公开(公告)号：US20100207052A1

公开(公告)日：2010-08-19

申请号：US12772850

申请日：2010-05-03

申请人： Katsumi Okayama ,  Kaoru Kobayashi ,  Koichiro Inomata ,  Sat shi Sugimoto ,  Yoshihiro Kato

发明人： Katsumi Okayama ,  Kaoru Kobayashi ,  Koichiro Inomata ,  Sat shi Sugimoto ,  Yoshihiro Kato

IPC分类号： H01F1/42

CPC分类号： B82Y30/00 ,  B22F1/0018 ,  B22F1/0059 ,  B22F9/24 ,  B22F9/305 ,  B22F2998/00 ,  B82Y25/00 ,  B82Y40/00 ,  C22C32/0094 ,  H01F1/0054 ,  H01F41/30 ,  H01F41/301 ,  Y10S977/777 ,  Y10S977/783 ,  Y10T428/12146 ,  Y10T428/254 ,  Y10T428/256 ,  Y10T428/257 ,  Y10T428/29 ,  Y10T428/2991 ,  Y10T428/2998 ,  B22F3/02

摘要： A method for producing a magnetic particle forming a magnetic material for absorbing electromagnetic waves comprises the steps of mixing an organometallic complex or a metal salt with a chain polymer and dissolving the mixture in a solvent (step S1); raising the temperature of the mixture to reaction temperature (step S2), carrying out a reaction at the reaction temperature (step S3); and forming the magnetic particle having a structure that the periphery of each fine particle formed from the organometallic complex or the metal salt is surrounded by the chain polymer and recovering the formed magnetic particle after the reaction (step S4). The magnetic particle has a nanogranular structure to become a magnetic material for absorbing electromagnetic waves. Such a magnetic particle is produced by a wet reaction. Thus, a larger amount of magnetic particle can be produced by one reaction.

摘要翻译： 一种形成用于吸收电磁波的磁性材料的磁性颗粒的制造方法包括将有机金属络合物或金属盐与链状聚合物混合并将该混合物溶解在溶剂中的步骤（步骤S1）。 将混合物的温度升至反应温度（步骤S2），在反应温度下进行反应（步骤S3）; 并形成具有由有机金属配合物或金属盐形成的各微细颗粒的周围被链状聚合物包围并在反应后回收所形成的磁性颗粒的结构的磁性颗粒（步骤S4）。 磁性颗粒具有纳米结构，成为吸收电磁波的磁性材料。 这样的磁性颗粒是通过湿反应产生的。 因此，通过一次反应可以产生更大量的磁性颗粒。

公开(公告)号：US07593193B2

公开(公告)日：2009-09-22

申请号：US11847496

申请日：2007-08-30

申请人： Koichiro Inomata ,  Kentaro Nakajima ,  Yoshiaki Saito ,  Masayuki Sagoi ,  Tatsuya Kishi

发明人： Koichiro Inomata ,  Kentaro Nakajima ,  Yoshiaki Saito ,  Masayuki Sagoi ,  Tatsuya Kishi

IPC分类号： G11B5/39 ,  G11C11/14 ,  G11C11/15

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3281 ,  H01L27/224 ,  H01L43/08 ,  Y10T428/1121 ,  Y10T428/115

摘要： A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.

摘要翻译： 磁阻元件具有铁磁双隧道结，其具有第一反铁磁层/第一铁磁层/第一介电层/第二铁磁层/第二电介质层/第三铁磁层/第二反铁磁层的堆叠结构。 作为自由层的第二铁磁层由Co基合金或Co系合金/ Ni-Fe合金/ Co系合金的三层膜构成。 隧道电流在第一铁磁层和第三铁磁层之间流动。

公开(公告)号：US07038894B2

公开(公告)日：2006-05-02

申请号：US11110869

申请日：2005-04-21

申请人： Koichiro Inomata ,  Kentaro Nakajima ,  Yoshiaki Saito ,  Masayuki Sagoi ,  Tatsuya Kishi

发明人： Koichiro Inomata ,  Kentaro Nakajima ,  Yoshiaki Saito ,  Masayuki Sagoi ,  Tatsuya Kishi

IPC分类号： G11B5/127 ,  G11B5/33 ,  H01L43/08 ,  G11C11/14

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3281 ,  H01L27/224 ,  H01L43/08 ,  Y10T428/1121 ,  Y10T428/115

摘要： A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.

公开(公告)号：US06707711B2

公开(公告)日：2004-03-16

申请号：US10357217

申请日：2003-02-04

申请人： Yoshiaki Saito ,  Koichiro Inomata ,  Minoru Amano ,  Kentaro Nakajima ,  Masayuki Sagoi ,  Tatsuya Kishi ,  Shigeki Takahashi

发明人： Yoshiaki Saito ,  Koichiro Inomata ,  Minoru Amano ,  Kentaro Nakajima ,  Masayuki Sagoi ,  Tatsuya Kishi ,  Shigeki Takahashi

IPC分类号： G11C1100

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  H01F10/3231 ,  H01L27/224 ,  H01L27/228

摘要： There is provided a magnetic memory including first and second wirings intersecting each other and disposed apart from each other, a magnetoresistance effect film positioned between the first and second wirings, and a first magnetic film including a first portion facing the magnetoresistance effect film with the first wiring interposed therebetween and a pair of second portions positioned on both sides of the first wiring and magnetically connected to the first portion, each of the first and second portions having either one of a high saturation magnetization soft magnetic material containing cobalt and a metal-nonmetal nano-granular film.

