Abstract:
A method for producing a semiconductor component is disclosed. A carrier substrate includes a mounting region and an opening, which is formed in the mounting region of the carrier substrate. After mounting a semiconductor chip, an electrically insulating layer is applied to the carrier substrate in such a way that the electrically insulating layer completely fills the first opening in the carrier substrate. A second opening is formed in the electrically insulating layer. An electrically conductive layer is then applied to the electrically insulating layer in such a way that the second opening is filled with the electrically conductive layer in the form of a via. A semiconductor component produced in this way is also provided.
Abstract:
A carrier (1) for an optoelectronic structure (2) is specified, wherein in places an electrically insulating passivation material (16) is arranged between an electrically conductive layer (14) of the carrier (1) and a carrier-side connecting means layer (15). Furthermore, an optoelectronic semiconductor chip comprising such a carrier and an optoelectronic structure (2) is specified, said structure being electrically conductively and mechanically connected to the carrier (1) by means of the carrier-side connecting means layer (15).
Abstract:
A multicolour LED, in which layers for generating light of different colors are arranged one above the other, is used as the light source in a projector.
Abstract:
A method of producing an optoelectronic semiconductor component includes arranging a semiconductor layer stack with a pn-junction on a substrate, lateral patterning of the semiconductor layer sack into a plurality of pairs of first semiconductor bodies and second semiconductor bodies spaced from one another in a lateral direction, detaching the substrate from the pairs of first semiconductor bodies and second semiconductor bodies, applying at least one pair of first semiconductor bodies and second semiconductor bodies to a connection carrier including electrical connection points and/or at least one conductor track, and electrically connecting the semiconductor bodies of a pair of first semiconductor bodies and second semiconductor bodies by the connection points and/or the at least one conductor track such that the pn-junction of the first semiconductor body connects in antiparallel to the pn-junction of the second semiconductor body.
Abstract:
An optoelectronic module includes a layer structure having a plurality of semiconductor layers including a substrate layer, a first layer arrangement and a second layer arrangement, wherein 1) the first layer arrangement has a light-emitting layer arranged on the substrate layer, 2) the second layer arrangement contains at least one circuit that controls an operating state of the light-emitting layer, and 3) the second layer arrangement is arranged on the substrate layer and/or surrounded by the substrate layer.
Abstract:
A method for producing a multiplicity of optoelectronic components includes providing a semiconductor body carrier including on a first main area a multiplicity of semiconductor bodies, each provided with a contact structure and having an active layer that generates electromagnetic radiation, in a semiconductor layer sequence, and forming a planar filling structure on the first main area such that the planar filling structure at least partly covers regions of the contact structure and the semiconductor body carrier without covering the semiconductor body.
Abstract:
A luminous means includes a first group of semiconductor chips and a second group of semiconductor chips, each group includes at least one semiconductor chip, wherein the first and second groups of semiconductor chips are arranged laterally alongside one another at least in part with respect to a main emission direction of the luminous means, and a third group of semiconductor chips which includes at least one semiconductor chip and is disposed downstream of the first and the second group with respect to the main emission direction, wherein each group of semiconductor chips emits electromagnetic radiation in wavelength ranges that differ from one another in pairs, radiation emitted by the third group of semiconductor chips has the shortest-wave wavelength range, radiation emitted by the first and second group of semiconductor chips at least partly passes into the at least one semiconductor chip of the third group, and mixed radiation is emitted by an emission area of the luminous means.
Abstract:
A semiconductor component comprising at least one optically active first region (112) for emitting electromagnetic radiation (130) in at least one emission direction and at least one optically active second region (122) for emitting electromagnetic radiation (130) in the at least one emission direction. The first region (112) is here arranged in a first layer (110) and the second region (122) in a second layer (120), the second layer (120) being arranged over the first layer (110) in the emission direction and comprising a first passage region (124) assigned to the first region (112), which first passage region is at least partially transmissive for the electromagnetic radiation (130) of the first region (112).
Abstract:
A method for producing a multiplicity of optoelectronic components includes providing a semiconductor body carrier including on a first main area a multiplicity of semiconductor bodies, each provided with a contact structure and having an active layer that generates electromagnetic radiation, in a semiconductor layer sequence, and forming a planar filling structure on the first main area such that the planar filling structure at least partly covers regions of the contact structure and the semiconductor body carrier without covering the semiconductor body.
Abstract:
A multicolour LED, in which layers for generating light of different colours are arranged one above the other, is used as the light source in a projector.