公开(公告)号：US08328939B2

公开(公告)日：2012-12-11

申请号：US11780478

申请日：2007-07-20

申请人： Soo Young Choi ,  John M. White

发明人： Soo Young Choi ,  John M. White

IPC分类号： C23C16/00 ,  C23C16/455 ,  C23C16/50 ,  C23C16/507 ,  H01L21/3065

CPC分类号： C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32596

摘要： The present invention generally comprises a diffuser plate for a PECVD chamber. The diffuser plate comprises a plurality of hollow cathode cavities. The edge of the diffuser plate that will reside closest to a slit valve within a processing chamber may have the shape and/or size of the hollow cathode cavities adjusted to compensate for the proximity to the slit valve. By adjusting the shape and/or size of the hollow cathode cavities closest to the slit valve, the diffuser plate may permit a uniform plasma distribution across the processing chamber and thus, a uniform film thickness upon a substrate during a PECVD process.

摘要翻译： 本发明通常包括用于PECVD室的扩散板。 扩散板包括多个空心阴极腔。 最靠近处理室内的狭缝阀的扩散器板的边缘可以具有被调整以补偿与狭缝阀接近的空心阴极腔的形状和/或尺寸。 通过调节最接近狭缝阀的中空阴极腔的形状和/或尺寸，扩散板可以允许跨过处理室的均匀的等离子体分布，从而在PECVD工艺期间在衬底上具有均匀的膜厚度。

公开(公告)号：US08174400B2

公开(公告)日：2012-05-08

申请号：US13042408

申请日：2011-03-07

申请人： Beom Soo Park ,  Soo Young Choi ,  John M. White ,  Hong Soon Kim ,  James Hoffman

发明人： Beom Soo Park ,  Soo Young Choi ,  John M. White ,  Hong Soon Kim ,  James Hoffman

IPC分类号： G08B21/00

CPC分类号： H01J37/32174 ,  H01J37/32935 ,  H03H7/40

摘要： Abnormal conditions within an RF-powered plasma process chamber are detected by detecting whether the frequency of a variable-frequency RF power supply moves outside established lower and upper limits. In a first aspect, a first pair of lower and upper limits are established as a function of the frequency of the power supply sampled after a new process step begins or after a sample control signal changes state. In a second aspect, a second pair of lower and upper limits are not adapted to the frequency of the power supply. Both aspects preferably are used together to detect different occurrences of abnormal conditions.

摘要翻译： 通过检测可变频率RF电源的频率是否移动到建立的下限和上限之外，来检测RF供电的等离子体处理室内的异常情况。 在第一方面，根据在新处理步骤开始之后或在采样控制信号改变状态之后采样的电源的频率，建立第一对下限和上限。 在第二方面，第二对下限和上限不适合电源的频率。 两个方面优选一起用于检测异常状况的不同出现。

公开(公告)号：US20120103264A1

公开(公告)日：2012-05-03

申请号：US13349332

申请日：2012-01-12

申请人： SOO YOUNG CHOI ,  Tae Kyung Won ,  John M. White

发明人： SOO YOUNG CHOI ,  Tae Kyung Won ,  John M. White

IPC分类号： C23C16/455

CPC分类号： C23C16/24 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32449

摘要： Methods and apparatus having a flow gradient created from a gas distribution plate are provided. In one embodiment, the method and apparatus are particularly useful for, but not limited to, depositing a silicon film for solar cell applications. The apparatus for depositing a uniform film for solar cell applications includes a processing chamber, and a quadrilateral gas distribution plate disposed in the processing chamber and having at least four corners separated by four sides. The gas distribution plate further includes a first plurality of chokes formed through the gas distribution plate, the first plurality of chokes located in the corners, and a second plurality of chokes formed through the gas distribution plate, the second plurality of chokes located along the sides of the gas distribution plate between the corner regions, wherein the first plurality of chokes have a greater flow resistance than that of the second plurality of chokes.

摘要翻译： 提供了具有由气体分配板产生的流动梯度的方法和装置。 在一个实施例中，该方法和装置特别适用于但不限于沉积太阳能电池应用的硅膜。 用于沉积用于太阳能电池应用的均匀膜的设备包括处理室和设置在处理室中的四边形气体分配板，并且具有由四个侧面分开的至少四个角。 气体分配板还包括通过气体分配板形成的第一多个扼流圈，位于角部的第一多个扼流圈，以及通过气体分配板形成的第二多个扼流圈，沿着侧面设置的第二多个扼流圈 在所述角区域之间的所述气体分配板中，所述第一多个扼流器具有比所述第二多个扼流圈更大的流动阻力。

公开(公告)号：US20110095402A1

公开(公告)日：2011-04-28

申请号：US12930230

申请日：2010-12-30

申请人： Beom Soo Park ,  Soo Young Choi ,  Tae Kyung Won ,  John M. White

发明人： Beom Soo Park ,  Soo Young Choi ,  Tae Kyung Won ,  John M. White

IPC分类号： H01L29/51

CPC分类号： E06C7/48 ,  E06C7/482 ,  E06C7/484

摘要： An α-SiNx:H gate dielectric film deposited over a substrate surface having a surface area larger than 100 cm×100 cm, wherein said α-SiNx:H gate dielectric film exhibits a film thickness which varies by less than about 20% over said surface area, a film density which varies by less than about 17% over said surface area, and wherein said film exhibits a Si—H bonded structure content of less than about 15 atomic % over said surface area.

