利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

93 条记录 (耗时 0.035 秒)

    Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality
    31.
    发明授权
    Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality 失效
    使用含有SiCOH基质官能团和有机致孔剂功能的单一双功能前体的超低k等离子体增强化学气相沉积方法

    公开(公告)号：US07491658B2

    公开(公告)日：2009-02-17

    申请号：US10964254

    申请日：2004-10-13

    申请人： Son Van Nguyen ,  Stephen McConnell Gates ,  Deborah A. Neumayer ,  Alfred Grill

    发明人： Son Van Nguyen ,  Stephen McConnell Gates ,  Deborah A. Neumayer ,  Alfred Grill

    IPC分类号： H01L21/31

    CPC分类号： C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/31695 ,  Y10T428/249921

    摘要： A method for fabricating a SiCOH dielectric material comprising Si, C, O and H atoms from a single organosilicon precursor with a built-in organic porogen is provided. The single organosilicon precursor with a built-in organic porogen is selected from silane (SiH4) derivatives having the molecular formula SiRR1R2R3, disiloxane derivatives having the molecular formula R4R5R6—Si—O—Si—R7R8R9, and trisiloxane derivatives having the molecular formula R10R11R12—Si—O—Si—R13R14—O—Si—R15R16R17 where R and R1-17 may or may not be identical and are selected from H, alkyl, alkoxy, epoxy, phenyl, vinyl, allyl, alkenyl or alkynyl groups that may be linear, branched, cyclic, polycyclic and may be functionalized with oxygen, nitrogen or fluorine containing substituents. In addition to the method, the present application also provides SiCOH dielectrics made from the inventive method as well as electronic structures that contain the same.

    摘要翻译： 提供了由具有内置有机致孔剂的单一有机硅前体制备包含Si，C，O和H原子的SiCOH电介质材料的方法。 具有内置有机致孔剂的单一有机硅前体选自具有分子式SiRR1R2R3的硅烷（SiH4）衍生物，具有分子式为R4R5R6-Si-O-Si-R7R8R9的二硅氧烷衍生物和分子式为R10R11R12- Si-O-Si-R13R14-O-Si-R15R16R17其中R和R1-17可以相同也可以不相同，并且可以选自H，烷基，烷氧基，环氧基，苯基，乙烯基，烯丙基，烯基或炔基， 直链，支链，环状，多环，并且可以被含氧，含氮或氟的取代基官能化。 除了该方法之外，本申请还提供了由本发明方法制备的SiCOH电介质以及含有该SiCOH的电子结构。

    Side wall passivation films for damascene cu/low k electronic devices
    37.
    发明授权
    Side wall passivation films for damascene cu/low k electronic devices 失效
    用于大马士革/低k电子设备的侧壁钝化膜

    公开(公告)号：US06878620B2

    公开(公告)日：2005-04-12

    申请号：US10293543

    申请日：2002-11-12

    申请人： Son Van Nguyen ,  Li-Qun Xia ,  Srinivas D. Nemani

    发明人： Son Van Nguyen ,  Li-Qun Xia ,  Srinivas D. Nemani

    IPC分类号： H01L21/768 ,  H01L21/4763

    CPC分类号： H01L21/76844 ,  H01L21/76829 ,  H01L21/76831

    摘要： Methods and apparatus for protecting the dielectric layer sidewalls of openings, such as vias and trenches, in semiconductor substrates are provided. A pre-liner and a liner are deposited over the sidewalls of the openings as part of integrated processing sequences that either do not remove the photoresist until subsequent processing or remove the photoresist with a plasma etch that does not contaminate the sidewalls of the openings.

    摘要翻译： 提供了用于保护半导体衬底中诸如通路和沟槽之类的开口的电介质层侧壁的方法和装置。 预先衬里和衬垫沉积在开口的侧壁上，作为集成处理顺序的一部分，其不会除去光致抗蚀剂，直到后续处理或用不污染开口侧壁的等离子体蚀刻去除光致抗蚀剂。

    Shrink-wrap collar for DRAM deep trenches
    38.
    发明授权
    Shrink-wrap collar for DRAM deep trenches 失效
    用于DRAM深沟的收缩环

    公开(公告)号：US06399976B1

    公开(公告)日：2002-06-04

    申请号：US08467353

    申请日：1995-06-06

    申请人： Peter John Geiss ,  Howard Smith Landis ,  Son Van Nguyen

    发明人： Peter John Geiss ,  Howard Smith Landis ,  Son Van Nguyen

    IPC分类号： H01L27108

    CPC分类号： H01L27/10861 ,  H01L29/66181

    摘要： Crystal lattice dislocations in material surrounding trench capacitors and other trench structures are avoided by alteration of stresses such as decreasing compressive stresses and/or development of persistent tensile forces within material deposited in the trench and thus at the material interface formed by the trench. Such alteration of stresses is achieved by volume reduction of a film deposited in the trench. The material is preferably a hydrogenated nitride of silicon, boron or silicon-carbon alloy which may be reduced in volume by partial or substantially complete dehydrogenation during subsequent heat treatment at temperatures where the film will exhibit substantial creep resistance. The amount of volume reduction can be closely controlled by control of concentration of hydrogen or other gas or volatile material in the film. Further fine adjustment of stresses can be achieved in combination with this mechanism by volume reduction of other materials which may be used, in part, to confine the film through other mechanisms such as annealing.

    摘要翻译： 在沟槽电容器和其他沟槽结构周围的材料中的晶格位错通过改变应力来避免，例如减小压缩应力和/或沉积在沟槽中的材料内部以及因此在由沟槽形成的材料界面处的持续张力的变化。 通过在沟槽中沉积的膜的体积减小来实现应力的这种改变。 该材料优选是硅，硼或硅 - 碳合金的氢化氮化物，其可以在随后的热处理期间通过部分或基本上完全脱氢体积减小，其中该膜将呈现显着的耐蠕变性。 可以通过控制膜中的氢或其它气体或挥发性物质的浓度来严格控制体积减少的量。 通过其它材料的体积减少，可以通过结合该机理来实现应力的进一步细微调节，其它材料可以部分地通过其它机制例如退火来限制膜。