公开(公告)号：US20090199967A1

公开(公告)日：2009-08-13

申请号：US12365385

申请日：2009-02-04

申请人： Shinji Himori ,  Yasuharu Sasaki ,  Masakazu Higuma

发明人： Shinji Himori ,  Yasuharu Sasaki ,  Masakazu Higuma

IPC分类号： C23F1/08

CPC分类号： H01L21/6833 ,  H01J37/20 ,  H01J37/32091 ,  H01J2237/0209 ,  H02N13/00

摘要： A mounting stage for a plasma processing apparatus that can prevent degradation of an insulating film in a semiconductor device on a substrate. A conductor member is connected to a radio-frequency power source for producing plasma. A dielectric layer is buried in a central portion of an upper surface of the conductor member. An electrostatic chuck is mounted on the dielectric layer. The electrostatic chuck has an electrode film that satisfies the following condition: δ/z≧85 where δ=(ρv/(μπf))1/2 where z is the thickness of the electrode film, δ is the skin depth of the electrode film with respect to radio-frequency electrical power supplied from the radio-frequency power source, f is the frequency of the radio-frequency electrical power, π is the ratio of a circumference of a circle to its diameter, μ is the magnetic permeability of the electrode film, and ρv is the specific resistance of the electrode film.

摘要翻译： 一种等离子体处理装置的安装平台，其能够防止基板上的半导体装置中的绝缘膜的劣化。 导体构件连接到用于产生等离子体的射频电源。 电介质层埋在导体部件的上表面的中心部分。 静电卡盘安装在电介质层上。 静电吸盘具有满足以下条件的电极膜：<？in-line-formula description =“In-line formula”end =“lead”？> delta / z> = 85 <？in-line-formula description = “直线公式”end =“tail”？>其中delta =（rhov /（mupif））1/2其中z是电极膜的厚度，delta是电极膜相对于放射线的厚度， f是射频电力的频率，pi是圆周长与其直径的比率，μ是电极膜的导磁率，rhov 是电极膜的电阻率。

公开(公告)号：US06733624B2

公开(公告)日：2004-05-11

申请号：US10345294

申请日：2003-01-16

申请人： Akira Koshiishi ,  Shinji Himori

发明人： Akira Koshiishi ,  Shinji Himori

IPC分类号： H01L21302

CPC分类号： H01L21/6835 ,  C23C16/4585 ,  H01L21/6831 ,  H01L21/6833 ,  H01L24/90 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082

摘要： An apparatus for holding an object to be processed, according to this invention is mounted in a plasma processing apparatus and includes a convex-shaped holder main body, first dielectric film, and second dielectric film. The holder main body has a holding portion which holds an object to be processed placed on it and a flange formed on the peripheral portion of the holding portion to fit with a focus ring. The first dielectric film attracts the object to be processed placed on the holding portion to the holder main body by a Coulomb force. The second dielectric film attracts the focus ring fitted on the flange to the holder main body by an attracting force larger than that of the first dielectric film using a Johnson-Rahbek force. The electrostatic attracting force of the focus ring for the holder main body is increased, so that the cooling effect is increased. A change in plasma processing characteristics over time in the vicinity of the focus ring can be eliminated, and the entire surface of the object to be processed can be processed uniformly.

摘要翻译： 根据本发明的用于保持待处理物体的装置安装在等离子体处理装置中，并且包括凸形保持器主体，第一电介质膜和第二电介质膜。 保持器主体具有保持放置在其上的待加工物体的保持部分和形成在保持部分的周边部分上以与聚焦环配合的凸缘。 第一电介质膜通过库仑力吸引放置在保持部上的待处理物体到保持器主体。 使用Johnson-Rahbek力，第二电介质膜通过大于第一电介质膜的吸引力将安装在凸缘上的聚焦环吸引到保持器主体。 用于保持器主体的聚焦环的静电吸引力增加，从而增加了冷却效果。 可以消除焦点环附近的等离子体处理特性随时间的变化，并且可以均匀地处理被处理物体的整个表面。

