EL material of very high purity in evaporation. The system is also capable of using an EL material efficiently. Instead of a glass jar, a container (first container 11a) to be set in an evaporation apparatus is employed and a material maker (18) stores an EL material (12), or refines it by sublimation and stores, directly in the container. The container is then transferred to a light emitting device maker (19) for evaporation. With a manufacturing system as such, impurities are prevented from contaminating a highly pure EL material. This system also eliminates the trouble of transferring an EL material from a glass jar to a container. The container may be recovered by the material maker and the EL material remaining in the container may be collected for reuse by the manufacturing system.

Abstract translation: 提供一种能够提高发光元件的可靠性和亮度的制造系统，其使用蒸发中具有非常高纯度的EL材料。 该系统还能够有效地使用EL材料。 代替玻璃罐，使用要设置在蒸发装置中的容器（第一容器11a），并且制造商（18）存储EL材料（12），或通过升华进行精炼并直接存储在容器中。 然后将容器转移到发光装置制造商（19）以进行蒸发。 通过制造系统，防止杂质污染高纯度的EL材料。 该系统还消除了将EL材料从玻璃罐转移到容器的麻烦。 容器可以由材料制造商回收，并且可以收集留在容器中的EL材料以供制造系统重新使用。

公开(公告)号：US20030174106A1

公开(公告)日：2003-09-18

申请号：US10387063

申请日：2003-03-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshifumi Tanada ,  Mitsuaki Osame ,  Aya Anzai ,  Shunpei Yamazaki

IPC: G09G003/32

CPC classification number: G09G3/3266 ,  G09G3/2022 ,  G09G3/2033 ,  G09G3/3258 ,  G09G3/3275 ,  G09G2300/0426 ,  G09G2300/0452 ,  G09G2300/0847 ,  G09G2310/06 ,  G09G2310/061 ,  H01L27/3211 ,  H01L27/322 ,  H01L27/3244

Abstract: In a light emitting apparatus, all pixels are fabricated using monochrome light-emitting materials. Since the light transmittances of color filters or color conversion layers are not uniform among red (R), green (G), and blue (B), exact white color cannot be displayed. In the present invention, dots for producing these colors of light, i.e., red (R), green (G), and blue (B), are arranged parallel to writing scan lines and to erasing scan lines. The brightnesses are made uniform by controlling the emission times of the emitted colors of light. According to the brightnesses obtained after passage through the colored layer with the lowest light transmittance, the emission times of colors of light passed through the other colored layers are shortened. Thus, as the brightness differences after passage can be reduced, the light emitting apparatus can display exact white color.

Abstract translation: 在发光装置中，使用单色发光材料制造所有像素。 由于在红色（R），绿色（G）和蓝色（B）中滤色器或颜色转换层的透光率不均匀，所以不能显示精确的白色。 在本发明中，用于产生这些颜色的光，即红色（R），绿色（G）和蓝色（B））的点平行于写入扫描线布置并擦除扫描线。 通过控制发出的光的发射时间来使亮度均匀。 根据通过具有最低透光率的着色层获得的亮度，通过其它着色层的光的颜色的发射次数缩短。 因此，随着通过后的亮度差可以减小，发光装置可以显示准确的白色。

公开(公告)号：US20030170939A1

公开(公告)日：2003-09-11

申请号：US10401891

申请日：2003-03-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hongyong Zhang ,  Takashi Inushima ,  Takeshi Fukada

IPC: H01L021/00 ,  H01L021/84

CPC classification number: H01L29/66757 ,  C23C14/568 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02631 ,  H01L21/02661 ,  Y10S438/906 ,  Y10S438/907 ,  Y10S438/908

Abstract: A method of manufacturing thin film field effect transistors is described. The channel region of the transistors is formed by depositing an amorphous semiconductor film in a first sputtering apparatus followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The gate insulating film is formed by depositing an oxide film in a second sputtering apparatus connected to the first apparatus through a gate valve. The sputtering for the deposition of the amorphous semiconductor film is carried out in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film. On the other hand the gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen.