摘要翻译： 提供了一种磁存储器，包括彼此相交并彼此分开布置的第一和第二布线，位于第一和第二布线之间的磁阻效应膜，以及第一磁性膜，其包括面向磁阻效应膜的第一部分，其具有第一 插入其间的布线和位于第一布线的两侧并与第一部分磁连接的一对第二部分，第一和第二部分中的每一个具有包含钴的高饱和磁化软磁材料和金属非金属 纳米颗粒膜。

公开(公告)号：US06670546B2

公开(公告)日：2003-12-30

申请号：US10181384

申请日：2002-07-17

申请人： Katsumi Okayama ,  Junichi Toyoda ,  Yoshihiro Kato ,  Satoshi Sugimoto ,  Koichiro Inomata

发明人： Katsumi Okayama ,  Junichi Toyoda ,  Yoshihiro Kato ,  Satoshi Sugimoto ,  Koichiro Inomata

IPC分类号： H05K900

CPC分类号： H05K9/0088 ,  H01Q17/00

摘要： There is disclosed a thinner-layered radio wave absorber having high absorption performance for a high frequency electromagnetic wave. The radio wave absorber, even when having a magnetic layer of not more than 1 mm in thickness, achieves satisfactory absorption characteristics for the high frequency electromagnetic wave by adopting a structure that a conductor is fixedly attached to a face opposite to an electromagnetic-wave incident face of the magnetic layer of single-layered structure, and also arranging the magnetic layer to have values of a real part &mgr;′ and an imaginary part &mgr;″ of complex relative magnetic permeability of the magnetic layer satisfying an expression of &mgr;″≧m&mgr;′−n (m: real number of m>0, n: real number of n≧0) outside an impedance mismatching region.

摘要翻译： 公开了一种对于高频电磁波具有高吸收性能的较薄层的电波吸收体。 无线电波吸收体即使在具有1mm以下的磁性层的情况下，通过采用将导体固定地安装在与电磁波入射面相反的面的结构来实现高频电磁波的令人满意的吸收特性 并且还将磁性层布置成具有满足表达式“μ”的磁性层的复数相对磁导率的实部μ'和虚部μ“的值， = mmu'-n（m：实数m> 0，n：实数n> = 0）在阻抗失配区域之外。

公开(公告)号：US06611405B1

公开(公告)日：2003-08-26

申请号：US09662117

申请日：2000-09-14

申请人： Koichiro Inomata ,  Kentaro Nakajima ,  Yoshiaki Saito ,  Masayuki Sagoi ,  Tatsuya Kishi

发明人： Koichiro Inomata ,  Kentaro Nakajima ,  Yoshiaki Saito ,  Masayuki Sagoi ,  Tatsuya Kishi

IPC分类号： G11C1114

CPC分类号： H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3281 ,  H01L27/224 ,  H01L43/08 ,  Y10T428/1121 ,  Y10T428/115

摘要： A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.

公开(公告)号：US5723978A

公开(公告)日：1998-03-03

申请号：US392523

申请日：1995-02-23

申请人： Koichiro Inomata ,  Roger Highmore ,  Keiichiro Yusu ,  Yoshinori Takahashi

发明人： Koichiro Inomata ,  Roger Highmore ,  Keiichiro Yusu ,  Yoshinori Takahashi

IPC分类号： G01J1/42 ,  G01R33/00 ,  G01R33/038 ,  G01R33/12 ,  G03G5/16 ,  G11B5/00 ,  G11B5/33 ,  G11B11/00 ,  G11B11/105 ,  G11B13/04 ,  H01F7/04 ,  H01F10/00 ,  H01F10/32 ,  H01L43/08

CPC分类号： G01Q60/50 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y25/00 ,  B82Y35/00 ,  G01J1/42 ,  G01R33/0385 ,  G03G5/16 ,  G11B11/007 ,  G11B11/10502 ,  G11B11/10584 ,  G11B11/10586 ,  G11B5/00 ,  G11B5/332 ,  H01F10/3254

摘要： A magnetic device, comprises a first magnetic layer; a second magnetic layer on the magnetic layer and having a coercive force smaller than that of the first magnetic layer; a semiconductor layer between the first and second magnetic layers so that photo-induced magnetism occurs between the first and second magnetic layers when the semiconductor layer is irradiated with light, a third magnetic layer on the second magnetic layer, the third magnetic layer having a coercive force larger than the coercive force of the second magnetic layer, and a second semiconductor layer between the second and third magnetic layers, magnetism being induced between the second and third magnetic layers when the second semiconductor layer is irradiated with light.