公开(公告)号：US09275836B2

公开(公告)日：2016-03-01

申请号：US12848342

申请日：2010-08-02

申请人： Shinji Himori

发明人： Shinji Himori

IPC分类号： H01J37/32

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32715

摘要： A plasma processing apparatus includes: a processing chamber that accommodates a substrate therein; a lower electrode positioned within the processing chamber and serving as a mounting table; an upper electrode positioned to face the lower electrode within the processing chamber; a first high frequency power supply that applies high frequency power for plasma generation of a first frequency to the lower electrode or the upper electrode; a second high frequency power supply that applies high frequency power for ion attraction of a second frequency lower than the first frequency to the lower electrode; at least one bias distribution control electrode positioned at least in a peripheral portion above the lower electrode; and at least one bias distribution control power supply that applies an AC voltage or a square wave voltage of a third frequency lower than the second frequency to the at least one bias distribution control electrode.

摘要翻译： 一种等离子体处理装置，包括：处理室，其容纳基板; 位于处理室内的下电极，用作安装台; 位于处理室内面向下电极的上电极; 第一高频电源，其将用于等离子体产生第一频率的高频功率施加到下电极或上电极; 第二高频电源，其将高频功率施加到低于第一频率的第二频率的离子吸引到下电极; 至少一个偏置分布控制电极，至少位于下电极上方的周边部分中; 以及至少一个偏压分配控制电源，其向所述至少一个偏压分配控制电极施加低于所述第二频率的第三频率的AC电压或方波电压。

公开(公告)号：US08293068B2

公开(公告)日：2012-10-23

申请号：US12410943

申请日：2009-03-25

申请人： Chishio Koshimizu ,  Shinji Himori

发明人： Chishio Koshimizu ,  Shinji Himori

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32541 ,  H01J37/32091 ,  H01J37/32568 ,  H01J37/32577

摘要： A plasma processing apparatus includes: a vacuum-evacuable processing chamber; a lower central electrode; a lower peripheral electrode surrounding the lower central electrode in an annular shape; an upper electrode provided to face the lower central electrode and the lower peripheral electrode; a processing gas supply unit for supplying a processing gas into the processing chamber; an RF power supply for outputting an RF power for generating a plasma; and a power feed conductor connected to a rear surface of the lower peripheral electrode to supply the RF power to the lower peripheral electrode. The apparatus further includes a variable capacitance coupling unit for electrically connecting the lower central electrode with at least one of the power feed conductor and the lower peripheral electrode by capacitance coupling with a variable impedance in order to supply a part of the RF power from the RF power supply to the lower central electrode.

摘要翻译： 一种等离子体处理装置，包括：真空排空处理室; 下部中心电极; 围绕下部中心电极的下部周边电极为环状; 设置成面向下中央电极和下周边电极的上电极; 处理气体供应单元，用于将处理气体供应到处理室中; RF电源，用于输出用于产生等离子体的RF功率; 以及连接到下周边电极的后表面的供电导体，以向下周边电极提供RF功率。 该装置还包括可变电容耦合单元，用于通过与可变阻抗的电容耦合来将下部中心电极与馈电导体和下部外围电极中的至少一个电连接，以便从RF提供RF功率的一部分 向下中央电极供电。

公开(公告)号：US20110048643A1

公开(公告)日：2011-03-03

申请号：US12941701

申请日：2010-11-08

申请人： Shosuke Endoh ,  Shinji Himori

发明人： Shosuke Endoh ,  Shinji Himori

IPC分类号： H01L21/3065

CPC分类号： H01L21/67069 ,  H01J37/32642 ,  Y10T279/23

摘要： A plasma processing apparatus and a focus ring enables to perform uniform plasma processing over the entire surface of a substrate to be processed to thereby improve in-surface uniformity of plasma processing compared with conventional cases. The focus ring is disposed on a susceptor 2, which serves to mount thereon a semiconductor wafer W and further functions as a lower electrode, to surround a periphery of the semiconductor wafer W. The focus ring 6 includes a ring member of a thin plate shape disposed to surround the periphery of the wafer W while maintaining a gap therebetween and a lower ring body installed below the semiconductor wafer and the ring member of the thin plate shape.