Abstract translation: 描述制造薄膜场效应晶体管的方法。 通过在第一溅射装置中沉积非晶半导体膜，然后进行热处理以将非晶相转化为多晶相来形成晶体管的沟道区。 栅极绝缘膜通过在通过闸阀连接到第一装置的第二溅射装置中沉积氧化膜而形成。 用于沉积非晶半导体膜的溅射在包括氢的气氛中进行，以便将氢引入到非晶半导体膜中。 另一方面，通过溅射在包含氧的气​​氛中沉积栅极绝缘氧化物膜。

公开(公告)号：US20030168661A1

公开(公告)日：2003-09-11

申请号：US10347350

申请日：2003-01-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama

IPC: H01L029/04 ,  H01L031/036

CPC classification number: H01L27/1214 ,  H01L27/1251 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L2029/7863

Abstract: Reliability of crystalline TFTs is improved in a large area integrated circuit typified by an active matrix type liquid crystal display device. In TFTs having an LDD structure, a region whose LDD region overlaps with a gate electrode and a region not overlapping with the gate electrode are fabricated inside one TFT. To accomplish this structure, n-channel TFTs are fabricated in non-self-alignment whereas p-channel TFTs are fabricated in self-alignment.

Abstract translation: 在以有源矩阵型液晶显示装置为代表的大面积集成电路中，晶体TFT的可靠性提高。 在具有LDD结构的TFT中，在一个TFT内部制造LDD区域与栅电极重叠的区域和与栅电极不重叠的区域。 为了实现这种结构，n沟道TFT以非自对准制造，而p沟道TFT以自对准制造。

公开(公告)号：US20030148594A1

公开(公告)日：2003-08-07

申请号：US10289219

申请日：2002-11-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Akihisa Shimomura ,  Mai Akiba

IPC: C30B001/00

CPC classification number: H01L21/02691 ,  B23K26/0732 ,  B23K26/0736 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/67282 ,  H01L21/67294 ,  H01L27/1285

Abstract: To provide a continuous-oscillating laser apparatus capable of improving the efficiency of substrate treatment, a method of irradiating a laser beam, and a method of manufacturing a semiconductor device using the laser apparatus. Of the entire semiconductor film, a portion that needs to be left on the substrate after patterning is identified according to a mask. Then, a portion to be scanned by respective lasers are defined, so that a laser beam is irradiated twice in different scanning directions to a portion to be obtained at least through patterning and beam spots are impinged upon the scanned portion, thereby partially crystallizing the semiconductor film. In other words, in the invention, it is arranged in such a manner that a laser beam is not irradiated by scanning a laser beam across the entire semiconductor film but by scanning a laser beam twice at least to the absolutely necessary portion. According to the above arrangement, it is possible to save the time to irradiate a laser beam in waste to the semiconductor film at a portion to be removed through patterning, and the crystalline characteristics of the semiconductor film obtained after the patterning can be further enhanced.

Abstract translation: 为了提供能够提高基板处理效率的连续振荡激光装置，照射激光的方法以及使用该激光装置制造半导体装置的方法。 在整个半导体膜中，根据掩模来识别在图案化之后需要留在基板上的部分。 然后，定义要由相应激光器扫描的部分，使得激光束在不同的扫描方向上被照射到要获得的部分两次，至少通过图案化并且光束点被照射在扫描部分上，从而部分地使半导体 电影。 换句话说，在本发明中，其布置成使得激光束不通过扫描整个半导体膜上的激光束而被照射，而是通过至少对绝对必需部分进行两次扫描激光束而被照射。 根据上述结构，通过图案化，可以节省在要除去的部分向半导体膜照射浪费的激光的时间，并且可以进一步提高在图案化之后获得的半导体膜的结晶特性。

公开(公告)号：US20030129791A1

公开(公告)日：2003-07-10

申请号：US10329405

申请日：2002-12-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki

IPC: H01L021/00

CPC classification number: H01L21/02675 ,  G02F1/13454 ,  H01L21/02672 ,  H01L21/2026 ,  H01L21/3003 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78645 ,  H01L2029/7863

Abstract: A semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. An LDD region 207 provided in an n-channel TFT 302 forming a driving circuit enhances the tolerance for hot carrier injection. LDD regions 217-220 provided in an n-channel TFT (pixel TFT) 304 forming a pixel portion greatly contribute to the decrease in the OFF current value. Here, the LDD region of the n-channel TFT of the driving circuit is formed such that the concentration of the n-type impurity element becomes higher as the distance from an adjoining drain region decreases.