摘要翻译： 一种沉积在表面积大于100cm×100cm的衬底表面上的α-SiNx：H栅极电介质膜，其中所述α-SiNx：H栅极电介质膜的膜厚比所述 表面积，比所述表面积变化小于约17％的膜密度，并且其中所述膜在所述表面积上表现出小于约15原子％的Si-H键合结构含量。

公开(公告)号：US20100245084A1

公开(公告)日：2010-09-30

申请号：US12661699

申请日：2010-03-19

申请人： Beom Soo Park ,  Hong Soon Kim ,  Soo Young Choi ,  James Hoffman ,  Suhail Anwar ,  John M. White

发明人： Beom Soo Park ,  Hong Soon Kim ,  Soo Young Choi ,  James Hoffman ,  Suhail Anwar ,  John M. White

IPC分类号： G08B21/00

CPC分类号： H01J37/32183 ,  H01J37/32935 ,  H01J37/3299

摘要： Malfunction of a component within an RF-powered plasma chamber is detected by observing an operating condition of the plasma chamber and detecting when the operating condition deviates from a previously observed range bounded by lower and upper limits. The lower and upper limits are determined by observing the minimum and maximum values of that operating condition during the processing of workpieces throughout one or more plasma chamber cleaning cycles immediately preceding the most recent cleaning of the plasma chamber.

摘要翻译： 通过观察等离子体室的操作状态并检测何时操作条件偏离由下限和上限限定的先前观察范围，来检测RF供电的等离子体室内部件的故障。 通过在紧邻等离子体室的最近清洁之前的一个或多个等离子体室清洁循环期间观察工件处理期间该操作条件的最小值和最大值来确定下限和上限。

公开(公告)号：US07785672B2

公开(公告)日：2010-08-31

申请号：US11021416

申请日：2004-12-22

申请人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Beom Soo Park

发明人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Beom Soo Park

IPC分类号： H05G1/24 ,  H05H1/02

CPC分类号： H01J37/32082 ,  C23C16/345 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/3244 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/31612

摘要： We have discovered methods of controlling a combination of PECVD deposition process parameters during deposition of thin films which provides improved control over surface standing wave effects which affect deposited film thickness uniformity and physical property uniformity. By minimizing surface standing wave effects, the uniformity of film properties across a substrate surface onto which the films have been deposited is improved. In addition, we have developed a gas diffusion plate design which assists in the control of plasma density to be symmetrical or asymmetrical over a substrate surface during film deposition, which also provides improved control over uniformity of deposited film thickness.

摘要翻译： 我们已经发现了在沉积薄膜期间控制PECVD沉积工艺参数的组合的方法，其提供了影响沉积膜厚度均匀性和物理性质均匀性的表面驻波效应的改进控制。 通过最小化表面驻波效应，改善了膜沉积在其上的衬底表面上的膜性质的均匀性。 此外，我们开发了一种气体扩散板设计，其有助于在膜沉积期间等离子体密度在衬底表面上对称或不对称，这也提供了对沉积膜厚度的均匀性的改进的控制。

公开(公告)号：US07589031B2

公开(公告)日：2009-09-15

申请号：US11607702

申请日：2006-12-01

申请人： Suhail Anwar ,  Chung-Hee Park ,  Beom Soo Park ,  Han Byoul Kim ,  Soo Young Choi ,  John M. White

发明人： Suhail Anwar ,  Chung-Hee Park ,  Beom Soo Park ,  Han Byoul Kim ,  Soo Young Choi ,  John M. White

IPC分类号： H01L21/31

CPC分类号： H01L21/02274 ,  C23C16/345 ,  H01L21/0217 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/3185 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/67236 ,  H01L29/66765 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of PECVD deposition of silicon-containing films has been discovered and further developed. The method is particularly useful when the films are deposited on substrates having surface areas which are larger than 25,000 cm2. The method prevents the deposition of partially reacted silicon-containing species which form a powdery material or haze (contaminant compound) on the substrate surface. The contaminant compounds are avoided by assuring that the power applied to form a plasma in the PECVD process is maintained, at least at a minimal level, until reactive silicon-containing precursor gases present above the surface of the substrate have been reacted or evacuated from the plasma processing area.