摘要翻译： 等离子体处理装置和聚焦环能够在待处理的基板的整个表面上进行均匀的等离子体处理，从而提高等离子体处理的表面均匀性，与常规情况相比。 聚焦环设置在基座2上，该基座2用于在其上安装半导体晶片W，并且还用作下部电极，以围绕半导体晶片W的周围。聚焦环6包括薄板形状的环形构件 设置成围绕晶片W的周边保持间隙，并且安装在半导体晶片下方的下环体和薄板形状的环构件。

公开(公告)号：US20100243607A1

公开(公告)日：2010-09-30

申请号：US12750015

申请日：2010-03-30

申请人： Takeshi Ohse ,  Shinji Himori ,  Jun Abe ,  Norikazu Yamada

发明人： Takeshi Ohse ,  Shinji Himori ,  Jun Abe ,  Norikazu Yamada

IPC分类号： C23F1/08 ,  C23F1/00

CPC分类号： H01J37/02 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

摘要： A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.

摘要翻译： 基板处理方法使用基板处理装置，其包括用于容纳基板的室，用于安装基板的下电极，用于将用于等离子体产生的RF功率施加到室中的第一RF功率施加单元和第二RF功率施加单元 用于向下电极施加用于偏压的RF功率。 通过在预定的定时改变第一RF功率施加单元的输出来控制等离子体产生的RF功率间歇地改变。 如果通过第一RF功率施加单元的控制在腔室中不存在等离子体状态或余辉状态，则第二RF功率施加单元的输出被控制为处于OFF状态或降低到低于第二RF功率的输出 当第一RF功率施加单元的输出为设定输出时，施加单元。

公开(公告)号：US20090221151A1

公开(公告)日：2009-09-03

申请号：US12379052

申请日：2009-02-11

申请人： Masanobu Honda ,  Shinji Himori

发明人： Masanobu Honda ,  Shinji Himori

IPC分类号： H01L21/465 ,  C23F1/08

CPC分类号： H01J37/32009 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541

摘要： The present invention provides an upper electrode used in an etching apparatus and the etching apparatus including the upper electrode, both of which can properly reduce intensity of electric field of plasma around a central portion of a substrate to be processed, thus enhancing in-plane uniformity of a plasma process. In this apparatus, a recess, serving as a space for allowing a dielectric to be injected therein, is provided around a central portion of the upper electrode. A dielectric supply passage configured for supplying the dielectric into the space and a dielectric discharge passage configured for discharging the dielectric from the space are connected with the space, respectively. With such configuration, the dielectric can be controllably supplied into the recess, such that in-plane distribution of the intensity of the electric field can be uniformed, corresponding to in-plane distribution of the intensity of the electric field of the plasma generated under various process conditions, such as a kind of each wafer that will be etched, each processing gas that will be used, and the like.

摘要翻译： 本发明提供了一种用于蚀刻装置的上电极和包括上电极的蚀刻装置，两者都可以适当地降低待加工基板的中心部分附近的等离子体的电场强度，从而提高面内均匀性 的等离子体工艺。 在该装置中，在上部电极的中心部分的周围设置用作容纳电介质的空间的凹部。 电介质供给通路被配置为将电介质供应到空间中，并且介质排出通道被配置为用于从空间排出电介质。 通过这样的结构，电介质可以可控地供给到凹部中，使得电场强度的面内分布可以均匀化，对应于各种不同的等离子体产生的等离子体的电场强度的面内分布 工艺条件，例如将被蚀刻的每种晶片的种类，将被使用的每种处理气体等。