Abstract translation: 提供了具有高操作性能和可靠性的半导体器件及其制造方法。 设置在形成驱动电路的n沟道TFT 302中的LDD区域207增强了热载流子注入的容限。 设置在形成像素部的n沟道TFT（像素TFT）304中的LDD区域217-220极大地有助于关断电流值的降低。 这里，驱动电路的n沟道TFT的LDD区域形成为随着与邻接的漏极区的距离减小，n型杂质元素的浓度变高。

公开(公告)号：US20030129790A1

公开(公告)日：2003-07-10

申请号：US10290478

申请日：2002-11-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Satoshi Murakami ,  Masayuki Sakakura ,  Toru Takayama

IPC: H01L021/00

CPC classification number: H01L27/3244 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3246 ,  H01L29/78621 ,  H01L29/78627 ,  H01L51/5234 ,  H01L51/5253 ,  H01L2251/5315 ,  H01L2251/566

Abstract: The purpose of the invention is to improve reliability of a light emitting apparatus comprising a TFT and organic light emitting elements. The light emitting apparatus according to the invention having a thin film transistor and a light emitting element, comprises; a first inorganic insulation layer on the lower surface of a semiconductor layer, a second inorganic insulation layer on the upper surface of agate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, a wiring layer extending on the third inorganic insulation layer, a second organic insulation layer overlapped with the end of the wiring layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the wiring layer, a cathode layer formed in contact with the wiring layer and having side end overlapped with the fourth inorganic insulation layer, and an organic compound layer formed in contact with the cathode layer and the fourth inorganic insulation layer and comprising light emitting material, and an anode layer formed in contact with the organic compound layer comprising the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.

Abstract translation: 本发明的目的是提高包括TFT和有机发光元件的发光装置的可靠性。 根据本发明的具有薄膜晶体管和发光元件的发光装置包括： 在半导体层的下表面上的第一无机绝缘层，玛瑙电极的上表面上的第二无机绝缘层，第二无机绝缘层上的第一有机绝缘层，第一有机绝缘层上的第三无机绝缘层 在第三无机绝缘层上延伸的布线层，与布线层的端部重叠并且具有35〜45度的倾斜角的第二有机绝缘层，形成在第三无机绝缘层的上表面和侧面的第四无机绝缘层 所述第二有机绝缘层在所述布线层上具有开口，形成为与所述布线层接触并且具有与所述第四无机绝缘层重叠的侧端的阴极层和与所述阴极层接触形成的有机化合物层和 第四无机绝缘层，并且包括发光材料，以及形成为与所述发光材料接触的阳极层 包含所述发光材料的有机化合物层，其中所述第三无机绝缘层和所述第四无机绝缘层由氮化硅或氮化铝形成。

公开(公告)号：US20030127648A1

公开(公告)日：2003-07-10

申请号：US10323772

申请日：2002-12-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Naoaki Yamaguchi ,  Setsuo Nakajima

IPC: H01L029/04 ,  H01L031/036 ,  H01L031/0376 ,  H01L031/20

CPC classification number: H01L27/12 ,  H01L27/124 ,  H01L27/1277 ,  H01L27/14609 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66765

Abstract: Disclosed is a technique of improving the heat resistance of the aluminum gate electrode in bottom-gate-type TFT of which the active layer is made of a crystalline silicon film. A pattern of a laminate of a titanium film 102 and an aluminum film 103 is formed on a glass substrate 101. The pattern is to give a gate electrode 100. Then, the titanium film 102 is side-etched. Next, the layered substrate is heated to thereby intentionally form hillocks and whiskers-on the surface of the aluminum pattern 103. Next, the aluminum pattern 103 acting as an anode is subjected to anodic oxidation to form an oxide film 105 thereon. The anodic oxidation extends to the lower edge of the aluminum pattern 103, at which the titanium layer was side-etched. Next, a gate-insulating film 106 and an amorphous silicon film are formed. A mask is formed over the pattern, which is to give the gate electrode, and then a nickel acetate solution is applied to the layered structure. Thus, nickel is kept in contact with the surface of the structure. Next, this is heated to induce crystal growth in the silicon film from the region contacted with nickel to the masked region. In the bottom-gate-type TFT thus produced, the active layer is made of a crystalline silicon film. In this process, since the anodic oxide film is formed as in FIG. 1(C), aluminum does neither melt to flow away nor diffuse away. Thus, the heat resistance of the aluminum electrode formed is improved.

