摘要:
A multilayer comprising magnetic layers and nonmagnetic layers, which are stacked in a manner to produce a magnetoresistance effect, is formed on a main surface of a substrate having at least the surface portion formed of a single crystal of cubic system. The (110) plane of said single crystal constituting the main surface of the substrate. The magnetic layers are distorted such that a uniaxial easy axis of magnetization is formed within a plane.
摘要:
A magnetoresistance effect element includes a multilayer obtained by stacking magnetic and nonmagnetic layers to exhibit a magnetoresistance effect, and an reversal assist layer formed on the multilayer to assist reversal of a magnetic moment of the magnetic layer.
摘要:
Disclosed is an artificial multilayer in which ferromagnetic layers and nonmagnetic layers are alternatively laminated, wherein a uniaxial magnetic anisotropy is introduced into the ferromagnetic layers in a predetermined direction, thereby controlling the gradient of the relative change of resistivity to the change of external magnetic field. The uniaxial magnetic anisotropy is introduced into the ferromagnetic layers by applying a magnetic field along the surface of ferromagnetic layers during the formation thereof.
摘要:
An oxide film having, for example, a spinel structure is deposited on a substrate, and ions of an inert gas such as He, Ar, Ne, Kr, or Xe, oxygen gas ions, or metal ion of a film constituting element are radiated onto the film during deposition, thereby to obtain an oxide thin film in which a specific crystal direction is oriented.
摘要:
To obtain a high permeability magnetic core, the core is made of a 5 to 25 .mu.m thick ribbon of a Co-based amorphous alloy with a Curie temperature Tc between 120.degree. C. and 270.degree. C., and further heat treated at a temperature below Tc within a magnetic field (1 Oe or more) applied in the lateral direction of the thin ribbon. Further, the saturation magnetostriction constant of the ribbon should be -2 to 1.times.10.sup.-6.
摘要:
Disclosed is an artificial multilayer in which ferromagnetic layers and nonmagnetic layers are alternatively laminated, wherein a uniaxial magnetic anisotropy is introduced into the ferromagnetic layers in a predetermined direction, thereby controlling the gradient of the relative change of resistivity to the change of external magnetic field. The uniaxial magnetic anisotropy is introduced into the ferromagnetic layers by applying a magnetic field along the surface of ferromagnetic layers during the formation thereof.
摘要:
An amorphous oxide magnetic material is represented by a formula (1-y) [Ln.sub.1-x A.sub.x MnO.sub.3-.delta. ].multidot.y[XO] wherein x and y fall within the ranges of 0.1.ltoreq.x.ltoreq.1.0 and y.ltoreq.0.7, respectively. Ln represents at least one element selected from the group consisting of Ln and a rare earth element. A represents at least one element selected from the group consisting of Ca, Sr, Ba and Pb, X represents at least one element selected from the group consisting of B, Bi, Si, Mg, Mo, V, Zn, P and Ge, and .delta. represents oxygen deficiency and .delta..ltoreq.1.
摘要:
A discrete energy levels are introduced in a ferromagnetic layer of a magnetic device, and tunnel current flows through a plurality of tunnel junctions. The tunnel junctions are disposed between first and second electrodes and the first ferromagnetic layer is interposed between the two tunnel junctions. Variations of the tunnel current depend on the relationship between magnetization directions of the ferromagnetic layer and another ferromagnetic layer. Tunnel current varies between parallel relation and anti-parallel relation.
摘要:
A magnetoresistance effect element comprises the multilayer formed by alternately stacking magnetic and nonmagnetic layers. The magnetic layers containing three magnetic elements of Fe, Co and Ni. Any two magnetic layers adjacent to each other with one of the nonmagnetic layer interposed therebetween are antiferromagnetically coupled under a condition where a magnetic field is not substantially applied thereto.
摘要:
A magnetoresistance effect element comprises the multilayer formed by alternately stacking magnetic and nonmagnetic layers. The magnetic layers containing at least two magnetic elements selected from a group of magnetic elements consisting of Fe, Co and Ni. Any two magnetic layers adjacent to each other with one of the nonmagnetic layer interposed therebetween are antiferro-magnetically coupled under a condition where a magnetic field is not substantially applied thereto.