公开(公告)号：US07112926B2

公开(公告)日：2006-09-26

申请号：US10120526

申请日：2002-04-12

申请人： Shinji Himori ,  Mitsuhiro Yuasa ,  Kazuyoshi Watanabe ,  Jun'ichi Shimada

发明人： Shinji Himori ,  Mitsuhiro Yuasa ,  Kazuyoshi Watanabe ,  Jun'ichi Shimada

IPC分类号： H05H1/24

CPC分类号： H01J37/32174 ,  H01J37/32082 ,  H01J37/32183 ,  H05H1/46

摘要： There are provided a matching unit capable of sufficiently matching the impedance of a high frequency load to a transmission path impedance without increasing its size and matching time even if a high frequency power of 70 MHz or higher is supplied thereto, and a plasma processing system using the same. A matching unit 41 comprises: a resonance rod 61 for transmitting a high frequency energy from a high frequency power supply 40 to a plasma producing electrode; a variable capacitor 62, connected to the resonance rod 61 and an electrode 21 in series, for adjusting the imaginary part of an impedance complex number; a housing 63 which is provided outside of the resonance rod 61 and which is grounded; a link coil 64 for exciting a high frequency energy to the resonance rod 61 and for adjusting the real part of the impedance complex number; and a controller 69 for controlling a driving part for the variable capacitor 62 and the link coil 64 so that a series resonance circuit is formed between the high frequency power supply 40 and the ground via plasma in a matching state.

摘要翻译： 提供了一种能够将高频负载的阻抗充分地匹配到传输路径阻抗而不增加其尺寸和匹配时间的匹配单元，即使提供70MHz或更高的高频功率，以及使用等离子体处理系统 一样。 匹配单元41包括：用于将高频能量从高频电源40传输到等离子体产生电极的共振杆61; 连接到共振杆61的可变电容器62和串联的电极21，用于调节阻抗复数的虚部; 壳体63，其设置在共振杆61的外部并接地; 用于激励共振杆61的高频能量并用于调整阻抗复数的实部的链路线圈64; 以及用于控制可变电容器62和链接线圈64的驱动部分的控制器69，使得在匹配状态下通过等离子体在高频电源40和接地之间形成串联谐振电路。

公开(公告)号：US20100072172A1

公开(公告)日：2010-03-25

申请号：US12562137

申请日：2009-09-18

申请人： Akio Ui ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

发明人： Akio Ui ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

IPC分类号： H01L21/3065 ,  C23F1/02

CPC分类号： H01L21/67069 ,  H01J37/32009 ,  H01J37/32027 ,  H01J37/32045 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32137 ,  H01J37/32532 ,  H01J2237/3341 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67253 ,  H01L22/14 ,  H01L22/26

摘要： There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.

摘要翻译： 提供了一种基板处理装置和基板处理方法，其实现有效地降低电极上的基板的电压变化，以减少进入基板的离子的入射能量的变化。 基板处理装置包括：第一电极，其在第一电极的主表面上保持基板; 面对所述第一电极的第二电极; RF电源，其向所述第一电极施加频率等于或高于40MHz的RF电压; 以及脉冲电压施加单元，通过将所述脉冲电压叠加在所述RF电压上，向所述第一电极施加按照经过的时间降低的脉冲电压。

公开(公告)号：US10147633B2

公开(公告)日：2018-12-04

申请号：US13611327

申请日：2012-09-12

申请人： Shinji Himori ,  Takehiro Kato ,  Etsuji Ito

发明人： Shinji Himori ,  Takehiro Kato ,  Etsuji Ito

IPC分类号： B65G43/00 ,  B65G47/90 ,  H01L21/677 ,  H01L21/687

摘要： A transfer apparatus transfers an object to be transferred onto a case. The transfer apparatus includes a transfer arm, an arm shaft, a plurality of electromagnets, and a control unit. The transfer arm has a pick unit on a front end thereof and extends and retracts in a horizontal direction. The object to be transferred is held on the pick unit. The arm shaft supports the transfer arm. The plurality of electromagnets apply an force in upward direction to the transfer arm by generating a magnetic field in the case. The control unit controls the plurality of electromagnets in such a manner that when the transfer arm extends and retracts in the horizontal direction, the force in upward direction applied to the transfer arm increases as a length from the arm shaft to the front end of the transfer arm increases.