摘要翻译： 已经发现并进一步开发了含硅膜的PECVD沉积方法。 当膜沉积在具有大于25,000cm 2的表面积的基底上时，该方法是特别有用的。 该方法防止在基材表面上沉积形成粉末状物质或雾度（污染物化合物）的部分反应的含硅物质。 通过确保在PECVD工艺中施加以形成等离子体的功率至少保持最小水平，直到存在于衬底表面上方的反应性含硅前体气体已经从 等离子处理区。

公开(公告)号：US20090071406A1

公开(公告)日：2009-03-19

申请号：US11858020

申请日：2007-09-19

申请人： SOO YOUNG CHOI ,  Robin L. Tiner ,  John M. White

发明人： SOO YOUNG CHOI ,  Robin L. Tiner ,  John M. White

IPC分类号： C23C16/00

CPC分类号： C23C16/45572 ,  C03C17/002 ,  C03C17/02 ,  C03C17/245 ,  C03C2217/213 ,  C03C2218/153 ,  C23C16/4411 ,  C23C16/505

摘要： A plasma enhanced chemical vapor deposition chamber (PECVD) which includes a backing plate that provides support to a diffuser. The backing plate includes a plurality of fluid conduits adapted for circulation of a cooling fluid therethrough to remove excess heat generated in the chamber by the plasma to thereby maintain the backing plate in a stable condition thereby maintaining the diffuser in a stable position during the deposition of material from the plasma.

摘要翻译： 等离子体增强化学气相沉积室（PECVD），其包括提供对扩散器的支撑的背板。 背板包括适于使冷却流体循环通过其中的多个流体导管，以通过等离子体去除腔室中产生的多余热量，从而将背板保持在稳定状态，从而在沉积期间将扩散器保持在稳定的位置 来自等离子体的材料

公开(公告)号：US20090007846A1

公开(公告)日：2009-01-08

申请号：US12234359

申请日：2008-09-19

申请人： ERNST KELLER ,  John M. White ,  Robin L. Tiner ,  Jiri Kucera ,  Soo Young Choi ,  Beom Soo Park ,  Michael Starr

发明人： ERNST KELLER ,  John M. White ,  Robin L. Tiner ,  Jiri Kucera ,  Soo Young Choi ,  Beom Soo Park ,  Michael Starr

IPC分类号： C23C16/00

CPC分类号： H01J37/3244 ,  C23C16/45565

摘要： An apparatus and method for supporting a substantial center portion of a gas distribution plate is disclosed. At least one support member is capable of engaging and disengaging the diffuser with a mating connection without prohibiting flow of a gas or gases through the diffuser and is designed to provide vertical suspension to a diffuser that is supported at its perimeter, or capable of supporting the diffuser without a perimeter support. In one aspect, the at least one support member is a portion of a gas delivery conduit and in another embodiment is a plurality of support members separated from the gas delivery conduit. The at least one support member is capable of translating vertical lift, or vertical compression to a center area of the diffuser. A method and apparatus for controlling gas flow from the gas delivery conduit to the gas distribution plate is also disclosed.

摘要翻译： 公开了一种用于支撑气体分布板的大部分中心部分的装置和方法。 至少一个支撑构件能够通过配合连接件接合和分离扩散器，而不阻止气体或气体流过扩散器，并且被设计成向在其周边支撑的扩散器提供垂直悬架，或者能够支撑 扩散器没有周界支撑。 在一个方面，所述至少一个支撑构件是气体输送导管的一部分，并且在另一个实施例中是与气体输送导管分离的多个支撑构件。 至少一个支撑构件能够将垂直升降或垂直压缩平移到扩散器的中心区域。 还公开了一种用于控制从气体输送管道到气体分配板的气流的方法和装置。

公开(公告)号：US20080187682A1

公开(公告)日：2008-08-07

申请号：US11955575

申请日：2007-12-13

申请人： Beom Soo Park ,  Robin L. Tiner ,  Soo Young Choi ,  John M. White

发明人： Beom Soo Park ,  Robin L. Tiner ,  Soo Young Choi ,  John M. White

IPC分类号： C23C16/513 ,  C23C16/00

CPC分类号： C23C16/4401 ,  C23C16/5096 ,  H01J37/32623 ,  H01J37/32697

摘要： A method and apparatus for processing a substrate are provided. The chamber body comprises a chamber bottom and a sidewall having a slit valve. A substrate support comprising a support body is disposed in the chamber body. A first end of at least one wide RF ground strap is coupled with the support body and a second end of at least one RF ground strap is coupled with the chamber bottom. At least one extension bar is positioned along a peripheral edge of the support body. The method comprises providing a processing chamber having a slit valve and a substrate support, providing RF power to a distribution plate disposed over the substrate support, flowing gas through the distribution plate, plasma processing a substrate disposed on the substrate support, and reducing the generation of plasma adjacent to the slit valve.

摘要翻译： 提供了一种用于处理衬底的方法和设备。 腔室主体包括腔室底部和具有狭缝阀的侧壁。 包括支撑体的基板支撑件设置在室主体中。 至少一个宽RF接地带的第一端与支撑体耦合，并且至少一个RF接地带的第二端与腔室底部联接。 至少一个延伸杆沿着支撑体的外围边缘定位。 该方法包括提供具有狭缝阀和衬底支撑件的处理室，向布置在衬底支撑件上方的分配板提供RF功率，使气体流过分布板，等离子体处理设置在衬底支架上的衬底，并减少发电 的等离子体。