摘要翻译： 一种磁性装置，包括第一磁性层; 磁性层上的第二磁性层，其矫顽力小于第一磁性层的矫顽力; 在第一和第二磁性层之间的半导体层，使得当半导体层被照射时在第一和第二磁性层之间发生光致磁化，第二磁性层上的第三磁性层，具有矫顽力的第三磁性层 强度大于第二磁性层的矫顽力，第二和第三磁性层之间的第二半导体层，当第二半导体层被照射时，在第二和第三磁性层之间感应磁性。

公开(公告)号：US5716719A

公开(公告)日：1998-02-10

申请号：US190571

申请日：1994-02-02

申请人： Yoshiaki Saito ,  Koichiro Inomata ,  Susumu Hashimoto

发明人： Yoshiaki Saito ,  Koichiro Inomata ,  Susumu Hashimoto

IPC分类号： G01D5/12 ,  G01R33/09 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  H01F1/00 ,  B32B15/00

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  H01F10/3218 ,  H01L43/10 ,  Y10S428/928 ,  Y10T428/12465 ,  Y10T428/12583 ,  Y10T428/12611 ,  Y10T428/12889 ,  Y10T428/12896 ,  Y10T428/12903 ,  Y10T428/1291 ,  Y10T428/12917 ,  Y10T428/12944 ,  Y10T428/12951

摘要： A multilayer comprising magnetic layers and nonmagnetic layers, which are stacked in a manner to produce a magnetoresistance effect, is formed on a main surface of a substrate having at least the surface portion formed of a single crystal of cubic system. The (110) plane of said single crystal constituting the main surface of the substrate. The magnetic layers are distorted such that a uniaxial easy axis of magnetization is formed within a plane.

摘要翻译： 在至少具有由立方体单晶形成的表面部分的基板的主表面上形成包括以产生磁阻效应的方式层叠的磁性层和非磁性层的多层。 构成基板主表面的单晶的（110）面。 磁性层变形，从而在平面内形成单轴易磁化轴。

公开(公告)号：US5607781A

公开(公告)日：1997-03-04

申请号：US329514

申请日：1994-05-26

申请人： Shiho Okuno ,  Susumu Hashimoto ,  Koichiro Inomata

发明人： Shiho Okuno ,  Susumu Hashimoto ,  Koichiro Inomata

IPC分类号： C23C14/58 ,  C23C14/08 ,  C23C14/22 ,  C23C14/46 ,  C30B23/02 ,  G11B11/10 ,  G11B11/105 ,  H01F10/20 ,  H01F41/18 ,  G11B5/66 ,  C23C14/00 ,  B05D5/12

CPC分类号： C23C14/08 ,  C23C14/221 ,  C23C14/46 ,  C30B23/02 ,  C30B29/16 ,  Y10S428/90

摘要： An oxide film having, for example, a spinel structure is deposited on a substrate, and ions of an inert gas such as He, Ar, Ne, Kr, or Xe, oxygen gas ions, or metal ion of a film constituting element are radiated onto the film during deposition, thereby to obtain an oxide thin film in which a specific crystal direction is oriented.

摘要翻译： 将具有例如尖晶石结构的氧化物膜沉积在基板上，并且照射成膜组成元素的诸如He，Ar，Ne，Kr或Xe的惰性气体，氧气离子或金属离子的离子 在沉积期间在膜上，从而获得其中特定晶体方向取向的氧化物薄膜。

公开(公告)号：US5523172A

公开(公告)日：1996-06-04

申请号：US234863

申请日：1994-04-28

申请人： Yoshiaki Saito ,  Shiho Okuno ,  Koichiro Inomata

发明人： Yoshiaki Saito ,  Shiho Okuno ,  Koichiro Inomata

IPC分类号： G01R33/09 ,  H01L43/10 ,  G11B5/00

CPC分类号： B82Y25/00 ,  G01R33/093 ,  H01L43/10 ,  Y10S428/928 ,  Y10T428/12465 ,  Y10T428/12632 ,  Y10T428/12875 ,  Y10T428/12896 ,  Y10T428/1291

摘要： A magnetoresistance effect element comprises the multilayer formed by alternately stacking magnetic and nonmagnetic layers. The magnetic layers containing at least two magnetic elements selected from a group of magnetic elements consisting of Fe, Co and Ni. Any two magnetic layers adjacent to each other with one of the nonmagnetic layer interposed therebetween are antiferromagnetically coupled under a condition where a magnetic field is not substantially applied thereto.

摘要翻译： 磁阻效应元件包括通过交替堆叠磁性和非磁性层形成的多层。 磁性层含有至少两个选自由Fe，Co和Ni组成的一组磁性元素的磁性元素。 任何两个彼此相邻的磁性层，其中一个非磁性层插入其间，在基本不施加磁场的条件下进行反铁磁耦合。