Abstract translation: 公开了一种提高活性层由结晶硅膜制成的底栅型TFT中的铝栅电极的耐热性的技术。 在玻璃基板101上形成钛膜102和铝膜103的叠层图案。图案是给予栅电极100.然后，对钛膜102进行侧蚀刻。 接着，在铝图案103的表面上，层叠基板被加热，从而有意地形成小丘和晶须。接着，将作为阳极的铝图案103进行阳极氧化，在其上形成氧化膜105。 阳极氧化延伸到铝图案103的下边缘，钛层被侧蚀刻。 接下来，形成栅极绝缘膜106和非晶硅膜。 在图案上形成掩模，得到栅电极，然后将乙酸镍溶液施加到层状结构。 因此，镍与结构的表面保持接触。 接下来，将其加热以在与镍接触的区域中的硅膜中引起晶体生长至掩蔽区域。 在如此制造的底栅型TFT中，有源层由结晶硅膜制成。 在该方法中，由于阳极氧化膜如图1所示那样形成。 如图1（C）所示，铝既不熔化也不会流失，也不会扩散。 因此，形成的铝电极的耐热性得到改善。

公开(公告)号：US20030122301A1

公开(公告)日：2003-07-03

申请号：US10320380

申请日：2002-12-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Akiharu Miyanaga ,  Toshiji Hamatani

IPC: A63B007/00

CPC classification number: A63F7/022 ,  A63F9/0468 ,  A63F2250/26

Abstract: A game machine enabled to make various responses by adding the psychosomatic state and emotion of the player as one of conditions for determining the responding manner. The psychosomatic state of the player is grasped to change the responses in accordance with the psychological state of the player by making use of both a chaos attractor obtained by numerically processing the information sampled from the player and the index indicating the degree how the chaos attractor matches the defining condition of the chaos.

公开(公告)号：US20030100150A1

公开(公告)日：2003-05-29

申请号：US10260698

申请日：2002-09-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidehito Kitakado ,  Masahiko Hayakawa ,  Shunpei Yamazaki ,  Taketomi Asami

IPC: H01L021/00 ,  H01L021/84 ,  H01L029/76

CPC classification number: H01L29/78603 ,  H01L27/12 ,  H01L27/1248 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627

Abstract: Channel doping is an effective method for controlling Vth, but if Vth shifts to the order of null4 to null3 V when forming circuits such as a CMOS circuit formed from both an n-channel TFT and a P-channel TFT on the same substrate, then it is difficult to control the Vth of both TFTs with one channel dope. In order to solve the above problem, the present invention forms a blocking layer on the back channel side, which is a laminate of a silicon oxynitride film (A) manufactured from SiH4, NH3, and N2O, and a silicon oxynitride film (B) manufactured from SiH4 and N2O. By making this silicon oxynitride film laminate structure, contamination by alkaline metallic elements from the substrate can be prevented, and influence by stresses, caused by internal stress, imparted to the TFT can be relieved.

Abstract translation: 通道掺杂是用于控制Vth的有效方法，但是当形成诸如在同一衬底上的n沟道TFT和P沟道TFT两者形成的CMOS电路的电路时，Vth偏移到-4至-3V的量级 ，则难以用一个通道掺杂来控制两个TFT的Vth。 为了解决上述问题，本发明在由SiH 4，NH 3和N 2 O制造的氮氧化硅膜（A）和氮氧化硅膜（B）之间的背面通道侧形成阻挡层， 由SiH4和N2O制成。 通过制造这种氮氧化硅膜层压结构，可以防止碱性金属元素从衬底的污染，并且可以减轻施加于TFT的由内部应力引起的应力的影响。